Computer memory and data storage types |
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Volatile |
Non-volatile |
Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing software that is rarely changed during the life of the system, also known as firmware. Software applications, such as video games, for programmable devices can be distributed as plug-in cartridges containing ROM.
Strictly speaking, read-only memory refers to hard-wired memory, such as diode matrix or a mask ROM integrated circuit (IC), that cannot be electronically changed after manufacture. Although discrete circuits can be altered in principle, through the addition of bodge wires and the removal or replacement of components, ICs cannot. Correction of errors, or updates to the software, require new devices to be manufactured and to replace the installed device.
Floating-gate ROM semiconductor memory in the form of erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM) and flash memory can be erased and re-programmed. But usually, this can only be done at relatively slow speeds, may require special equipment to achieve, and is typically only possible a certain number of times. [1]
The term "ROM" is sometimes used to refer to a ROM device containing specific software or a file with software to be stored in a writable ROM device. For example, users modifying or replacing the Android operating system describe files containing a modified or replacement operating system as "custom ROMs" after the type of storage the file used to be written to, and they may distinguish between ROM (where software and data is stored, usually Flash memory) and RAM.
ROM and RAM are essential components of a computer, each serving distinct roles. RAM, or Random Access Memory, is a temporary, volatile storage medium that loses data when the system powers down. In contrast, ROM, being non-volatile, preserves its data even after the computer is switched off. [2]
IBM used capacitor read-only storage (CROS) and transformer read-only storage (TROS) to store microcode for the smaller System/360 models, the 360/85, and the initial two System/370 models (370/155 and 370/165). On some models there was also a writeable control store (WCS) for additional diagnostics and emulation support. The Apollo Guidance Computer used core rope memory, programmed by threading wires through magnetic cores.
The simplest type of solid-state ROM is as old as the semiconductor technology itself. Combinational logic gates can be joined manually to map n-bit address input onto arbitrary values of m-bit data output (a look-up table). With the invention of the integrated circuit came mask ROM. Mask ROM consists of a grid of word lines (the address input) and bit lines (the data output), selectively joined with transistor switches, and can represent an arbitrary look-up table with a regular physical layout and predictable propagation delay. Mask ROM is programmed with photomasks in photolithography during semiconductor manufacturing. The mask defines physical features or structures that will be removed, or added in the ROM chips, and the presence or absence of these features will represent either a 1 or a 0 bit, depending on the ROM design. [3] Thus by design, any attempts to electronically change the data will fail, since the data is defined by the presence or absence of physical features or structures that cannot be electronically changed. For every software program, even for revisions of the same program, the entire mask must be changed, which can be costly.
In mask ROM, the data is physically encoded in the circuit, so it can only be programmed during fabrication. This leads to a number of serious disadvantages:
Subsequent developments have addressed these shortcomings. Programmable read-only memory (PROM), invented by Wen Tsing Chow in 1956, [5] [6] allowed users to program its contents exactly once by physically altering its structure with the application of high-voltage pulses. This addressed problems 1 and 2 above, since a company can simply order a large batch of fresh PROM chips and program them with the desired contents at its designers' convenience.
The advent of the metal–oxide–semiconductor field-effect transistor (MOSFET), invented at Bell Labs in 1959, [7] enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements in semiconductor memory, a function previously served by magnetic cores in computer memory. [8] In 1967, Dawon Kahng and Simon Sze of Bell Labs proposed that the floating gate of a MOS semiconductor device could be used for the cell of a reprogrammable ROM, which led to Dov Frohman of Intel inventing erasable programmable read-only memory (EPROM) in 1971. [9] [10] The 1971 invention of EPROM essentially solved problem 3, since EPROM (unlike PROM) can be repeatedly reset to its unprogrammed state by exposure to strong ultraviolet light.
