Silicon carbide

Last updated
Silicon carbide
SiC p1390066.jpg
A laboratory-grown synthetic SiC monocrystal
Preferred IUPAC name
Silicon carbide
Other names
3D model (JSmol)
ECHA InfoCard 100.006.357 OOjs UI icon edit-ltr-progressive.svg
EC Number
  • 206-991-8
MeSH Silicon+carbide
PubChem CID
RTECS number
  • VW0450000
  • InChI=1S/CSi/c1-2 Yes check.svgY
  • InChI=1/CSi/c1-2
  • [C-]#[Si+]
Molar mass 40.096 g·mol−1
AppearanceYellow to green to bluish-black, iridescent crystals [1]
Density 3.16 g⋅cm−3 (hex.) [2]
Melting point 2,830 °C (5,130 °F; 3,100 K) [2] (decomposes)
Solubility Insoluble in water, soluble in molten alkalis and molten iron [3]
Electron mobility ~900 cm2/(V⋅s) (all polytypes)
−12.8 × 10−6 cm3/mol [4]
2.55 (infrared; all polytypes) [5]
GHS labelling:fibres [6]
P201, P202, P260, P261, P264, P270, P271, P280, P281, P302+P352, P304+P340, P305+P351+P338, P308+P313, P312, P314, P321, P332+P313, P337+P313, P362, P403+P233, P405, P501
NFPA 704 (fire diamond)
NIOSH (US health exposure limits):
PEL (Permissible)
TWA 15 mg/m3 (total) TWA 5 mg/m3 (resp) [1]
REL (Recommended)
TWA 10 mg/m3 (total) TWA 5 mg/m3 (resp) [1]
IDLH (Immediate danger)
N.D. [1]
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Yes check.svgY  verify  (what is  Yes check.svgYX mark.svgN ?)

Silicon carbide (SiC), also known as carborundum ( /ˌkɑːrbəˈrʌndəm/ ), is a hard chemical compound containing silicon and carbon. A semiconductor, it occurs in nature as the extremely rare mineral moissanite, but has been mass-produced as a powder and crystal since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Large single crystals of silicon carbide can be grown by the Lely method and they can be cut into gems known as synthetic moissanite.


Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.

Natural occurrence

Moissanite single crystal ([?]1 mm in size) Moissanite-USGS-20-1001d-14x-.jpg
Moissanite single crystal (≈1 mm in size)

Naturally occurring moissanite is found in only minute quantities in certain types of meteorite, corundum deposits, and kimberlite. Virtually all the silicon carbide sold in the world, including moissanite jewels, is synthetic.

Natural moissanite was first found in 1893 as a small component of the Canyon Diablo meteorite in Arizona by Dr. Ferdinand Henri Moissan, after whom the material was named in 1905. [7] Moissan's discovery of naturally occurring SiC was initially disputed because his sample may have been contaminated by silicon carbide saw blades that were already on the market at that time. [8]

While rare on Earth, silicon carbide is remarkably common in space. It is a common form of stardust found around carbon-rich stars, and examples of this stardust have been found in pristine condition in primitive (unaltered) meteorites. The silicon carbide found in space and in meteorites is almost exclusively the beta-polymorph. Analysis of SiC grains found in the Murchison meteorite, a carbonaceous chondrite meteorite, has revealed anomalous isotopic ratios of carbon and silicon, indicating that these grains originated outside the solar system. [9]


Early experiments

Non-systematic, less-recognized and often unverified syntheses of silicon carbide include:

Wide-scale production

A replication of H. J. Round's LED experiments SiC LED historic.jpg
A replication of H. J. Round's LED experiments

Wide-scale production is credited to Edward Goodrich Acheson in 1890. [11] Acheson was attempting to prepare artificial diamonds when he heated a mixture of clay (aluminium silicate) and powdered coke (carbon) in an iron bowl. He called the blue crystals that formed carborundum, believing it to be a new compound of carbon and aluminium, similar to corundum. Moissan also synthesized SiC by several routes, including dissolution of carbon in molten silicon, melting a mixture of calcium carbide and silica, and by reducing silica with carbon in an electric furnace.

Acheson patented the method for making silicon carbide powder on February 28, 1893. [12] Acheson also developed the electric batch furnace by which SiC is still made today and formed the Carborundum Company to manufacture bulk SiC, initially for use as an abrasive. [13] In 1900 the company settled with the Electric Smelting and Aluminum Company when a judge's decision gave "priority broadly" to its founders "for reducing ores and other substances by the incandescent method". [14] It is said that Acheson was trying to dissolve carbon in molten corundum (alumina) and discovered the presence of hard, blue-black crystals which he believed to be a compound of carbon and corundum: hence carborundum. It may be that he named the material "carborundum" by analogy to corundum, which is another very hard substance (9 on the Mohs scale).

The first use of SiC was as an abrasive. This was followed by electronic applications. In the beginning of the 20th century, silicon carbide was used as a detector in the first radios. [15] In 1907 Henry Joseph Round produced the first LED by applying a voltage to a SiC crystal and observing yellow, green and orange emission at the cathode. The effect was later rediscovered by O. V. Losev in the Soviet Union in 1923. [16]


Synthetic SiC crystals ~3 mm in diameter SiC crystals.JPG
Synthetic SiC crystals ~3 mm in diameter
Two six-inch wafers made of silicon carbide SiC wafers 6inch.jpg
Two six-inch wafers made of silicon carbide

Because natural moissanite is extremely scarce, most silicon carbide is synthetic. Silicon carbide is used as an abrasive, as well as a semiconductor and diamond simulant of gem quality. The simplest process to manufacture silicon carbide is to combine silica sand and carbon in an Acheson graphite electric resistance furnace at a high temperature, between 1,600 °C (2,910 °F) and 2,500 °C (4,530 °F). Fine SiO2 particles in plant material (e.g. rice husks) can be converted to SiC by heating in the excess carbon from the organic material. [17] The silica fume, which is a byproduct of producing silicon metal and ferrosilicon alloys, can also be converted to SiC by heating with graphite at 1,500 °C (2,730 °F). [18]

The material formed in the Acheson furnace varies in purity, according to its distance from the graphite resistor heat source. Colorless, pale yellow and green crystals have the highest purity and are found closest to the resistor. The color changes to blue and black at greater distance from the resistor, and these darker crystals are less pure. Nitrogen and aluminium are common impurities, and they affect the electrical conductivity of SiC. [19]

Synthetic SiC Lely crystals Lely SiC Crystal.jpg
Synthetic SiC Lely crystals

Pure silicon carbide can be made by the Lely process, [20] in which SiC powder is sublimed into high-temperature species of silicon, carbon, silicon dicarbide (SiC2), and disilicon carbide (Si2C) in an argon gas ambient at 2500 °C and redeposited into flake-like single crystals, [21] sized up to 2 × 2 cm, at a slightly colder substrate. This process yields high-quality single crystals, mostly of 6H-SiC phase (because of high growth temperature).

