The Hall effect is the production of a potential difference across an electrical conductor that is transverse to an electric current in the conductor and to an applied magnetic field perpendicular to the current. It was discovered by Edwin Hall in 1879.
Magnetoresistance is the tendency of a material to change the value of its electrical resistance in an externally-applied magnetic field. There are a variety of effects that can be called magnetoresistance. Some occur in bulk non-magnetic metals and semiconductors, such as geometrical magnetoresistance, Shubnikov–de Haas oscillations, or the common positive magnetoresistance in metals. Other effects occur in magnetic metals, such as negative magnetoresistance in ferromagnets or anisotropic magnetoresistance (AMR). Finally, in multicomponent or multilayer systems, giant magnetoresistance (GMR), tunnel magnetoresistance (TMR), colossal magnetoresistance (CMR), and extraordinary magnetoresistance (EMR) can be observed.
Spintronics, also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems; the analogous effects in insulators fall into the field of multiferroics.
A disk read-and-write head is the small part of a disk drive which moves above the disk platter and transforms the platter's magnetic field into electrical current or, vice versa, transforms electrical current into magnetic field. The heads have gone through a number of changes over the years.
Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough, electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon.
Colossal magnetoresistance (CMR) is a property of some materials, mostly manganese-based perovskite oxides, that enables them to dramatically change their electrical resistance in the presence of a magnetic field. The magnetoresistance of conventional materials enables changes in resistance of up to 5%, but materials featuring CMR may demonstrate resistance changes by orders of magnitude.
Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in multilayers composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR.
The piezoresistive effect is a change in the electrical resistivity of a semiconductor or metal when mechanical strain is applied. In contrast to the piezoelectric effect, the piezoresistive effect causes a change only in electrical resistance, not in electric potential.
A two-dimensional electron gas (2DEG) is a scientific model in solid-state physics. It is an electron gas that is free to move in two dimensions, but tightly confined in the third. This tight confinement leads to quantized energy levels for motion in the third direction, which can then be ignored for most problems. Thus the electrons appear to be a 2D sheet embedded in a 3D world. The analogous construct of holes is called a two-dimensional hole gas (2DHG), and such systems have many useful and interesting properties.
Tungsten(IV) telluride (WTe2) is an inorganic semimetallic chemical compound. In October 2014, tungsten ditelluride was discovered to exhibit an extremely large magnetoresistance: 13 million percent resistance increase in a magnetic field of 60 Tesla at 0.5 Kelvin. The resistance is proportional to the square of the magnetic field and shows no saturation. This may be due to the material being the first example of a compensated semimetal, in which the number of mobile holes is the same as the number of electrons. Tungsten ditelluride has layered structure, similar to many other transition metal dichalcogenides, but its layers are so distorted that the honeycomb lattice many of them have in common is in WTe2 hard to recognize. The tungsten atoms instead form zigzag chains, which are thought to behave as one-dimensional conductors. Unlike electrons in other two dimensional semiconductors, the electrons in WTe2 can easily move between the layers.
The spin Hall effect (SHE) is a transport phenomenon predicted by Russian physicists Mikhail I. Dyakonov and Vladimir I. Perel in 1971. It consists of the appearance of spin accumulation on the lateral surfaces of an electric current-carrying sample, the signs of the spin directions being opposite on the opposing boundaries. In a cylindrical wire, the current-induced surface spins will wind around the wire. When the current direction is reversed, the directions of spin orientation is also reversed.
Nanocomposite is a multiphase solid material where one of the phases has one, two or three dimensions of less than 100 nanometers (nm) or structures having nano-scale repeat distances between the different phases that make up the material.
Gallium manganese arsenide, chemical formula (Ga,Mn)As is a magnetic semiconductor. It is based on the world's second most commonly used semiconductor, gallium arsenide,, and readily compatible with existing semiconductor technologies. Differently from other dilute magnetic semiconductors, such as the majority of those based on II-VI semiconductors, it is not paramagnetic but ferromagnetic, and hence exhibits hysteretic magnetization behavior. This memory effect is of importance for the creation of persistent devices. In (Ga,Mn)As, the manganese atoms provide a magnetic moment, and each also acts as an acceptor, making it a p-type material. The presence of carriers allows the material to be used for spin-polarized currents. In contrast, many other ferromagnetic magnetic semiconductors are strongly insulating and so do not possess free carriers. (Ga,Mn)As is therefore a candidate as a spintronic material.
A tunable metamaterial is a metamaterial with a variable response to an incident electromagnetic wave. This includes remotely controlling how an incident electromagnetic wave interacts with a metamaterial. This translates into the capability to determine whether the EM wave is transmitted, reflected, or absorbed. In general, the lattice structure of the tunable metamaterial is adjustable in real time, making it possible to reconfigure a metamaterial device during operation. It encompasses developments beyond the bandwidth limitations in left-handed materials by constructing various types of metamaterials. The ongoing research in this domain includes electromagnetic materials that are very meta which mean good and has a band gap metamaterials (EBG), also known as photonic band gap (PBG), and negative refractive index material (NIM).
Samarium monochalcogenides are chemical compounds with the composition SmX, where Sm stands for the lanthanide element samarium and X denotes any one of three chalcogen elements, sulfur, selenium or tellurium, resulting in the compounds SmS, SmSe or SmTe. In these compounds, samarium formally exhibits oxidation state +2, whereas it usually assumes the +3 state, resulting in chalcogenides with the chemical formula Sm2X3.
A polariton laser is a novel type of laser source that exploits the coherent nature of Bose condensates of exciton-polaritons in semiconductors to achieve ultra-low threshold lasing.
Spin Hall magnetoresistance (SMR) is a transport phenomenon that is found in some electrical conductors that have at least one surface in direct contact with another magnetic material due to changes in the spin current that are present in metals and semiconductors with a large spin Hall angle. It is most easily detected when the magnetic material is an insulator which eliminates other magnetically sensitive transport effects arising from conduction in the magnetic material.
Spinterface is a term coined to indicate an interface between a ferromagnet and an organic semiconductor. This is a widely investigated topic in molecular spintronics, since the role of interfaces plays a huge part in the functioning of a device. In particular, spinterfaces are widely studied in the scientific community because of their hybrid organic/inorganic composition. In fact, the hybridization between the metal and the organic material can be controlled by acting on the molecules, which are more responsive to electrical and optical stimuli than metals. This gives rise to the possibility of efficiently tuning the magnetic properties of the interface at the atomic scale.
Geometric diodes, also known as morphological diodes, use the shape of their structure and ballistic / quasi-ballistic electron transport to create diode behavior. Geometric diodes differ from all other forms of diodes because they do not rely on a depletion region or a potential barrier to create their diode behavior. Instead of a potential barrier, an asymmetry in the geometry of the material creates an asymmetry in forward vs reverse bias current.
