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Boron nitride is a thermally and chemically resistant refractory compound of boron and nitrogen with the chemical formula BN. It exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form corresponding to graphite is the most stable and soft among BN polymorphs, and is therefore used as a lubricant and an additive to cosmetic products. The cubic variety analogous to diamond is called c-BN; it is softer than diamond, but its thermal and chemical stability is superior. The rare wurtzite BN modification is similar to lonsdaleite but slightly softer than the cubic form.
Boron is a chemical element; it has symbol B and atomic number 5. In its crystalline form it is a brittle, dark, lustrous metalloid; in its amorphous form it is a brown powder. As the lightest element of the boron group it has three valence electrons for forming covalent bonds, resulting in many compounds such as boric acid, the mineral sodium borate, and the ultra-hard crystals of boron carbide and boron nitride.
Erbium is a chemical element; it has symbol Er and atomic number 68. A silvery-white solid metal when artificially isolated, natural erbium is always found in chemical combination with other elements. It is a lanthanide, a rare-earth element, originally found in the gadolinite mine in Ytterby, Sweden, which is the source of the element's name.
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single-domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlattice structures.
Gallium nitride is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate that makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency doubling.
Aluminium nitride (AlN) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.
Erbium(III) chloride is a violet solid with the formula ErCl3. It is used in the preparation of erbium metal.
Silicon nitride is a chemical compound of the elements silicon and nitrogen. Si
3N
4 is the most thermodynamically stable and commercially important of the silicon nitrides, and the term ″Silicon nitride″ commonly refers to this specific composition. It is a white, high-melting-point solid that is relatively chemically inert, being attacked by dilute HF and hot H
3PO
4. It is very hard. It has a high thermal stability with strong optical nonlinearities for all-optical applications.
Polythiazyl, (SN)x, is an electrically conductive, gold- or bronze-colored polymer with metallic luster. It was the first conductive inorganic polymer discovered and was also found to be a superconductor at very low temperatures. It is a fibrous solid, described as "lustrous golden on the faces and dark blue-black", depending on the orientation of the sample. It is air stable and insoluble in all solvents.
Zinc nitride (Zn3N2) is an inorganic compound of zinc and nitrogen, usually obtained as (blue)grey crystals. It is a semiconductor. In pure form, it has the anti-bixbyite structure.
Erbium hexaboride (ErB6) is a rare-earth hexaboride compound containing the element erbium, which has a calcium hexaboride crystal structure.
Gallium nitride nanotubes (GaNNTs) are nanotubes of gallium nitride. They can be grown by chemical vapour deposition.
Yttrium oxalate is an inorganic compound, a salt of yttrium and oxalic acid with the chemical formula Y2(C2O4)3. The compound does not dissolve in water and forms crystalline hydrates—colorless crystals.
Tellurogallates are chemical compounds which contain anionic units of tellurium connected to gallium. They can be considered as gallates where tellurium substitutes for oxygen. Similar compounds include the thiogallates, selenogallates, telluroaluminates, telluroindates and thiostannates. They are in the category of chalcogenotrielates or more broadly tellurometallates or chalcogenometallates.
Erbium(III) acetate is the acetate salt of erbium, with the proposed chemical formula of Er(CH3COO)3. It can be used to synthesize some optical materials.
Erbium compounds are compounds containing the element erbium (Er). These compounds are usually dominated by erbium in the +3 oxidation state, although the +2, +1 and 0 oxidation states have also been reported.
Ytterbium(III) nitride is a binary inorganic compound of ytterbium and nitrogen with the chemical formula YbN.
Cerium nitride is a binary inorganic compound of cerium and nitrogen with the chemical formula CeN.
Gadolinium(III) nitride is a binary inorganic compound of gadolinium and nitrogen with the chemical formula GdN.
Lanthanum nitride is a binary inorganic compound of lanthanum and nitride with the chemical formula LaN.
References
- ↑ "Erbium Nitride". American Elements . Retrieved 30 January 2024.
- ↑ "Erbium Nitride Powder, ErN, CAS 12020-21-2 - Heeger Materials". Heeger Materials. Retrieved 30 January 2024.
- ↑ Al Atabi, Hayder A.; Al Auda, Zahraa F.; Padavala, B.; Craig, M.; Hohn, K.; Edgar, James H. (5 July 2018). "Sublimation Growth and Characterization of Erbium Nitride Crystals". Crystal Growth & Design . 18 (7): 3762–3766. doi:10.1021/acs.cgd.7b01543.
- ↑ McKay, M. A.; Wang, Q. W.; Al-Atabi, H. A.; Yan, Y. Q.; Li, J.; Edgar, J. H.; Lin, J. Y.; Jiang, H. X. (27 April 2020). "Band structure and infrared optical transitions in ErN". Applied Physics Letters . 116 (17). doi: 10.1063/5.0006312 . Retrieved 30 January 2024.
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