Magnesium silicide

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Magnesium silicide
Antifluorite Structure.jpg
Magnesium silicide.jpg
Names
Preferred IUPAC name
Magnesium silicide
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.041.125 OOjs UI icon edit-ltr-progressive.svg
EC Number
  • 245-254-5
PubChem CID
UNII
UN number 2624
  • InChI=1S/2Mg.Si Yes check.svgY
    Key: YTHCQFKNFVSQBC-UHFFFAOYSA-N Yes check.svgY
  • InChI=1/2Mg.Si/rMg2Si/c1-3-2
    Key: YTHCQFKNFVSQBC-GEBTXNJDAA
  • [Mg]=[Si]=[Mg]
Properties
Mg2Si
Molar mass 76.695 g·mol−1
AppearanceGray cubic crystals [1]
Density 1.99 g cm−3 [1]
Melting point 1,102 °C (2,016 °F; 1,375 K) [1]
reacts [1]
Structure [2]
Antifluorite (cubic), cF12
Fm3m, #225
a = 0.6351 nm
4
Hazards
Occupational safety and health (OHS/OSH):
Main hazards
reacts with water to produce pyrophoric silane
GHS labelling:
GHS-pictogram-flamme.svg
Warning
H261
P231+P232, P280, P370+P378, P402+P404, P501
Related compounds
Other cations
Calcium silicide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Yes check.svgY  verify  (what is  Yes check.svgYX mark.svgN ?)

Magnesium silicide, Mg2Si, is an inorganic compound consisting of magnesium and silicon. As-grown Mg2Si usually forms black crystals; they are semiconductors with n-type conductivity and have potential applications in thermoelectric generators. [3]

Contents

Crystal structure

Mg2Si crystallizes in the antifluorite structure. In the face-centered cubic lattice Si centers occupy the corners and face-centered positions of the unit cell and Mg centers occupy eight tetrahedral sites in the interior of the unit cell. The coordination numbers of Si and Mg are eight and four, respectively. [2]

Synthesis

The reaction of powdered sand with magnesium powder.

It can be produced by heating silicon dioxide, SiO2, found in sand, with excess magnesium. The process first forms silicon metal and magnesium oxide, and, if an excess of SiO2 is used, then elemental silicon is formed:

2 Mg + SiO2 → 2 MgO + Si

If an excess of Mg is present, Mg2Si is formed from the reaction of the remaining magnesium with the silicon:

2 Mg + Si → Mg2Si

These reactions proceed exothermically, [4] even explosively. [5]

Reactions

The reaction of magnesium silicide with 10% hydrochloric acid.

Magnesium silicide can be viewed as consisting of Si4− ions. As such it is reactive toward acids. Thus, when magnesium silicide is treated with hydrochloric acid, silane (SiH4) and magnesium chloride are produced:

Mg2Si + 4 HCl → SiH4 + 2 MgCl2

Sulfuric acid can be used as well. These protonolysis reactions are typical of a group 2 (alkaline earth metal) and group 1 (alkali metal) silicides. The early development of silicon hydrides relied on this reaction. [5]

Uses

Magnesium silicide is used to create aluminium alloys of the 6000 series, containing up to approximately 1.5% Mg2Si. An alloy of this group can be age-hardened to form Guinier-Preston zones and a very fine precipitate, both resulting in increased strength of the alloy. [6]

Magnesium silicide is a narrow-gap semiconductor. Its as-grown crystal exhibit n-type conductivity, but it can be changed to p-type by doping with Ag, Ga, Sn and possibly Li (at high doping level). The major potential electronic application of Mg2Si is in thermoelectric generators. [3] [7]

Related Research Articles

<span class="mw-page-title-main">Chemical vapor deposition</span> Method used to apply surface coatings

Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.

<span class="mw-page-title-main">Silicon</span> Chemical element with atomic number 14 (Si)

Silicon is a chemical element; it has symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Silicon is a significant element that is essential for several physiological and metabolic processes in plants. Silicon is widely regarded as the predominant semiconductor material due to its versatile applications in various electrical devices such as transistors, solar cells, integrated circuits, and others. These may be due to its significant band gap, expansive optical transmission range, extensive absorption spectrum, surface roughening, and effective anti-reflection coating.

