Deblina Sarkar

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Deblina Sarkar
Deblina Sarkar.jpg
Sarkar in 2018
Born
Kolkata, West Bengal, India
Alma mater
Known forUltra thin quantum mechanical transistor (ATLAS-TFET), nanoscale biosensors, expansion microscopy
Awards2018 MIT Technology Review's Top 10 Innovator Under 35 from India, 2016 CGS/ProQuest Distinguished Dissertation Award in Mathematics, Physical Sciences, and Engineering, 2016 UCSB Winifred and Louis Lancaster Dissertation Award for Math, Physical Science and Engineering, 2008 U.S. Presidential Fellowship
Scientific career
Fields
Institutions MIT Media Lab
Thesis 2D Steep Transistor Technology: Overcoming Fundamental Barriers in Low-Power Electronics and Ultra-Sensitive Biosensors  (2015)
Doctoral advisor Kaustav Banerjee

Deblina Sarkar is an electrical engineer, [1] and inventor. [2] [3] She is an assistant professor at the Massachusetts Institute of Technology (MIT) and the AT&T Career Development Chair Professor of the MIT Media Lab. Sarkar has been internationally recognized for her invention of an ultra thin quantum mechanical transistor that can be scaled to nano-sizes and used in nanoelectronic biosensors. As the principal investigator of the Nano Cybernetic Biotrek Lab [4] at MIT, Sarkar leads a multidisciplinary team of researchers towards bridging the gap between nanotechnology and synthetic biology to build new nano-devices and life-machine interfacing technologies with which to probe and enhance biological function.

Contents

Early life and academic career

Sarkar was born in Kolkata, West Bengal, India, and pursued an undergraduate education in electrical engineering at the Indian Institute of Technology (Indian School of Mines), Dhanbad, India. During her undergraduate degree, she focused her research on nanoscale device design and spintronics, receiving international recognition for her work. [5] The paper she published in 2007 explored the efficacy of double-gate MOSFETs. [6] Before completing her degree, she spent a summer as an intern in Laurens Molenkamp's laboratory at the Wurzburg University, Germany, conducting research in spintronics. [5] She graduated with her B.E. degree in 2008, and moved to the United States to pursue both a master's degree and a Ph.D. at the University of California at Santa Barbara (UCSB).

At UCSB, Sarkar trained in nanoelectronics under the mentorship of Kaustav Banerjee where she pioneered techniques to improve energy-efficiency in nanodevices and developed novel field effect transistor biosensors using molybdenum disulfide (MoS2). [7] After completing her Ph.D. work in 2015, Sarkar began her postdoctoral fellowship at MIT in the Synthetic Neurobiology group. [8] Under the mentorship of Edward Boyden, Sarkar developed novel technologies to map brain structure and function.

In 2020, Sarkar joined the faculty at MIT as an Assistant Professor and became the AT&T Career Development Chair Professor at MIT Media Labs. [9] She became the principal investigator of a group of researchers which she has called the Nano-Cybernetic Biotrek Lab. [9] Sarkar broke down the name of her group to explain why the name represents the scientific questions and adventure they engage in. [9] The "nano" refers to the fact that the team builds nanoscale devices, cybernetic refers to using technology to control computing, biological, or hybrid systems, the bio represent the integration of biology, and "trek" represents the scientific adventure they have embarked on. [9]

Research and inventions

Atomically thin channel sub-thermal transistor

Sarkar invented a quantum-mechanical transistor, called the atomically thin and layered semiconducting-channel tunnel-FET (ATLAS-TFET). [10] This device overcomes the fundamental thermal limitations in power of conventional transistors and achieves subthermionic subthreshold swing due to quantum mechanical tunneling based carrier transport. Efficient tunneling is achieved because of its unique heterostructure design consisting of doped germanium source, atomically thin MoS2 channel, and large tunnelling area. [10] This transistor can help in addressing both dimensional and power scalability issues of Information Technology. [10] Sarkar's efforts to build this quantum-mechanical transistor, was published in Nature . [10] This work was highlighted by Nature News and Views as "Flat transistor defies the limit". [11]

Ultra-sensitive electrical biosensors

Sarkar developed a novel Field-effect transistor based biosensor using MoS2 which provides high sensitivity, 74-fold higher than graphene, but also ease of patternability and device fabrication as it has a 2D atomically layered structure. [12] Her development is compatible in biological tissues and provides a novel pathway to detect single molecules, highlighting the power of MoS2 materials in the next-generation of biosensors. [12] Moreover, Sarkar showed that steep turn-ON characteristics, obtained through novel technology such as band-to-band tunneling, can result in unprecedented performance improvement compared to that of conventional electrical biosensors, with around 4 orders of magnitude higher sensitivity and ten-fold lower detection time. [13] This can open up new avenues for wearable/implantable medical devices as well as point-of-care applications.