A modified Lely process involving induction heating in graphite crucibles yields even larger single crystals of 4 inches (10 cm) in diameter, having a section 81 times larger compared to the conventional Lely process. [22]

Cubic SiC is usually grown by the more expensive process of chemical vapor deposition (CVD) of silane, hydrogen and nitrogen. [19] [23] Homoepitaxial and heteroepitaxial SiC layers can be grown employing both gas and liquid phase approaches. [24]

To form complexly shaped SiC, preceramic polymers can be used as precursors which form the ceramic product through pyrolysis at temperatures in the range 1000–1100 °C. [25] Precursor materials to obtain silicon carbide in such a manner include polycarbosilanes, poly(methylsilyne) and polysilazanes. [26] Silicon carbide materials obtained through the pyrolysis of preceramic polymers are known as polymer derived ceramics or PDCs. Pyrolysis of preceramic polymers is most often conducted under an inert atmosphere at relatively low temperatures. Relative to the CVD process, the pyrolysis method is advantageous because the polymer can be formed into various shapes prior to thermalization into the ceramic. [27] [28] [29] [30]

SiC can also be made into wafers by cutting a single crystal either using a diamond wire saw or by using a laser. SiC is a useful semiconductor used in power electronics. [31]

Structure and properties

Structure of major SiC polytypes.
Silicon carbide, image taken under a stereoscopic microscope. Silicon carbide, image taken under a stereoscopic microscope.jpg
Silicon carbide, image taken under a stereoscopic microscope.

Silicon carbide exists in about 250 crystalline forms. [32] Through inert atmospheric pyrolysis of preceramic polymers, silicon carbide in a glassy amorphous form is also produced. [33] The polymorphism of SiC is characterized by a large family of similar crystalline structures called polytypes. They are variations of the same chemical compound that are identical in two dimensions and differ in the third. Thus, they can be viewed as layers stacked in a certain sequence. [34]

Alpha silicon carbide (α-SiC) is the most commonly encountered polymorph, and is formed at temperatures greater than 1700 °C and has a hexagonal crystal structure (similar to Wurtzite). The beta modification (β-SiC), with a zinc blende crystal structure (similar to diamond), is formed at temperatures below 1700 °C. [35] Until recently, the beta form has had relatively few commercial uses, although there is now increasing interest in its use as a support for heterogeneous catalysts, owing to its higher surface area compared to the alpha form.

Properties of major SiC polytypes [5] [27]
Polytype3C (β)4H6H (α)
Crystal structureZinc blende (cubic)HexagonalHexagonal
Space group T2d-F43mC46v-P63mcC46v-P63mc
Pearson symbol cF8hP8hP12
Lattice constants (Å)4.35963.0730; 10.0533.0810; 15.12
Density (g/cm3)
Bandgap (eV)2.363.233.05
Bulk modulus (GPa)250220220
Thermal conductivity (W⋅m−1⋅K−1)

@ 300 K (see [36] [37] for temp. dependence)


Pure SiC is colorless. The brown to black color of the industrial product results from iron impurities. [38] The rainbow-like luster of the crystals is due to the thin-film interference of a passivation layer of silicon dioxide that forms on the surface.

The high sublimation temperature of SiC (approximately 2700 °C) makes it useful for bearings and furnace parts. Silicon carbide does not melt at any known temperature. It is also highly inert chemically. There is currently much interest in its use as a semiconductor material in electronics, where its high thermal conductivity, high electric field breakdown strength and high maximum current density make it more promising than silicon for high-powered devices. [39] SiC also has a very low coefficient of thermal expansion (4.0 × 10−6/K) and experiences no phase transitions that would cause discontinuities in thermal expansion. [19]

Electrical conductivity

Silicon carbide is a semiconductor, which can be doped n-type by nitrogen or phosphorus and p-type by beryllium, boron, aluminium, or gallium. [5] Metallic conductivity has been achieved by heavy doping with boron, aluminium or nitrogen.

Superconductivity has been detected in 3C-SiC:Al, 3C-SiC:B and 6H-SiC:B at similar temperatures ~1.5 K. [35] [40] A crucial difference is however observed for the magnetic field behavior between aluminium and boron doping: 3C-SiC:Al is type-II. In contrast, 3C-SiC:B is type-I, as is 6H-SiC:B. Thus the superconducting properties seem to depend more on dopant (B vs. Al) than on polytype (3C- vs 6H-). In an attempt to explain this dependence, it was noted that B substitutes at C sites in SiC, but Al substitutes at Si sites. Therefore, Al and B "see" different environments, in both polytypes. [41]


Abrasive and cutting tools

Cutting disks made of SiC Ultra-thin separated (Carborundum) disk.jpg
Cutting disks made of SiC

In the arts, silicon carbide is a popular abrasive in modern lapidary due to the durability and low cost of the material. In manufacturing, it is used for its hardness in abrasive machining processes such as grinding, honing, water-jet cutting and sandblasting. Particles of silicon carbide are laminated to paper to create sandpapers and the grip tape on skateboards. [42]

In 1982 an exceptionally strong composite of aluminium oxide and silicon carbide whiskers was discovered. Development of this laboratory-produced composite to a commercial product took only three years. In 1985, the first commercial cutting tools made from this alumina and silicon carbide whisker-reinforced composite were introduced into the market. [43]

Structural material

Silicon carbide is used for trauma plates of ballistic vests Soldier Plate Carrier System (SPCS).jpg
Silicon carbide is used for trauma plates of ballistic vests

In the 1980s and 1990s, silicon carbide was studied in several research programs for high-temperature gas turbines in Europe, Japan and the United States. The components were intended to replace nickel superalloy turbine blades or nozzle vanes. [44] However, none of these projects resulted in a production quantity, mainly because of its low impact resistance and its low fracture toughness. [45]

Like other hard ceramics (namely alumina and boron carbide), silicon carbide is used in composite armor (e.g. Chobham armor), and in ceramic plates in bulletproof vests. Dragon Skin, which was produced by Pinnacle Armor, used disks of silicon carbide. [46] Improved fracture toughness in SiC armor can be facilitated through the phenomenon of abnormal grain growth or AGG. The growth of abnormally long silicon carbide grains may serve to impart a toughening effect through crack-wake bridging, similar to whisker reinforcement. Similar AGG-toughening effects have been reported in Silicon nitride (Si3N4). [47]

Silicon carbide is used as a support and shelving material in high temperature kilns such as for firing ceramics, glass fusing, or glass casting. SiC kiln shelves are considerably lighter and more durable than traditional alumina shelves. [48]

In December 2015, infusion of silicon carbide nano-particles in molten magnesium was mentioned as a way to produce a new strong and plastic alloy suitable for use in aeronautics, aerospace, automobile and micro-electronics. [49]

Automobile parts

The Porsche Carrera GT's silicon carbide "carbon-ceramic" disk brake PCCB Brake Carrera GT.jpg
The Porsche Carrera GT's silicon carbide "carbon-ceramic" disk brake

Silicon-infiltrated carbon-carbon composite is used for high performance "ceramic" brake disks, as they are able to withstand extreme temperatures. The silicon reacts with the graphite in the carbon-carbon composite to become carbon-fiber-reinforced silicon carbide (C/SiC). These brake disks are used on some road-going sports cars, supercars, as well as other performance cars including the Porsche Carrera GT, the Bugatti Veyron, the Chevrolet Corvette ZR1, the McLaren P1, [50] Bentley, Ferrari, Lamborghini and some specific high-performance Audi cars. Silicon carbide is also used in a sintered form for diesel particulate filters. [51] It's also used as an oil additive[ dubious ][ clarification needed ] to reduce friction, emissions, and harmonics. [52] [53]

