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Exchange bias or exchange anisotropy occurs in bilayers (or multilayers) of magnetic materials where the hard magnetization behavior of an antiferromagnetic thin film causes a shift in the soft magnetization curve of a ferromagnetic film. The exchange bias phenomenon is of tremendous utility in magnetic recording, where it is used to pin the state of the readback heads of hard disk drives at exactly their point of maximum sensitivity; hence the term "bias."
The essential physics underlying the phenomenon is the exchange interaction between the antiferromagnet and ferromagnet at their interface. Since antiferromagnets have a small or no net magnetization, their spin orientation is only weakly influenced by an externally applied magnetic field. A soft ferromagnetic film which is strongly exchange-coupled to the antiferromagnet will have its interfacial spins pinned. Reversal of the ferromagnet's moment will have an added energetic cost corresponding to the energy necessary to create a Néel domain wall within the antiferromagnetic film. The added energy term implies a shift in the switching field of the ferromagnet. Thus the magnetization curve of an exchange-biased ferromagnetic film looks like that of the normal ferromagnet except that is shifted away from the H=0 axis by an amount Hb.
In most well-studied ferromagnet/antiferromagnet bilayers, the Curie temperature of the ferromagnet is larger than the Néel temperature TN of the antiferromagnet. This inequality means that the direction of the exchange bias can be set by cooling through TN in the presence of an applied magnetic field. The moment of the magnetically ordered ferromagnet will apply an effective field to the antiferromagnet as it orders, breaking the symmetry and influencing the formation of domains.
The exchange bias effect is attributed to a ferromagnetic unidirectional anisotropy formed at the interface between different magnetic phases. Generally, the process of field cooling from higher temperature is used to obtain ferromagnetic unidirectional anisotropy in different exchange bias systems. In 2011, a large exchange bias has been realized after zero-field cooling from an unmagnetized state, which was attributed to the newly formed interface between different magnetic phases during the initial magnetization process.
Exchange anisotropy has long been poorly understood due to the difficulty of studying the dynamics of domain walls in thin antiferromagnetic films. A naive approach to the problem would suggest the following expression for energy per unit area:
where n is the number of interfacial spins interactions per unit area, Jex is the exchange constant at the interface, S refers to the spin vector, M refers to the magnetization, t refers to film thickness and H is the external field. The subscript F describes the properties of the ferromagnet and AF to the antiferromagnet. The expression omits magnetocrystalline anisotropy, which is unaffected by the presence of the antiferromagnet. At the switching field of the ferromagnet, the pinning energy represented by the first term and the Zeeman dipole coupling represented by the second term will exactly balance. The equation then predicts that the exchange bias shift Hb will be given by the expression
Many experimental findings regarding the exchange bias contradict this simple model. For example, the magnitude of measured Hb values is typically 100 times less than that predicted by the equation for reasonable values of the parameters. The amount of hysteresis shift Hb is not correlated with the density n of uncompensated spins in the plane of the antiferromagnet that appears at the interface. In addition, the exchange bias effect tends to be smaller in epitaxial bilayers than in polycrystalline ones, suggesting an important role for defects. In recent years progress in fundamental understanding has been made via synchrotron radiation based element-specific magnetic linear dichroism experiments that can image antiferromagnetic domains and frequency-dependent magnetic susceptibility measurements that can probe the dynamics. Experiments on the Fe/FeF2 and Fe/MnF2 model systems have been particularly fruitful.
Exchange bias was initially used to stabilize the magnetization of soft ferromagnetic layers in readback heads based on the anisotropic magnetoresistance (AMR) effect. Without the stabilization, the magnetic domain state of the head could be unpredictable, leading to reliability problems. Currently, exchange bias is used to pin the harder reference layer in spin valve readback heads and MRAM memory circuits that utilize the giant magnetoresistance or magnetic tunneling effect. Similarly, the most advanced disk media are antiferromagnetically coupled, making use of interfacial exchange to effectively increase the stability of small magnetic particles whose behavior would otherwise be superparamagnetic.
Desirable properties for an exchange bias material include a high Néel temperature, a large magnetocrystalline anisotropy and good chemical and structural compatibility with NiFe and Co, the most important ferromagnetic films. The most technologically significant exchange bias materials have been the rocksalt-structure antiferromagnetic oxides like NiO, CoO and their alloys and the rocksalt-structure intermetallics like FeMn, NiMn, IrMn and their alloys.
Exchange anisotropy was discovered by Meiklejohn and Bean of General Electric in 1956. The first commercial device to employ the exchange bias was IBM's anisotropic magnetoresistance (AMR) disk drive recording head, which was based on a design by Hunt in the 1970s but which didn't fully displace the inductive readback head until the early 1990s. By the mid-1990s, the spin valve head using an exchange-bias layer was well on its way to displacing the AMR head.
Ferromagnetism is a property of certain materials that results in a significant, observable magnetic permeability, and in many cases, a significant magnetic coercivity, allowing the material to form a permanent magnet. Ferromagnetic materials are noticeably attracted to a magnet, which is a consequence of their substantial magnetic permeability.
