Samuel Graham (engineer)

Last updated
Samuel Graham
Alma mater Georgia Tech
Florida State University
Scientific career
Institutions Georgia Tech
Sandia National Laboratories
Thesis Effective thermal conductivity of damaged composites  (1999)

Samuel Graham, Jr. is an American engineer and currently the dean of the Clark School of Engineering at the University of Maryland. He was previously the Eugene C. Gwaltney, Jr. School Chair and Professor at Georgia Tech. Graham is a Fellow of the American Society of Mechanical Engineers and serves on the Advisory Board of the Air Force Research Laboratory.

Contents

Early life and education

Graham studied engineering at Florida State University. He was a graduate student at Georgia Tech, where he earned a doctoral degree under the supervision of David L. McDowell in 1999. [1] After completing his PhD research, Graham joined Sandia National Laboratories. [1]

Research and career

In 2003 Graham was appointed Assistant Professor at Georgia Tech, where he leads the Electronics Manufacturing and Reliability Laboratory. [1] [2] His research considers the fabrication, encapsulation and packaging of semiconductor devices. [3] Specifically, Graham has studied wide bandgap semiconductors (including gallium nitride, GaN, gallium oxide and hafnium dioxide), and how they interact with their substrates (including silicon carbide). Such materials are often used in radio frequency communications. In these devices, thermal resistance at interfaces limits their performance. [4] To understand how the operational stability of devices based on these materials, Graham makes use of electro-thermal and thermomechanical modeling.

Beyond his work on inorganic materials, Graham has worked on devices made from organic electronic materials. Using vacuum-based deposition to create ultrathin barriers that protect organic materials from degradation. Such barriers are essential for the realization of wearable devices and next-generation displays based upon these materials. [1]

In 2018 Graham was appointed Eugene C. Gwaltney, Jr. School Chair at Georgia Tech. [5] [6] He has worked with Baratunde A. Cola to create the Academic and Research Leadership (ARL) program, which prepares minority engineers for careers in academia and industry. [7]

In 2021 Graham was appointed dean of the Clark School of Engineering at the University of Maryland. Graham's new position began October 1, 2021. [8]

Select publications

Personal life

Graham is married with two children. [2]

Related Research Articles

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<span class="mw-page-title-main">Band gap</span> Energy range in a solid where no electron states exist

In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there is no generated current due to no net charge carrier mobility. However, if some electrons transfer from the valence band to the conduction band, then current can flow. Therefore, the band gap is a major factor determining the electrical conductivity of a solid. Substances having large band gaps are generally insulators, those with small band gaps are semiconductor, and conductors either have very small band gaps or none, because the valence and conduction bands overlap to form a continuous band.

<span class="mw-page-title-main">Laser diode</span> Semiconductor laser

A laser diode is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction.

Wide-bandgap semiconductors are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators.

<span class="mw-page-title-main">Gallium nitride</span> Chemical compound

Gallium nitride is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.

<span class="mw-page-title-main">Indium phosphide</span> Chemical compound

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.

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Aluminium gallium indium phosphide is a semiconductor material that provides a platform for the development of multi-junction photovoltaics and optoelectronic devices. It spans a direct bandgap ranging from ultraviolet to infrared photon energies.

<span class="mw-page-title-main">Quantum dot solar cell</span> Type of solar cell based on quantum dot devices

A quantum dot solar cell (QDSC) is a solar cell design that uses quantum dots as the captivating photovoltaic material. It attempts to replace bulk materials such as silicon, copper indium gallium selenide (CIGS) or cadmium telluride (CdTe). Quantum dots have bandgaps that are adjustable across a wide range of energy levels by changing their size. In bulk materials, the bandgap is fixed by the choice of material(s). This property makes quantum dots attractive for multi-junction solar cells, where a variety of materials are used to improve efficiency by harvesting multiple portions of the solar spectrum.

Third-generation photovoltaic cells are solar cells that are potentially able to overcome the Shockley–Queisser limit of 31–41% power efficiency for single bandgap solar cells. This includes a range of alternatives to cells made of semiconducting p-n junctions and thin film cells. Common third-generation systems include multi-layer ("tandem") cells made of amorphous silicon or gallium arsenide, while more theoretical developments include frequency conversion,, hot-carrier effects and other multiple-carrier ejection techniques.

Ben Wang is an American materials scientist who specializes in materials engineering, applying emerging technologies to improve the manufacturing of affordable composite materials. He is a professor at the Georgia Institute of Technology's H. Milton Stewart School of Industrial and Systems Engineering, holds the Eugene C. Gwaltney, Jr. Chair in Manufacturing, and is the Executive Director of the Georgia Tech Manufacturing Institute.

The FAMU-FSU College of Engineering is the joint college of engineering of Florida A&M University and Florida State University. The College of Engineering was established as a joint program serving two universities in Tallahassee, Florida: The Florida Agricultural and Mechanical University, which received recognition from the National Academy of Sciences and the National Academy of Engineering in 2010 for ranking number one as the institution of origin for African Americans earning Doctorates in Natural Science and Engineering; and, Florida State University which has gained worldwide recognition for its extensive graduate and research programs. The college is located less than three miles from either university.

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<span class="mw-page-title-main">Copper indium gallium selenide solar cell</span>

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