A synaptic transistor is an electrical device that can learn in ways similar to a neural synapse. [1] It optimizes its own properties for the functions it has carried out in the past. The device mimics the behavior of the property of neurons called spike-timing-dependent plasticity, or STDP. [2] [3]
Its structure is similar to that of a field effect transistor, where an ionic liquid takes the place of the gate insulating layer between the gate electrode and the conducting channel. That channel is composed of samarium nickelate (SmNiO
3, or SNO) rather than the field effect transistor's doped silicon. [3]
A synaptic transistor has a traditional immediate response whose amount of current that passes between the source and drain contacts varies with voltage applied to the gate electrode. It also produces a much slower learned response such that the conductivity of the SNO layer varies in response to the transistor's STDP history, essentially by shuttling oxygen ions between the SNO and the ionic liquid. [3]
The analog of strengthening a synapse is to increase the SNO's conductivity, which essentially increases gain. Similarly, weakening a synapse is analogous to decreasing the SNO's conductivity, lowering the gain. [3]
The input and output of the synaptic transistor are continuous analog values, rather than digital on-off signals. While the physical structure of the device has the potential to learn from history, it contains no way to bias the transistor to control the memory effect. An external supervisory circuit converts the time delay between input and output into a voltage applied to the ionic liquid that either drives ions into the SNO or removes them. [3]
A network of such devices can learn particular responses to "sensory inputs", with those responses being learned through experience rather than explicitly programmed. [3]
A transistor is a semiconductor device used to amplify or switch electrical signals and power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum or as free electrons and ions through an ionized gas.
The metal–oxide–semiconductor field-effect transistor is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor.
The junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers.
Transistor–transistor logic (TTL) is a logic family built from bipolar junction transistors. Its name signifies that transistors perform both the logic function and the amplifying function, as opposed to earlier resistor–transistor logic (RTL) and diode–transistor logic (DTL).
Complementary metal–oxide–semiconductor is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips, and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors, data converters, RF circuits, and highly integrated transceivers for many types of communication.
A sensor is a device that produces an output signal for the purpose of sensing a physical phenomenon.
In neuroscience, an excitatory postsynaptic potential (EPSP) is a postsynaptic potential that makes the postsynaptic neuron more likely to fire an action potential. This temporary depolarization of postsynaptic membrane potential, caused by the flow of positively charged ions into the postsynaptic cell, is a result of opening ligand-gated ion channels. These are the opposite of inhibitory postsynaptic potentials (IPSPs), which usually result from the flow of negative ions into the cell or positive ions out of the cell. EPSPs can also result from a decrease in outgoing positive charges, while IPSPs are sometimes caused by an increase in positive charge outflow. The flow of ions that causes an EPSP is an excitatory postsynaptic current (EPSC).
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, nowadays typically longer than 10 years. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG.
In semiconductor electronics fabrication technology, a self-aligned gate is a transistor manufacturing feature whereby the gate electrode of a MOSFET is used as a mask for the doping of the source and drain regions. This technique ensures that the gate is naturally and precisely aligned to the edges of the source and drain.
In neurophysiology, a dendritic spike refers to an action potential generated in the dendrite of a neuron. Dendrites are branched extensions of a neuron. They receive electrical signals emitted from projecting neurons and transfer these signals to the cell body, or soma. Dendritic signaling has traditionally been viewed as a passive mode of electrical signaling. Unlike its axon counterpart which can generate signals through action potentials, dendrites were believed to only have the ability to propagate electrical signals by physical means: changes in conductance, length, cross sectional area, etc. However, the existence of dendritic spikes was proposed and demonstrated by W. Alden Spencer, Eric Kandel, Rodolfo Llinás and coworkers in the 1960s and a large body of evidence now makes it clear that dendrites are active neuronal structures. Dendrites contain voltage-gated ion channels giving them the ability to generate action potentials. Dendritic spikes have been recorded in numerous types of neurons in the brain and are thought to have great implications in neuronal communication, memory, and learning. They are one of the major factors in long-term potentiation.
Summation, which includes both spatial summation and temporal summation, is the process that determines whether or not an action potential will be generated by the combined effects of excitatory and inhibitory signals, both from multiple simultaneous inputs, and from repeated inputs. Depending on the sum total of many individual inputs, summation may or may not reach the threshold voltage to trigger an action potential.
