Joan Redwing

Last updated
Joan Redwing
Alma mater University of Pittsburgh (BS)
University of Wisconsin–Madison (PhD)
Awards APS Fellow (2012)
MRS Fellow (2015)
AAAS Fellow (2016)
Scientific career
Fields Electronic materials
Institutions Pennsylvania State University (2000–present)
Thesis A study of dopant incorporation into gallium arsenide grown by metal-organic vapor phase epitaxy  (1994)
Website sites.psu.edu/redwing/

Joan M. Redwing is an American materials scientist known for research on electronic and optoelectronic materials, including the processing of semiconductor thin films and nanomaterials by metalorganic chemical vapor deposition (MOCVD). [1] Redwing is a distinguished professor of materials science and engineering and electrical engineering at Pennsylvania State University and director of the university's 2D Crystal Consortium research facility. She is a fellow of the American Association for the Advancement of Science, the American Physical Society, and the Materials Research Society.

Contents

Education and career

Joan M. Redwing attended the University of Pittsburgh, Pennsylvania, where she received a bachelor of science in chemical engineering in 1986. [1] [2] After graduation, from 1986 to 1988, she worked at General Electric Corporate Research & Development in New York where her work was focused on tungsten-coated X-ray targets produced by chemical vapor deposition. She pursued a doctoral degree in chemical engineering from the University of Wisconsin–Madison under the advisement of Thomas Kuech. She received her degree in 1994; [2] her thesis was A study of dopant incorporation into gallium arsenide grown by metal-organic vapor phase epitaxy. [3]

Scanning electron microscope image of a gallium nitride nanowire from a 2011 publication co-authored by Redwing Scanning-electron-microscopy-image-of-a-GaN-NW-with-four-contacts.jpg
Scanning electron microscope image of a gallium nitride nanowire from a 2011 publication co-authored by Redwing

Redwing joined Advanced Technology Materials Inc., in Connecticut, as a research engineer, where she researched group III-nitride semiconductors grown by MOCVD, especially aluminum gallium arsenide (AlGaN) and gallium nitride (GaN) two-dimensional electron gas heterostructures, and co-authored several patents. She moved to Epitronics Inc., an Arizona subsidiary of ATMI, in 1997 where she held the position of Manager of III-V Technology and led a epitaxial wafer manufacturing group. [2] She joined the faculty of Pennsylvania State University (PSU) in 2000 as an assistant professor with appointments in the Department of Materials Science and Engineering and the Department of Electrical Engineering. [5] She continued studying group III-nitride semiconductors at PSU and began research on synthesizing semiconductor nanowires, in particular those made from silicon or silicon/silicon–germanium for usage in nanoelectronics and photovoltaics, among other subjects. [2]

In 2014, Redwing's research group was one of three groups at the university's Center for Two-dimensional and Layered Materials (2DLM) that received an award from the National Science Foundation (NSF) to research 2D materials. [6] As a 2016 Fulbright Scholar to Sweden, Redwing spent three months at Lund University with the research group of Lars-Erik Wernersson  [ Wikidata ] to study III-V nanowire materials as replacements for conventional silicon semiconductors. [7] She has been director and synthesis lead of the Two-Dimensional Crystal Consortium (2DCC), a materials research facility at Penn State that received NSF funding starting in 2016, [8] [9] where her group has continued research on 2D materials. [10] [11] She was named a Distinguished Professor in 2022. [5]

Redwing has served as an editor of the Journal of Crystal Growth and on the executive editorial board of 2D Materials . [1] [12] [13] She chaired the 2018 Materials Research Society Fall Meeting with Kristen H. Brosnan, David LaVan, Patrycja Paruch, and Takao Someya. [14]

Recognition

Redwing was elected a Fellow of the American Physical Society in 2012, after a nomination from the APS Division of Materials Physics, for "key contributions to the mechanistic understanding of materials synthesis by vapor growth, including Si and SiGe nanowires, group-III nitrides and boride-based superconductors." [15]

In 2015, she was named a Fellow of the Materials Research Society, a distinction conferred to members whose "sustained and distinguished contributions to the advancement of materials research are internationally recognized". [16] In the following year she was named a Fellow of the American Association for the Advancement of Science for "key contributions to the understanding of materials synthesis of nanostructured materials including nanowires, 2D structures, group-III nitrides, topological insulators and boride-based superconductors." [17] [18]

Related Research Articles

<span class="mw-page-title-main">Band gap</span> Energy range in a solid where no electron states can exist

In solid-state physics, a band gap, also called an energy gap, is an energy range in a solid where no electronic states can exist. In graphs of the electronic band structure of solids, the band gap generally refers to the energy difference between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote a valence electron bound to an atom to become a conduction electron, which is free to move within the crystal lattice and serve as a charge carrier to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there is no generated current due to no net charge carrier mobility. However, if some electrons transfer from the valence band to the conduction band, then current can flow. Therefore, the band gap is a major factor determining the electrical conductivity of a solid. Substances with large band gaps are generally insulators, those with smaller band gaps are semiconductors, while conductors either have very small band gaps or none, because the valence and conduction bands overlap to form a continuous band.