Foundry crucibles

SiC is used in crucibles for holding melting metal in small and large foundry applications. [54] [55]

Electric systems

The earliest electrical application of SiC was in lightning arresters in electric power systems. These devices must exhibit high resistance until the voltage across them reaches a certain threshold VT at which point their resistance must drop to a lower level and maintain this level until the applied voltage drops below VT. [56]

It was recognized early on[ when? ] that SiC had such a voltage-dependent resistance, and so columns of SiC pellets were connected between high-voltage power lines and the earth. When a lightning strike to the line raises the line voltage sufficiently, the SiC column will conduct, allowing strike current to pass harmlessly to the earth instead of along the power line. The SiC columns proved to conduct significantly at normal power-line operating voltages and thus had to be placed in series with a spark gap. This spark gap is ionized and rendered conductive when lightning raises the voltage of the power line conductor, thus effectively connecting the SiC column between the power conductor and the earth. Spark gaps used in lightning arresters are unreliable, either failing to strike an arc when needed or failing to turn off afterwards, in the latter case due to material failure or contamination by dust or salt. Usage of SiC columns was originally intended to eliminate the need for the spark gap in lightning arresters. Gapped SiC arresters were used for lightning-protection and sold under the GE and Westinghouse brand names, among others. The gapped SiC arrester has been largely displaced by no-gap varistors that use columns of zinc oxide pellets. [57]

Electronic circuit elements

Silicon carbide was the first commercially important semiconductor material. A crystal radio "carborundum" (synthetic silicon carbide) detector diode was patented by Henry Harrison Chase Dunwoody in 1906. It found much early use in shipboard receivers.

Power electronic devices

In 1993 the silicon carbide was considered a semiconductor in both research and early mass production providing advantages for fast, high-temperature and/or high-voltage devices. The first devices available were Schottky diodes, followed by junction-gate FETs and MOSFETs for high-power switching. Bipolar transistors and thyristors are currently[ when? ] developed. [39]

A major problem for SiC commercialization has been the elimination of defects: edge dislocations, screw dislocations (both hollow and closed core), triangular defects and basal plane dislocations. [58] As a result, devices made of SiC crystals initially displayed poor reverse blocking performance, though researchers have been tentatively finding solutions to improve the breakdown performance. [59] Apart from crystal quality, problems with the interface of SiC with silicon dioxide have hampered the development of SiC-based power MOSFETs and insulated-gate bipolar transistors. Although the mechanism is still unclear, nitriding has dramatically reduced the defects causing the interface problems. [60]

In 2008, the first commercial JFETs rated at 1200 V were introduced to the market, [61] followed in 2011 by the first commercial MOSFETs rated at 1200 V. JFETs are now available rated 650 V to 1700 V with resistance as low as 25 mΩ. [62] Beside SiC switches and SiC Schottky diodes (also Schottky barrier diode, SBD) in the popular TO-247 and TO-220 packages, companies started even earlier to implement the bare chips into their power electronic modules.

SiC SBD diodes found wide market spread being used in PFC circuits and IGBT power modules. [63] Conferences such as the International Conference on Integrated Power Electronics Systems (CIPS) report regularly about the technological progress of SiC power devices. Major challenges for fully unleashing the capabilities of SiC power devices are:

  • Gate drive: SiC devices often require gate drive voltage levels that are different from their silicon counterparts and may be even unsymmetric, for example, +20 V and −5 V. [64]
  • Packaging: SiC chips may have a higher power density than silicon power devices and are able to handle higher temperatures exceeding the silicon limit of 150 °C. New die attach technologies such as sintering are required to efficiently get the heat out of the devices and ensure a reliable interconnection. [65]

Beginning with Tesla Model 3 the inverters in the drive unit use 24 pairs of silicon carbide (SiC) MOSFET chips rated for 650 volts each. Silicon carbide in this instance gave Tesla a significant advantage over chips made of silicon in terms of size and weight. A number of automobile manufacturers are planning to incorporate silicon carbide into power electronic devices in their products. A significant increase in production of silicon carbide is projected, beginning with a large plant planned by Wolfspeed in upstate New York. [66] [67]

Ultraviolet LED Uv-LED.jpg
Ultraviolet LED


The phenomenon of electroluminescence was discovered in 1907 using silicon carbide and the first commercial LEDs were based on SiC. Yellow LEDs made from 3C-SiC were manufactured in the Soviet Union in the 1970s [68] and blue LEDs (6H-SiC) worldwide in the 1980s. [69]

Carbide LED production soon stopped when a different material, gallium nitride, showed 10–100 times brighter emission. This difference in efficiency is due to the unfavorable indirect bandgap of SiC, whereas GaN has a direct bandgap which favors light emission. However, SiC is still one of the important LED components: It is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs. [69]


The low thermal expansion coefficient, high hardness, rigidity and thermal conductivity make silicon carbide a desirable mirror material for astronomical telescopes. The growth technology (chemical vapor deposition) has been scaled up to produce disks of polycrystalline silicon carbide up to 3.5 m (11 ft) in diameter, and several telescopes like the Herschel Space Telescope are already equipped with SiC optics, [70] [71] as well the Gaia space observatory spacecraft subsystems are mounted on a rigid silicon carbide frame, which provides a stable structure that will not expand or contract due to heat.

Thin filament pyrometry

Test flame and glowing SiC fibers. The flame is about 7 cm (2.8 in) tall. SiCpyrometer.jpg
Test flame and glowing SiC fibers. The flame is about 7 cm (2.8 in) tall.

Silicon carbide fibers are used to measure gas temperatures in an optical technique called thin filament pyrometry. It involves the placement of a thin filament in a hot gas stream. Radiative emissions from the filament can be correlated with filament temperature. Filaments are SiC fibers with a diameter of 15 micrometers, about one fifth that of a human hair. Because the fibers are so thin, they do little to disturb the flame and their temperature remains close to that of the local gas. Temperatures of about 800–2500 K can be measured. [72] [73]

Heating elements

References to silicon carbide heating elements exist from the early 20th century when they were produced by Acheson's Carborundum Co. in the U.S. and EKL in Berlin. Silicon carbide offered increased operating temperatures compared with metallic heaters. Silicon carbide elements are used today in the melting of glass and non-ferrous metal, heat treatment of metals, float glass production, production of ceramics and electronics components, igniters in pilot lights for gas heaters, etc. [74]

Heat shielding

The outer thermal protection layer of NASA's LOFTID inflatable heat shield incorporates a woven ceramic made from silicon carbide, with fiber of such small diameter that it can be bundled and spun into a yarn. [75]

Nuclear fuel particles and cladding

Silicon carbide is an important material in TRISO-coated fuel particles, the type of nuclear fuel found in high temperature gas cooled reactors such as the Pebble Bed Reactor. A layer of silicon carbide gives coated fuel particles structural support and is the main diffusion barrier to the release of fission products. [76]