Nonsynaptic plasticity is a form of neuroplasticity that involves modification of ion channel function in the axon, dendrites, and cell body that results in specific changes in the integration of excitatory postsynaptic potentials and inhibitory postsynaptic potentials. Nonsynaptic plasticity is a modification of the intrinsic excitability of the neuron. It interacts with synaptic plasticity, but it is considered a separate entity from synaptic plasticity. Intrinsic modification of the electrical properties of neurons plays a role in many aspects of plasticity from homeostatic plasticity to learning and memory itself. Nonsynaptic plasticity affects synaptic integration, subthreshold propagation, spike generation, and other fundamental mechanisms of neurons at the cellular level. These individual neuronal alterations can result in changes in higher brain function, especially learning and memory. However, as an emerging field in neuroscience, much of the knowledge about nonsynaptic plasticity is uncertain and still requires further investigation to better define its role in brain function and behavior.
Nanofluidic circuitry is a nanotechnology aiming for control of fluids in nanometer scale. Due to the effect of an electrical double layer within the fluid channel, the behavior of nanofluid is observed to be significantly different compared with its microfluidic counterparts. Its typical characteristic dimensions fall within the range of 1–100 nm. At least one dimension of the structure is in nanoscopic scale. Phenomena of fluids in nano-scale structure are discovered to be of different properties in electrochemistry and fluid dynamics.
NOMFET is a nanoparticle organic memory field-effect transistor. The transistor is designed to mimic the feature of the human synapse known as plasticity, or the variation of the speed and strength of the signal going from neuron to neuron. The device uses gold nano-particles of about 5—20 nm set with pentacene to emulate the change in voltages and speed within the signal. This device uses charge trapping/detrapping in an array of gold nanoparticles (NPs) at the SiO2/pentacene interface to design a SYNAPSTOR (synapse transistor) mimicking the dynamic plasticity of a biological synapse. This device (memristor-like) mimics short-term plasticity (STP) and temporal correlation plasticity (STDP, spike-timing dependent plasticity), two "functions" at the basis of learning processes. A compact model was developed, and these organic synapstors were used to demonstrate an associative memory, which can be trained to present a pavlovian response. A recent report showed that these organic synapse-transistors (synapstor) are working at 1 volt and with a plasticity typical response time in the range 100-200 ms. The device also works in contact with an electrolyte (EGOS : electrolyte gated organic synapstor) and can be interfaced with biologic neurons.
In physics, the field effect refers to the modulation of the electrical conductivity of a material by the application of an external electric field.
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.
The organic electrochemical transistor (OECT) is a transistor in which the drain current is controlled by the injection of ions from a liquid electrolyte into a conductor or semiconductor thin-film channel. The injection of ions in the channel is controlled through the application of a voltage to the gate electrode. The migrated ions into the films modulate the conductivity of the channel is called electrochemical doping. Hence the conductivity of the channel as well as the charge transport mechanism of the OECTs changes. Some OECTs exhibit multi-bits memory mechanism and it mimicked the synaptic functionalities of our brain. For that reason OECTs can be used as neuromorphic computing applications. OECTs are being explored for applications in biosensors, bioelectronics and large-area, low-cost electronics.
A voltage-controlled resistor (VCR) is a three-terminal active device with one input port and two output ports. The input-port voltage controls the value of the resistor between the output ports. VCRs are most often built with field-effect transistors (FETs). Two types of FETs are often used: the JFET and the MOSFET. There are both floating voltage-controlled resistors and grounded voltage-controlled resistors. Floating VCRs can be placed between two passive or active components. Grounded VCRs, the more common and less complicated design, require that one port of the voltage-controlled resistor be grounded.
Electrochemical Random-Access Memory (ECRAM) is a type of non-volatile memory (NVM) with multiple levels per cell (MLC) designed for deep learning analog acceleration. An ECRAM cell is a three-terminal device composed of a conductive channel, an insulating electrolyte, an ionic reservoir, and metal contacts. The resistance of the channel is modulated by ionic exchange at the interface between the channel and the electrolyte upon application of an electric field. The charge-transfer process allows both for state retention in the absence of applied power, and for programming of multiple distinct levels, both differentiating ECRAM operation from that of a field-effect transistor (FET). The write operation is deterministic and can result in symmetrical potentiation and depression, making ECRAM arrays attractive for acting as artificial synaptic weights in physical implementations of artificial neural networks (ANN). The technological challenges include open circuit potential (OCP) and semiconductor foundry compatibility associated with energy materials. Universities, government laboratories, and corporate research teams have contributed to the development of ECRAM for analog computing. Notably, Sandia National Laboratories designed a lithium-based cell inspired by solid-state battery materials, Stanford University built an organic proton-based cell, and International Business Machines (IBM) demonstrated in-memory selector-free parallel programming for a logistic regression task in an array of metal-oxide ECRAM designed for insertion in the back end of line (BEOL). In 2022, researchers at Massachusetts Institute of Technology built an inorganic, CMOS-compatible protonic technology that achieved near-ideal modulation characteristics using nanosecond fast pulses