<span class="mw-page-title-main">Gallium arsenide</span> Chemical compound

Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.

<span class="mw-page-title-main">Epitaxy</span> Crystal growth process relative to the substrate

Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlattice structures.

<span class="mw-page-title-main">Gallium nitride</span> Chemical compound

Gallium nitride is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor.

<span class="mw-page-title-main">Blue laser</span> Laser which emits light with blue wavelengths

A blue laser is a laser that emits electromagnetic radiation with a wavelength between 360 and 480 nanometers, which the human eye sees as blue or violet.

<span class="mw-page-title-main">Indium gallium nitride</span> Chemical compound

Indium gallium nitride is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy. InxGa1−xN has a direct bandgap span from the infrared for InN to the ultraviolet of GaN. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7.

<span class="mw-page-title-main">Isamu Akasaki</span> Japanese engineer (1929–2021)

Isamu Akasaki was a Japanese engineer and physicist, specializing in the field of semiconductor technology and Nobel Prize laureate, best known for inventing the bright gallium nitride (GaN) p-n junction blue LED in 1989 and subsequently the high-brightness GaN blue LED as well.

Dr. Harold M. Manasevit (1927–2008) was an American materials scientist.

IQE PLC is a British semiconductor company founded 1988 in Cardiff, Wales, which manufactures advanced epitaxial wafers for a wide range of technology applications for wireless, optoelectronic, electronic and solar devices. IQE specialises in advanced silicon and compound semiconductor materials based on gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN) and silicon. The company is the largest independent outsource producer of epiwafers manufactured by metalorganic vapour phase epitaxy (MOCVD), molecular beam epitaxy (MBE) and chemical vapor deposition (CVD).

Lin Lanying, was a Chinese electrical engineer, materials scientist, physicist, and politician. She is called the "mother of aerospace materials" and the "mother of semiconductor materials" in China.

<span class="mw-page-title-main">Gallium nitride nanotube</span>

Gallium nitride nanotubes (GaNNTs) are nanotubes of gallium nitride. They can be grown by chemical vapour deposition.

Carol Trager-Cowan is a Scottish physicist who is a Reader in physics and Science Communicator at the University of Strathclyde. She works on scanning electron microscopy, including Electron backscatter diffraction (EBSD), diffraction contrast and cathodoluminescence imaging.

<span class="mw-page-title-main">Frances M. Ross</span> Materials science and engineering professor

Frances Mary Ross is the Ellen Swallow Richards Professor in Materials Science and Engineering at Massachusetts Institute of Technology. Her work involves the use of in situ transmission electron microscopy to study nanostructure formation. In 2018 she was awarded the International Federation of Societies for Microscopy Hatsujiro Hashimoto Medal. Ross is a Fellow of the American Association for the Advancement of Science, the American Physical Society, the Microscopy Society of America and the Royal Microscopical Society,

<span class="mw-page-title-main">Jagdish Narayan</span> Indian-born American engineer

Jagdish Narayan is an Indian-born American engineer. Since 2001, he has served as the John C. C. Fan Family Distinguished Chair Professor in the Materials Science and Engineering Department at North Carolina State University. He is also the distinguished visiting scientist at Oak Ridge National Laboratory. Narayan has published above 500 high-impact journal articles, with his discoveries covered in over 40 US and international patents. His body of work can be segregated into highly nonequilibrium laser processing of novel nanomaterials, including Q-carbon, Q-BN, diamond and c-BN related materials. These research articles have received over 31,000 Google Citations with h-index >85. Narayan and his students discovered Q-carbon as the new allotrope, thereby finding a new route to fabricate diamond and related materials in ambient conditions, resulting in properties and applications ranging from high-temperature superconductivity in boron-doped Q-carbon to hardness than diamond in Q-carbon to enhanced field-emission in Q-carbon to nitrogen-doped nanodiamonds for quantum computing, nanosensing and solid-state devices.

<span class="mw-page-title-main">Lisa M. Porter</span> American materials scientist

Lisa Marie Spellman Porter is an American materials scientist who is a Professor of Materials Science at Carnegie Mellon University. She works on new ways to process and characterise electronic materials. She has previously served as President of the American Vacuum Society.

