Any binary chemical compound containing just silicon and another chemical element
Binary compounds of silicon are binarychemical compounds containing silicon and one other chemical element.[1] Technically the term silicide is reserved for any compounds containing silicon bonded to a more electropositive element. Binary silicon compounds can be grouped into several classes. Saltlike silicides are formed with the electropositive s-block metals. Covalent silicides and silicon compounds occur with hydrogen and the elements in groups 10 to 17.
Transition metals form metallic silicides, with the exceptions of silver, gold and the group 12 elements. The general composition is MnSi or MSin with n ranging from 1 to 6 and M standing for metal. Examples are M5Si, M3Si (Cu, V, Cr, Mo, Mn, Fe, Pt, U), M2Si (Zr, Hf, Ta, Ir, Ru, Rh, Co, Ni, Ce), M3Si2 (Hf, Th, U), MSi (Ti, Zr, Hf, Fe, Ce, Th, Pu) and MSi2 (Ti, V, Nb, Ta, Cr, Mo, W, Re).
The Kopp–Neumann law applies; heat capacities are linear in the proportion of silicon:
As a general rule, nonstochiometry implies instability. These intermetallics are in general resistant to hydrolysis, brittle, and melt at a lower temperature than the corresponding carbides or borides. They are electrical conductors. However, some, such as CrSi2, Mg2Si, β-FeSi2 and MnSi1.7, are semiconductors. Since degenerate semiconductors exhibit some metallic properties, such as luster and electrical conductivity which decreases with temperature, some silicides classified as metals may be semiconductors.
Many cluster compounds of lithium silicides are known, such as Li13Si4, Li22Si5, Li7Si3 and Li12Si7.[2] Li4.4Si is prepared from silicon and lithium metal in high-energy Ball mill process.[3] Potential uses include electrodes in lithium batteries. Li12Si7 has a Zintl phase with planar Si56− rings. Li NMR spectroscopy suggests these rings are aromatic.[4]
Other group 1 elements also form clusters: sodium silicide can be represented by NaSi, NaSi2 and Na11Si36[5] and potassium silicide by K8Si46. Group 1 silicides are in general high melting, metallic grey, with moderate to poor electrical conductance and prepared by heating the elements. Superconducting properties have been reported for Ba8Si46.[6] Several silicon Zintl ions (Si4− 4, Si4− 9, Si2− 5) are known with group 1 counterions.[7]
Group 2
Silicides of group 2 elements are also saltlike silicides except for beryllium whose phase diagram with silicon is a simple eutectic (1085°C @ 60% by weight silicon).[8] Again there is variation in composition: magnesium silicide is represented by Mg2Si,[9]calcium silicide can be represented by Ca2Si, CaSi, CaSi2, Ca5Si3 and by Ca14Si19,[10] strontium silicide can be represented by Sr2Si, SrSi2 and Sr5Si3[11] and barium silicide can be represented by Ba2Si, BaSi2, Ba5Si3 and Ba3Si4.[12] Mg2Si, and its solid solutions with Mg2Ge and Mg2Sn, are good thermoelectric materials and their figure of merit values are comparable with those of established materials.
Transition and inner transition metals
The transition metals form a wide range of silicon intermetallics with at least one binary crystalline phase. Some exceptions exist. Gold forms a eutectic at 363°C with 2.3% silicon by weight (18% atom percent) without mutual solubility in the solid state.[13]Silver forms another eutectic at 835°C with 11% silicon by weight, again with negligible mutual solid state solubility. In group 12 all elements form a eutectic close to the metal melting point without mutual solid-state solubility: zinc at 419°C and > 99 atom percent zinc and cadmium at 320°C (< 99% Cd).
Commercially relevant intermetallics are group 6molybdenum disilicide, a commercial ceramic mostly used as an heating element. Tungsten disilicide is also a commercially available ceramic with uses in microelectronics. Platinum silicide is a semiconductor material. Ferrosilicon is an iron alloy that also contains some calcium and aluminium.