Silicon carbide composite material has been investigated for use as a replacement for Zircaloy cladding in light water reactors. One of the reasons for this investigation is that, Zircaloy experiences hydrogen embrittlement as a consequence of the corrosion reaction with water. This produces a reduction in fracture toughness with increasing volumetric fraction of radial hydrides. This phenomenon increases drastically with increasing temperature to the detriment of the material. [77] Silicon carbide cladding does not experience this same mechanical degradation, but instead retains strength properties with increasing temperature. The composite consists of SiC fibers wrapped around a SiC inner layer and surrounded by an SiC outer layer. [78] Problems have been reported with the ability to join the pieces of the SiC composite. [79]


A moissanite engagement ring Moissanite ring natural light.jpg
A moissanite engagement ring

As a gemstone used in jewelry, silicon carbide is called "synthetic moissanite" or just "moissanite" after the mineral name. Moissanite is similar to diamond in several important respects: it is transparent and hard (9–9.5 on the Mohs scale, compared to 10 for diamond), with a refractive index between 2.65 and 2.69 (compared to 2.42 for diamond). Moissanite is somewhat harder than common cubic zirconia. Unlike diamond, moissanite can be strongly birefringent. For this reason, moissanite jewels are cut along the optic axis of the crystal to minimize birefringent effects. It is lighter (density 3.21 g/cm3 vs. 3.53 g/cm3), and much more resistant to heat than diamond. This results in a stone of higher luster, sharper facets, and good resilience. Loose moissanite stones may be placed directly into wax ring moulds for lost-wax casting, as can diamond, [80] as moissanite remains undamaged by temperatures up to 1,800 °C (3,270 °F). Moissanite has become popular as a diamond substitute, and may be misidentified as diamond, since its thermal conductivity is closer to diamond than any other substitute. Many thermal diamond-testing devices cannot distinguish moissanite from diamond, but the gem is distinct in its birefringence and a very slight green or yellow fluorescence under ultraviolet light. Some moissanite stones also have curved, string-like inclusions, which diamonds never have. [81]

Steel production

Piece of silicon carbide used in steel making Silicon carbide chunk.jpg
Piece of silicon carbide used in steel making

Silicon carbide, dissolved in a basic oxygen furnace used for making steel, acts as a fuel. The additional energy liberated allows the furnace to process more scrap with the same charge of hot metal. It can also be used to raise tap temperatures and adjust the carbon and silicon content. Silicon carbide is cheaper than a combination of ferrosilicon and carbon, produces cleaner steel and lower emissions due to low levels of trace elements, has a low gas content, and does not lower the temperature of steel. [82]

Catalyst support

The natural resistance to oxidation exhibited by silicon carbide, as well as the discovery of new ways to synthesize the cubic β-SiC form, with its larger surface area, has led to significant interest in its use as a heterogeneous catalyst support. This form has already been employed as a catalyst support for the oxidation of hydrocarbons, such as n-butane, to maleic anhydride. [83] [84]

Carborundum printmaking

Silicon carbide is used in carborundum printmaking – a collagraph printmaking technique. Carborundum grit is applied in a paste to the surface of an aluminium plate. When the paste is dry, ink is applied and trapped in its granular surface, then wiped from the bare areas of the plate. The ink plate is then printed onto paper in a rolling-bed press used for intaglio printmaking. The result is a print of painted marks embossed into the paper.

Carborundum grit is also used in stone Lithography. Its uniform particle size allows it to be used to "Grain" a stone which removes the previous image. In a similar process to sanding, coarser grit Carborundum is applied to the stone and worked with a Levigator, then gradually finer and finer grit is applied until the stone is clean. This creates a grease sensitive surface. [85]

Graphene production

Silicon carbide can be used in the production of graphene because of its chemical properties that promote the epitaxial production of graphene on the surface of SiC nanostructures.

When it comes to its production, silicon is used primarily as a substrate to grow the graphene. But there are actually several methods that can be used to grow the graphene on the silicon carbide. The confinement controlled sublimation (CCS) growth method consists of a SiC chip that is heated under vacuum with graphite. Then the vacuum is released very gradually to control the growth of graphene. This method yields the highest quality graphene layers. But other methods have been reported to yield the same product as well.

Another way of growing graphene would be thermally decomposing SiC at a high temperature within a vacuum. [86] But this method turns out to yield graphene layers that contain smaller grains within the layers. [87] So there have been efforts to improve the quality and yield of graphene. One such method is to perform ex situ graphitization of silicon terminated SiC in an atmosphere consisting of argon. This method has proved to yield layers of graphene with larger domain sizes than the layer that would be attainable via other methods. This new method can be very viable to make higher quality graphene for a multitude of technological applications.

When it comes to understanding how or when to use these methods of graphene production, most of them mainly produce or grow this graphene on the SiC within a growth enabling environment. It is utilized most often at rather higher temperatures (such as 1300 °C) because of SiC thermal properties. [88] However, there have been certain procedures that have been performed and studied that could potentially yield methods that use lower temperatures to help manufacture graphene. More specifically this different approach to graphene growth has been observed to produce graphene within a temperature environment of around 750 °C. This method entails the combination of certain methods like chemical vapor deposition (CVD) and surface segregation. And when it comes to the substrate, the procedure would consist of coating a SiC substrate with thin films of a transition metal. And after the rapid heat treating of this substance, the carbon atoms would then become more abundant at the surface interface of the transition metal film which would then yield graphene. And this process was found to yield graphene layers that were more continuous throughout the substrate surface. [89]

Quantum physics

Silicon carbide can host point defects in the crystal lattice which are known as color centers. These defects can produce single photons on demand and thus serve as a platform for single-photon source. [90] Such a device is a fundamental resource for many emerging applications of quantum information science. If one pumps a color center via an external optical source or electrical current, the color center will be brought to the excited state and then relax with the emission of one photon. [91] [92]

One well known point defect in silicon carbide is the divacancy which has a similar electronic structure as the nitrogen-vacancy center in diamond. In 4H-SiC, the divacancy has four different configurations which correspond to four zero-phonon lines (ZPL). These ZPL values are written using the notation VSi-VC and the unit eV: hh(1.095), kk(1.096), kh(1.119), and hk(1.150). [93]

Fishing rod guides

Silicon carbide is used in the manufacturing of fishing guides because of its durability and wear resistance. [94] Silicon Carbide rings are fit into a guide frame, typically made from stainless steel or titanium which keep the line from touching the rod blank. The rings provide a low friction surface which improves casting distance while providing adequate hardness that prevents abrasion from braided fishing line. [95]

See also

Related Research Articles

<span class="mw-page-title-main">Boron nitride</span> Refractory compound of boron and nitrogen with formula BN

Boron nitride is a thermally and chemically resistant refractory compound of boron and nitrogen with the chemical formula BN. It exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form corresponding to graphite is the most stable and soft among BN polymorphs, and is therefore used as a lubricant and an additive to cosmetic products. The cubic variety analogous to diamond is called c-BN; it is softer than diamond, but its thermal and chemical stability is superior. The rare wurtzite BN modification is similar to lonsdaleite but slightly softer than the cubic form.

<span class="mw-page-title-main">Chemical vapor deposition</span> Method used to apply surface coatings

Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.

