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Electronics is a scientific and engineering discipline that studies and applies the principles of physics to design, create, and operate devices that manipulate electrons and other electrically charged particles. Electronics is a subfield of electrical engineering, but it differs from it in that it focuses on using active devices such as transistors, diodes, and integrated circuits to control and amplify the flow of electric current and to convert it from one form to another, such as from alternating current (AC) to direct current (DC) or from analog signals to digital signals. Electronics also encompasses the fields of microelectronics, nanoelectronics, optoelectronics, and quantum electronics, which deal with the fabrication and application of electronic devices at microscopic, nanoscopic, optical, and quantum scales.
A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits. Because transistors are the key active components in practically all modern electronics, many people consider them one of the 20th century's greatest inventions.
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double or even multi gate structure. These devices have been given the generic name "FinFETs" because the source/drain region forms fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than planar CMOS technology.
Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires or advanced molecular electronics.
A gate dielectric is a dielectric used between the gate and substrate of a field-effect transistor. In state-of-the-art processes, the gate dielectric is subject to many constraints, including:
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET and the GAAFET, which are non-planar transistors, or 3D transistors.
Nanocircuits are electrical circuits operating on the nanometer scale. This is well into the quantum realm, where quantum mechanical effects become very important. One nanometer is equal to 10−9 meters or a row of 10 hydrogen atoms. With such progressively smaller circuits, more can be fitted on a computer chip. This allows faster and more complex functions using less power. Nanocircuits are composed of three different fundamental components. These are transistors, interconnections, and architecture, all fabricated on the nanometer scale.
Naoki Yokoyama is a Japanese electrical engineer, active in the fields of nanotechnology and electronic and photonic devices, best known for his success in fabricating hot-electron transistors and invention of resonant-tunneling transistors.
A carbon nanotube field-effect transistor (CNTFET) is a field-effect transistor that utilizes a single carbon nanotube (CNT) or an array of carbon nanotubes as the channel material, instead of bulk silicon, as in the traditional MOSFET structure. There have been major developments since CNTFETs were first demonstrated in 1998.
Single-walled carbon nanotubes in the fields of quantum mechanics and nanoelectronics, have the ability to conduct electricity. This conduction can be ballistic, diffusive, or based on scattering. When ballistic in nature conductance can be treated as if the electrons experience no scattering.
Gerhard Klimeck is a German-American scientist and author in the field of nanotechnology. He is a professor of Electrical and Computer Engineering at Purdue University School of Electrical and Computer Engineering.
Dawon Kahng was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET, along with his colleague Mohamed Atalla, in 1959. Kahng and Atalla developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment.
The IEEE International Electron Devices Meeting (IEDM) is an annual micro- and nanoelectronics conference held each December that serves as a forum for reporting technological breakthroughs in the areas of semiconductor and related device technologies, design, manufacturing, physics, modeling and circuit-device interaction.
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.
Beyond CMOS refers to the possible future digital logic technologies beyond the scaling limits of CMOS technology. which limits device density and speeds due to heating effects.
Sanjay Banerjee is an American engineer at the University of Texas at Austin, director of Microelectronics Research Center, and director of the Southwest Academy of Nanoelectronics (SWAN) — one of three such centers in the United States funded by the Semiconductor Research Corporation to develop a replacement for MOSFETs as part of their Nanoelectronics Research Initiative (NRI).
Kaustav Banerjee is a professor of electrical and computer engineering and director of the Nanoelectronics Research Laboratory at the University of California, Santa Barbara. He obtained Ph.D. degree in electrical engineering and computer sciences from the University of California. He was named Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2012 "for contributions to modeling and design of nanoscale integrated circuit interconnects." One of Banerjee's notable doctoral student is Deblina Sarkar, who later joined the faculty of Massachusetts Institute of Technology. The journal Nature Nanotechnology recognised their paper on tunnel field-effect transistor (TFET)-based biosensor published in Applied Physics Letters in as one of the highlight papers in 2012.
Dr. Gary Patton is an American technologist and business executive. He is currently the Corporate Vice President and General Manager of Design Enablement and Components Research in the Technology Development Group at Intel. He has spent most of his career in IBM, starting in IBM's Research Division and holding management and executive positions in IBM's Microelectronics Division in Technology Development, Design Enablement, Manufacturing, and Business Line Management.
Tsu-Jae King Liu is an American academic and engineer who serves as the Dean and the Roy W. Carlson Professor of Engineering at the UC Berkeley College of Engineering.
Deblina Sarkar is an electrical engineer, and inventor. She is an assistant professor at the Massachusetts Institute of Technology (MIT) and the AT&T Career Development Chair Professor of the MIT Media Lab. Sarkar has been internationally recognized for her invention of an ultra thin quantum mechanical transistor that can be scaled to nano-sizes and used in nanoelectronic biosensors. As the principal investigator of the Nano Cybernetic Biotrek Lab at MIT, Sarkar leads a multidisciplinary team of researchers towards bridging the gap between nanotechnology and synthetic biology to build new nano-devices and life-machine interfacing technologies with which to probe and enhance biological function.
References
- 1 2 3 4 "Mihai Adrian Ionescu". EPFL. Retrieved 19 December 2023.
- ↑ "Adrian Ionescu". IEEE Fellow Directory. Retrieved 18 December 2023.
- ↑ "Adrian M. Ionescu: H-index & Awards" . Retrieved 18 December 2023.
- ↑ "About Us". Xsensio. Archived from the original on 20 November 2023. Retrieved 19 December 2023.
- ↑ "IEEE Awards". IEEE Awards. 21 February 2024. Retrieved 20 March 2024.
- ↑ "George E. Smith". IEEE Electron Devices Society. Retrieved 19 December 2023.
- ↑ "2013 Faculty Awards recipients" (PDF). IBM. 16 September 2013. Retrieved 19 December 2023.
- ↑ "Prof. Adrian Ionescu receives the André Blondel Medal 2009". EPFL. 18 November 2009. Retrieved 19 December 2023.