MnSi, known as brownleeite, can be found in outer space. Several Mn silicides form a Nowotny phase. Nanowires based on silicon and manganese can be synthesised from Mn(CO)5SiCl3 forming nanowires based on Mn19Si33.[14] or grown on a silicon surface[15][16][17] MnSi1.73 was investigated as thermoelectric material[18] and as an optoelectronic thin film.[19] Single-crystal MnSi1.73 can form from a tin-lead melt[20]
In the frontiers of technological research, iron disilicide is becoming more and more relevant to optoelectronics, specially in its crystalline form β-FeSi2.[21][22] They are used as thin films or as nanoparticles, obtained by means of epitaxial growth on a silicon substrate.[23][24]
Silicon carbide (SiC) is widely used as a ceramic or example in car brakes and bulletproof vests. It is also used in semiconductor electronics. It is manufactured from silicon dioxide and carbon in an Acheson furnace between 1600 and 2500°C. There are 250 known crystalline forms with alpha silicon carbide the most common. Silicon itself is an important semiconductor material used in microchips. It is produced commercially from silica and carbon at 1900°C and crystallizes in a diamond cubic crystal structure. Germanium silicide forms a solid solution and is again a commercially used semiconductor material.[83] The tin–silicon phase diagram is a eutectic[84] and the lead–silicon phase diagram shows a monotectic transition and a small eutectic transition but no solid solubility.[85]
Group 15
Silicon nitride (Si3N4) is a ceramic with many commercial high-temperature applications such as engine parts. It can be synthesized from the elements at temperatures between 1300 and 1400°C. Three different crystallographic forms exist. Other binary silicon nitrogen compounds have been proposed (SiN, Si2N3, Si3N)[86] and other SiN compounds have been investigated at cryogenic temperatures (SiN2, Si(N2)2, SiNNSi).[87]Silicon tetraazide is an unstable compound that easily detonates.
The phase diagram with phosphorus shows SiP and SiP2.[88] A reported silicon phosphide is Si12P5 (no practical applications),[89][90] formed by annealing an amorphous Si-P alloy.
The arsenic–silicon phase diagram measured at 40 Bar has two phases: SiAs and SiAs2.[91] The antimony–silicon system comprises a single eutectic close to the melting point of Sb.[92] The bismuth system is a monotectic.[93]
Group 16
In group 16 silicon dioxide is a very common compound that widely occurs as sand or quartz. SiO2 is tetrahedral with each silicon atom surrounded by 4 oxygen atoms. Numerous crystalline forms exist with the tetrahedra linked to form a polymeric chain. Examples are tridymite and cristobalite. A less common oxide is silicon monoxide that can be found in outer space. Unconfirmed reports exist for nonequilibrium Si2O, Si3O2, Si3O4, Si2O3 and Si3O5.[94]Silicon sulfide is also a chain compound. Cyclic SiS2 has been reported to exist in the gas phase.[95] The phase diagram of silicon with selenium has two phases: SiSe2 and SiSe.[96] Tellurium silicide is a semiconductor with formula TeSi2 or Te2Si3.[97]
Group 17
Binary silicon compounds in group 17 are stable compounds ranging from gaseous silicon fluoride (SiF4) to the liquids silicon chloride (SiCl4 and silicon bromide SiBr4) to the solid silicon iodide (SiI4). The molecular geometry in these compounds is tetrahedral and the bonding mode covalent. Other known stable fluorides in this group are Si2F6, Si3F8 (liquid) and polymeric solids known as polysilicon fluorides (SiF2)x and (SiF)x. The other halides form similar binary silicon compounds.[98]
The periodic table of the binary silicon compounds
In crystallography, the cubiccrystal system is a crystal system where the unit cell is in the shape of a cube. This is one of the most common and simplest shapes found in crystals and minerals.
Magnesium silicide, Mg2Si, is an inorganic compound consisting of magnesium and silicon. As-grown Mg2Si usually forms black crystals; they are semiconductors with n-type conductivity and have potential applications in thermoelectric generators.
