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Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality,and high-performance,solid materials. The process is often used in the semiconductor industry to produce thin films.
MEMS is the technology of microscopic devices incorporating both electronic and moving parts. MEMS are made up of components between 1 and 100 micrometres in size,and MEMS devices generally range in size from 20 micrometres to a millimetre,although components arranged in arrays can be more than 1000 mm2. They usually consist of a central unit that processes data and several components that interact with the surroundings.
Semiconductor device fabrication is the process used to manufacture semiconductor devices,typically integrated circuits (ICs) such as computer processors,microcontrollers,and memory chips. It is a multiple-step photolithographic and physico-chemical process during which electronic circuits are gradually created on a wafer,typically made of pure single-crystal semiconducting material. Silicon is almost always used,but various compound semiconductors are used for specialized applications.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state,rather than as free electrons across a vacuum or as free electrons and ions through an ionized gas.
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.
A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin film deposition. TFTs are grown on a supporting substrate,such as glass. This differs from the conventional bulk metal oxide field effect transistor (MOSFET),where the semiconductor material typically is the substrate,such as a silicon wafer. The traditional application of TFTs is in TFT liquid-crystal displays.
Silicon carbide (SiC),also known as carborundum,is a hard chemical compound containing silicon and carbon. A semiconductor,it occurs in nature as the extremely rare mineral moissanite,but has been mass-produced as a powder and crystal since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance,such as car brakes,car clutches and ceramic plates in bulletproof vests. Large single crystals of silicon carbide can be grown by the Lely method and they can be cut into gems known as synthetic moissanite.
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths,the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures,although grain-to-grain epitaxy has been observed in granular films. For most technological applications,single-domain epitaxy,which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal,is preferred. Epitaxy can also play an important role while growing superlattice structures.
In semiconductor manufacturing,a low-κ is a material with a small relative dielectric constant relative to silicon dioxide. Low-κdielectric material implementation is one of several strategies used to allow continued scaling of microelectronic devices,colloquially referred to as extending Moore's law. In digital circuits,insulating dielectrics separate the conducting parts from one another. As components have scaled and transistors have gotten closer together,the insulating dielectrics have thinned to the point where charge build up and crosstalk adversely affect the performance of the device. Replacing the silicon dioxide with a low-κdielectric of the same thickness reduces parasitic capacitance,enabling faster switching speeds and lower heat dissipation. In conversation such materials may be referred to as "low-k" rather than "low-κ" (low-kappa).
Dry etching refers to the removal of material,typically a masked pattern of semiconductor material,by exposing the material to a bombardment of ions that dislodge portions of the material from the exposed surface. A common type of dry etching is reactive-ion etching. Unlike with many of the wet chemical etchants used in wet etching,the dry etching process typically etches directionally or anisotropically.
Lam Research Corporation is an American supplier of wafer-fabrication equipment and related services to the semiconductor industry. Its products are used primarily in front-end wafer processing,which involves the steps that create the active components of semiconductor devices and their wiring (interconnects). The company also builds equipment for back-end wafer-level packaging (WLP) and for related manufacturing markets such as for microelectromechanical systems (MEMS).
A hybrid silicon laser is a semiconductor laser fabricated from both silicon and group III-V semiconductor materials. The hybrid silicon laser was developed to address the lack of a silicon laser to enable fabrication of low-cost,mass-producible silicon optical devices. The hybrid approach takes advantage of the light-emitting properties of III-V semiconductor materials combined with the process maturity of silicon to fabricate electrically driven lasers on a silicon wafer that can be integrated with other silicon photonic devices.
A hardmask is a material used in semiconductor processing as an etch mask instead of a polymer or other organic "soft" resist material.
A micropipe,also called a micropore,microtube,capillary defect or pinhole defect,is a crystallographic defect in a single crystal substrate. Minimizing the presence of micropipes is important in semiconductor manufacturing,as their presence on a wafer can result in the failure of integrated circuits made from that wafer.
Selective area epitaxy is the local growth of epitaxial layer through a patterned amorphous dielectric mask (typically SiO2 or Si3N4) deposited on a semiconductor substrate. Semiconductor growth conditions are selected to ensure epitaxial growth on the exposed substrate,but not on the dielectric mask. SAE can be executed in various epitaxial growth methods such as molecular beam epitaxy (MBE),metalorganic vapour phase epitaxy (MOVPE) and chemical beam epitaxy (CBE). By SAE,semiconductor nanostructures such as quantum dots and nanowires can be grown to their designed places.
Carbide-derived carbon (CDC),also known as tunable nanoporous carbon,is the common term for carbon materials derived from carbide precursors,such as binary (e.g. SiC,TiC),or ternary carbides,also known as MAX phases (e.g.,Ti2AlC,Ti3SiC2). CDCs have also been derived from polymer-derived ceramics such as Si-O-C or Ti-C,and carbonitrides,such as Si-N-C. CDCs can occur in various structures,ranging from amorphous to crystalline carbon,from sp2- to sp3-bonded,and from highly porous to fully dense. Among others,the following carbon structures have been derived from carbide precursors:micro- and mesoporous carbon,amorphous carbon,carbon nanotubes,onion-like carbon,nanocrystalline diamond,graphene,and graphite. Among carbon materials,microporous CDCs exhibit some of the highest reported specific surface areas (up to more than 3000 m2/g). By varying the type of the precursor and the CDC synthesis conditions,microporous and mesoporous structures with controllable average pore size and pore size distributions can be produced. Depending on the precursor and the synthesis conditions,the average pore size control can be applied at sub-Angstrom accuracy. This ability to precisely tune the size and shapes of pores makes CDCs attractive for selective sorption and storage of liquids and gases (e.g.,hydrogen,methane,CO2) and the high electric conductivity and electrochemical stability allows these structures to be effectively implemented in electrical energy storage and capacitive water desalinization.
