3D XPoint

Last updated
3D Cross Point 2 layer diagram 3D XPoint.png
3D Cross Point 2 layer diagram
Intel Optane in M.2 card format 2018 Pamiec Intel Optane 32GB.jpg
Intel Optane in M.2 card format

3D XPoint (pronounced three-D cross point) is a discontinued non-volatile memory (NVM) technology developed jointly by Intel and Micron Technology. It was announced in July 2015 and was available on the open market under the brand name Optane (Intel) from April 2017 to July 2022. [1] Bit storage is based on a change of bulk resistance, in conjunction with a stackable cross-grid data access array. [2] [3] Initial prices are less than dynamic random-access memory (DRAM) but more than flash memory. [4]

Contents

As a non-volatile memory, 3D XPoint has a number of features that distinguish it from other currently available RAM and NVRAM. Although the first generations of 3D XPoint were not especially large or fast, 3D XPoint was used to create some of the fastest [5] SSDs available as of 2019, with small-write latency. As the memory is inherently fast, and byte-addressable, techniques such as read-modify-write and caching used to enhance traditional SSDs are not needed to obtain high performance. In addition, chipsets such as Cascade Lake are designed with inbuilt support for 3D XPoint,[ citation needed ] that allow it to be used as a caching or acceleration disk, and it is also fast enough to be used as non-volatile RAM (NVRAM) or persistent memory in a DIMM package.

History

Development

Development of 3D XPoint began around 2012. [6] Intel and Micron had developed other non-volatile phase-change memory (PCM) technologies previously; [note 1] Mark Durcan of Micron said 3D XPoint architecture differs from previous offerings of PCM, and uses chalcogenide materials for both selector and storage parts of the memory cell that are faster and more stable than traditional PCM materials like GST. [8] But today, it is thought of as a subset of ReRAM. [9]

3D XPoint has been stated to use electrical resistance and to be bit addressable. [10] Similarities to the resistive random-access memory under development by Crossbar Inc. have been noted, but 3D XPoint uses different storage physics. [6] Specifically, transistors are replaced by threshold switches as selectors in the memory cells. [11] 3D XPoint developers indicate that it is based on changes in resistance of the bulk material. [2] Intel CEO Brian Krzanich responded to ongoing questions on the XPoint material that the switching was based on "bulk material properties". [3] Intel has stated that 3D XPoint does not use a phase-change or memristor technology, [12] although this is disputed by independent reviewers. [13]

3D XPoint has been the most widely produced standalone memory based on other than charge storage, whereas other alternative memories, like ReRAM or Magnetoresistive RAM, have so far only been widely developed on embedded platforms. [14]

Initial production

In mid-2015, Intel announced the Optane brand for storage products based on 3D XPoint technology. [15] Micron (using the QuantX brand) estimated the memory to be sold for about half the price of dynamic random-access memory (DRAM), but four to five times the price of flash memory. [16] Initially, a wafer fabrication facility in Lehi, Utah, operated by IM Flash Technologies LLC (an Intel-Micron joint venture) made small quantities of 128 Gbit chips in 2015. They stack two 64 Gbit planes. [6] [17] In early 2016 mass production of the chips was expected in 12 to 18 months. [18]

In early 2016, IM Flash announced that the first generation of solid-state drives would achieve 95000 IOPS throughput with 9 microsecond latency. [18] This low latency significantly increases IOPS at low queue depths for random operations. At Intel Developer Forum 2016, Intel demonstrated PCI Express (PCIe) 140 GB development boards showing 2.4–3× improvement in benchmarks compared to PCIe NAND flash solid-state drives (SSDs). [19] On March 19, 2017, Intel announced their first product: a PCIe card available in the second half of 2017. [20] [21]

Reception

Optane 900p sequential mixed read-write performance, compared to a wide range of well reputed consumer SSDs. The graph shows how traditional SSD's performance drops sharply to around 500-700 MB/s for all but nearly-pure read and write tasks, whereas the 3D XPoint device is unaffected and consistently produces around 2200-2400 MB/s throughput in the same test. Credit: Tom's Hardware. Intel Optane 900p Sequential Steady-state mixed performance graph, from a review by Tom's Hardware.png
Optane 900p sequential mixed read-write performance, compared to a wide range of well reputed consumer SSDs. The graph shows how traditional SSD's performance drops sharply to around 500–700 MB/s for all but nearly-pure read and write tasks, whereas the 3D XPoint device is unaffected and consistently produces around 2200–2400 MB/s throughput in the same test. Credit: Tom's Hardware .

