Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.
An integrated circuit or monolithic integrated circuit is a set of electronic circuits on one small flat piece of semiconductor material that is normally silicon. The integration of large numbers of tiny transistors into a small chip results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete electronic components. The IC's mass production capability, reliability, and building-block approach to circuit design has ensured the rapid adoption of standardized ICs in place of designs using discrete transistors. ICs are now used in virtually all electronic equipment and have revolutionized the world of electronics. Computers, mobile phones, and other digital home appliances are now inextricable parts of the structure of modern societies, made possible by the small size and low cost of ICs.
A light-emitting diode (LED) is a semiconductor light source that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. This effect is called electroluminescence. The color of the light is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device.
Semiconductor device fabrication is the process used to create the integrated circuits that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photolithographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.
The metal–oxide–semiconductor field-effect transistor also known as insulated-gate field-effect transistor (IGFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor or MISFET is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor.
Complementary metal–oxide–semiconductor (CMOS) is a technology for constructing integrated circuits, and is a form of MOSFET semiconductor. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors, data converters, and highly integrated transceivers for many types of communication. CMOS was invented by Chih-Tang Sah and Frank Wanlass at Fairchild Semiconductor in 1963, and is used in most modern LSI and VLSI devices.
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.
Fused quartz or fused silica is glass consisting of silica in amorphous (non-crystalline) form. It differs from traditional glasses in containing no other ingredients, which are typically added to glass to lower the melt temperature. Fused silica, therefore, has high working and melting temperatures. Although the terms fused quartz and fused silica are used interchangeably, the optical and thermal properties of fused silica are superior to those of fused quartz and other types of glass due to its purity. For these reasons, it finds use in situations such as semiconductor fabrication and laboratory equipment. It transmits ultraviolet better than other glasses, so is used to make lenses and optics for the ultraviolet spectrum. The low coefficient of thermal expansion of fused quartz makes it a useful material for precision mirror substrates.
Silicon on insulator (SOI) technology refers to the use of a layered silicon–insulator–silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic capacitance within the device, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire. The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application.
An antifuse is an electrical device that performs the opposite function to a fuse. Whereas a fuse starts with a low resistance and is designed to permanently break an electrically conductive path, an antifuse starts with a high resistance and is designed to permanently create an electrically conductive path. This technology has many applications.
In semiconductor manufacturing, a low-κ is a material with a small relative dielectric constant relative to silicon dioxide. Although the proper symbol for the relative dielectric constant is the Greek letter κ (kappa), in conversation such materials are referred to as being "low-k" (low-kay) rather than "low-κ" (low-kappa). Low-κ dielectric material implementation is one of several strategies used to allow continued scaling of microelectronic devices, colloquially referred to as extending Moore's law. In digital circuits, insulating dielectrics separate the conducting parts from one another. As components have scaled and transistors have gotten closer together, the insulating dielectrics have thinned to the point where charge build up and crosstalk adversely affect the performance of the device. Replacing the silicon dioxide with a low-κ dielectric of the same thickness reduces parasitic capacitance, enabling faster switching speeds and lower heat dissipation.
Aluminium nitride (AlN) is a nitride of aluminium. It has high thermal conductivity of up to 285 W/(m·K), and is electrically insulating with electrical conductivity of 10−11 to 10−13 Ω−1 cm−1.
In semiconductor fabrication, a resist is a thin layer used to transfer a circuit pattern to the semiconductor substrate which it is deposited upon. A resist can be patterned via lithography to form a (sub)micrometer-scale, temporary mask that protects selected areas of the underlying substrate during subsequent processing steps. The material used to prepare said thin layer is typically a viscous solution. Resists are generally proprietary mixtures of a polymer or its precursor and other small molecules that have been specially formulated for a given lithography technology. Resists used during photolithography are called photoresists.
The term high-κ dielectric refers to a material with a high dielectric constant κ. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law.
Fluorosilicate glass (FSG) is a glass material composed primarily of fluorine, silicon and oxygen. It has a number of uses in industry and manufacturing, especially in semiconductor fabrication where it forms an insulating dielectric. The related fluorosilicate glass-ceramics have good mechanical and chemical properties.
Lam Research Corporation is an American corporation that engages in the design, manufacture, marketing, and service of semiconductor processing equipment used in the fabrication of integrated circuits. Its products are used primarily in front-end wafer processing, which involves the steps that create the active components of semiconductor devices and their wiring (interconnects). The company also builds equipment for back-end wafer-level packaging (WLP), and for related manufacturing markets such as for microelectromechanical systems (MEMS).
Thermally stimulated current (TSC) spectroscopy is an experimental technique which is used to study energy levels in semiconductors or insulators. Energy levels are first filled either by optical or electrical injection usually at a relatively low temperature, subsequently electrons or holes are emitted by heating to a higher temperature. A curve of emitted current will be recorded and plotted against temperature, resulting in a TSC spectrum. By analyzing TSC spectra, information can be obtained regarding energy levels in semiconductors or insulators.
A semiconductor package is a metal, plastic, glass, or ceramic casing containing one or more discrete semiconductor devices or integrated circuits. Individual components are fabricated on semiconductor wafers before being diced into die, tested, and packaged. The package provides a means for connecting the package to the external environment, such as printed circuit board, via leads such as lands, balls, or pins; and protection against threats such as mechanical impact, chemical contamination, and light exposure. Additionally, it helps dissipate heat produced by the device, with or without the aid of a heat spreader. There are thousands of package types in use. Some are defined by international, national, or industry standards, while others are particular to an individual manufacturer.
Surface activated bonding (SAB) is a low temperature wafer bonding technology with atomically clean and activated surfaces. Surface activation prior to bonding by using fast atom bombardment is typically employed to clean the surfaces. High strength bonding of semiconductor, metal, and dielectric can be obtained even at room temperature.
In light-emitting diode physics, the recombination of electrons and electron holes in a semiconductor produce light, a process called "electroluminescence". The wavelength of the light produced depends on the energy band gap of the semiconductors used. Since these materials have a high index of refraction, design features of the devices such as special optical coatings and die shape are required to efficiently emit light. An LED is a long-lived light source, but certain mechanisms can cause slow loss of efficiency of the device or sudden failure. The wavelength of the light emitted is a function of the band gap of the semiconductor material used; materials such as gallium arsenide, and others, with various trace doping elements, are used to produce different colors of light. Another type of LED uses a quantum dot which can have its properties and wavelength adjusted by its size. Light-emitting diodes are widely used in indicator and display functions, and white LEDs are displacing other technologies for general illumination purposes.
