Tunnel junction

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Schematic representation of an electron tunneling through a barrier TyTunnelling.png
Schematic representation of an electron tunneling through a barrier

In electronics/spintronics, a tunnel junction is a barrier, such as a thin insulating layer or electric potential, between two electrically conducting materials. Electrons (or quasiparticles) pass through the barrier by the process of quantum tunnelling. Classically, the electron has zero probability of passing through the barrier. However, according to quantum mechanics, the electron has a non-zero wave amplitude in the barrier, and hence it has some probability of passing through the barrier. Tunnel junctions serve a variety of different purposes.

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Multijunction photovoltaic cell

In multijunction photovoltaic cells, tunnel junctions form the connections between consecutive p-n junctions. They function as an ohmic electrical contact in the middle of a semiconductor device.

Magnetic tunnel junction

In magnetic tunnel junctions, electrons tunnel through a thin insulating barrier from one magnetic material to another. [1] This can serve as a basis for a magnetic detector.

Superconducting tunnel junction

In superconducting tunnel junctions, two superconducting electrodes are separated by a non-superconducting barrier. Cooper pairs carry the supercurrent through the barrier by quantum tunneling, a phenomenon known as the Josephson effect. This setup can form the basis for extremely sensitive magnetometers, known as SQUIDs, as well as many other devices.

Tunnel diode

In tunnel diodes, a diode allows the tunneling of electrons for certain voltages. This allows them to be used for generating high-frequency signals.

Scanning tunneling microscope

In scanning tunneling microscopy (STM), the tip/air/substrate (metal-insulator-metal) can be viewed as a tunnel junction.

Related Research Articles

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A diode is a two-terminal electronic component that conducts current primarily in one direction ; it has low resistance in one direction, and high resistance in the other.

A semiconductor material has an electrical conductivity value falling between that of a conductor, such as metallic copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits.

Spintronics, also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems; the analogous effects in insulators fall into the field of multiferroics.

<span class="mw-page-title-main">Josephson effect</span> Quantum physical phenomenon

In physics, the Josephson effect is a phenomenon that occurs when two superconductors are placed in proximity, with some barrier or restriction between them. It is an example of a macroscopic quantum phenomenon, where the effects of quantum mechanics are observable at ordinary, rather than atomic, scale. The Josephson effect has many practical applications because it exhibits a precise relationship between different physics quantities, such as voltage and frequency, facilitating highly accurate measurements.

<span class="mw-page-title-main">Tunnel diode</span> Diode that works using quantum tunneling effect

A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki, Yuriko Kurose, and Takashi Suzuki when they were working at Tokyo Tsushin Kogyo, now known as Sony. In 1973, Esaki received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes. Robert Noyce independently devised the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it. Tunnel diodes were first manufactured by Sony in 1957, followed by General Electric and other companies from about 1960, and are still made in low volume today.

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Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough, electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon.

<span class="mw-page-title-main">Coulomb blockade</span>

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<span class="mw-page-title-main">Spin valve</span>

A spin valve is a device, consisting of two or more conducting magnetic materials, whose electrical resistance can change between two values depending on the relative alignment of the magnetization in the layers. The resistance change is a result of the giant magnetoresistive effect. The magnetic layers of the device align "up" or "down" depending on an external magnetic field. In the simplest case, a spin valve consists of a non-magnetic material sandwiched between two ferromagnets, one of which is fixed (pinned) by an antiferromagnet which acts to raise its magnetic coercivity and behaves as a "hard" layer, while the other is free (unpinned) and behaves as a "soft" layer. Due to the difference in coercivity, the soft layer changes polarity at lower applied magnetic field strength than the hard one. Upon application of a magnetic field of appropriate strength, the soft layer switches polarity, producing two distinct states: a parallel, low-resistance state, and an antiparallel, high-resistance state.

Cryogenic particle detectors operate at very low temperature, typically only a few degrees above absolute zero. These sensors interact with an energetic elementary particle and deliver a signal that can be related to the type of particle and the nature of the interaction. While many types of particle detectors might be operated with improved performance at cryogenic temperatures, this term generally refers to types that take advantage of special effects or properties occurring only at low temperature.

