A transistor is a semiconductor device used to amplify or switch electrical signals and power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits.
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching.
A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction that acts exclusively as an electrically controlled switch.
A TRIAC is a three terminal electronic component that conducts current in either direction when triggered. The term TRIAC is a genericised trademark.
The CK722 was the first low-cost junction transistor available to the general public. It was a PNP germanium small-signal unit. Developed by Norman Krim, it was introduced by Raytheon in early 1953 for $7.60 each; the price was reduced to $3.50 in late 1954 and to $0.99 in 1956. Norm Krim selected Radio Shack to sell the CK721 and CK722 through their catalog. Krim had a long-standing personal and business relationship with Radio Shack. The CK722s were selected "fall out" from the Raytheon's premium-priced CK721. Raytheon actively encouraged hobbyists with design contests and advertisements.
The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. Its numbering follows the JEDEC standard. It is a transistor type of enduring popularity.
Texas Instruments Power, known more popularly by its acronym TIP, is a series of bipolar junction transistors manufactured by Texas Instruments. The series was introduced in the 1960s, and still sees some use today due to their simplicity, their durability, and their ease of use. A Texas Instruments catalog in 1966 lists the TIP04 and TIP14 part numbers.
In electronics, TO-3 is a designation for a standardized metal semiconductor package used for power semiconductors, including transistors, silicon controlled rectifiers, and, integrated circuits. TO stands for "Transistor Outline" and relates to a series of technical drawings produced by JEDEC.
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in the mid-1960s.
The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. It was originally made in the TO-18 metal can as shown in the picture.
The 2N2907 is a commonly available PNP bipolar junction transistor used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. This transistor was made by several manufacturers; Texas Instruments released a data sheet for their version of this part dated March 1973. An "A" suffix indicates a slightly higher breakdown voltage. These transistors have an enduring popularity with electronics hobbyists.
The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. Both types were registered by Motorola Semiconductor in the mid-1960s.
An extrinsic semiconductor is one that has been doped; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an intrinsic semiconductor. In an extrinsic semiconductor it is these foreign dopant atoms in the crystal lattice that mainly provide the charge carriers which carry electric current through the crystal. The doping agents used are of two types, resulting in two types of extrinsic semiconductor. An electron donor dopant is an atom which, when incorporated in the crystal, releases a mobile conduction electron into the crystal lattice. An extrinsic semiconductor which has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An electron acceptor dopant is an atom which accepts an electron from the lattice, creating a vacancy where an electron should be called a hole which can move through the crystal like a positively charged particle. An extrinsic semiconductor which has been doped with electron acceptor atoms is called a p-type semiconductor, because the majority of charge carriers in the crystal are positive holes.
The germanium alloy-junction transistor, or alloy transistor, was an early type of bipolar junction transistor, developed at General Electric and RCA in 1951 as an improvement over the earlier grown-junction transistor.
A diffused junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than the alloy junction and grown junction processes for making bipolar junction transistors (BJTs).
The grown-junction transistor was the first type of bipolar junction transistor made. It was invented by William Shockley at Bell Labs on June 23, 1948, six months after the first bipolar point-contact transistor. The first germanium prototypes were made in 1949. Bell Labs announced Shockley’s grown-junction transistor on July 4, 1951.
A transistor is a semiconductor device with at least three terminals for connection to an electric circuit. In the common case, the third terminal controls the flow of current between the other two terminals. This can be used for amplification, as in the case of a radio receiver, or for rapid switching, as in the case of digital circuits. The transistor replaced the vacuum-tube triode, also called a (thermionic) valve, which was much larger in size and used significantly more power to operate.The first transistor was successfully demonstrated on December 23, 1947, at Bell Laboratories in Murray Hill, New Jersey. Bell Labs was the research arm of American Telephone and Telegraph (AT&T). The three individuals credited with the invention of the transistor were William Shockley, John Bardeen and Walter Brattain. The introduction of the transistor is often considered one of the most important inventions in history.
The BC548 is a general-purpose NPN bipolar junction transistor commonly used in European and American electronic equipment. It is notably often the first type of bipolar transistor hobbyists encounter and is often featured in designs in hobby electronics magazines where a general-purpose transistor is required. The BC548 is low in cost and widely available.
Norman B. Krim (1913–2011) was an American electronics engineer and engineering executive. His drive to create a transistor product for the electronics experimenter-hobbyist market contributed to paving the path for a generation of American electronics engineers and technicians during the Space Race between the United States and the Soviet Union.
The KT315 is a Soviet silicon NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications, enclosed in the plastic KT-13 package. It was widely used in Soviet electronic equipment. The KT361 is a complementary (PNP) for the KT315 transistor, so it was often paired with it in push-pull stages.