<span class="mw-page-title-main">Graphite</span> Allotrope of carbon, mineral, substance

Graphite is a crystalline form of the element carbon. It consists of stacked layers of graphene. Graphite occurs naturally and is the most stable form of carbon under standard conditions. Synthetic and natural graphite are consumed on large scale for uses in pencils, lubricants, and electrodes. Under high pressures and temperatures it converts to diamond. It is a good conductor of both heat and electricity.

<span class="mw-page-title-main">Moissanite</span> Silicon carbide mineral

Moissanite is naturally occurring silicon carbide and its various crystalline polymorphs. It has the chemical formula SiC and is a rare mineral, discovered by the French chemist Henri Moissan in 1893. Silicon carbide is useful for commercial and industrial applications due to its hardness, optical properties and thermal conductivity.

Wide-bandgap semiconductors are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators.

<span class="mw-page-title-main">Gallium nitride</span> Chemical compound

Gallium nitride is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.

<span class="mw-page-title-main">Synthetic diamond</span> Diamond created by controlled processes

Lab-grown diamond is diamond that is produced in a controlled technological process. Unlike diamond simulants, synthetic diamonds are composed of the same material as naturally formed diamonds – pure carbon crystallized in an isotropic 3D form – and share identical chemical and physical properties.

<span class="mw-page-title-main">Allotropes of carbon</span> Materials made only out of carbon

Carbon is capable of forming many allotropes due to its valency. Well-known forms of carbon include diamond and graphite. In recent decades, many more allotropes have been discovered and researched, including ball shapes such as buckminsterfullerene and sheets such as graphene. Larger-scale structures of carbon include nanotubes, nanobuds and nanoribbons. Other unusual forms of carbon exist at very high temperatures or extreme pressures. Around 500 hypothetical 3‑periodic allotropes of carbon are known at the present time, according to the Samara Carbon Allotrope Database (SACADA).

<span class="mw-page-title-main">Nanoelectromechanical systems</span>

Nanoelectromechanical systems (NEMS) are a class of devices integrating electrical and mechanical functionality on the nanoscale. NEMS form the next logical miniaturization step from so-called microelectromechanical systems, or MEMS devices. NEMS typically integrate transistor-like nanoelectronics with mechanical actuators, pumps, or motors, and may thereby form physical, biological, and chemical sensors. The name derives from typical device dimensions in the nanometer range, leading to low mass, high mechanical resonance frequencies, potentially large quantum mechanical effects such as zero point motion, and a high surface-to-volume ratio useful for surface-based sensing mechanisms. Applications include accelerometers and sensors to detect chemical substances in the air.

<span class="mw-page-title-main">Material properties of diamond</span>

Diamond is the allotrope of carbon in which the carbon atoms are arranged in the specific type of cubic lattice called diamond cubic. It is a crystal that is transparent to opaque and which is generally isotropic. Diamond is the hardest naturally occurring material known. Yet, due to important structural brittleness, bulk diamond's toughness is only fair to good. The precise tensile strength of bulk diamond is little known; however, compressive strength up to 60 GPa has been observed, and it could be as high as 90–100 GPa in the form of micro/nanometer-sized wires or needles, with a corresponding maximum tensile elastic strain in excess of 9%. The anisotropy of diamond hardness is carefully considered during diamond cutting. Diamond has a high refractive index (2.417) and moderate dispersion (0.044) properties that give cut diamonds their brilliance. Scientists classify diamonds into four main types according to the nature of crystallographic defects present. Trace impurities substitutionally replacing carbon atoms in a diamond's crystal structure, and in some cases structural defects, are responsible for the wide range of colors seen in diamond. Most diamonds are electrical insulators and extremely efficient thermal conductors. Unlike many other minerals, the specific gravity of diamond crystals (3.52) has rather small variation from diamond to diamond.

<span class="mw-page-title-main">Glassy carbon</span> Allotrope of carbon

Glass-like carbon, often called glassy carbon or vitreous carbon, is a non-graphitizing, or nongraphitizable, carbon which combines glassy and ceramic properties with those of graphite. The most important properties are high temperature resistance, hardness (7 Mohs), low density, low electrical resistance, low friction, low thermal resistance, extreme resistance to chemical attack, and impermeability to gases and liquids. Glassy carbon is widely used as an electrode material in electrochemistry, for high-temperature crucibles, and as a component of some prosthetic devices. It can be fabricated in different shapes, sizes and sections.

<span class="mw-page-title-main">Solid</span> State of matter

Solid is one of the four fundamental states of matter. The molecules in a solid are closely packed together and contain the least amount of kinetic energy. A solid is characterized by structural rigidity and resistance to a force applied to the surface. Unlike a liquid, a solid object does not flow to take on the shape of its container, nor does it expand to fill the entire available volume like a gas. The atoms in a solid are bound to each other, either in a regular geometric lattice, or irregularly. Solids cannot be compressed with little pressure whereas gases can be compressed with little pressure because the molecules in a gas are loosely packed.

As the devices continue to shrink further into the sub-100 nm range following the trend predicted by Moore’s law, the topic of thermal properties and transport in such nanoscale devices becomes increasingly important. Display of great potential by nanostructures for thermoelectric applications also motivates the studies of thermal transport in such devices. These fields, however, generate two contradictory demands: high thermal conductivity to deal with heating issues in sub-100 nm devices and low thermal conductivity for thermoelectric applications. These issues can be addressed with phonon engineering, once nanoscale thermal behaviors have been studied and understood.

Carbide-derived carbon (CDC), also known as tunable nanoporous carbon, is the common term for carbon materials derived from carbide precursors, such as binary (e.g. SiC, TiC), or ternary carbides, also known as MAX phases (e.g., Ti2AlC, Ti3SiC2). CDCs have also been derived from polymer-derived ceramics such as Si-O-C or Ti-C, and carbonitrides, such as Si-N-C. CDCs can occur in various structures, ranging from amorphous to crystalline carbon, from sp2- to sp3-bonded, and from highly porous to fully dense. Among others, the following carbon structures have been derived from carbide precursors: micro- and mesoporous carbon, amorphous carbon, carbon nanotubes, onion-like carbon, nanocrystalline diamond, graphene, and graphite. Among carbon materials, microporous CDCs exhibit some of the highest reported specific surface areas (up to more than 3000 m2/g). By varying the type of the precursor and the CDC synthesis conditions, microporous and mesoporous structures with controllable average pore size and pore size distributions can be produced. Depending on the precursor and the synthesis conditions, the average pore size control can be applied at sub-Angstrom accuracy. This ability to precisely tune the size and shapes of pores makes CDCs attractive for selective sorption and storage of liquids and gases (e.g., hydrogen, methane, CO2) and the high electric conductivity and electrochemical stability allows these structures to be effectively implemented in electrical energy storage and capacitive water desalinization.

AlSiC, pronounced "alsick", is a metal matrix composite consisting of aluminium matrix with silicon carbide particles. It has high thermal conductivity, and its thermal expansion can be adjusted to match other materials, e.g. silicon and gallium arsenide chips and various ceramics. It is chiefly used in microelectronics as substrate for power semiconductor devices and high density multi-chip modules, where it aids with removal of waste heat.