Crystalline silicon or (c-Si) is the crystalline forms of silicon,either polycrystalline silicon,or monocrystalline silicon. Crystalline silicon is the dominant semiconducting material used in photovoltaic technology for the production of solar cells. These cells are assembled into solar panels as part of a photovoltaic system to generate solar power from sunlight.
Potential graphene applications include lightweight,thin,and flexible electric/photonics circuits,solar cells,and various medical,chemical and industrial processes enhanced or enabled by the use of new graphene materials.
Epitaxial graphene growth on silicon carbide (SiC) by thermal decomposition is a method to produce large-scale few-layer graphene (FLG). Graphene is one of the most promising nanomaterials for the future because of its various characteristics,like strong stiffness and high electric and thermal conductivity. Still,reproducible production of Graphene is difficult,thus many different techniques have been developed. The main advantage of epitaxial graphene growth on silicon carbide over other techniques is to obtain graphene layers directly on a semiconducting or semi-insulating substrate which is commercially available.
Aristos Christou is an American engineer and scientist,academic professor and researcher. He is a Professor of Materials Science,Professor of Mechanical Engineering and Professor of Reliability Engineering at the University of Maryland.
References
- ↑ "Francesca Iacopi".
- ↑ "Francesca Iacopi".
- 1 2 "Global Innovation Award for Graphene-on-Silicon Carbide MEMS technology".
- ↑ "IEEE NSW Section Electron Devices Society Chapter".
- ↑ "ExCom/Elected Members-at-Large". Archived from the original on 10 July 2019.
- ↑ "Francesca Iacopi".
- ↑ "Francesca Iacopi". Archived from the original on 21 September 2020. Retrieved 27 August 2020.
- 1 2 "Graphene: Engineering the 'wonder material' to live up to the hype". 13 December 2018.
- 1 2 "Future Fellowships".
- ↑ "Francesca on expert panel to lead Queensland's science industry".
- ↑ "Welcome Francesca Iacopi, New Associate Investigator".
- ↑ "TMOS".
- ↑ "Tests of CMS MSGC modules at PSI".
- ↑ Iacopi, F.; Brongersma, S.H; Vandevelde, B.; O'Toole, M.; Degryse, D.; Travaly, Y.; Maex, K. (2004). "Challenges for structural stability of ultra-low-k-based interconnects". Microelectronic Engineering. 75: 54–62. doi:10.1016/j.mee.2003.09.011.
- ↑ Iacopi, F.; Stucchi, M.; Richard, O.; Maex, K. (2004). "Electrical Equivalent Sidewall Damage in Patterned Low-k Dielectrics". Electrochemical and Solid-State Letters. 7 (4): G79. doi:10.1149/1.1649401.
- ↑ Iacopi, F.; Richard, O.; Eichhammer, Y.; Bender, H.; Vereecken, P. M.; De Gendt, S.; Heyns, M. (2008). "Size-Dependent Characteristics of Indium-Seeded Si Nanowire Growth". Electrochemical and Solid-State Letters. 11 (9): K98. doi:10.1149/1.2945800. hdl: 10072/44945 .
- ↑ Iacopi, Francesca; Eichhammer, Yann; Massy, Claire; Vereecken, Philippe M.; Moelans, Nele; Richard, Olivier; Smeets, Dries; Blanpain, Bart; De Gendt, Stefan; Heyns, Marc (2008). "Indium –assisted growth of Si nanowires: perspectives on controlled VLS growth for CMOS applications". MRS Proceedings. 1080. doi:10.1557/PROC-1080-O05-01. S2CID 16455253.
- ↑ Iacopi, Francesca; Choi, Jai Hyuk; Terashima, Kazuo; Rice, Philip M.; Dubois, Geraud (2011). "Cryogenic plasmas for controlled processing of nanoporous materials". Physical Chemistry Chemical Physics. 13 (9): 3634–3637. Bibcode:2011PCCP...13.3634I. doi:10.1039/C0CP02660C. PMID 21264396.
- ↑ Mishra, Neeraj; Boeckl, John J.; Tadich, Anton; Jones, Robert T.; Pigram, Paul J.; Edmonds, Mark; Fuhrer, Michael S.; Nichols, Barbara M.; Iacopi, Francesca (2017). "Solid source growth of graphene with Ni–Cu catalysts: towards high quality in situ graphene on silicon" (PDF). Journal of Physics D: Applied Physics. 50 (9): 095302. Bibcode:2017JPhD...50i5302M. doi:10.1088/1361-6463/AA560B. S2CID 73607747. Archived from the original (PDF) on 13 February 2020.
- ↑ Cunning, Benjamin V.; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Wood, Barry; Iacopi, Francesca (2014). "Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers". Nanotechnology. 25 (32): 325301. Bibcode:2014Nanot..25F5301C. doi:10.1088/0957-4484/25/32/325301. PMID 25053702. S2CID 25758275.
- ↑ Pradeepkumar, Aiswarya; Amjadipour, Mojtaba; Mishra, Neeraj; Liu, Chang; Fuhrer, Michael S.; Bendavid, Avi; Isa, Fabio; Zielinski, Marcin; Sirikumara, Hansika I.; Jayasekara, Thushari; Gaskill, D. Kurt; Iacopi, Francesca (2020). "p-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies". ACS Applied Nano Materials. 3: 830–841. doi:10.1021/acsanm.9b02349. hdl: 10453/139252 . S2CID 214174126.
- ↑ "2024 Fellow Class" (PDF). IEEE. Retrieved 18 December 2023.
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