A silicide is a type of chemical compound that combines silicon and a usually more electropositive element.
Ferrosilicon is an alloy of iron and silicon with a typical silicon content by weight of 15–90%. It contains a high proportion of iron silicides.
Calcium disilicide (CaSi2) is an inorganic compound, a silicide of calcium. It is a whitish or dark grey to black solid matter with melting point 1033 °C. It is insoluble in water, but may decompose when subjected to moisture, evolving hydrogen and producing calcium hydroxide. It decomposes in hot water, and is flammable and may ignite spontaneously in air.
Binary compounds of hydrogen are binary chemical compounds containing just hydrogen and one other chemical element. By convention all binary hydrogen compounds are called hydrides even when the hydrogen atom in it is not an anion. These hydrogen compounds can be grouped into several types.
Scandium hydride, also known as scandium–hydrogen alloy, is an alloy made by combining scandium and hydrogen. Hydrogen acts as a hardening agent, preventing dislocations in the scandium atom crystal lattice from sliding past one another. Varying the amount of hydrogen controls qualities such as the hardness of the resulting scandium hydride. Scandium hydride with increased hydrogen content can be made harder than scandium.
Iron disilicide (FeSi2) is an intermetallic compound, a silicide of iron that occurs in nature as the rare mineral linzhiite. At room temperature it forms orthorhombic crystals (β phase), which convert into a tetragonal α phase upon heating to 970 °C.
Manganese disilicide (MnSi2) is an intermetallic compound, a silicide of manganese. It is a non-stoichiometric compound, with a silicon deficiency expressed as MnSi2–x. Crystal structures of many MnSi2–x compounds resemble a chimney ladder and are called Nowotny phases. They include MnSi2 (x=0), Mn4Si7 (x=0.250), Mn11Si19 (x=0.273), Mn15Si26 (x=0.267) and Mn27Si47 (x=0.259). These phases have very similar unit cells whose length varies from 1.75 nm for MnSi2 or Mn4Si7, which have almost the same structures, to 11.8 nm for Mn27Si47.
Nickel monosilicide is an intermetallic compound formed out of nickel and silicon. Like other nickel silicides, NiSi is of importance in the area of microelectronics.
Silicide carbides or carbide silicides are compounds containing anions composed of silicide (Si4−) and carbide (C4−) or clusters therof. They can be considered as mixed anion compounds or intermetallic compounds, as silicon could be considered as a semimetal.
A silicide hydride is a mixed anion compound that contains silicide (Si4− or clusters) and hydride (H−) anions. The hydrogen is not bound to silicon in these compounds. These can be classed as interstitial hydrides, Hydrogenated zintl phases, or Zintl phase hydrides. In the related silanides, SiH3− anions or groups occur. Where hydrogen is bonded to the silicon, this is a case of anionic hydride, and where it is bonded to a more complex anion, it would be termed polyanionic hydride.
Lithium telluride (Li2Te) is an inorganic compound of lithium and tellurium. Along with LiTe3, it is one of the two intermediate solid phases in the lithium-tellurium system. It can be prepared by directly reacting lithium and tellurium in a beryllium oxide crucible at 950°C.
Neodymium bismuthide or Bismuth-Neodymium is a binary inorganic compound of neodymium and bismuth with the formula NdBi. It forms crystals.
Dmitri Petrovich Konovalov was a Russian-Soviet physical chemist who worked on gas-liquid phases of solutions in equilibrium and came up with several rules that were also independently worked on by J. Willard Gibbs and the rules are often called Gibbs-Konovalov rules. They provide the basis for distillation and separation of components that form azeotropes.
Barium selenide is an inorganic compound, with the chemical formula of BaSe. It is a white solid although typically samples are colored owing to the effects of air oxidation.
Praseodymium arsenide is a binary inorganic compound of praseodymium and arsenic with the formula PrAs.