<span class="mw-page-title-main">Acheson process</span>

The Acheson process was invented by Edward Goodrich Acheson to synthesize silicon carbide (SiC) and graphite.

Potential graphene applications include lightweight, thin, and flexible electric/photonics circuits, solar cells, and various medical, chemical and industrial processes enhanced or enabled by the use of new graphene materials.

<span class="mw-page-title-main">Amorphous silicon</span> Non-crystalline silicon

Amorphous silicon (a-Si) is the non-crystalline form of silicon used for solar cells and thin-film transistors in LCDs.

Epitaxial graphene growth on silicon carbide (SiC) by thermal decomposition is a method to produce large-scale few-layer graphene (FLG). Graphene is one of the most promising nanomaterials for the future because of its various characteristics, like strong stiffness and high electric and thermal conductivity. Still, reproducible production of Graphene is difficult, thus many different techniques have been developed. The main advantage of epitaxial graphene growth on silicon carbide over other techniques is to obtain graphene layers directly on a semiconducting or semi-insulating substrate which is commercially available.

Francesca Iacopi is an engineer, researcher and an academic. She specializes in materials and nanoelectronics engineering and is a professor at the University of Technology Sydney. She is a chief investigator of the ARC Centre of Excellence in Transformative Meta-Optical Systems, a Fellow of the Institution of Engineers Australia, and a senior member of Institute of Electrical and Electronics Engineers.


