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A diode is a two-terminal electronic component that conducts current primarily in one direction ; it has low resistance in one direction, and high resistance in the other.
A rectifier is an electrical device that converts alternating current (AC), which periodically reverses direction, to direct current (DC), which flows in only one direction. The reverse operation is performed by an inverter.
A diode bridge is a bridge rectifier circuit of four diodes that is used in the process of converting alternating current (AC) from the input terminals to direct current on the output terminals. Its function is to convert the negative-going AC pulses into positive going pulses, after which a low-pass filter can be used to smooth the result into DC.
A thyristor is a solid-state semiconductor device with four layers of alternating P- and N-type materials used for high-power applications. It acts exclusively as a bistable switch, conducting when the gate receives a current trigger, and continuing to conduct until the voltage across the device is reverse-biased, or until the voltage is removed. There are two designs, differing in what triggers the conducting state. In a three-lead thyristor, a small current on its Gate lead controls the larger current of the Anode to Cathode path. In a two-lead thyristor, conduction begins when the potential difference between the Anode and Cathode themselves is sufficiently large.
A power inverter, inverter or invertor is a power electronic device or circuitry that changes direct current (DC) to alternating current (AC). The resulting AC frequency obtained depends on the particular device employed. Inverters do the opposite of rectifiers which were originally large electromechanical devices converting AC to DC.
The Schottky diode, also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.
In electronics, a varicap diode, varactor diode, variable capacitance diode, variable reactance diode or tuning diode is a type of diode designed to exploit the voltage-dependent capacitance of a reverse-biased p–n junction.
In electronics, an avalanche diode is a diode that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown. The avalanche breakdown is due to minority carriers accelerated enough to create ionization in the crystal lattice, producing more carriers, which in turn create more ionization. Because the avalanche breakdown is uniform across the whole junction, the breakdown voltage is nearly constant with changing current when compared to a non-avalanche diode.
A transient-voltage-suppression (TVS) diode, also transil or thyrector, is an electronic component used to protect electronics from voltage spikes induced on connected wires.
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell Laboratories in January 1958. The SCR was developed by a team of power engineers led by Gordon Hall and commercialized by Frank W. "Bill" Gutzwiller in 1957.
A voltage regulator is a system designed to automatically maintain a constant voltage. A voltage regulator may use a simple feed-forward design or may include negative feedback. It may use an electromechanical mechanism, or electronic components. Depending on the design, it may be used to regulate one or more AC or DC voltages.
A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics. Such a device is also called a power device or, when used in an integrated circuit, a power IC.
Power electronics is the application of electronics to the control and conversion of electric power.
A snubber is a device used to suppress a phenomenon such as voltage transients in electrical systems, pressure transients in fluid systems or excess force or rapid movement in mechanical systems.
The breakdown voltage of an insulator is the minimum voltage that causes a portion of an insulator to experience electrical breakdown and become electrically conductive.
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to a degree that the gate voltage needs to be higher than the voltage under control.
A clamper is an electronic circuit that fixes either the positive or the negative peak excursions of a signal to a defined voltage by adding a variable positive or negative DC voltage to it. The clamper does not restrict the peak-to-peak excursion of the signal (clipping); it moves the whole signal up or down so as to place its peaks at the reference level.
A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power semiconductor device. It was invented by General Electric. GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.
A QUADRAC is a special type of thyristor which combines a DIAC and a TRIAC in a single package. The DIAC is the triggering device for the TRIAC. Thyristors are four-layer (PNPN) semiconductor devices that act as switches, rectifiers or voltage regulators in a variety of applications. When triggered, thyristors turn on and become low-resistance current paths. They remain so even after the trigger is removed, and until the current is reduced to a certain level. Diacs are bi-directional diodes that switch AC voltages and trigger triacs or silicon-controlled rectifiers (SCRs). Except for a small leakage current, diacs do not conduct until the breakover voltage is reached. Triacs are three-terminal, silicon devices that function as two SCRs configured in an inverse, parallel arrangement. They provide load current during both halves of the AC supply voltage. By combining the functions of diacs and triacs, QUADRACs eliminate the need to buy and assemble discrete parts.
This glossary of power electronics is a list of definitions of terms and concepts related to power electronics in general and power electronic capacitors in particular. For more definitions in electric engineering, see Glossary of electrical and electronics engineering. For terms related to engineering in general, see Glossary of engineering.
References
- ↑ "What is PIV rating in a diode?" . Retrieved 2021-05-01.
- ↑ Biswanath Paul (2004). Industrial Electronics and Control. PHI Learning Pvt. Ltd. p. 11. ISBN 978-81-203-1811-3.
- ↑ Gordon McComb and Earl Boysen (2005). Electronics for dummies. For Dummies. p. 80. ISBN 9780764576607.
- ↑ A. P. Godse and U. A. Bakshi (2009). Electronic circuits. Technical Publications. pp. 7–9. ISBN 978-81-8431-533-2.
- ↑ Yaduvir Singh (2008). Semiconductor Devices. I. K. International Pvt Ltd. p. 172. ISBN 978-93-8002-612-1.
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