Magnetoresistance is the tendency of a material to change the value of its electrical resistance in an externally-applied magnetic field. There are a variety of effects that can be called magnetoresistance. Some occur in bulk non-magnetic metals and semiconductors, such as geometrical magnetoresistance, Shubnikov–de Haas oscillations, or the common positive magnetoresistance in metals. Other effects occur in magnetic metals, such as negative magnetoresistance in ferromagnets or anisotropic magnetoresistance (AMR). Finally, in multicomponent or multilayer systems, giant magnetoresistance (GMR), tunnel magnetoresistance (TMR), colossal magnetoresistance (CMR), and extraordinary magnetoresistance (EMR) can be observed.
Spintronics, also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems; the analogous effects in insulators fall into the field of multiferroics.
In materials that exhibit antiferromagnetism, the magnetic moments of atoms or molecules, usually related to the spins of electrons, align in a regular pattern with neighboring spins pointing in opposite directions. This is, like ferromagnetism and ferrimagnetism, a manifestation of ordered magnetism. The phenomenon of antiferromagnetism was first introduced by Lev Landau in 1933.
A ferrimagnetic material is a material that has populations of atoms with opposing magnetic moments, as in antiferromagnetism, but these moments are unequal in magnitude, so a spontaneous magnetization remains. This can for example occur when the populations consist of different atoms or ions (such as Fe2+ and Fe3+).
Remanence or remanent magnetization or residual magnetism is the magnetization left behind in a ferromagnetic material after an external magnetic field is removed. Colloquially, when a magnet is "magnetized", it has remanence. The remanence of magnetic materials provides the magnetic memory in magnetic storage devices, and is used as a source of information on the past Earth's magnetic field in paleomagnetism. The word remanence is from remanent + -ence, meaning "that which remains". The origins of remanence originate from some point after 1850.
Coercivity, also called the magnetic coercivity, coercive field or coercive force, is a measure of the ability of a ferromagnetic material to withstand an external magnetic field without becoming demagnetized. Coercivity is usually measured in oersted or ampere/meter units and is denoted HC.
Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough, electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon, and lies in the study of spintronics.
Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in multilayers composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR, which also sets the foundation for the study of spintronics.
Peter Andreas Grünberg was a German physicist, and Nobel Prize in Physics laureate for his discovery with Albert Fert of giant magnetoresistance which brought about a breakthrough in gigabyte hard disk drives.
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Spin-polarized scanning tunneling microscopy (SP-STM) is a type of scanning tunneling microscope (STM) that can provide detailed information of magnetic phenomena on the single-atom scale additional to the atomic topography gained with STM. SP-STM opened a novel approach to static and dynamic magnetic processes as precise investigations of domain walls in ferromagnetic and antiferromagnetic systems, as well as thermal and current-induced switching of nanomagnetic particles.
Gallium manganese arsenide, chemical formula (Ga,Mn)As is a magnetic semiconductor. It is based on the world's second most commonly used semiconductor, gallium arsenide,, and readily compatible with existing semiconductor technologies. Differently from other dilute magnetic semiconductors, such as the majority of those based on II-VI semiconductors, it is not paramagnetic but ferromagnetic, and hence exhibits hysteretic magnetization behavior. This memory effect is of importance for the creation of persistent devices. In (Ga,Mn)As, the manganese atoms provide a magnetic moment, and each also acts as an acceptor, making it a p-type material. The presence of carriers allows the material to be used for spin-polarized currents. In contrast, many other ferromagnetic magnetic semiconductors are strongly insulating and so do not possess free carriers. (Ga,Mn)As is therefore a candidate material for spintronic devices but it is likely to remain only a testbed for basic research as its Curie temperature could only be raised up to approximately 200 K.
The term magnetic structure of a material pertains to the ordered arrangement of magnetic spins, typically within an ordered crystallographic lattice. Its study is a branch of solid-state physics.
In magnetism, a nanomagnet is a nanoscopic scale system that presents spontaneous magnetic order (magnetization) at zero applied magnetic field (remanence).
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Magnonics is an emerging field of modern magnetism, which can be considered a sub-field of modern solid state physics. Magnonics combines the study of waves and magnetism. Its main aim is to investigate the behaviour of spin waves in nano-structure elements. In essence, spin waves are a propagating re-ordering of the magnetisation in a material and arise from the precession of magnetic moments. Magnetic moments arise from the orbital and spin moments of the electron, most often it is this spin moment that contributes to the net magnetic moment.
Spinterface is a term coined to indicate an interface between a ferromagnet and an organic semiconductor. This is a widely investigated topic in molecular spintronics, since the role of interfaces plays a huge part in the functioning of a device. In particular, spinterfaces are widely studied in the scientific community because of their hybrid organic/inorganic composition. In fact, the hybridization between the metal and the organic material can be controlled by acting on the molecules, which are more responsive to electrical and optical stimuli than metals. This gives rise to the possibility of efficiently tuning the magnetic properties of the interface at the atomic scale.
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Bernard Dieny is a research scientist and an entrepreneur. He is Chief Scientist at SPINTEC, a CEA/CNRS/UGA research laboratory that he co-founded in 2002 in Grenoble, France. He is also co-founder of two startup companies: Crocus Technology on MRAM and magnetic sensors in 2006 and EVADERIS on circuits design in 2014.