While chemically pure materials have a single melting point, chemical mixtures often partially melt at the solidus temperature (TS or Tsol), and fully melt at the higher liquidus temperature (TL or Tliq). The solidus is always less than or equal to the liquidus, but they need not coincide. If a gap exists between the solidus and liquidus it is called the freezing range, and within that gap, the substance consists of a mixture of solid and liquid phases (like a slurry). Such is the case, for example, with the olivine (forsterite-fayalite) system, which is common in Earth's mantle.
Samarium tetraboride is a binary inorganic compound of samarium and boron with the formula SmB4. It forms black crystals.
Praseodymium monosulfide is a binary inorganic chemical compound of praseodymium metal and sulfur with the chemical formula PrS.
References
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↑ Solid state ionics for batteries, Tsutomu Minami, Masahiro Tatsumisago
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↑ Gokhale, A. B.; Abbaschian, G. J. (1987). "The Cr−Si (Chromium-Silicon) system". Journal of Phase Equilibria. 8 (5). Springer Science and Business Media LLC: 474–484. doi:10.1007/bf02893156. ISSN1054-9714. S2CID95591626.
↑ Vočadlo, Lidunka; Price, Geoffrey D.; Wood, I. G. (1999-08-01). "Crystal structure, compressibility and possible phase transitions in epsilon-FeSi studied by first-principles pseudopotential calculations". Acta Crystallographica Section B: Structural Science. 55 (4). International Union of Crystallography (IUCr): 484–493. doi:10.1107/s0108768199001214. ISSN0108-7681. PMID10927390.
↑ Ishida, K; Nishizawa, T; Schlesinger, M. E (1991). "The Co-Si (Cobalt-Silicon) system". Journal of Phase Equilibria. 12 (5). Springer Science and Business Media LLC: 578–586. doi:10.1007/bf02645074. ISSN1054-9714. S2CID94983677.
↑ Nash, P.; Nash, A. (1987). "The Ni−Si (Nickel-Silicon) system". Bulletin of Alloy Phase Diagrams. 8 (1). Springer Science and Business Media LLC: 6–14. doi:10.1007/bf02868885. ISSN0197-0216.
↑ Olesinski, R. W.; Abbaschian, G. J. (1985). "The Si-Zn (Silicon-Zinc) system". Bulletin of Alloy Phase Diagrams. 6 (6). Springer Science and Business Media LLC: 545–548. doi:10.1007/bf02887156. ISSN0197-0216.
↑ Gokhale, A. B.; Abbaschian, G. J. (1986). "The Si−Y (Silicon-Yttrium) system". Bulletin of Alloy Phase Diagrams. 7 (5). Springer Science and Business Media LLC: 485–489. doi:10.1007/bf02867814. ISSN0197-0216.
↑ Pöttgen, Rainer; Hoffmann, Rolf-Dieter; Kußmann, Dirk (1998). "The Binary Silicides Eu5Si3 and Yb3Si5 - Synthesis, Crystal Structure, and Chemical Bonding". Zeitschrift für anorganische und allgemeine Chemie (in German). 624 (6). Wiley: 945–951. doi:10.1002/(sici)1521-3749(199806)624:6<945::aid-zaac945>3.0.co;2-d. ISSN0044-2313.
↑ Kubata, Christof; Krumeich, Frank; Wörle, Michael; Nesper, Reinhard (2005). "The Real Structure of YbSi1.4 - Commensurately and Incommensurately Modulated Silicon Substructures". Zeitschrift für anorganische und allgemeine Chemie (in German). 631 (2–3). Wiley: 546–555. doi:10.1002/zaac.200400423. ISSN0044-2313.
↑ Okamoto, H. (1990). "The Si-Zr (Silicon-Zirconium) system". Journal of Phase Equilibria. 11 (5). Springer Science and Business Media LLC: 513–519. doi:10.1007/bf02898272. ISSN1054-9714.
↑ Grin, Juri N. (1986). "Ein Aufbaumodell für "Chimney-Ladder"-Strukturen". Monatshefte für Chemie Chemical Monthly (in German). 117 (8–9). Springer Science and Business Media LLC: 921–932. doi:10.1007/bf00811261. ISSN0026-9247. S2CID94740968.