High-frequency model of graphene

Sarkar and team developed a detailed methodology for the accurate evaluation of DC to high-frequency impedance of 2D layered structures. [14] This model provides insights into the physics of on-chip 2D interconnects and inductors and revealed for the first-time anomalous skin effect in graphene. Going beyond the simplifying assumptions of Ohm's law, this model takes into account the effects of electric-field variation within mean free path and current dependency on the nonlocal electric-field, to accurately capture the high-frequency behavior of graphene. It showed for the first time that the high-frequency resistance of intercalation doped multi-layer graphene interconnects is lower than that of copper and carbon nanotubes (CNTs). Moreover, as high as 32 and 50% improvements in quality-factor compared to copper and CNTs respectively, can be achieved with graphene-based inductors. [15] This model is critical for building high frequency/RF devices in emerging technologies including "all 2D" integrated circuits, which can lead to flexible/conformable computers and prosthetic devices.

Nanoscale mapping of the brain

Sarkar and team, developed a novel tool called iterated direct expansion microscopy (idExM), which enables researchers optical access to nanoscale structures by expanding tissues. [16] Cellular structures, such as synapses between neurons, are densely packed with molecules impeding access of antibodies and other labelling tools. [17] Further, target molecules might be beyond the limits of diffraction such that light microscopes are unable to capture the fine detail and resolution of biological units. [17] To enable visualization of nanoscale biological architectures as well as gain labeling access to even the most dense biological structures, Sarkar and her team developed idExM where they imbed tissue in hydrogel and use both mechanical and electrostatic forces to achieve nearly 100-fold linear expansion of tissues. [17] This technology revealed nanoscale trans-synaptic architecture in brain tissue and intricate organization of amyloid-β plaques associated with Alzheimer's disease. [17]

Awards and honors

Selected publications

Related Research Articles

<span class="mw-page-title-main">Moore's law</span> Observation on the growth of integrated circuit capacity

Moore's law is the observation that the number of transistors in an integrated circuit (IC) doubles about every two years. Moore's law is an observation and projection of a historical trend. Rather than a law of physics, it is an empirical relationship linked to gains from experience in production.

<span class="mw-page-title-main">Nanoelectromechanical systems</span> Class of devices for nanoscale functionality

Nanoelectromechanical systems (NEMS) are a class of devices integrating electrical and mechanical functionality on the nanoscale. NEMS form the next logical miniaturization step from so-called microelectromechanical systems, or MEMS devices. NEMS typically integrate transistor-like nanoelectronics with mechanical actuators, pumps, or motors, and may thereby form physical, biological, and chemical sensors. The name derives from typical device dimensions in the nanometer range, leading to low mass, high mechanical resonance frequencies, potentially large quantum mechanical effects such as zero point motion, and a high surface-to-volume ratio useful for surface-based sensing mechanisms. Applications include accelerometers and sensors to detect chemical substances in the air.

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<span class="mw-page-title-main">Potential applications of carbon nanotubes</span>

Carbon nanotubes (CNTs) are cylinders of one or more layers of graphene (lattice). Diameters of single-walled carbon nanotubes (SWNTs) and multi-walled carbon nanotubes (MWNTs) are typically 0.8 to 2 nm and 5 to 20 nm, respectively, although MWNT diameters can exceed 100 nm. CNT lengths range from less than 100 nm to 0.5 m.

Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires or advanced molecular electronics.

<span class="mw-page-title-main">Stretchable electronics</span>

Stretchable electronics, also known as elastic electronics or elastic circuits, is a group of technologies for building electronic circuits by depositing or embedding electronic devices and circuits onto stretchable substrates such as silicones or polyurethanes, to make a completed circuit that can experience large strains without failure. In the simplest case, stretchable electronics can be made by using the same components used for rigid printed circuit boards, with the rigid substrate cut to enable in-plane stretchability. However, many researchers have also sought intrinsically stretchable conductors, such as liquid metals.

