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Ni2Si | |
Molar mass | 145.473 g/mol [1] |
Density | 7.40 g/cm3 [1] |
Melting point | 1,255 °C (2,291 °F; 1,528 K) [1] |
Structure [2] | |
Orthorhombic, oP12 | |
Pnma, No. 62 | |
a = 0.502 nm, b = 0.374 nm, c = 0.708 nm | |
Formula units (Z) | 4 |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). |
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NiSi | |
Molar mass | 86.778 g/mol |
Structure [3] | |
Orthorphomic, oP8 | |
Pnma, No. 62 | |
a = 0.519 nm, b = 0.333 nm, c = 0.5628 nm | |
Formula units (Z) | 4 |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). |
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CompTox Dashboard (EPA) | |
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NiSi2 | |
Molar mass | 114.864 g/mol [1] |
Density | 7.83 g/cm3 [1] |
Melting point | 993 °C (1,819 °F; 1,266 K) [1] |
Structure [4] | |
Cubic, cF12 | |
Fm3m, No. 225 | |
a = 0.5406 nm | |
Formula units (Z) | 4 |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). |
Nickel silicides include several intermetallic compounds of nickel and silicon. Nickel silicides are important in microelectronics as they form at junctions of nickel and silicon. Additionally thin layers of nickel silicides may have application in imparting surface resistance to nickel alloys.
Nickel silicides include Ni3Si, Ni31Si12, Ni2Si, Ni3Si2, NiSi and NiSi2. [5] Ni31Si12, Ni2Si, and NiSi have congruent melting points; the others form via a peritectic transformation.[ citation needed ] The silicides can be made via fusion or solid state reaction between the elements, diffusion at a junction of the two elements, and other methods including ion beam mixing.[ citation needed ]
Nickel silicides are generally chemically and thermally stable.[ citation needed ] They have low electrical resistivity; with NiSi 10.5–18 μΩ·cm, Ni2Si 24–30 μΩ·cm, NiSi2 34–50 μΩ·cm; nickel-rich silicides have higher resistivity rising to 90–150 μΩ·cm in Ni31Si12.[ citation needed ]
Nickel silicides are important in microelectronic devices – specific silicides are good conductors, with NiSi having a conductivity approaching that of elemental nickel.[ citation needed ] With silicon carbide as the semiconductor nickel reacts at elevated temperatures to form nickel silicides and carbon.[ citation needed ]
Nickel silicides have potential as coatings for nickel-based superalloys and stainless steel, due to their corrosion, oxidation, and wear resistance.[ citation needed ] NiSi has been investigated as a hydrogenation catalyst for unsaturated hydrocarbons. [6] Nickel silicide nanoparticles supported on silica support have been suggested as an alternative catalyst to widely used pyrophoric Raney nickel. [7]
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.
Nickel is a chemical element with symbol Ni and atomic number 28. It is a silvery-white lustrous metal with a slight golden tinge. Nickel is a hard and ductile transition metal. Pure nickel is chemically reactive, but large pieces are slow to react with air under standard conditions because a passivation layer of nickel oxide forms on the surface that prevents further corrosion. Even so, pure native nickel is found in Earth's crust only in tiny amounts, usually in ultramafic rocks, and in the interiors of larger nickel–iron meteorites that were not exposed to oxygen when outside Earth's atmosphere.
Rhenium is a chemical element with the symbol Re and atomic number 75. It is a silvery-gray, heavy, third-row transition metal in group 7 of the periodic table. With an estimated average concentration of 1 part per billion (ppb), rhenium is one of the rarest elements in the Earth's crust. It has the third-highest melting point and second-highest boiling point of any element at 5869 K. It resembles manganese and technetium chemically and is mainly obtained as a by-product of the extraction and refinement of molybdenum and copper ores. It shows in its compounds a wide variety of oxidation states ranging from −1 to +7.
Silane (Silicane) is an inorganic compound with chemical formula SiH4. It is a colourless, pyrophoric, toxic gas with a sharp, repulsive, pungent smell, somewhat similar to that of acetic acid. Silane is of practical interest as a precursor to elemental silicon. Silane with alkyl groups are effective water repellents for mineral surfaces such as concrete and masonry. Silanes with both organic and inorganic attachments are used as coupling agents. Silanes are commonly used to apply coatings to surfaces or as an adhesion promoter.
Tungsten(VI) fluoride, also known as tungsten hexafluoride, is an inorganic compound with the formula WF6. It is a toxic, corrosive, colorless gas, with a density of about 13 kg/m3 (22 lb/cu yd). It is one of the densest known gases under standard conditions. WF6 ls commonly used by the semiconductor industry to form tungsten films, through the process of chemical vapor deposition. This layer is used in a low-resistivity metallic "interconnect". It is one of seventeen known binary hexafluorides.