Despite the initial lukewarm reception when first released, 3D XPoint – particularly in the form of Intel's Optane range – has been highly acclaimed and widely recommended for tasks where its specific features are of value, with reviewers such as Storage Review concluding in August 2018 that for low-latency workloads, 3D XPoint was producing 500,000 4K sustained IOPS for both reads and writes, with 3–15 microsecond latencies, and that at present "there is currently nothing [else] that comes close", [22] while Tom's Hardware described the Optane 900p in December 2017 as being like a "mythical creature" that must be seen to be believed, and which doubled the speed of the best previous consumer devices. [23] ServeTheHome concluded in 2017 that in read, write and mixed tests, Optane SSDs were consistently around 2.5× as fast as the best Intel datacentre SSDs which had preceded them, the P3700 NVMe. [24] AnandTech noted that consumer Optane-based SSDs were similar in performance to the best non-3D-XPoint SSDs for large transfers, with both being "blown away" by the large transfer performance of enterprise Optane SSDs. [25]

Sale of Lehi fab, and discontinuation

On March 16, 2021, Micron announced that it would cease development of 3D XPoint in order to develop products based on Compute Express Link (CXL), due to a lack of demand. [26] [27] The Lehi fab was never fully utilized, and was sold to Texas Instruments for USD 900 million. [28] Intel responded at the time that its ability to supply Intel Optane products would not be affected. [29]

In 2021, Intel discontinued its consumer line of Optane products, [30] and in July 2022, Intel announced the winding down of the Optane division, effectively discontinuing the development of 3D XPoint. [31] [32]

Compatibility

Intel

Intel distinguishes between "Intel Optane Memory" and "Intel Optane SSDs". As a memory component, Optane requires specific chipset and CPU support. [33] As an ordinary SSD, Optane is broadly compatible with a very wide range of systems, and its main requirements are much like any other SSD – ability to be plugged into the hardware, operating system, BIOS/UEFI and driver support for NVMe, and adequate cooling. [34]

Micron

Micron offered NVMe AIC SSD drives (QuantX X100 [35] ) which maintained compatibility with NVMe capable systems. Native support as an acceleration device is not supported (although tiered storage can be used). [36]

See also

Notes

  1. Intel and Numonyx presented 64 Gb stackable PCM chips in 2009. [7]

Related Research Articles

<span class="mw-page-title-main">Flash memory</span> Electronic non-volatile computer storage device

Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.

<span class="mw-page-title-main">Micron Technology</span> American company producing semiconductor devices

Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and USB flash drives. It is headquartered in Boise, Idaho. Its consumer products, including the Ballistix line of memory modules, are marketed under the Crucial brand. Micron and Intel together created IM Flash Technologies, which produced NAND flash memory. It owned Lexar between 2006 and 2017.

<span class="mw-page-title-main">Southbridge (computing)</span> One of the two chips in the core logic chipset architecture on a PC motherboard

The southbridge is one of the two chips in the core logic chipset on older personal computer (PC) motherboards, the other being the northbridge. As of 2023, most personal computer devices no longer use a set of two chips, and instead have a single chip acting as the 'chipset', for example Intel's Z790 chipset.

In computing, a hybrid drive is a logical or physical storage device that combines a faster storage medium such as solid-state drive (SSD) with a higher-capacity hard disk drive (HDD). The intent is adding some of the speed of SSDs to the cost-effective storage capacity of traditional HDDs. The purpose of the SSD in a hybrid drive is to act as a cache for the data stored on the HDD, improving the overall performance by keeping copies of the most frequently used data on the faster SSD drive.

Intel Turbo Memory is a technology introduced by Intel Corporation that uses NAND flash memory modules to reduce the time it takes for a computer to power up, access programs, and write data to the hard drive. During development, the technology was codenamed Robson. It is supported by most of the Core 2 Mobile chipset series, but not by the newer Core i Series mobile chipsets.

<span class="mw-page-title-main">Solid-state drive</span> Data storage device

A solid-state drive (SSD) is a solid-state storage device that uses integrated circuit assemblies to store data persistently, typically using flash memory, and functions as secondary storage in the hierarchy of computer storage. It is also sometimes called a semiconductor storage device, a solid-state device, or a solid-state disk, even though SSDs lack the physical spinning disks and movable read-write heads used in hard disk drives (HDDs) and floppy disks. SSD also has rich internal parallelism for data processing.

<span class="mw-page-title-main">Phison</span> Taiwanese electronics company

Phison Electronics Corporation is a Taiwanese public electronics company that primarily designs, manufactures and sells controllers for NAND flash memory chips. These are integrated into flash-based products such as USB flash drives, memory cards, and solid-state drives (SSDs).

<span class="mw-page-title-main">Multi-level cell</span> Memory cell capable of storing more than a single bit of information

In electronics, a multi-level cell (MLC) is a memory cell capable of storing more than a single bit of information, compared to a single-level cell (SLC), which can store only one bit per memory cell. A memory cell typically consists of a single floating-gate MOSFET, thus multi-level cells reduce the number of MOSFETs required to store the same amount of data as single-level cells.