Electrically erasable programmable read-only memory (EEPROM), developed by Yasuo Tarui, Yutaka Hayashi and Kiyoko Naga at the Electrotechnical Laboratory in 1972, [11] went a long way to solving problem 4, since an EEPROM can be programmed in-place if the containing device provides a means to receive the program contents from an external source (for example, a personal computer via a serial cable). Flash memory, invented by Fujio Masuoka at Toshiba in the early 1980s and commercialized in the late 1980s, is a form of EEPROM that makes very efficient use of chip area and can be erased and reprogrammed thousands of times without damage. It permits erasure and programming of only a specific part of the device, instead of the entire device. This can be done at high speed, hence the name "flash". [12] [13]
All of these technologies improved the flexibility of ROM, but at a significant cost-per-chip, so that in large quantities mask ROM would remain an economical choice for many years. (Decreasing cost of reprogrammable devices had almost eliminated the market for mask ROM by the year 2000.) Rewriteable technologies were envisioned as replacements for mask ROM.
The most recent development is NAND flash, also invented at Toshiba. Its designers explicitly broke from past practice, stating plainly that "the aim of NAND flash is to replace hard disks," [14] rather than the traditional use of ROM as a form of non-volatile primary storage. As of 2021 [update] , NAND has nearly completely achieved this goal by offering throughput higher than hard disks, lower latency, higher tolerance of physical shock, extreme miniaturization (in the form of USB flash drives and tiny microSD memory cards, for example), and much lower power consumption.
Many stored-program computers use a form of non-volatile storage (that is, storage that retains its data when power is removed) to store the initial program that runs when the computer is powered on or otherwise begins execution (a process known [a] as bootstrapping, often abbreviated to "booting" or "booting up"). Likewise, every non-trivial computer needs some form of mutable memory to record changes in its state as it executes.
Forms of read-only memory were employed as non-volatile storage for programs in most early stored-program computers, such as ENIAC after 1948. (Until then it was not a stored-program computer as every program had to be manually wired into the machine, which could take days to weeks.) Read-only memory was simpler to implement since it needed only a mechanism to read stored values, and not to change them in-place, and thus could be implemented with very crude electromechanical devices (see historical examples below). With the advent of integrated circuits in the 1960s, both ROM and its mutable counterpart static RAM were implemented as arrays of transistors in silicon chips; however, a ROM memory cell could be implemented using fewer transistors than an SRAM memory cell, since the latter needs a latch (comprising 5-20 transistors) to retain its contents, while a ROM cell might consist of the absence (logical 0) or presence (logical 1) of one transistor connecting a bit line to a word line. [15] Consequently, ROM could be implemented at a lower cost-per-bit than RAM for many years.
Most home computers of the 1980s stored a BASIC interpreter or operating system in ROM as other forms of non-volatile storage such as magnetic disk drives were too costly. For example, the Commodore 64 included 64 KB of RAM and 20 KB of ROM containing a BASIC interpreter and the KERNAL operating system. Later home or office computers such as the IBM PC XT often included magnetic disk drives, and larger amounts of RAM, allowing them to load their operating systems from disk into RAM, with only a minimal hardware initialization core and bootloader remaining in ROM (known as the BIOS in IBM-compatible computers). This arrangement allowed for a more complex and easily upgradeable operating system.
In modern PCs, "ROM" is used to store the basic bootstrapping firmware for the processor, as well as the various firmware needed to internally control self-contained devices such as graphic cards, hard disk drives, solid-state drives, optical disc drives, TFT screens, etc., in the system. Today, many of these "read-only" memories – especially the BIOS/UEFI – are often replaced with EEPROM or Flash memory (see below), to permit in-place reprogramming should the need for a firmware upgrade arise. However, simple and mature sub-systems (such as the keyboard or some communication controllers in the integrated circuits on the main board, for example) may employ mask ROM or OTP (one-time programmable).