  1. 1 2 3 4 NIOSH Pocket Guide to Chemical Hazards. "#0555". National Institute for Occupational Safety and Health (NIOSH).
  2. 1 2 Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 4.88. ISBN   1-4398-5511-0.
  3. Pubchem. "Silicon carbide". Retrieved 2018-11-27.
  4. Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 4.135. ISBN   1-4398-5511-0.
  5. 1 2 3 "Properties of Silicon Carbide (SiC)". Ioffe Institute. Retrieved 2009-06-06.
  6. "C&L Inventory". Retrieved 12 December 2021.
  7. Moissan, Henri (1904). "Nouvelles recherches sur la météorité de Cañon Diablo". Comptes rendus . 139: 773–86.
  8. Di Pierro S.; Gnos E.; Grobety B.H.; Armbruster T.; Bernasconi S.M. & Ulmer P. (2003). "Rock-forming moissanite (natural α-silicon carbide)". American Mineralogist. 88 (11–12): 1817–21. Bibcode:2003AmMin..88.1817D. doi:10.2138/am-2003-11-1223. S2CID   128600868.
  9. Kelly, Jim. "The Astrophysical Nature of Silicon Carbide". University College London. Archived from the original on May 4, 2017. Retrieved 2009-06-06.
  10. Weimer, A. W. (1997). Carbide, nitride, and boride materials synthesis and processing. Springer. p. 115. ISBN   978-0-412-54060-8.
  11. Encyclopædia Britannica,
  12. Acheson, G. (1893) U.S. Patent 492,767 "Production of artificial crystalline carbonaceous material"
  13. "The Manufacture of Carborundum- a New Industry". Scientific American . April 7, 1894. Archived from the original on January 23, 2009. Retrieved 2009-06-06.
  14. Mabery, Charles F. (1900). "Notes, On Carborundum". Journal of the American Chemical Society. XXII (Part II): 706–707. doi:10.1021/ja02048a014 . Retrieved 2007-10-28.
  15. Dunwoody, Henry H.C. (1906) U.S. Patent 837,616 Wireless telegraph system (silicon carbide detector)
  16. Hart, Jeffrey A.; Stefanie Ann Lenway; Thomas Murtha. "A History of Electroluminescent Displays".
  17. Vlasov, A.S.; et al. (1991). "Obtaining silicon carbide from rice husks". Refractories and Industrial Ceramics. 32 (9–10): 521–523. doi:10.1007/bf01287542. S2CID   135784055.
  18. Zhong, Y.; Shaw, Leon L.; Manjarres, Misael & Zawrah, Mahmoud F. (2010). "Synthesis of Silicon Carbide Nanopowder Using Silica Fume". Journal of the American Ceramic Society. 93 (10): 3159–3167. doi:10.1111/j.1551-2916.2010.03867.x.
  19. 1 2 3 Harris, Gary Lynn (1995). Properties of silicon carbide. IET. p. 19; 170–180. ISBN   978-0-85296-870-3.
  20. Lely, Jan Anthony (1955). "Darstellung von Einkristallen von Silicium Carbid und Beherrschung von Art und Menge der eingebauten Verunreinigungen". Berichte der Deutschen Keramischen Gesellschaft. 32: 229–236.
  21. Lely SiC Wafers. Retrieved on 2013-05-04.
  22. Ohtani, N.; et al. (2001). Nippon Steel Technical Report no. 84 : Large high-quality silicon carbide substrates (PDF). Archived from the original (PDF) on 2010-12-17.
  23. Byrappa, K.; Ohachi, T. (2003). Crystal growth technology. Springer. pp. 180–200. ISBN   978-3-540-00367-0.
  24. Bakin, Andrey S. (2006). "SiC Homoepitaxy and Heteroepitaxy". In M. Shur; S. Rumyantsev; M. Levinshtein (eds.). SiC materials and devices. Vol. 1. World Scientific. pp. 43–76. ISBN   978-981-256-835-9.
  25. AM of Ceramics from Preceramic Polymers Published in Additive Manufacturing 2019, vol. 27 pp 80-90
  26. Europe Makes Ceramics Preceramics
  27. 1 2 Park, Yoon-Soo (1998). SiC materials and devices. Academic Press. pp. 20–60. ISBN   978-0-12-752160-2.
  28. Pitcher, M. W.; Joray, S. J.; Bianconi, P. A. (2004). "Smooth Continuous Films of Stoichiometric Silicon Carbide from Poly(methylsilyne)". Advanced Materials. 16 (8): 706–709. Bibcode:2004AdM....16..706P. doi:10.1002/adma.200306467. S2CID   97161599.
  29. Bunsell, A. R.; Piant, A. (2006). "A review of the development of three generations of small diameter silicon carbide fibres". Journal of Materials Science. 41 (3): 823–839. Bibcode:2006JMatS..41..823B. doi:10.1007/s10853-006-6566-z. S2CID   135586321.
  30. Laine, Richard M.; Babonneau, Florence (1993). "Preceramic polymer routes to silicon carbide". Chemistry of Materials. 5 (3): 260–279. doi:10.1021/cm00027a007.
  31. "KABRA|DISCO Corporation".
  32. Cheung, Rebecca (2006). Silicon carbide microelectromechanical systems for harsh environments. Imperial College Press. p. 3. ISBN   978-1-86094-624-0.
  33. Additive Manufacturing of Ceramics from Preceramic Polymers Published in Additive Manufacturing 2019, vol. 27 pp 80-90
  34. Morkoç, H.; Strite, S.; Gao, G. B.; Lin, M. E.; Sverdlov, B.; Burns, M. (1994). "Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies". Journal of Applied Physics. 76 (3): 1363. Bibcode:1994JAP....76.1363M. doi:10.1063/1.358463.
  35. 1 2 Muranaka, T.; Kikuchi, Yoshitake; Yoshizawa, Taku; Shirakawa, Naoki; Akimitsu, Jun (2008). "Superconductivity in carrier-doped silicon carbide". Sci. Technol. Adv. Mater. 9 (4): 044204. Bibcode:2008STAdM...9d4204M. doi:10.1088/1468-6996/9/4/044204. PMC   5099635 . PMID   27878021.
  36. Silicon Carbide. Thermal properties. Ioffe Institute Semiconductors Database.
  37. Zheng, Qiye; Li, Chunhua; Rai, Akash; Leach, Jacob H.; Broido, David A.; Cahill, David G. (2019-01-03). "Thermal conductivity of GaN, $^{71}\mathrm{GaN}$, and SiC from 150 K to 850 K". Physical Review Materials. 3 (1): 014601. doi: 10.1103/PhysRevMaterials.3.014601 . S2CID   139945430.
  38. "Adept Armor - Silicon Carbide". ADEPT. Retrieved 21 March 2023.
  39. 1 2 Bhatnagar, M.; Baliga, B.J. (March 1993). "Comparison of 6H-SiC, 3C-SiC, and Si for power devices". IEEE Transactions on Electron Devices. 40 (3): 645–655. Bibcode:1993ITED...40..645B. doi:10.1109/16.199372.
  40. Kriener, M.; Muranaka, Takahiro; Kato, Junya; Ren, Zhi-An; Akimitsu, Jun; Maeno, Yoshiteru (2008). "Superconductivity in heavily boron-doped silicon carbide". Sci. Technol. Adv. Mater. 9 (4): 044205. arXiv: 0810.0056 . Bibcode:2008STAdM...9d4205K. doi:10.1088/1468-6996/9/4/044205. PMC   5099636 . PMID   27878022.
  41. Yanase, Y. & Yorozu, N. (2008). "Superconductivity in compensated and uncompensated semiconductors". Sci. Technol. Adv. Mater. 9 (4): 044201. Bibcode:2008STAdM...9d4201Y. doi:10.1088/1468-6996/9/4/044201. PMC   5099632 . PMID   27878018.
  42. Fuster, Marco A. (1997) "Skateboard grip tape", U.S. Patent 5,622,759
  43. Bansal, Narottam P. (2005). Handbook of ceramic composites. Springer. p. 312. ISBN   978-1-4020-8133-0.
  44. "Production of Silicon Carbide".
  45. "Ceramics for turbine engines". Archived from the original on 2009-04-06. Retrieved 2009-06-06.
  46. "Dragon Skin – Most Protective Body Armor – Lightweight". Future Firepower. Archived from the original on 2012-02-17. Retrieved 2009-06-06.
  47. Abnormal Grain Growth in Journal of Crystal Growth 2012, Volume 359, Pages 83-91
  48. "Silicon Carbide". Ceramic Arts Daily.
  49. UCLA researchers create exceptionally strong and lightweight new metal
  50. "Top 10 Fast Cars". Archived from the original on 2009-03-26. Retrieved 2009-06-06.
  51. O'Sullivan, D.; Pomeroy, M.J.; Hampshire, S.; Murtagh, M.J. (2004). "Degradation resistance of silicon carbide diesel particulate filters to diesel fuel ash deposits". MRS Proceedings. 19 (10): 2913–2921. Bibcode:2004JMatR..19.2913O. doi:10.1557/JMR.2004.0373.
  52. "SiC Lubrication". Cerma.
  53. Studt, P. (1987). "Influence of lubricating oil additives on friction of ceramics under conditions of boundary lubrication". Wear. 115 (1–2): 185–191. doi:10.1016/0043-1648(87)90208-0.
  54. Friedrichs, Peter; Kimoto, Tsunenobu; Ley, Lothar; Pensl, Gerhard (2011). Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications. John Wiley & Sons. pp. 49–. ISBN   978-3-527-62906-0.
  55. Brown, John (1999). Foseco Non-Ferrous Foundryman's Handbook. Butterworth-Heinemann. pp. 52–. ISBN   978-0-08-053187-8.
  56. Whitaker, Jerry C. (2005). The electronics handbook. CRC Press. p. 1108. ISBN   978-0-8493-1889-4.
  57. Bayliss, Colin R. (1999). Transmission and distribution electrical engineering. Newnes. p. 250. ISBN   978-0-7506-4059-6.
