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Computer memory stores information, such as data and programs, for immediate use in the computer. The term memory is often synonymous with the terms RAM,main memory or primary storage. Archaic synonyms for main memory include core and store.
An integrated circuit (IC), also known as a microchip, computer chip, or simply chip, is a small electronic device made up of multiple interconnected electronic components such as transistors, resistors, and capacitors. These components are etched onto a small piece of semiconductor material, usually silicon. Integrated circuits are used in a wide range of electronic devices, including computers, smartphones, and televisions, to perform various functions such as processing and storing information. They have greatly impacted the field of electronics by enabling device miniaturization and enhanced functionality.
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips that are present in everyday electronic devices. It is a multiple-step photolithographic and physio-chemical process during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.
Moore's law is the observation that the number of transistors in an integrated circuit (IC) doubles about every two years. Moore's law is an observation and projection of a historical trend. Rather than a law of physics, it is an empirical relationship linked to gains from experience in production.
EEPROM or E2PROM (electrically erasable programmable read-only memory) is a type of non-volatile memory. It is used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or as a separate chip device, to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed.
Gordon Earle Moore was an American businessman, engineer, and the co-founder and emeritus chairman of Intel Corporation. He proposed Moore's law which makes the observation that the number of transistors in an integrated circuit (IC) doubles about every two years.
Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory uses floating-gate memory cells, which consist of a single floating-gate transistor per cell.
Simon Min Sze, or Shi Min, was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967.
Jun-ichi Nishizawa was a Japanese engineer and inventor. He is known for his electronic inventions since the 1950s, including the PIN diode, static induction transistor, static induction thyristor, SIT/SITh. His inventions contributed to the development of internet technology and the information age.
The transistor count is the number of transistors in an electronic device. It is the most common measure of integrated circuit complexity. The rate at which MOS transistor counts have increased generally follows Moore's law, which observes that transistor count doubles approximately every two years. However, being directly proportional to the area of a chip, transistor count does not represent how advanced the corresponding manufacturing technology is: a better indication of this is transistor density.
SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon", is a cross sectional structure of MOSFET (metal–oxide–semiconductor field-effect transistor), realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. This structure is often used for non-volatile memories, such as EEPROM and flash memories. It is sometimes used for TFT LCD displays. It is one of CTF (charge trap flash) variants. It is distinguished from traditional non-volatile memory structures by the use of silicon nitride (Si3N4 or Si9N10) instead of "polysilicon-based FG (floating-gate)" for the charge storage material. A further variant is "SHINOS" ("silicon"—"hi-k"—"nitride"—"oxide"—"silicon"), which is substituted top oxide layer with high-κ material. Another advanced variant is "MONOS" ("metal–oxide–nitride–oxide–silicon"). Companies offering SONOS-based products include Cypress Semiconductor, Macronix, Toshiba, United Microelectronics Corporation and Floadia.
James S. Harris is a scientist and engineer and fellow of IEEE, American Physical Society and Optical Society of America. His research primarily deals with optoelectronic devices and semiconductor material research.
Esther Marley Conwell was a pioneering American chemist and physicist, best known for the Conwell-Weisskopf theory that describes how electrons travel through semiconductors, a breakthrough that helped revolutionize modern computing. During her life, she was described as one of the most important women in science.
The IEEE Robert N. Noyce Medal is a science award presented by the IEEE for outstanding contributions to the microelectronics industry. It is given to individuals who have demonstrated contributions in multiple areas including technology development, business development, industry leadership, development of technology policy, and standards development. The medal is named in honour of Robert N. Noyce, the co-founder of Intel Corporation. He was also renowned for his 1959 invention of the integrated circuit. The medal is funded by Intel Corporation and was first awarded in 2000.
Random-access memory is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media, where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
Dawon Kahng was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET, along with his colleague Mohamed Atalla, in 1959. Kahng and Atalla developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment.
The IEEE International Electron Devices Meeting (IEDM) is an annual micro- and nanoelectronics conference held each December that serves as a forum for reporting technological breakthroughs in the areas of semiconductor and related device technologies, design, manufacturing, physics, modeling and circuit-device interaction.
Gurtej Singh Sandhu, also known as Gurtej Sandhu, is an inventor in the fields of thin-film processes and materials, VLSI and semiconductor device fabrication. He is recognized for being the all-time seventh most prolific inventor as measured by number of U.S. utility patents. Gurtej has 1382 U.S. utility patents as of October 19, 2021. He was Senior Fellow and Director of Advanced Technology Developments at Micron Technology, before becoming Senior Fellow and Vice President of Micron Technology.
Dr. Gary Patton is an American technologist and business executive. He is currently the Corporate Vice President and General Manager of Design Enablement and Components Research in the Technology Development Group at Intel. He has spent most of his career in IBM, starting in IBM's Research Division and holding management and executive positions in IBM's Microelectronics Division in Technology Development, Design Enablement, Manufacturing, and Business Line Management.
Sandip Tiwari is an Indian-born electrical engineer and applied physicist. He is the Charles N. Mellowes Professor of Engineering at Cornell University. His previous roles were Director of National Nanotechnology Users Network, Director of the National Nanotechnology Infrastructure Network, and research scientist at IBM T. J. Watson Research Center. He is best known for his pioneer research in the fields of SiGe transistor and nanocrystal memory.
References
- ↑ "2014 elevated fellow". IEEE Fellows Directory. Archived from the original on 2014-12-31. Retrieved 2017-04-12.
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