<span class="mw-page-title-main">LGA 1155</span> Intel CPU socket

LGA 1155, also called Socket H2, is a zero insertion force flip-chip land grid array (LGA) CPU socket designed by Intel for their CPUs based on the Sandy Bridge and Ivy Bridge microarchitectures.

NVM Express (NVMe) or Non-Volatile Memory Host Controller Interface Specification (NVMHCIS) is an open, logical-device interface specification for accessing a computer's non-volatile storage media usually attached via the PCI Express bus. The initial NVM stands for non-volatile memory, which is often NAND flash memory that comes in several physical form factors, including solid-state drives (SSDs), PCIe add-in cards, and M.2 cards, the successor to mSATA cards. NVM Express, as a logical-device interface, has been designed to capitalize on the low latency and internal parallelism of solid-state storage devices.

In computer data storage, Smart Response Technology is a proprietary caching mechanism introduced in 2011 by Intel for their Z68 chipset, which allows a SATA solid-state drive (SSD) to function as cache for a hard disk drive (HDD).

<span class="mw-page-title-main">IBM FlashSystem</span> IBM Storage enterprise system that store data on flash memory

IBM FlashSystem is an IBM Storage enterprise system that stores data on flash memory. Unlike storage systems that use standard solid-state drives, IBM FlashSystem products incorporate custom hardware based on technology from the 2012 IBM acquisition of Texas Memory Systems.

A NVDIMM or non-volatile DIMM is a type of persistent random-access memory for computers using widely used DIMM form-factors. Non-volatile memory is memory that retains its contents even when electrical power is removed, for example from an unexpected power loss, system crash, or normal shutdown. Properly used, NVDIMMs can improve application performance and system crash recovery time. They enhance solid-state drive (SSD) endurance and reliability.

<span class="mw-page-title-main">SATA Express</span> Computer device interface

SATA Express is a computer bus interface that supports both Serial ATA (SATA) and PCI Express (PCIe) storage devices, initially standardized in the SATA 3.2 specification. The SATA Express connector used on the host side is backward compatible with the standard SATA data connector, while it also provides two PCI Express lanes as a pure PCI Express connection to the storage device.

<span class="mw-page-title-main">Apple A9X</span> System on a chip (SoC) designed by Apple Inc.

The Apple A9X is a 64-bit ARM architecture-based system on a chip (SoC) designed by Apple Inc. It first appeared in the iPad Pro, which was announced on September 9, 2015 and was released on November 11, 2015. The A9X has the M9 motion coprocessor embedded in it, something not seen in previous chip generations. It is a variant of the A9 and Apple claims that it has 80% more CPU performance and twice the GPU performance of its predecessor, the A8X.

Virtium Solid State Storage and Memory is a privately held American company that manufactures semiconductor memory and solid-state disk (SSD) products for data storage in industrial/machine-to-machine designs, embedded systems, including small-footprint designs, and Industrial Internet of Things (IIoT) applications. The company's primary markets of focus include defense, industrial systems, network communications, and transportation. The name Virtium is derived from the word virtue.

IBM FlashCore Modules (FCM) are solid state technology computer data storage modules using PCI Express attachment and the NVMe command set. They are offered as an alternative to industry-standard 2.5" NVMe SSDs in selected arrays from the IBM FlashSystem family, with raw storage capacities of 4.8 TB, 9.6 TB, 19.2 TB and 38.4 TB. FlashCore modules support hardware self-encryption and real-time inline hardware data compression up to 115.2 TB address space, without performance impact.