A metalloid is a chemical element which has a preponderance of properties in between, or that are a mixture of, those of metals and nonmetals. The word metalloid comes from the Latin metallum ("metal") and the Greek oeides. There is no standard definition of a metalloid and no complete agreement on which elements are metalloids. Despite the lack of specificity, the term remains in use in the literature.

<span class="mw-page-title-main">Silane</span> Chemical compound (SiH4)

Silane (Silicane) is an inorganic compound with chemical formula SiH4. It is a colorless, pyrophoric, toxic gas with a sharp, repulsive, pungent smell, somewhat similar to that of acetic acid. Silane is of practical interest as a precursor to elemental silicon. Silane with alkyl groups are effective water repellents for mineral surfaces such as concrete and masonry. Silanes with both organic and inorganic attachments are used as coupling agents. They are commonly used to apply coatings to surfaces or as an adhesion promoter.

<span class="mw-page-title-main">Silicon tetrachloride</span> Chemical compound

Silicon tetrachloride or tetrachlorosilane is the inorganic compound with the formula SiCl4. It is a colorless volatile liquid that fumes in air. It is used to produce high purity silicon and silica for commercial applications. It is a part of the chlorosilane family.

<span class="mw-page-title-main">Thermoelectric materials</span> Materials whose temperature variance leads to voltage change

Thermoelectric materials show the thermoelectric effect in a strong or convenient form.

Aluminium–silicon alloys or Silumin is a general name for a group of lightweight, high-strength aluminium alloys based on an aluminum–silicon system (AlSi) that consist predominantly of aluminum - with silicon as the quantitatively most important alloying element. Pure AlSi alloys cannot be hardened, the commonly used alloys AlSiCu and AlSiMg can be hardened. The hardening mechanism corresponds to that of AlCu and AlMgSi.

<span class="mw-page-title-main">Refractory</span> Materials resistant to decomposition under high temperatures

In materials science, a refractory is a material that is resistant to decomposition by heat or chemical attack and that retains its strength and rigidity at high temperatures. They are inorganic, non-metallic compounds that may be porous or non-porous, and their crystallinity varies widely: they may be crystalline, polycrystalline, amorphous, or composite. They are typically composed of oxides, carbides or nitrides of the following elements: silicon, aluminium, magnesium, calcium, boron, chromium and zirconium. Many refractories are ceramics, but some such as graphite are not, and some ceramics such as clay pottery are not considered refractory. Refractories are distinguished from the refractory metals, which are elemental metals and their alloys that have high melting temperatures.

<span class="mw-page-title-main">Tungsten hexafluoride</span> Chemical compound

Tungsten(VI) fluoride, also known as tungsten hexafluoride, is an inorganic compound with the formula WF6. It is a toxic, corrosive, colorless gas, with a density of about 13 kg/m3 (22 lb/cu yd). It is the only known gaseous transition metal compound and the densest known gas under standard ambient temperature and pressure. WF6 is commonly used by the semiconductor industry to form tungsten films, through the process of chemical vapor deposition. This layer is used in a low-resistivity metallic "interconnect". It is one of seventeen known binary hexafluorides.

In inorganic chemistry, chlorosilanes are a group of reactive, chlorine-containing chemical compounds, related to silane and used in many chemical processes. Each such chemical has at least one silicon-chlorine bond. Trichlorosilane is produced on the largest scale. The parent chlorosilane is silicon tetrachloride.

<span class="mw-page-title-main">Silicide</span> Chemical compound that combines silicon and a more electropositive element

A silicide is a type of chemical compound that combines silicon and a usually more electropositive element.

<span class="mw-page-title-main">Platinum silicide</span> Chemical compound

Platinum silicide, also known as platinum monosilicide, is the inorganic compound with the formula PtSi. It is a semiconductor that turns into a superconductor when cooled to 0.8 K.

An ohmic contact is a non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I–V) curve as with Ohm's law. Low-resistance ohmic contacts are used to allow charge to flow easily in both directions between the two conductors, without blocking due to rectification or excess power dissipation due to voltage thresholds.

