Double Data Rate Synchronous Dynamic Random-Access Memory is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) class of memory integrated circuits used in computers. DDR SDRAM, also retroactively called DDR1 SDRAM, has been superseded by DDR2 SDRAM, DDR3 SDRAM, DDR4 SDRAM and DDR5 SDRAM. None of its successors are forward or backward compatible with DDR1 SDRAM, meaning DDR2, DDR3, DDR4 and DDR5 memory modules will not work on DDR1-equipped motherboards, and vice versa.
Static random-access memory is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed.
Dynamic random-access memory is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory, since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.
Synchronous dynamic random-access memory is any DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal.
A DIMM, commonly called a RAM stick, comprises a series of dynamic random-access memory integrated circuits. These memory modules are mounted on a printed circuit board and designed for use in personal computers, workstations, printers, and servers. They are the predominant method for adding memory into a computer system. The vast majority of DIMMs are standardized through JEDEC standards, although there are proprietary DIMMs. DIMMs come in a variety of speeds and sizes, but generally are one of two lengths - PC which are 133.35 mm (5.25 in) and laptop (SO-DIMM) which are about half the size at 67.60 mm (2.66 in).
A SIMM is a type of memory module containing random-access memory used in computers from the early 1980s to the early 2000s. It differs from a dual in-line memory module (DIMM), the most predominant form of memory module since the late 1990s, in that the contacts on a SIMM are redundant on both sides of the module. SIMMs were standardised under the JEDEC JESD-21C standard.
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. Currently, memory technologies in use such as flash RAM and DRAM have practical advantages that have so far kept MRAM in a niche role in the market.
Mostek Corporation was a semiconductor integrated circuit manufacturer, founded in 1969 by L. J. Sevin, Louay E. Sharif, Richard L. Petritz and other ex-employees of Texas Instruments. At its peak in the late 1970s, Mostek held an 85% market share of the dynamic random-access memory (DRAM) memory chip market worldwide, until being eclipsed by lower-priced Japanese DRAM manufacturers who were accused of dumping memory on the market.
Oak Technology was an American supplier of semiconductor chips for sound cards, graphics cards and optical storage devices such as CD-ROM, CD-RW and DVD. It achieved success with optical storage chips and its stock price increased substantially around the time of the tech bubble in 2000. After falling on hard times, in 2003 it was acquired by Zoran Corporation.
Ferroelectric RAM is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. An FeRAM chip contains a thin film of ferroelectric material, often lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT layer change polarity in an electric field, thereby producing a power-efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption or magnetic interference, making FeRAM a reliable nonvolatile memory.
Double Data Rate 3 Synchronous Dynamic Random-Access Memory is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors.
Memory refresh is the process of periodically reading information from an area of computer memory and immediately rewriting the read information to the same area without modification, for the purpose of preserving the information. Memory refresh is a background maintenance process required during the operation of semiconductor dynamic random-access memory (DRAM), the most widely used type of computer memory, and in fact is the defining characteristic of this class of memory.
Zentrum Mikroelektronik Dresden (ZMD) was regarded as the heart of East Germany's microelectronics research in the 1980s as well as its most advanced integrated circuit manufacturer. Together with TU Dresden and VEB Spurenmetalle Freiberg, ZMD formed the foundation for Silicon Saxony, a cluster of microelectronics companies that came to include new fabs by Siemens and AMD.
The CVAX is a microprocessor chipset developed and fabricated by Digital Equipment Corporation (DEC) that implemented the VAX instruction set architecture (ISA). The chipset consisted of the CVAX 78034 CPU, CFPA floating-point accelerator, CVAX clock chip, and the associated support chips, the CVAX System Support Chip (CSSC), CVAX Memory Controller (CMCTL), and CVAX Q-Bus Interface Chip (CQBIC).
In semiconductor fabrication, the International Technology Roadmap for Semiconductors (ITRS) defines the 10 nm process as the MOSFET technology node following the 14 nm node. 10 nm class denotes chips made using process technologies between 10 and 20 nm.
Random-access memory is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media, where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
POWER8 is a family of superscalar multi-core microprocessors based on the Power ISA, announced in August 2013 at the Hot Chips conference. The designs are available for licensing under the OpenPOWER Foundation, which is the first time for such availability of IBM's highest-end processors.
Espresso is the codename of the 32-bit central processing unit (CPU) used in Nintendo's Wii U video game console. It was designed by IBM, and was produced using a 45 nm silicon-on-insulator process. The Espresso chip resides together with a GPU from AMD on an MCM manufactured by Renesas. It was revealed at E3 2011 in June 2011 and released in November 2012.
MoSys, Inc., originally Monolithic System Technology (MoST), was a fabless semiconductor design company founded in 1991. The company primarily designed memory chips and were especially known for their Multibank DRAM and 1T-SRAM technologies—the latter used on Nintendo's Wii and GameCube video game consoles.
U61000C chip
U61000D
Presentation of the first U61000 chip to Chairman Honecker (1988)