References

  1. "Intel Launches Optane Memory M.2 Cache SSDs for Consumer Market". AnandTech. 27 March 2017. Retrieved 13 November 2017.
  2. 1 2 Clarke, Peter (28 July 2015), "Intel, Micron Launch "Bulk-Switching" ReRAM", EE Times, "The switching mechanism is via changes in resistance of the bulk material," was all Intel would add in response to questions sent via email.
  3. 1 2 Merrick, Rick, "Intel's Krzanich: CEO Q&A at IDF", EE Times, p. 2
  4. Evangelho, Jason (July 28, 2015). "Intel and Micron Jointly Unveil Disruptive, Game-Changing 3D XPoint Memory, 1000x Faster than NAND". Hot Hardware. Archived from the original on August 15, 2016. Retrieved January 21, 2016. Intel's Rob Crooke explained, 'You could put the cost somewhere between NAND and DRAM.'
  5. "Intel Optane SSD P5800X Review". 6 April 2021.
  6. 1 2 3 Clarke, Peter (28 July 2015), "Intel, Micron Launch "Bulk-Switching" ReRAM", EE Times
  7. McGrath, Dylan (28 Oct 2009), "Intel, Numonyx claim phase-change memory milestone", EE Times
  8. Clarke, Peter (31 July 2015), "Patent Search Supports View 3D XPoint Based on Phase-Change", EE Times
  9. "Partnership Puts ReRAM in SSDs". EE Times. 2017-09-27.
  10. Hruska, Joel (29 July 2015). "Intel, Micron reveal Xpoint, a new memory architecture that could outclass DDR4 and NAND". ExtremeTech.
  11. https://www.linkedin.com/pulse/can-threshold-switches-replace-transistors-memory-cell-frederick-chen also at https://semiwiki.com/semiconductor-manufacturers/286317-can-threshold-switches-replace-transistors-in-the-memory-cell/
  12. Mellor, Chris (28 July 2015). "Just ONE THOUSAND times BETTER than FLASH! Intel, Micron's amazing claim". The Register. An Intel spokesperson categorically denied that it was a phase-change memory process or a memristor technology. Spin-transfer torque was also dismissed
  13. Malventano, Allyn (2 June 2017). "How 3D XPoint Phase-Change Memory Works". PC Perspective. Retrieved 8 June 2017.
  14. LaPedus, Mark (August 16, 2018). "Next-Gen Memory Ramping Up". Semiconductor Engineering.
  15. Smith, Ryan (18 Aug 2015), "Intel Announces Optane Storage Brand For 3D XPoint Products", AnandTech
  16. Mearian, Lucas (August 9, 2016). "Micron reveals marketing details about 3D XPoint memory QuantX: Intel, Micron may have made a mistake announcing 3D XPoint a year ago". Computer World. Retrieved March 31, 2017.
  17. Smith, Ryan (18 August 2015), "Intel Announces Optane Storage Brand For 3D XPoint Products", Anandtech, products will be available in 2016, in both standard SSD (PCIe) form factors for everything from Ultrabooks to servers, and in a DIMM form factor for Xeon systems for even greater bandwidth and lower latencies. As expected, Intel will be providing storage controllers optimized for the 3D XPoint memory
  18. 1 2 Merrick, Rick (14 Jan 2016), "3D XPoint Steps Into the Light", EE Times
  19. Cutress, Ian (26 August 2016). "Intel's 140 GB Optane 3D Xpoint PCIe SSD Spotted at IDF". Anandtech. Retrieved 26 August 2016.
  20. Bright, Peter (March 19, 2017). "Intel's first Optane SSD: 375 GB that you can also use as RAM". Ars Technica. Retrieved March 31, 2017.
  21. Figas, Jon (March 19, 2017). "Intel's first hyper-fast 3D drive is meant for servers". En Gadget. Retrieved March 31, 2017.
  22. "Intel Optane SSD DC P4800X Review". Storage review. 31 July 2018. Retrieved 15 April 2019.
  23. "Intel Optane SSD 900P 256GB Performance Testing". Tom's Hardware. 4 December 2017. Retrieved 15 April 2019.
  24. Robinson, Cliff (24 April 2017). "Intel Optane: Hands-on Real World Benchmark and Test Results". Serve thehome. Retrieved 15 April 2019.
  25. Tallis, Billy. "The Intel Optane Memory (SSD) Preview: 32GB of Kaby Lake Caching". Anandtech. Retrieved 15 April 2019.
  26. "Micron Will Stop Making 3D XPoint Memory This Year".
  27. Micron ceases 3D XPoint
  28. Tallis, Billy. "Micron Abandons 3D XPoint Memory Technology". www.anandtech.com.
  29. updated, Paul Alcorn last (March 16, 2021). "Micron to Sell 3D XPoint Memory Fab and Cease Further Development (Updated)". Tom's Hardware.
  30. "Intel quietly kills its face-melting Optane desktop SSDs". PCWorld. January 19, 2021. Retrieved February 15, 2021.
  31. "Intel to Wind Down Optane Memory Business - 3D XPoint Storage Tech Reaches Its End".
  32. Why Intel killed its Optane memory business, The Register, 2022-07-22.
  33. "Intel Optane Memory: Before You Buy, Key Requirements". Intel. Retrieved 15 April 2019.
  34. "System Requirements for an Intel Optane SSD 900P Series Drive". Intel. Retrieved 15 April 2019.
  35. "Micron X100 NVMe SSD (3D XPoint) Unveiled | StorageReview.com - Storage Reviews". www.storagereview.com. 2019-10-24. Archived from the original on 2019-12-18. Retrieved 2019-12-18.
  36. "X100". www.micron.com. Archived from the original on 2020-07-24. Retrieved 2019-12-18.