  58. Chen, H.; Raghothamachar, Balaji; Vetter, William; Dudley, Michael; Wang, Y.; Skromme, B.J. (2006). "Effects of defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer". Mater. Res. Soc. Symp. Proc. 911: 169. doi:10.1557/PROC-0911-B12-03.
  59. Madar, Roland (26 August 2004). "Materials science: Silicon carbide in contention". Nature. 430 (7003): 974–975. Bibcode:2004Natur.430..974M. doi:10.1038/430974a. PMID   15329702. S2CID   4328365.
  60. Chen, Z.; Ahyi, A.C.; Zhu, X.; Li, M.; Isaacs-Smith, T.; Williams, J.R.; Feldman, L.C. (2010). "MOS Characteristics of C-Face 4H-SiC". J. Of Elec. Mat. 39 (5): 526–529. Bibcode:2010JEMat..39..526C. doi:10.1007/s11664-010-1096-5. S2CID   95074081.
  61. "At 1200 V and 45 milliohms, SemiSouth introduces the industry's lowest resistance SiC power transistor for efficient power management". Reuters (Press release). 5 May 2011. Archived from the original on 15 March 2016.
  62. "SiC JFETs Archives". United Silicon Carbide Inc. Retrieved 2021-01-11.
  63. "Cree launches industry's first commercial silicon carbide power MOSFET; destined to replace silicon devices in high-voltage (≥ 1200 V) power electronics" (Press release). Cree. 17 January 2011.
  64. Meißer, Michael (2013). Resonant Behaviour of Pulse Generators for the Efficient Drive of Optical Radiation Sources Based on Dielectric Barrier Discharges. KIT Scientific Publishing. p. 94. ISBN   978-3-7315-0083-4.
  65. Horio, Masafumi; Iizuka, Yuji; Ikeda, Yoshinari (2012). "Packaging Technologies for SiC Power Modules" (PDF). Fuji Electric Review. 58 (2): 75–78.
  66. Barbarini, Elena (June 25, 2018). STMicroelectronics SiC Module in Tesla Model3 Inverter (PDF) (Report). SystemPlus Consulting. Archived (PDF) from the original on December 27, 2020. Retrieved September 20, 2018. full SiC power module, in its Model 3. … STMicroelectronics … Tesla inverter … 24 1-in-1 power modules … module contains two SiC MOSFETs
  67. Amos Zeeberg (May 16, 2022). "What's Down the Road for Silicon?: Meet the new materials overpowering the electric economy". The New York Times. Retrieved May 17, 2022.
  68. Klipstein, Don. "Yellow SiC LED" . Retrieved 6 June 2009.
  69. 1 2 Stringfellow, Gerald B. (1997). High brightness light emitting diodes. Academic Press. pp. 48, 57, 425. ISBN   978-0-12-752156-5.
  70. "The largest telescope mirror ever put into space". European Space Agency. Retrieved 2009-06-06.
  71. Petrovsky, Gury T.; Tolstoy, Michael N.; Lubarsky, Sergey V.; Khimitch, Yuri P.; Robb, Paul N.; Tolstoy; Lubarsky; Khimitch; Robb (1994). Stepp, Larry M. (ed.). "2.7-meter-diameter silicon carbide primary mirror for the SOFIA telescope". Proc. SPIE. Advanced Technology Optical Telescopes V. 2199: 263. Bibcode:1994SPIE.2199..263P. doi:10.1117/12.176195. S2CID   120854083.{{cite journal}}: CS1 maint: multiple names: authors list (link)
  72. "Thin-Filament Pyrometry Developed for Measuring Temperatures in Flames". NASA. Archived from the original on 2012-03-15. Retrieved 2009-06-06.{{cite news}}: CS1 maint: bot: original URL status unknown (link)
  73. Maun, Jignesh D.; Sunderland, P. B.; Urban, D. L. (2007). "Thin-filament pyrometry with a digital still camera" (PDF). Applied Optics. 46 (4): 483–8. Bibcode:2007ApOpt..46..483M. doi:10.1364/AO.46.000483. hdl: 1903/3602 . PMID   17230239.
  74. Deshmukh, Yeshvant V. (2005). Industrial heating: principles, techniques, materials, applications, and design. CRC Press. pp. 383–393. ISBN   978-0-8493-3405-4.
  75. "NASA Inflatable Heat Shield Finds Strength in Flexibility". NASA. Archived from the original on 2022-11-10. Retrieved 2022-11-10.{{cite news}}: CS1 maint: bot: original URL status unknown (link)
  76. López-Honorato, E.; Tan, J.; Meadows, P. J.; Marsh, G.; Xiao, P. (2009). "TRISO coated fuel particles with enhanced SiC properties". Journal of Nuclear Materials. 392 (2): 219–224. Bibcode:2009JNuM..392..219L. doi:10.1016/j.jnucmat.2009.03.013.
  77. Bertolino, Meyer, G. (2002). "Degradation of the mechanical properties of Zircaloy-4 due to hydrogen embrittlement". Journal of Alloys and Compounds. 330–332: 408–413. doi:10.1016/S0925-8388(01)01576-6.
  78. Carpenter, David; Ahn, K.; Kao, S.P.; Hejzlar, Pavel; Kazimi, Mujid S. "Assessment of Silicon Carbide Cladding for High Performance Light Water Reactors". Nuclear Fuel Cycle Program, Volume MIT-NFC-TR-098 (2007). Archived from the original on 2012-04-25. Retrieved 2011-10-13.
  79. Ames, Nate (June 17, 2010). "SiC Fuel Cladding". Nuclear Fabrication Consortium, Archived from the original on April 25, 2012. Retrieved 2011-10-13.
  80. Teague, Tyler. Casting Metal Directly onto Stones, Jett Industries
  81. O'Donoghue, M. (2006). Gems. Elsevier. p. 89. ISBN   978-0-7506-5856-0.
  82. "Silicon carbide (steel industry)". Archived from the original on 2012-02-04. Retrieved 2009-06-06.
  83. Rase, Howard F. (2000). Handbook of commercial catalysts: heterogeneous catalysts. CRC Press. p. 258. ISBN   978-0-8493-9417-1.
  84. Singh, S. K.; Parida, K. M.; Mohanty, B. C.; Rao, S. B. (1995). "High surface area silicon carbide from rice husk: A support material for catalysts". Reaction Kinetics and Catalysis Letters. 54 (1): 29–34. doi:10.1007/BF02071177. S2CID   95550450.
  85. "Printmaking". Bircham Gallery, Retrieved 2009-07-31.
  86. Ruan, Ming; Hu, Yike; Guo, Zelei; Dong, Rui; Palmer, James; Hankinson, John; Berger, Claire; Heer, Walt A. de (December 2012). "Epitaxial graphene on silicon carbide: Introduction to structured graphene" (PDF). MRS Bulletin. 37 (12): 1138–1147. doi:10.1557/mrs.2012.231. ISSN   0883-7694. S2CID   40188237.
  87. Emtsev, Konstantin V.; Bostwick, Aaron; Horn, Karsten; Jobst, Johannes; Kellogg, Gary L.; Ley, Lothar; McChesney, Jessica L.; Ohta, Taisuke; Reshanov, Sergey A. (2009-02-08). "Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide". Nature Materials. 8 (3): 203–207. Bibcode:2009NatMa...8..203E. doi:10.1038/nmat2382. hdl: 11858/00-001M-0000-0010-FA05-E . ISSN   1476-1122. PMID   19202545.
  88. de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna (July 2007). "Epitaxial graphene". Solid State Communications. 143 (1–2): 92–100. arXiv: 0704.0285 . Bibcode:2007SSCom.143...92D. doi:10.1016/j.ssc.2007.04.023. ISSN   0038-1098. S2CID   44542277.
  89. Juang, Zhen-Yu; Wu, Chih-Yu; Lo, Chien-Wei; Chen, Wei-Yu; Huang, Chih-Fang; Hwang, Jenn-Chang; Chen, Fu-Rong; Leou, Keh-Chyang; Tsai, Chuen-Horng (2009-07-01). "Synthesis of graphene on silicon carbide substrates at low temperature". Carbon. 47 (8): 2026–2031. doi:10.1016/j.carbon.2009.03.051. ISSN   0008-6223.
  90. Castelletto, Stefania; Johnson, Brett; Iv{\'a}dy, Viktor; Stavrias, Nicholas; Umeda, T; Gali, Adam; Ohshima, Takeshi (2014). "A silicon carbide room-temperature single-photon source". Nature Materials. 13 (2): 151–156. Bibcode:2014NatMa..13..151C. doi:10.1038/nmat3806. PMID   24240243. S2CID   37160386.
  91. Lohrmann, A.; Iwamoto, N.; Bodrog, Z.; Castalletto, S.; Ohshima, T.; Karle, T.J.; Gali, A.; Prawer, S.; McCallum, J.C.; Johnson, B.C. (2015). "Single-photon emitting diode in silicon carbide". Nature Communications. 6: 7783. arXiv: 1503.07566 . Bibcode:2015NatCo...6.7783L. doi:10.1038/ncomms8783. PMID   26205309. S2CID   205338373.
  92. Khramtsov, I.A.; Vyshnevyy, A.A.; Fedyanin, D. Yu. (2018). "Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide". NPJ Quantum Information. 4: 15. Bibcode:2018npjQI...4...15K. doi: 10.1038/s41534-018-0066-2 .
  93. Davidsson, J.; Ivády, V.; Armiento, R.; Son, N.T.; Gali, A.; Abrikosov, I. A. (2018). "First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC". New Journal of Physics. 20 (2): 023035. arXiv: 1708.04508 . Bibcode:2018NJPh...20b3035D. doi:10.1088/1367-2630/aaa752. S2CID   4867492.
  94. "The best spinning rod" . Retrieved 2020-06-27.
  95. C. Boyd Pfeiffer (15 January 2013). Complete Book of Rod Building and Tackle Making. Rowman & Littlefield. ISBN   978-0-7627-9502-4.