<span class="mw-page-title-main">Aristos Christou</span> American engineer

Aristos Christou is an American engineer and scientist, academic professor and researcher. He is a Professor of Materials Science, Professor of Mechanical Engineering and Professor of Reliability Engineering at the University of Maryland.

Huili Grace Xing is the William L. Quackenbush Professor of Electrical and Computer Engineering, and Materials Science and Engineering in the Cornell University College of Engineering. In 2019, Xing was elected a Fellow of the American Physical Society (APS) "for pioneering contributions in polar wide-bandgap semiconductors, 2D crystal semiconductors and layered crystals," as well as Fellow of the American Association for the Advancement of Science (AAAS) in 2021.

<span class="mw-page-title-main">Srabanti Chowdhury</span> Indian-American Electrical Engineer

Srabanti Chowdhury is an Indian-American Electrical Engineer who is an associate professor of electrical engineering at Stanford University. She is a senior fellow of the Precourt Institute for Energy. At Stanford she works on ultra-wide and wide-bandgap semiconductors and device engineering for energy-efficient electronic devices. She serves as Director for Science Collaborations at the United States Department of Energy Energy Frontier Research Center ULTRA.

References

  1. 1 2 3 "Joan Redwing". Penn State Department of Materials Science and Engineering. 19 June 2018. Retrieved October 19, 2022.
  2. 1 2 3 4 "Joan Redwing". Redwing Research Group. Retrieved October 21, 2022.
  3. ↑ Redwing, Joan Marie (1994). A study of dopant incorporation into gallium arsenide grown by metal-organic vapor phase epitaxy (Thesis). University of Wisconsin–Madison. OCLC   32264444 . Retrieved October 23, 2022.
  4. ↑ Ye, Gangfeng; Shi, Kelvin; Burke, Robert; Redwing, Joan M.; Mohney, Suzanne E. (2011). "Ti/Al Ohmic Contacts to n-Type GaN Nanowires". Journal of Nanomaterials . 2011: 1–6. doi: 10.1155/2011/876287 .
  5. 1 2 "Joan Redwing and Sukyoung Lee named distinguished professors". Pennsylvania State University. March 7, 2022. Retrieved October 19, 2022.
  6. ↑ "NSF funds three Penn State teams to study 2D materials". Pennsylvania State University. October 1, 2014. Retrieved October 19, 2022.
  7. ↑ Jackson, Liam (January 19, 2017). "Fulbright takes researcher to Sweden to study new transistor materials". Pennsylvania State University . Retrieved October 19, 2022.
  8. ↑ "NSF renews funding for Two-Dimensional Crystal Consortium". Pennsylvania State University. May 25, 2021. Retrieved October 22, 2022.
  9. ↑ Oberdick, Jamie (September 8, 2021). "Penn State partners with two universities for diversity in materials research". Pennsylvania State University . Retrieved October 22, 2022.
  10. ↑ Pennsylvania State University (February 13, 2018). "Scalable two-dimensional materials advance future-gen electronics". Phys.org . Retrieved October 23, 2022.
  11. ↑ Montalbano, Elizabeth (June 6, 2019). "New 2D Materials Show Promise for Future Electronic Devices". Design News . Retrieved October 23, 2022.
  12. ↑ "Editorial board - Journal of Crystal Growth | ScienceDirect.com by Elsevier". ScienceDirect. Archived from the original on October 19, 2022. Retrieved October 30, 2022.
  13. ↑ "Editorial board". IOP Publishing. Archived from the original on October 30, 2022. Retrieved October 30, 2022.
  14. ↑ "Brosnan, LaVan, Paruch, Redwing, and Someya to chair 2018 MRS Fall Meeting". MRS Bulletin . 42 (5): 391–393. May 2017. Bibcode:2017MRSBu..42R.391.. doi: 10.1557/mrs.2017.104 .
  15. ↑ "APS Fellow Archive". American Physical Society . Retrieved October 19, 2022.
  16. ↑ "Two material scientists named Fellows of the Materials Research Society". Pennsylvania State University. February 11, 2015. Retrieved October 19, 2022.
  17. ↑ A'ndrea Elyse Messer (November 28, 2016). "Five Penn State researchers named AAAS Fellows". Pennsylvania State University . Retrieved October 19, 2022.
  18. ↑ "5 PSU researchers named AAAS Fellows". Republican and Herald . University Park. January 5, 2017. p. A23. Retrieved October 19, 2022– via Newspapers.com.
This page is based on this Wikipedia article
Text is available under the CC BY-SA 4.0 license; additional terms may apply.
Images, videos and audio are available under their respective licenses.