 | |
| Company type | Public |
|---|---|
| TWSE: 2337 | |
| Industry | Semiconductors |
| Founded | 1988 |
| Headquarters | |
![2M-BIT [256K x 8] CMOS Flash Memory ADSV-931 Mini Docking Station - LAN module - Macronix 28F2000PQC-12C4-93548.jpg](http://upload.wikimedia.org/wikipedia/commons/thumb/1/13/ADSV-931_Mini_Docking_Station_-_LAN_module_-_Macronix_28F2000PQC-12C4-93548.jpg/170px-ADSV-931_Mini_Docking_Station_-_LAN_module_-_Macronix_28F2000PQC-12C4-93548.jpg)
Macronix International Co., Ltd. (MCIX; often shortened to Macronix) is an integrated device manufacturer in the non-volatile memory (NVM) market. The company manufactures NOR Flash, NAND Flash, and ROM products for the consumer, communication, computing, automotive, and networking markets. Its headquarters are located in Taiwan.
Headquartered in Taiwan, Macronix was established in 1989. By 1997, the company was a global supplier of Mask ROM and EPROMs. [1]
In 2012 the company developed a process to prolong the life of solid state drives. [2]
Macronix developed specialized memory chips for the consumer electronics industry, including those used in Nintendo's 3DS and Switch devices, [3] and Samsung's wearable electronic devices. [4]
The company presently has more than 4,000 employees—approximately one-fifth of whom serve in research and development roles. Macronix's total revenues in 2023 were US$888 million, slightly more than one-half of which was derived from NOR flash, followed by ROM revenues at approximately one-third.
As of March 2024, Macronix has had 9,200 patents granted.
Macronix owns two in-house wafer-manufacturing foundries—one for 200-nanometer wafers, the other for 300-nanometer wafers. The company also has sales and support branches in Europe, the United States, Japan, Korea, Singapore, and China.
Recognizing the market opportunity in proprietary semiconductor designs becoming high-volume, open-market flash memory, Macronix leveraged flash memory customized for specific customers into widely available devices for broader applications. [5]
Macronix has developed partnerships with various microcontroller manufacturers to pair its OctaBus flash memory with the partners’ MCUs. [6]
In the automotive market, Macronix's automotive-grade ArmorFlash and OctaFlash memory families are being adopted by automotive-electronics semiconductor and system makers such as Nvidia and NXP to bring highly secure data storage to vehicles. [7] [8] [9]
In 2021, Macronix became the first NVM manufacturer to bring 1.2-volt, 120 MHz Serial NOR flash to mass production, contributing to a new generation and broader range of devices requiring ultra-low-power flash memory. [10] [11]
Macronix in 2022 introduced its memory-centric computing concept, developed to enable AI-focused computation within flash devices. [12] [13] Also in 2022, Macronix received EE Times Asia's Best Memory Product award for the second consecutive year. [14]
Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating-gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.
Taiwan Semiconductor Manufacturing Company Limited is a Taiwanese multinational semiconductor contract manufacturing and design company. It is the world's most valuable semiconductor company, the world's largest dedicated independent ("pure-play") semiconductor foundry, and its country's largest company, with headquarters and main operations located in the Hsinchu Science Park in Hsinchu, Taiwan. Although the central government of Taiwan is the largest individual shareholder, the majority of TSMC is owned by foreign investors. In 2023, the company was ranked 44th in the Forbes Global 2000. Taiwan's exports of integrated circuits amounted to $184 billion in 2022, accounted for nearly 25 percent of Taiwan's GDP. TSMC constitutes about 30 percent of the Taiwan Stock Exchange's main index.
The foundry model is a microelectronics engineering and manufacturing business model consisting of a semiconductor fabrication plant, or foundry, and an integrated circuit design operation, each belonging to separate companies or subsidiaries.
Phase-change memory is a type of non-volatile random-access memory. PRAMs exploit the unique behaviour of chalcogenide glass. In PCM, heat produced by the passage of an electric current through a heating element generally made of titanium nitride is used to either quickly heat and quench the glass, making it amorphous, or to hold it in its crystallization temperature range for some time, thereby switching it to a crystalline state. PCM also has the ability to achieve a number of distinct intermediary states, thereby having the ability to hold multiple bits in a single cell, but the difficulties in programming cells in this way has prevented these capabilities from being implemented in other technologies with the same capability.
