Srimanta Baishya

Srimanta Baishya
Srimanta Baishya
Nationality	Indian
Academic background
Alma mater	Jadavpur University

Last updated August 28, 2025

↑ "Srimanta Baishya". scholar.google.com. Retrieved 17 September 2023.
↑ "Prof. Srimanta Baishya |" . Retrieved 17 September 2023.
↑ "Vidwan | Profile Page". vidwan.inflibnet.ac.in. Retrieved 17 September 2023.
↑ "National Institute of Technology, Silchar". josaa.admissions.nic.in. Archived from the original on 17 April 2023. Retrieved 17 September 2023.
↑ "INDIAN RESEARCH INFORMATION NETWORK SYSTEM". irins.inflibnet.ac.in. Retrieved 17 September 2023.
↑ Baishya, Srimanta; Mallik, Abhijit; Sarkar, Chandan Kumar (1 January 2008). "A threshold voltage model for short-channel MOSFETs taking into account the varying depth of channel depletion layers around the source and drain" . Microelectronics Reliability. 48 (1): 17–22. Bibcode:2008MiRe...48...17B. doi:10.1016/j.microrel.2007.01.086. ISSN 0026-2714.
↑ Baishya, S.; Mallik, A.; Sarkar, C. K. (September 2007). "A Pseudo Two-Dimensional Subthreshold Surface Potential Model for Dual-Material Gate MOSFETs". IEEE Transactions on Electron Devices. 54 (9): 2520–2525. Bibcode:2007ITED...54.2520B. doi:10.1109/TED.2007.903204. ISSN 1557-9646.
↑ Baishya, S; Mallik, A; Sarkar, C K (1 September 2007). "A surface potential based subthreshold drain current model for short-channel MOS transistors" . Semiconductor Science and Technology. 22 (9): 1066–1069. Bibcode:2007SeScT..22.1066B. doi:10.1088/0268-1242/22/9/015. ISSN 0268-1242.
↑ Baishya, Srimanta; Mallik, Abhijit; Sarkar, Chandan Kumar (1 April 2007). "Subthreshold surface potential and drain current models for short-channel pocket-implanted MOSFETs" . Microelectronic Engineering. 84 (4): 653–662. doi:10.1016/j.mee.2006.12.008. ISSN 0167-9317.
↑ Baishya, S.; Mallik, A.; Sarkar, C.K. (March 2006). "A subthreshold surface potential model for short-channel MOSFET taking into account the varying depth of channel depletion layer due to source and drain junctions". IEEE Transactions on Electron Devices. 53 (3): 507–514. Bibcode:2006ITED...53..507B. doi:10.1109/TED.2005.864364. ISSN 1557-9646.

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[1] "Srimanta Baishya". scholar.google.com. Retrieved 17 September 2023.

[2] "Prof. Srimanta Baishya |" . Retrieved 17 September 2023.

[3] "Vidwan | Profile Page". vidwan.inflibnet.ac.in. Retrieved 17 September 2023.

[4] "National Institute of Technology, Silchar". josaa.admissions.nic.in. Archived from the original on 17 April 2023. Retrieved 17 September 2023.

[5] "INDIAN RESEARCH INFORMATION NETWORK SYSTEM". irins.inflibnet.ac.in. Retrieved 17 September 2023.

[6] Baishya, Srimanta; Mallik, Abhijit; Sarkar, Chandan Kumar (1 January 2008). "A threshold voltage model for short-channel MOSFETs taking into account the varying depth of channel depletion layers around the source and drain" . Microelectronics Reliability. 48 (1): 17–22. Bibcode:2008MiRe...48...17B. doi:10.1016/j.microrel.2007.01.086. ISSN 0026-2714.

[7] Baishya, S.; Mallik, A.; Sarkar, C. K. (September 2007). "A Pseudo Two-Dimensional Subthreshold Surface Potential Model for Dual-Material Gate MOSFETs". IEEE Transactions on Electron Devices. 54 (9): 2520–2525. Bibcode:2007ITED...54.2520B. doi:10.1109/TED.2007.903204. ISSN 1557-9646.

[8] Baishya, S; Mallik, A; Sarkar, C K (1 September 2007). "A surface potential based subthreshold drain current model for short-channel MOS transistors" . Semiconductor Science and Technology. 22 (9): 1066–1069. Bibcode:2007SeScT..22.1066B. doi:10.1088/0268-1242/22/9/015. ISSN 0268-1242.

[9] Baishya, Srimanta; Mallik, Abhijit; Sarkar, Chandan Kumar (1 April 2007). "Subthreshold surface potential and drain current models for short-channel pocket-implanted MOSFETs" . Microelectronic Engineering. 84 (4): 653–662. doi:10.1016/j.mee.2006.12.008. ISSN 0167-9317.

[10] Baishya, S.; Mallik, A.; Sarkar, C.K. (March 2006). "A subthreshold surface potential model for short-channel MOSFET taking into account the varying depth of channel depletion layer due to source and drain junctions". IEEE Transactions on Electron Devices. 53 (3): 507–514. Bibcode:2006ITED...53..507B. doi:10.1109/TED.2005.864364. ISSN 1557-9646.