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John Bardeen was an American physicist and electrical engineer. He is the only person to be awarded the Nobel Prize in Physics twice: first in 1956 with William Shockley and Walter Brattain for the invention of the transistor; and again in 1972 with Leon N. Cooper and John Robert Schrieffer for a fundamental theory of conventional superconductivity known as the BCS theory.
A semiconductor is a material that has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity generally falls as its temperature rises; metals behave in the opposite way. In many cases their conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits.
A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits. Because transistors are the key active components in practically all modern electronics, many people consider them one of the 20th century's greatest inventions.
William Bradford Shockley Jr. was an American inventor, physicist, and eugenicist. He was the manager of a research group at Bell Labs that included John Bardeen and Walter Brattain. The three scientists were jointly awarded the 1956 Nobel Prize in Physics for "their researches on semiconductors and their discovery of the transistor effect".
Walter Houser Brattain was an American physicist at Bell Labs who, along with fellow scientists John Bardeen and William Shockley, invented the point-contact transistor in December 1947. They shared the 1956 Nobel Prize in Physics for their invention. Brattain devoted much of his life to research on surface states.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum or as free electrons and ions through an ionized gas.
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching.
Herbert Kroemer was a German-American physicist who, along with Zhores Alferov, received the Nobel Prize in Physics in 2000 for "developing semiconductor heterostructures used in high-speed- and opto-electronics". Kroemer was professor emeritus of electrical and computer engineering at the University of California, Santa Barbara, having received his Ph.D. in theoretical physics in 1952 from the University of Göttingen, Germany, with a dissertation on hot electron effects in the then-new transistor. His research into transistors was a stepping stone to the later development of mobile phone technologies.
In physics, a charge carrier is a particle or quasiparticle that is free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors. Examples are electrons, ions and holes. The term is used most commonly in solid state physics. In a conducting medium, an electric field can exert force on these free particles, causing a net motion of the particles through the medium; this is what constitutes an electric current. The electron and the proton are the elementary charge carriers, each carrying one elementary charge (e), of the same magnitude and opposite sign.
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electric current to pass through the junction only in one direction. The p- and n-type regions creating the junction are made by doping the semiconductor, for example by ion implantation, diffusion of dopants, or by epitaxy.
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor.
An extrinsic semiconductor is one that has been doped; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an intrinsic semiconductor. In an extrinsic semiconductor it is these foreign dopant atoms in the crystal lattice that mainly provide the charge carriers which carry electric current through the crystal. The doping agents used are of two types, resulting in two types of extrinsic semiconductor. An electron donor dopant is an atom which, when incorporated in the crystal, releases a mobile conduction electron into the crystal lattice. An extrinsic semiconductor that has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An electron acceptor dopant is an atom which accepts an electron from the lattice, creating a vacancy where an electron should be called a hole which can move through the crystal like a positively charged particle. An extrinsic semiconductor which has been doped with electron acceptor atoms is called a p-type semiconductor, because the majority of charge carriers in the crystal are positive holes.
A transistor is a semiconductor device with at least three terminals for connection to an electric circuit. In the common case, the third terminal controls the flow of current between the other two terminals. This can be used for amplification, as in the case of a radio receiver, or for rapid switching, as in the case of digital circuits. The transistor replaced the vacuum-tube triode, also called a (thermionic) valve, which was much larger in size and used significantly more power to operate. The first transistor was successfully demonstrated on December 23, 1947, at Bell Laboratories in Murray Hill, New Jersey. Bell Labs was the research arm of American Telephone and Telegraph (AT&T). The three individuals credited with the invention of the transistor were William Shockley, John Bardeen and Walter Brattain. The introduction of the transistor is often considered one of the most important inventions in history.
A definition in semiconductor physics, carrier lifetime is defined as the average time it takes for a minority carrier to recombine. The process through which this is done is typically known as minority carrier recombination.
Electrons and Holes in Semiconductors with Applications to Transistor Electronics is a book by Nobel Prize winner William Shockley, first published in 1950. It was a primary source, and was used as the first textbook, for scientists and engineers learning the new field of semiconductors as applied to the development of the transistor. This was the invention that led to electronic computers, ubiquitous communication devices, compact electronics controllers, and a host of other important inventions of the last half of the twentieth century.
William Gardner Pfann was an inventor and materials scientist with Bell Labs. Pfann is known for his development of zone melting which is essential to the semiconductor industry. As stated in an official history of Bell Labs, "Timely invention of zone refining by W.G.Pfann ... was a major contribution that helped bring the impurities in germanium and silicon under control."
John Northrup Shive was an American physicist and inventor. He made notable contributions in electronic engineering and solid-state physics during the early days of transistor development at Bell Laboratories. In particular, he produced experimental evidence that holes could diffuse through bulk germanium, and not just along the surface as previously thought. This paved the way from Bardeen and Brattain's point-contact transistor to Shockley's more-robust junction transistor. Shive is best known for inventing the phototransistor in 1948, and for the Shive wave machine in 1959.
Two-photon photovoltaic effect is an energy collection method based on two-photon absorption (TPA). The TPP effect can be thought of as the nonlinear equivalent of the traditional photovoltaic effect involving high optical intensities. This effect occurs when two photons are absorbed at the same time resulting in an electron-hole pair.
The first planar monolithic integrated circuit (IC) chip was demonstrated in 1960. The idea of integrating electronic circuits into a single device was born when the German physicist and engineer Werner Jacobi developed and patented the first known integrated transistor amplifier in 1949 and the British radio engineer Geoffrey Dummer proposed to integrate a variety of standard electronic components in a monolithic semiconductor crystal in 1952. A year later, Harwick Johnson filed a patent for a prototype IC. Between 1953 and 1957, Sidney Darlington and Yasuo Tarui proposed similar chip designs where several transistors could share a common active area, but there was no electrical isolation to separate them from each other.
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.
References
- 1 2 Nobel Lectures in Physics, Volumes 1942-1962. Singapore: World Scientific. 1998. p. 347. ISBN 9810234031.
- ↑ Cullis, Roger (2007). Patents, Inventions and the Dynamics of Innovation: A Multidisciplinary Study. Cheltenham, UK: Edward Elgar Publishing. p. 272. ISBN 9781845429584.
- ↑ Burton, J.A. et al. Effects of Nickel and Copper Impurities on the Recombination of Holes and Electrons in Germanium. J. Phys. Chem. 1953, 57, 8, p. 853
- Transistor Electronics: Imperfections, Unipolar and Analog Transistors, Shockley, W., Bell Telephone Laboratories, Inc., Murray Hill, N.J.; Proceedings of the IRE Volume: 40, Issue: 11 pp: 1289-1313 (Nov. 1952) doi : 10.1109/JRPROC.1952.273954