The 90 nm process refers to the technology used in semiconductor manufacturing to create integrated circuits with a minimum feature size of 90 nanometers. It was an advancement over the previous 130 nm process. Eventually, it was succeeded by smaller process nodes, such as the 65 nm, 45 nm, and 32 nm processes.
SK Hynix Inc. is a South Korean supplier of dynamic random-access memory (DRAM) chips and flash memory chips. SK Hynix is one of the world's largest semiconductor vendors.
The transistor count is the number of transistors in an electronic device. It is the most common measure of integrated circuit complexity. The rate at which MOS transistor counts have increased generally follows Moore's law, which observes that transistor count doubles approximately every two years. However, being directly proportional to the area of a die, transistor count does not represent how advanced the corresponding manufacturing technology is. A better indication of this is transistor density which is the ratio of a semiconductor's transistor count to its die area.
Microchip Technology Incorporated is a publicly listed American corporation that manufactures microcontroller, mixed-signal, analog, and Flash-IP integrated circuits. Its products include microcontrollers, Serial EEPROM devices, Serial SRAM devices, embedded security devices, radio frequency (RF) devices, thermal, power, and battery management analog devices, as well as linear, interface and wireless products.
The "22 nm" node is the process step following 32 nm in CMOS MOSFET semiconductor device fabrication. The typical half-pitch for a memory cell using the process is around 22 nm. It was first demonstrated by semiconductor companies for use in RAM memory in 2008. In 2010, Toshiba began shipping 24 nm flash memory chips, and Samsung Electronics began mass-producing 20 nm flash memory chips. The first consumer-level CPU deliveries using a 22 nm process started in April 2012 with the Intel Ivy Bridge processors.
The "14 nanometer process" refers to a marketing term for the MOSFET technology node that is the successor to the "22 nm" node. The "14 nm" was so named by the International Technology Roadmap for Semiconductors (ITRS). Until about 2011, the node following "22 nm" was expected to be "16 nm". All "14 nm" nodes use FinFET technology, a type of multi-gate MOSFET technology that is a non-planar evolution of planar silicon CMOS technology.
In electronics, a multi-level cell (MLC) is a memory cell capable of storing more than a single bit of information, compared to a single-level cell (SLC), which can store only one bit per memory cell. A memory cell typically consists of a single floating-gate MOSFET, thus multi-level cells reduce the number of MOSFETs required to store the same amount of data as single-level cells.
Spansion Inc. was an American-based company that designed, developed, and manufactured flash memory, microcontrollers, mixed-signal and analog products, and system-on-chip (SoC) solutions. The company had more than 3,700 employees in 2014 and was headquartered in Sunnyvale, California. Spansion was a joint-venture between AMD and Fujitsu.
Universal Flash Storage (UFS) is a flash storage specification for digital cameras, mobile phones and consumer electronic devices. It was designed to bring higher data transfer speed and increased reliability to flash memory storage, while reducing market confusion and removing the need for different adapters for different types of cards. The standard encompasses both packages permanently embedded within a device (eUFS), and removable UFS memory cards.
Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing software that is rarely changed during the life of the system, also known as firmware. Software applications, such as video games, for programmable devices can be distributed as plug-in cartridges containing ROM.
Integrated Device Technology, Inc. (IDT), was an American semiconductor company headquartered in San Jose, California. The company designed, manufactured, and marketed low-power, high-performance mixed-signal semiconductor products for the advanced communications, computing, and consumer industries. The company marketed its products primarily to original equipment manufacturers (OEMs). Founded in 1980, the company began as a provider of complementary metal-oxide semiconductors (CMOS) for the communications business segment and computing business segments. The company focused on three major areas: communications infrastructure, high-performance computing, and advanced power management. Between 2018 and 2019, IDT was acquired by Renesas Electronics.
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 and reset to store a logic 0. Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.
High Bandwidth Memory (HBM) is a computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM) initially from Samsung, AMD and SK Hynix. It is used in conjunction with high-performance graphics accelerators, network devices, high-performance datacenter AI ASICs, as on-package cache in CPUs and on-package RAM in upcoming CPUs, and FPGAs and in some supercomputers. The first HBM memory chip was produced by SK Hynix in 2013, and the first devices to use HBM were the AMD Fiji GPUs in 2015.
The Chinese semiconductor industry, including integrated circuit design and manufacturing, forms a major part of mainland China's information technology industry.