ROM and successor technologies such as flash are prevalent in embedded systems. These are in everything from industrial robots to home appliances and consumer electronics (MP3 players, set-top boxes, etc.) all of which are designed for specific functions, but are based on general-purpose microprocessors. With software usually tightly coupled to hardware, program changes are rarely needed in such devices (which typically lack hard disks for reasons of cost, size, or power consumption). As of 2008, most products use Flash rather than mask ROM, and many provide some means for connecting to a PC for firmware updates; for example, a digital audio player might be updated to support a new file format. Some hobbyists have taken advantage of this flexibility to reprogram consumer products for new purposes; for example, the iPodLinux and OpenWrt projects have enabled users to run full-featured Linux distributions on their MP3 players and wireless routers, respectively.
ROM is also useful for binary storage of cryptographic data, as it makes them difficult to replace, which may be desirable in order to enhance information security.
Since ROM (at least in hard-wired mask form) cannot be modified, it is only suitable for storing data which is not expected to need modification for the life of the device. To that end, ROM has been used in many computers to store look-up tables for the evaluation of mathematical and logical functions (for example, a floating-point unit might tabulate the sine function in order to facilitate faster computation). This was especially effective when CPUs were slow and ROM was cheap compared to RAM.
Notably, the display adapters of early personal computers stored tables of bitmapped font characters in ROM. This usually meant that the text display font could not be changed interactively. This was the case for both the CGA and MDA adapters available with the IBM PC XT.
The use of ROM to store such small amounts of data has disappeared almost completely in modern general-purpose computers. However, NAND Flash has taken over a new role as a medium for mass storage or secondary storage of files.
Mask ROM is a read-only memory whose contents are programmed by the integrated circuit manufacturer (rather than by the user). The desired memory contents are furnished by the customer to the device manufacturer. The desired data is converted into a custom photomask/mask layer for the final metallization of interconnections on the memory chip (hence the name).
Mask ROM can be made in several ways, all of which aim to change the electrical response of a transistor when it is addressed on a grid, such as:
Mask ROM transistors can be arranged in either NOR or NAND configurations and can achieve one of the smallest cell sizes possible as each bit is represented by only one transistor. NAND offers higher storage density than NOR. OR configurations are also possible, but compared to NOR it only connects transistors to Vcc instead of Vss. [16] Mask ROMs used to be the most inexpensive, and are the simplest semiconductor memory devices, with only one metal layer and one polysilicon layer, making it the type of semiconductor memory with the highest manufacturing yield [3] (the highest number of working devices per manufacturing run). ROM can be made using one of several semiconductor device fabrication technologies such as CMOS, nMOS, pMOS, and bipolar transistors. [17]
It is common practice to use rewritable non-volatile memory – such as UV-EPROM or EEPROM – for the development phase of a project, and to switch to mask ROM when the code has been finalized. For example, Atmel microcontrollers come in both EEPROM and mask ROM formats.
The main advantage of mask ROM is its cost. Per bit, mask ROM was more compact than any other kind of semiconductor memory. Since the cost of an integrated circuit strongly depends on its size, mask ROM is significantly cheaper than any other kind of semiconductor memory.
However, the one-time masking cost is high and there is a long turn-around time from design to product phase. Design errors are costly: if an error in the data or code is found, the mask ROM is useless and must be replaced in order to change the code or data. [18]
As of 2003 [update] , four companies produce most such mask ROM chips: Samsung Electronics, NEC Corporation, Oki Electric Industry, and Macronix. [19] [ needs update ]
Some integrated circuits contain only mask ROM. Other integrated circuits contain mask ROM as well as a variety of other devices. In particular, many microprocessors have mask ROM to store their microcode. Some microcontrollers have mask ROM to store the bootloader or all of their firmware.
Classic mask-programmed ROM chips are integrated circuits that physically encode the data to be stored, and thus it is impossible to change their contents after fabrication.
It is also possible to write the contents of a Laser ROM by using a laser to alter the electrical properties of only some diodes on the ROM, or by using a laser to cut only some polysilicon links, instead of using a mask. [20] [21] [16]
By applying write protection, some types of reprogrammable ROMs may temporarily become read-only memory.
