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A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably. The requirement that each material be a semiconductor with unequal band gaps is somewhat loose, especially on small length scales, where electronic properties depend on spatial properties. A more modern definition of heterojunction is the interface between any two solid-state materials, including crystalline and amorphous structures of metallic, insulating, fast ion conductor and semiconducting materials.
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Aron Pinczuk was an Argentine-American experimental condensed matter physicist who was professor of physics and professor of applied physics at Columbia University. He was known for his work on correlated electronic states in two dimensional systems using photoluminescence and resonant inelastic light scattering methods. He was a fellow of the American Physical Society, the American Association for the Advancement of Science and the American Academy of Arts and Sciences.
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References
- ↑ "Frank F. Fang. Biography". Physics History Network. AIP.
- ↑ Fowler, AB; Fang, FF; Howard, WE; Stiles PJ (16 May 1966). "Magneto-Oscillatory Conductance in Silicon Surfaces". Physical Review Letters. 16 (20): 901–903. Bibcode:1966PhRvL..16..901F. doi:10.1103/PhysRevLett.16.901.
- ↑ IEEE Fellows Directory (Citation: For discovery and understanding of the two-dimensional properties of silicon inversion layers and for contributions to semiconductor device physics research.)
- ↑ Stern, Frank; Howard, WE (15 November 1967). "Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit". Physical Review. 163 (3): 816–835. Bibcode:1967PhRv..163..816S. doi:10.1103/PhysRev.163.816.
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