Silicon compounds are compounds containing the element silicon (Si). As a carbon group element, silicon often forms compounds in the +4 oxidation state, though many unusual compounds have been discovered that differ from expectations based on its valence electrons, including the silicides and some silanes. Metal silicides, silicon halides, and similar inorganic compounds can be prepared by directly reacting elemental silicon or silicon dioxide with stable metals or with halogens. Silanes, compounds of silicon and hydrogen, are often used as strong reducing agents, and can be prepared from aluminum–silicon alloys and hydrochloric acid.

Trisilane is the silane with the formula H2Si(SiH3)2. A liquid at standard temperature and pressure, it is a silicon analogue of propane. In contrast with propane, however, trisilane ignites spontaneously in air.

<span class="mw-page-title-main">Binary compounds of silicon</span> Any binary chemical compound containing just silicon and another chemical element

Binary compounds of silicon are binary chemical compounds containing silicon and one other chemical element. Technically the term silicide is reserved for any compounds containing silicon bonded to a more electropositive element. Binary silicon compounds can be grouped into several classes. Saltlike silicides are formed with the electropositive s-block metals. Covalent silicides and silicon compounds occur with hydrogen and the elements in groups 10 to 17.

Polysilicon hydrides are polymers containing only silicon and hydrogen. They have the formula where 0.2 ≤ n ≤ 2.5 and x is the number of monomer units. The polysilicon hydrides are generally colorless or pale-yellow/ocher powders that are easily hydrolyzed and ignite readily in air. The surfaces of silicon prepared by MOCVD using silane (SiH4) consist of a polysilicon hydride.

<span class="mw-page-title-main">Digermane</span> Chemical compound

Digermane is an inorganic compound with the chemical formula Ge2H6. One of the few hydrides of germanium, it is a colourless liquid. Its molecular geometry is similar to ethane.

<span class="mw-page-title-main">Nickel silicide</span> Chemical compound

Nickel silicides include several intermetallic compounds of nickel and silicon. Nickel silicides are important in microelectronics as they form at junctions of nickel and silicon. Additionally thin layers of nickel silicides may have application in imparting surface resistance to nickel alloys.

Aluminium–magnesium–silicon alloys (AlMgSi) are aluminium alloys—alloys that are mainly made of aluminium—that contain both magnesium and silicon as the most important alloying elements in terms of quantity. Both together account for less than 2 percent by mass. The content of magnesium is greater than that of silicon, otherwise they belong to the aluminum–silicon–magnesium alloys (AlSiMg).

References

  1. 1 2 3 4 Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 4.74. ISBN   1-4398-5511-0.
  2. 1 2 Noda Y., Kon H., Furukawa Y., Otsuka N., Nishida I.A., Masumoto K. (1992). "Preparation and Thermoelectric Properties of Mg2Si1−xGex (x=0.0~0.4) Solid Solution Semiconductors". Mater. Trans., JIM. 33 (9): 845–850. doi: 10.2320/matertrans1989.33.845 .{{cite journal}}: CS1 maint: multiple names: authors list (link)
  3. 1 2 Hirayama, Naomi (2019). "Substitutional and interstitial impurity p-type doping of thermoelectric Mg2Si: a theoretical study". Sci. Technol. Adv. Mater. 20 (1): 160–172. Bibcode:2019STAdM..20..160H. doi:10.1080/14686996.2019.1580537. PMC   6419642 . PMID   30891103. Open Access logo PLoS transparent.svg
  4. Ehrlich, P. (1963). "17". In Brauer, Georg (ed.). Handbook of Preparative Inorganic Chemistry (PDF). Vol. 1. Translated by Riley; Reed F. (2nd ed.). New York: Academic Press, Inc. p. 921. ISBN   978-0121266011 . Retrieved 26 September 2024.
  5. 1 2 Stock, Alfred; Somieski, Carl (1916). "Siliciumwasserstoffe. I. Die aus Magnesiumsilicid und Säuren entstehenden Siliciumwasserstoffe". Berichte der Deutschen Chemischen Gesellschaft. 49: 111–157. doi:10.1002/cber.19160490114.
  6. "Properties and Selection: Non-ferrous Alloys and Special Purpose Materials" in ASM Handbook, 10th ed., Vol. 1, 1990, ASM International, Materials Park, Ohio. ISBN   0871703785.
  7. Borisenko, Victor E. (2013). Semiconducting Silicides: Basics, Formation, Properties. Springer Science & Business Media. pp. 187, 287. ISBN   978-3-642-59649-0.