Computer memory stores information, such as data and programs for immediate use in the computer. The term memory is often synonymous with the term primary storage or main memory. An archaic synonym for memory is store.
An integrated circuit is a set of electronic circuits on one small flat piece of semiconductor material, usually silicon. Large numbers of miniaturized transistors and other electronic components are integrated together on the chip. This results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete components, allowing a large transistor count.
Static random-access memory is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed.
Dynamic random-access memory is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory, since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.
The Intel 4004 is a 4-bit central processing unit (CPU) released by Intel Corporation in 1971. Sold for US$60, it was the first commercially produced microprocessor, and the first in a long line of Intel CPUs.
The history of computing hardware starting at 1960 is marked by the conversion from vacuum tube to solid-state devices such as transistors and then integrated circuit (IC) chips. Around 1953 to 1959, discrete transistors started being considered sufficiently reliable and economical that they made further vacuum tube computers uncompetitive. Metal–oxide–semiconductor (MOS) large-scale integration (LSI) technology subsequently led to the development of semiconductor memory in the mid-to-late 1960s and then the microprocessor in the early 1970s. This led to primary computer memory moving away from magnetic-core memory devices to solid-state static and dynamic semiconductor memory, which greatly reduced the cost, size, and power consumption of computers. These advances led to the miniaturized personal computer (PC) in the 1970s, starting with home computers and desktop computers, followed by laptops and then mobile computers over the next several decades.
In electronics and computing, a soft error is a type of error where a signal or datum is wrong. Errors may be caused by a defect, usually understood either to be a mistake in design or construction, or a broken component. A soft error is also a signal or datum which is wrong, but is not assumed to imply such a mistake or breakage. After observing a soft error, there is no implication that the system is any less reliable than before. One cause of soft errors is single event upsets from cosmic rays.
Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory uses floating-gate memory cells, which consist of a single floating-gate transistor per cell.
Mostek Corporation was a semiconductor integrated circuit manufacturer, founded in 1969 by L. J. Sevin, Louay E. Sharif, Richard L. Petritz and other ex-employees of Texas Instruments. At its peak in the late 1970s, Mostek held an 85% market share of the dynamic random-access memory (DRAM) memory chip market worldwide, until being eclipsed by lower-priced Japanese DRAM manufacturers who were accused of dumping memory on the market.
Ferroelectric RAM is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. An FeRAM chip contains a thin film of ferroelectric material, often lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT layer change polarity in an electric field, thereby producing a power-efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption or magnetic interference, making FeRAM a reliable nonvolatile memory.
In integrated circuits, depletion-load NMOS is a form of digital logic family that uses only a single power supply voltage, unlike earlier NMOS logic families that needed more than one different power supply voltage. Although manufacturing these integrated circuits required additional processing steps, improved switching speed and the elimination of the extra power supply made this logic family the preferred choice for many microprocessors and other logic elements.
The transistor count is the number of transistors in an electronic device. It is the most common measure of integrated circuit complexity. The rate at which MOS transistor counts have increased generally follows Moore's law, which observes that transistor count doubles approximately every two years. However, being directly proportional to the area of a chip, transistor count does not represent how advanced the corresponding manufacturing technology is: a better indication of this is transistor density.
Error correction code memory is a type of computer data storage that uses an error correction code (ECC) to detect and correct n-bit data corruption which occurs in memory. ECC memory is used in most computers where data corruption cannot be tolerated, like industrial control applications, critical databases, and infrastructural memory caches.
Rubylith is a brand of masking film, invented and trademarked by the Ulano Corporation. Today the brand has become genericized to the point that it has become synonymous with all coloured masking films.
The 10 μm process is the level of MOSFET semiconductor process technology that was commercially reached around 1971, by leading semiconductor companies such as RCA and Intel.
PMOS or pMOS logic is a family of digital circuits based on p-channel, enhancement mode metal–oxide–semiconductor field-effect transistors (MOSFETs). In the late 1960s and early 1970s, PMOS logic was the dominant semiconductor technology for large-scale integrated circuits before being superseded by NMOS and CMOS devices.
Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing software that is rarely changed during the life of the system, also known as firmware. Software applications for programmable devices can be distributed as plug-in cartridges containing ROM.
Random-access memory is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media, where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 and reset to store a logic 0. Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.
Mosel Vitelic Inc. manufactures power discrete, power management IC and analog IC technologies. Mosel Vitelic Inc. joined the Taiwan Stock Exchange in September 1995.