<span class="mw-page-title-main">Flux qubit</span> Superconducting qubit implementation

In quantum computing, more specifically in superconducting quantum computing, flux qubits are micrometer sized loops of superconducting metal that is interrupted by a number of Josephson junctions. These devices function as quantum bits. The flux qubit was first proposed by Terry P. Orlando et al. at MIT in 1999 and fabricated shortly thereafter. During fabrication, the Josephson junction parameters are engineered so that a persistent current will flow continuously when an external magnetic flux is applied. Only an integer number of flux quanta are allowed to penetrate the superconducting ring, resulting in clockwise or counter-clockwise mesoscopic supercurrents in the loop to compensate a non-integer external flux bias. When the applied flux through the loop area is close to a half integer number of flux quanta, the two lowest energy eigenstates of the loop will be a quantum superposition of the clockwise and counter-clockwise currents.The two lowest energy eigenstates differ only by the relative quantum phase between the composing current-direction states. Higher energy eigenstates correspond to much larger (macroscopic) persistent currents, that induce an additional flux quantum to the qubit loop, thus are well separated energetically from the lowest two eigenstates. This separation, known as the "qubit non linearity" criteria, allows operations with the two lowest eigenstates only, effectively creating a two level system. Usually, the two lowest eigenstates will serve as the computational basis for the logical qubit.

A Josephson junction is a quantum mechanical device which is made of two superconducting electrodes separated by a barrier. A π Josephson junction is a Josephson junction in which the Josephson phase φ equals π in the ground state, i.e. when no external current or magnetic field is applied.

<span class="mw-page-title-main">Proximity effect (superconductivity)</span> Phenomena that occur when a superconductor is in contact with a non-superconductor

Proximity effect or Holm–Meissner effect is a term used in the field of superconductivity to describe phenomena that occur when a superconductor (S) is placed in contact with a "normal" (N) non-superconductor. Typically the critical temperature of the superconductor is suppressed and signs of weak superconductivity are observed in the normal material over mesoscopic distances. The proximity effect is known since the pioneering work by R. Holm and W. Meissner. They have observed zero resistance in SNS pressed contacts, in which two superconducting metals are separated by a thin film of a non-superconducting metal. The discovery of the supercurrent in SNS contacts is sometimes mistakenly attributed to Brian Josephson's 1962 work, yet the effect was known long before his publication and was understood as the proximity effect.

<span class="mw-page-title-main">Scanning SQUID microscopy</span>

Scanning SQUID microscopy is a technique where a superconducting quantum interference device (SQUID) is used to image surface magnetic field strength with micrometre scale resolution. A tiny SQUID is mounted onto a tip which is then rastered near the surface of the sample to be measured. As the SQUID is the most sensitive detector of magnetic fields available and can be constructed at submicrometre widths via lithography, the scanning SQUID microscope allows magnetic fields to be measured with unparalleled resolution and sensitivity. The first scanning SQUID microscope was built in 1992 by Black et al. Since then the technique has been used to confirm unconventional superconductivity in several high-temperature superconductors including YBCO and BSCCO compounds.

In quantum computing, and more specifically in superconducting quantum computing, the phase qubit is a superconducting device based on the superconductor–insulator–superconductor (SIS) Josephson junction, designed to operate as a quantum bit, or qubit.

In electronics, leakage is the gradual transfer of electrical energy across a boundary normally viewed as insulating, such as the spontaneous discharge of a charged capacitor, magnetic coupling of a transformer with other components, or flow of current across a transistor in the "off" state or a reverse-polarized diode.

The superconducting tunnel junction (STJ) — also known as a superconductor–insulator–superconductor tunnel junction (SIS) — is an electronic device consisting of two superconductors separated by a very thin layer of insulating material. Current passes through the junction via the process of quantum tunneling. The STJ is a type of Josephson junction, though not all the properties of the STJ are described by the Josephson effect.

<span class="mw-page-title-main">Field-effect transistor</span> Type of transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.

Metal-insulator-metal (MIM) diode is a type of nonlinear device very similar to a semiconductor diode that is capable of very fast operation. Depending on the geometry and the material used for fabrication, the operation mechanisms are governed either by quantum tunnelling or thermal activation.

References

  1. Zhu, Jian-Gang (Jimmy); Park, Chando (2006). "Magnetic tunnel junctions". Materials Today. 9 (11): 36–45. doi: 10.1016/S1369-7021(06)71693-5 . ISSN   1369-7021.