There are other types of non-volatile memory which are not based on solid-state IC technology, including:
Although the relative speed of RAM vs. ROM has varied over time, as of 2007 [update] large RAM chips can be read faster than most ROMs. For this reason (and to allow uniform access), ROM content is sometimes copied to RAM or shadowed before its first use, and subsequently read from RAM.
For those types of ROM that can be electrically modified, writing speed has traditionally been much slower than reading speed, and it may need unusually high voltage, the movement of jumper plugs to apply write-enable signals, and special lock/unlock command codes. Modern NAND Flash can be used to achieve the highest write speeds of any rewritable ROM technology, with speeds as high as 10 GB/s in an SSD. This has been enabled by the increased investment in both consumer and enterprise solid-state drives and flash memory products for higher end mobile devices. On a technical level the gains have been achieved by increasing parallelism both in controller design and of storage, the use of large DRAM read/write caches and the implementation of memory cells which can store more than one bit (DLC, TLC and MLC). The latter approach is more failure prone but this has been largely mitigated by overprovisioning (the inclusion of spare capacity in a product which is visible only to the drive controller) and by increasingly sophisticated read/write algorithms in drive firmware.
Because they are written by forcing electrons through a layer of electrical insulation onto a floating transistor gate, rewriteable ROMs can withstand only a limited number of write and erase cycles before the insulation is permanently damaged. In the earliest EPROMs, this might occur after as few as 1,000 write cycles, while in modern Flash EEPROM the endurance may exceed 1,000,000. The limited endurance, as well as the higher cost per bit, means that Flash-based storage is unlikely to completely supplant magnetic disk drives in the near future.[ citation needed ]
The timespan over which a ROM remains accurately readable is not limited by write cycling. The data retention of EPROM, EAROM, EEPROM, and Flash may be time-limited by charge leaking from the floating gates of the memory cell transistors. Early generation EEPROM's, in the mid-1980s generally cited 5 or 6 year data retention. A review of EEPROM's offered in the year 2020 shows manufacturers citing 100 year data retention. Adverse environments will reduce the retention time (leakage is accelerated by high temperatures or radiation). Masked ROM and fuse/antifuse PROM do not suffer from this effect, as their data retention depends on physical rather than electrical permanence of the integrated circuit, although fuse re-growth was once a problem in some systems. [29]
The contents of ROM chips can be extracted with special hardware devices and relevant controlling software. This practice is common for, as a main example, reading the contents of older video game console cartridges. Another example is making backups of firmware/OS ROMs from older computers or other devices - for archival purposes, as in many cases, the original chips are PROMs and thus at risk of exceeding their usable data lifetime.
The resultant memory dump files are known as ROM images or abbreviated ROMs, and can be used to produce duplicate ROMs - for example to produce new cartridges or as digital files for playing in console emulators. The term ROM image originated when most console games were distributed on cartridges containing ROM chips, but achieved such widespread usage that it is still applied to images of newer games distributed on CD-ROMs or other optical media.
ROM images of commercial games, firmware, etc. usually contain copyrighted software. The unauthorized copying and distribution of copyrighted software is a violation of copyright laws in many jurisdictions, although duplication for backup purposes may be considered fair use depending on location. In any case, there is a thriving community engaged in the distribution and trading of such software for preservation/sharing purposes.
