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Computer data storage is a technology consisting of computer components and recording media that are used to retain digital data. It is a core function and fundamental component of computers.
In computing, memory refers to a device that is used to store information for immediate use in a computer or related computer hardware device. It typically refers to semiconductor memory, specifically metal–oxide–semiconductor (MOS) memory, where data is stored within MOS memory cells on a silicon integrated circuit chip. The term "memory" is often synonymous with the term "primary storage". Computer memory operates at a high speed, for example random-access memory (RAM), as a distinction from storage that provides slow-to-access information but offers higher capacities. If needed, contents of the computer memory can be transferred to secondary storage; a very common way of doing this is through a memory management technique called virtual memory. An archaic synonym for memory is store.
A hard disk drive (HDD), hard disk, hard drive, or fixed disk is an electro-mechanical data storage device that stores and retrieves digital data using magnetic storage and one or more rigid rapidly rotating platters coated with magnetic material. The platters are paired with magnetic heads, usually arranged on a moving actuator arm, which read and write data to the platter surfaces. Data is accessed in a random-access manner, meaning that individual blocks of data can be stored and retrieved in any order. HDDs are a type of non-volatile storage, retaining stored data even when powered off.
In telecommunication and data storage, Manchester code is a line code in which the encoding of each data bit is either low then high, or high then low, for equal time. It is a self-clocking signal with no DC component. Consequently, electrical connections using a Manchester code are easily galvanically isolated.
In telecommunication, a non-return-to-zero (NRZ) line code is a binary code in which ones are represented by one significant condition, usually a positive voltage, while zeros are represented by some other significant condition, usually a negative voltage, with no other neutral or rest condition. The pulses in NRZ have more energy than a return-to-zero (RZ) code, which also has an additional rest state beside the conditions for ones and zeros. NRZ is not inherently a self-clocking signal, so some additional synchronization technique must be used for avoiding bit slips; examples of such techniques are a run-length-limited constraint and a parallel synchronization signal.
Static random-access memory is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed.
Dynamic random-access memory (DRAM) is a type of random access semiconductor memory that stores each bit of data in a memory cell consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. The capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors slowly leaks off, so without intervention the data on the chip would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory, since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.
Magnetic-core memory was the predominant form of random-access computer memory for 20 years between about 1955 and 1975. Such memory is often just called core memory, or, informally, core.
Run-length limited or RLL coding is a line coding technique that is used to send arbitrary data over a communications channel with bandwidth limits. RLL codes are defined by four main parameters: m, n, d, k. The first two, m/n, refer to the rate of the code, while the remaining two specify the minimal d and maximal k number of zeroes between consecutive ones. This is used in both telecommunication and storage systems that move a medium past a fixed recording head.
Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retrieve stored information even after having been power cycled. In contrast, volatile memory needs constant power in order to retain data. Examples of non-volatile memory include flash memory, read-only memory (ROM), ferroelectric RAM, most types of magnetic computer storage devices, optical discs, and early computer storage methods such as paper tape and punched cards.
Magnetic storage or magnetic recording is the storage of data on a magnetized medium. Magnetic storage uses different patterns of magnetisation in a magnetizable material to store data and is a form of non-volatile memory. The information is accessed using one or more read/write heads.
Areal density is a measure of the quantity of information bits that can be stored on a given length of track, area of surface, or in a given volume of a computer storage medium. Generally, higher density is more desirable, for it allows more data to be stored in the same physical space. Density therefore has a direct relationship to storage capacity of a given medium. Density also generally affects the performance within a particular medium, as well as price.
Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to MOS memory, where data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several MOS transistors per memory cell, and dynamic RAM (DRAM), which uses a single MOS transistor and MOS capacitor per cell. Non-volatile memory uses floating-gate memory cells, which consist of a single floating-gate MOS transistor per cell.
Millipede memory is a form of non-volatile computer memory. It promised a data density of more than 1 terabit per square inch, which is about the limit of the perpendicular recording hard drives. Millipede storage technology was pursued as a potential replacement for magnetic recording in hard drives and a means of reducing the physical size of the technology to that of flash media.
Ferroelectric RAM is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory.
Racetrack memory or domain-wall memory (DWM) is an experimental non-volatile memory device under development at IBM's Almaden Research Center by a team led by physicist Stuart Parkin. In early 2008, a 3-bit version was successfully demonstrated. If it were to be developed successfully, racetrack would offer storage density higher than comparable solid-state memory devices like flash memory and similar to conventional disk drives, with higher read/write performance.
Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing software that is rarely changed during the life of the system, also known as firmware. Software applications for programmable devices can be distributed as plug-in cartridges containing read-only memory.
Random-access memory is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory. In contrast, with other direct-access data storage media such as hard disks, CD-RWs, DVD-RWs and the older magnetic tapes and drum memory, the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 and reset to store a logic 0. Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.
The DATAmatic 1000 is an obsolete computer system from Honeywell introduced in 1957. It uses vacuum tubes and crystal diodes for logic, and featured a unique magnetic tape format for storage.
References
- Software Preservation Society glossary entry for bit cell
- Hitachi research page on patterned magnetic media
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