An intermetallic is a type of metallic alloy that forms an ordered solid-state compound between two or more metallic elements. Intermetallics are generally hard and brittle, with good high-temperature mechanical properties. They can be classified as stoichiometric or nonstoichiometic intermetallic compounds.
A heating element converts electrical energy into heat through the process of Joule heating. Electric current through the element encounters resistance, resulting in heating of the element. Unlike the Peltier effect, this process is independent of the direction of current.
Raney nickel, also called spongy nickel, is a fine-grained solid composed mostly of nickel derived from a nickel–aluminium alloy. Several grades are known, of which most are gray solids. Some are pyrophoric, but most are used as air-stable slurries. Raney nickel is used as a reagent and as a catalyst in organic chemistry. It was developed in 1926 by American engineer Murray Raney for the hydrogenation of vegetable oils. Raney is a registered trademark of W. R. Grace and Company. Other major producers are Evonik and Johnson Matthey.
Magnesium silicide, Mg2Si, is an inorganic compound consisting of magnesium and silicon. As-grown Mg2Si usually forms black crystals; they are semiconductors with n-type conductivity and have potential applications in thermoelectric generators.
A silicide is a type of chemical compound that combines silicon and a usually more electropositive element.
Molybdenum disilicide (MoSi2, or molybdenum silicide), an intermetallic compound, a silicide of molybdenum, is a refractory ceramic with primary use in heating elements. It has moderate density, melting point 2030 °C, and is electrically conductive. At high temperatures it forms a passivation layer of silicon dioxide, protecting it from further oxidation. The thermal stability of MoSi2 alongside its high emissivity make this material, alongside WSi2 attractive for applications as a high emissivity coatings in heat shields for atmospheric entry. MoSi2 is a gray metallic-looking material with tetragonal crystal structure (alpha-modification); its beta-modification is hexagonal and unstable. It is insoluble in most acids but soluble in nitric acid and hydrofluoric acid.
Ferrosilicon is an alloy of iron and silicon with a typical silicon content by weight of 15–90%. It contains a high proportion of iron silicides.
Calcium disilicide (CaSi2) is an inorganic compound, a silicide of calcium. It is a whitish or dark grey to black solid matter with melting point 1033 °C. It is insoluble in water, but may decompose when subjected to moisture, evolving hydrogen and producing calcium hydroxide. It decomposes in hot water, and is flammable and may ignite spontaneously in air.
AlSiC, pronounced "alsick", is a metal matrix composite consisting of aluminium matrix with silicon carbide particles. It has high thermal conductivity, and its thermal expansion can be adjusted to match other materials, e.g. silicon and gallium arsenide chips and various ceramics. It is chiefly used in microelectronics as substrate for power semiconductor devices and high density multi-chip modules, where it aids with removal of waste heat.
Binary compounds of silicon are binary chemical compounds containing silicon and one other chemical element. Technically the term silicide is reserved for any compounds containing silicon bonded to a more electropositive element. Binary silicon compounds can be grouped into several classes. Saltlike silicides are formed with the electropositive s-block metals. Covalent silicides and silicon compounds occur with hydrogen and the elements in groups 10 to 17.
Filamentous carbon is a carbon-containing deposit structure that refers to several allotropes of carbon, including carbon nanotubes, carbon nanofibers, and microcoils. It forms from gaseous carbon compounds. Filamentous carbon structures all contain metal particles. These are either iron, cobalt, or nickel or their alloys. Deposits of it also significantly disrupt synthesis gas methanation. Acetylene is involved in a number of method of the production of filamentous carbon. The structures of filamentous carbon are mesoporous and on the micrometer scale in dimension. Most reactions that form the structures take place at or above 280 °C (536 °F).
Nickel compounds are chemical compounds containing the element nickel which is a member of the group 10 of the periodic table. Most compounds in the group have an oxidation state of +2. Nickel is classified as a transition metal with nickel(II) having much chemical behaviour in common with iron(II) and cobalt(II). Many salts of nickel(II) are isomorphous with salts of magnesium due to the ionic radii of the cations being almost the same. Nickel forms many coordination complexes. Nickel tetracarbonyl was the first pure metal carbonyl produced, and is unusual in its volatility. Metalloproteins containing nickel are found in biological systems.
Manganese disilicide (MnSi2) is an intermetallic compound, a silicide of manganese. It is a non-stoichiometric compound, with a silicon deficiency expressed as MnSi2–x. Crystal structures of many MnSi2–x compounds resemble a chimney ladder and are called Nowotny phases. They include MnSi2 (x=0), Mn4Si7 (x=0.250), Mn11Si19 (x=0.273), Mn15Si26 (x=0.267) and Mn27Si47 (x=0.259). These phases have very similar unit cells whose length varies from 1.75 nm for MnSi2 or Mn4Si7, which have almost the same structures, to 11.8 nm for Mn27Si47.
Nickel monosilicide is an intermetallic compound formed out of nickel and silicon. Like other nickel silicides, NiSi is of importance in the area of microelectronics.