<span class="mw-page-title-main">IEEE Kiyo Tomiyasu Award</span>

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<span class="mw-page-title-main">Field-effect transistor</span> Type of transistor

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References

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  3. Gupta, Sanjay (2018-03-30). "EmTech 2018: Innovators under 35". Mint. Retrieved 2023-05-25.
  4. "Nano-Cybernetic Biotrek Lab: Professor Deblina Sarkar". web.mit.edu. Retrieved 2020-05-10.
  5. 1 2 "Deblina Sarkar | Nanoelectronics Research Lab | UC Santa Barbara". nrl.ece.ucsb.edu. Retrieved 2020-05-10.
  6. Sarkar, Deblina; Ganguly, Samiran; Datta, Deepanjan; Sarab, A. A. P.; Dasgupta, Sudeb (January 2007). "Modeling of Leakages in Nano-Scale DG MOSFET to Implement Low Power SRAM: A Device/Circuit Co-Design". 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07). pp. 183–188. doi:10.1109/VLSID.2007.110. ISBN   978-0-7695-2762-8. S2CID   14150555.
  7. "Molybdenum disulfide field-effect transistors make supersensitive biosensors". The American Ceramic Society. 2014-09-12. Retrieved 2020-05-10.
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  9. 1 2 3 4 "Deblina Sarkar joins the MIT Media Lab faculty". MIT News. 19 February 2020. Retrieved 2020-05-10.
  10. 1 2 3 4 Sarkar, Deblina; Xie, Xuejun; Liu, Wei; Cao, Wei; Kang, Jiahao; Gong, Yongji; Kraemer, Stephan; Ajayan, Pulickel M.; Banerjee, Kaustav (October 2015). "A subthermionic tunnel field-effect transistor with an atomically thin channel". Nature. 526 (7571): 91–95. Bibcode:2015Natur.526...91S. doi:10.1038/nature15387. ISSN   1476-4687. PMID   26432247. S2CID   4467004.
  11. Tomioka, Katsuhiro (October 2015). "Flat transistor defies the limit". Nature. 526 (7571): 51–52. doi: 10.1038/526051a . PMID   26432242. S2CID   205086299.
  12. 1 2 Sarkar, Deblina; Liu, Wei; Xie, Xuejun; Anselmo, Aaron C.; Mitragotri, Samir; Banerjee, Kaustav (2014-04-22). "MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors". ACS Nano. 8 (4): 3992–4003. doi:10.1021/nn5009148. ISSN   1936-0851. PMID   24588742.
  13. Sarkar, Deblina; Banerjee, Kaustav (2012-04-05). "Proposal for Tunnel-Field-Effect-Transistor as Ultra-Sensitive and Label-Free Biosensors". Applied Physics Letters. 100 (14): 143108. Bibcode:2012ApPhL.100n3108S. doi:10.1063/1.3698093.
  14. Sarkar, Deblina; Xu, Chuan; Li, Hong; Banerjee, Kaustav (2011-02-14). "High-Frequency Behavior of Graphene-Based Interconnects—Part I: Impedance Modeling". IEEE Transactions on Electron Devices. 58 (3): 843–852. Bibcode:2011ITED...58..843S. doi:10.1109/TED.2010.2102031. ISSN   1557-9646. S2CID   5558117.
  15. Sarkar, Deblina; Xu, Chuan; Li, Hong; Banerjee, Kaustav (2011-02-14). "High-Frequency Behavior of Graphene-Based Interconnects—Part II: Impedance Analysis and Implications for Inductor Design". IEEE Transactions on Electron Devices. 58 (3): 853–859. Bibcode:2011ITED...58..853S. doi:10.1109/TED.2010.2102035. ISSN   1557-9646. S2CID   13652638.
  16. Sarkar, Deblina. "Iterative Direct Expansion Microscopy". MIT Media Lab. Retrieved 2020-05-10.
  17. 1 2 3 4 "Project Overview ‹ Nanoscale mapping of bio-molecular building blocks of brain". MIT Media Lab. Retrieved 2020-05-10.
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