Date of introduction | Chip name | Capacity (bits) | ROM type | MOSFET | Manufacturer(s) | Process | Area | Ref |
---|---|---|---|---|---|---|---|---|
1956 | ? | ? | PROM | ? | Arma | ? | ? | [5] [6] |
1965 | ? | 256 bit | ROM | Bipolar TTL | Sylvania | ? | ? | [30] |
1965 | ? | 1 kb | ROM | MOS | General Microelectronics | ? | ? | |
1969 | 3301 | 1 kb | ROM | Bipolar | Intel | ? | ? | [30] |
1970 | ? | 512 bit | PROM | Bipolar TTL | Radiation | ? | ? | [10] |
1971 | 1702 | 2 kb | EPROM | Static MOS (silicon gate) | Intel | ? | 15 mm² | [10] [31] |
1974 | ? | 4 kb | ROM | MOS | AMD, General Instrument | ? | ? | [30] |
1974 | ? | ? | EAROM | MNOS | General Instrument | ? | ? | [10] |
1975 | 2708 | 8 kb | EPROM | NMOS (FGMOS) | Intel | ? | ? | [32] [33] |
1976 | ? | 2 kb | EEPROM | MOS | Toshiba | ? | ? | [34] |
1977 | μCOM-43 (PMOS) | 16 kb | PROM | PMOS | NEC | ? | ? | [35] |
1977 | 2716 | 16 kb | EPROM | TTL | Intel | ? | ? | [36] [37] |
1978 | EA8316F | 16 kb | ROM | NMOS | Electronic Arrays | ? | 436 mm² | [30] [38] |
1978 | μCOM-43 (CMOS) | 16 kb | PROM | CMOS | NEC | ? | ? | [35] |
1978 | 2732 | 32 kb | EPROM | NMOS (HMOS) | Intel | ? | ? | [32] [39] |
1978 | 2364 | 64 kb | ROM | NMOS | Intel | ? | ? | [40] |
1980 | ? | 16 kb | EEPROM | NMOS | Motorola | 4,000 nm | ? | [32] [41] |
1981 | 2764 | 64 kb | EPROM | NMOS (HMOS II) | Intel | 3,500 nm | ? | [32] [41] [42] |
1982 | ? | 32 kb | EEPROM | MOS | Motorola | ? | ? | [41] |
1982 | 27128 | 128 kb | EPROM | NMOS (HMOS II) | Intel | ? | ? | [32] [41] [43] |
1983 | ? | 64 kb | EPROM | CMOS | Signetics | 3,000 nm | ? | [41] |
1983 | 27256 | 256 kb | EPROM | NMOS (HMOS) | Intel | ? | ? | [32] [44] |
1983 | ? | 256 kb | EPROM | CMOS | Fujitsu | ? | ? | [45] |
January 1984 | MBM 2764 | 64 kb | EEPROM | NMOS | Fujitsu | ? | 528 mm² | [46] |
1984 | ? | 512 kb | EPROM | NMOS | AMD | 1,700 nm | ? | [41] |
1984 | 27512 | 512 kb | EPROM | NMOS (HMOS) | Intel | ? | ? | [32] [47] |
1984 | ? | 1 Mb | EPROM | CMOS | NEC | 1,200 nm | ? | [41] |
1987 | ? | 4 Mb | EPROM | CMOS | Toshiba | 800 nm | ? | [41] |
1990 | ? | 16 Mb | EPROM | CMOS | NEC | 600 nm | ? | [41] |
1993 | ? | 8 Mb | MROM | CMOS | Hyundai | ? | ? | [48] |
1995 | ? | 1 Mb | EEPROM | CMOS | Hitachi | ? | ? | [49] |
1995 | ? | 16 Mb | MROM | CMOS | AKM, Hitachi | ? | ? | [49] |
Computer memory stores information, such as data and programs, for immediate use in the computer. The term memory is often synonymous with the terms RAM,main memory, or primary storage. Archaic synonyms for main memory include core and store.
A microcontroller or microcontroller unit (MCU) is a small computer on a single integrated circuit. A microcontroller contains one or more CPUs along with memory and programmable input/output peripherals. Program memory in the form of NOR flash, OTP ROM, or ferroelectric RAM is also often included on the chip, as well as a small amount of RAM. Microcontrollers are designed for embedded applications, in contrast to the microprocessors used in personal computers or other general-purpose applications consisting of various discrete chips.
A programmable read-only memory (PROM) is a form of digital memory where the contents can be changed once after manufacture of the device. The data is then permanent and cannot be changed. It is one type of read-only memory (ROM). PROMs are used in digital electronic devices to store permanent data, usually low level programs such as firmware or microcode. The key difference from a standard ROM is that the data is written into a ROM during manufacture, while with a PROM the data is programmed into them after manufacture. Thus, ROMs tend to be used only for large production runs with well-verified data. PROMs may be used where the volume required does not make a factory-programmed ROM economical, or during development of a system that may ultimately be converted to ROMs in a mass produced version.
Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating-gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.
EEPROM or E2PROM (electrically erasable programmable read-only memory) is a type of non-volatile memory. It is used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or as a separate chip device, to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed.
A programmable logic device (PLD) is an electronic component used to build reconfigurable digital circuits. Unlike digital logic constructed using discrete logic gates with fixed functions, the function of a PLD is undefined at the time of manufacture. Before the PLD can be used in a circuit it must be programmed to implement the desired function. Compared to fixed logic devices, programmable logic devices simplify the design of complex logic and may offer superior performance. Unlike for microprocessors, programming a PLD changes the connections made between the gates in the device.
An EPROM, or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet (UV) light source. EPROMs are easily recognizable by the transparent fused quartz window on the top of the package, through which the silicon chip is visible, and which permits exposure to ultraviolet light during erasing. It was invented by Dov Frohman in 1971.
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data indefinitely without electric power.
Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data.
Reading is an action performed by computers, to acquire data from a source and place it into their volatile memory for processing. Computers may read information from a variety of sources, such as magnetic storage, the Internet, or audio and video input ports. Reading is one of the core functions of a Turing machine.
Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory uses floating-gate memory cells, which consist of a single floating-gate transistor per cell.
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, typically longer than 10 years in modern devices. Usually Fowler-Nordheim tunneling or hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG.
Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology, but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical of a floating-gate structure. This approach allows memory manufacturers to reduce manufacturing costs five ways:
SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon", is a cross sectional structure of MOSFET (metal–oxide–semiconductor field-effect transistor), realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. This structure is often used for non-volatile memories, such as EEPROM and flash memories. It is sometimes used for TFT LCD displays. It is one of CTF (charge trap flash) variants. It is distinguished from traditional non-volatile memory structures by the use of silicon nitride (Si3N4 or Si9N10) instead of "polysilicon-based FG (floating-gate)" for the charge storage material. A further variant is "SHINOS" ("silicon"—"hi-k"—"nitride"—"oxide"—"silicon"), which is substituted top oxide layer with high-κ material. Another advanced variant is "MONOS" ("metal–oxide–nitride–oxide–silicon"). Companies offering SONOS-based products include Cypress Semiconductor, Macronix, Toshiba, United Microelectronics Corporation and FloadiaArchived 2022-11-01 at the Wayback Machine.
In electronics, a multi-level cell (MLC) is a memory cell capable of storing more than a single bit of information, compared to a single-level cell (SLC), which can store only one bit per memory cell. A memory cell typically consists of a single floating-gate MOSFET, thus multi-level cells reduce the number of MOSFETs required to store the same amount of data as single-level cells.
Fujio Masuoka is a Japanese engineer, who has worked for Toshiba and Tohoku University, and is currently chief technical officer (CTO) of Unisantis Electronics. He is best known as the inventor of flash memory, including the development of both the NOR flash and NAND flash types in the 1980s. He also invented the first gate-all-around (GAA) MOSFET (GAAFET) transistor, an early non-planar 3D transistor, in 1988.
Random-access memory is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media, where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
A single-board microcontroller is a microcontroller built onto a single printed circuit board. This board provides all of the circuitry necessary for a useful control task: a microprocessor, I/O circuits, a clock generator, RAM, stored program memory and any necessary support ICs. The intention is that the board is immediately useful to an application developer, without requiring them to spend time and effort to develop controller hardware.
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 and reset to store a logic 0. Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.
George Perlegos is a Greek-American computer scientist and engineer, best known for pioneering the use of EEPROM and founding Atmel.