↑ Perring, L.; Bussy, F.; Gachon, J.C.; Feschotte, P. (1999). "The Ruthenium–Silicon system". Journal of Alloys and Compounds. 284 (1–2). Elsevier BV: 198–205. doi:10.1016/s0925-8388(98)00911-6. ISSN0925-8388.
↑ Okamoto, H. (2000). "Ru-Si (Ruthenium-Silicon)". Journal of Phase Equilibria. 21 (5). Springer Science and Business Media LLC: 498. doi:10.1361/105497100770339806. ISSN1054-9714.
↑ Schlesinger, M.E (1992). "The rh-si (rhodium-silicon) system". Journal of Phase Equilibria. 13 (1). Springer Science and Business Media LLC: 54–59. doi:10.1007/bf02645377. ISSN1054-9714. S2CID96736788.
↑ Baxi, H. C.; Massalski, T. B. (1991). "The pdsi (palladiumsilicon) system". Journal of Phase Equilibria. 12 (3). Springer Science and Business Media LLC: 349–356. doi:10.1007/bf02649925. ISSN1054-9714. S2CID100418050.
↑ Olesinski, R. W.; Gokhale, A. B.; Abbaschian, G. J. (1989). "The Ag-Si (Silver-Silicon) system". Bulletin of Alloy Phase Diagrams. 10 (6). Springer Science and Business Media LLC: 635–640. doi:10.1007/bf02877631. ISSN0197-0216.
↑ Olesinski, R. W.; Abbaschian, G. J. (1985). "The Cd-Si (Cadmium-Silicon) system". Bulletin of Alloy Phase Diagrams. 6 (6). Springer Science and Business Media LLC: 534–536. doi:10.1007/bf02887152. ISSN0197-0216.
↑ Bulanova, M.V.; Zheltov, P.N.; Meleshevich, K.A.; Saltykov, P.A.; Effenberg, G. (2002). "Cerium–silicon system". Journal of Alloys and Compounds. 345 (1–2). Elsevier BV: 110–115. doi:10.1016/s0925-8388(02)00409-7. ISSN0925-8388.
↑ Munitz, A.; Gokhale, A. B.; Abbaschian, G. J. (1989). "The Ce-Si (Cerium-Silicon) system". Bulletin of Alloy Phase Diagrams. 10 (1). Springer Science and Business Media LLC: 73–78. doi:10.1007/bf02882179. ISSN0197-0216.
↑ Gorbachuk, N. P.; Bolgar, A. S.; Blinder, A. V. (1997). "Thermodynamic properties of praseodymium silicides in the temperature range 298.15-2257 K". Powder Metallurgy and Metal Ceramics. 36 (9–10). Springer Science and Business Media LLC: 498–501. doi:10.1007/bf02680501. ISSN1068-1302. S2CID94765578.
↑ Gokhale, A. B.; Munitz, A.; Abbaschian, G. J. (1989). "The Nd-Si (Neodymium-Silicon) system". Bulletin of Alloy Phase Diagrams. 10 (3). Springer Science and Business Media LLC: 246–251. doi:10.1007/bf02877504. ISSN0197-0216.
↑ Gokhale, A. B.; Abbaschian, G. J. (1988). "The Si-Sm (Silicon-Samarium) system". Bulletin of Alloy Phase Diagrams. 9 (5). Springer Science and Business Media LLC: 582–585. doi:10.1007/bf02881960. ISSN0197-0216.
↑ Gokhale, A. B.; Abbaschian, G. J. (1988). "The Gd−Si (Gadolinium-Silicon) system". Bulletin of Alloy Phase Diagrams. 9 (5). Springer Science and Business Media LLC: 574–578. doi:10.1007/bf02881958. ISSN0197-0216.
↑ Okamoto, H. (2000). "Si-Tb (Silicon-Terbium)". Journal of Phase Equilibria. 21 (5). Springer Science and Business Media LLC: 500. doi:10.1361/105497100770339824. ISSN1054-9714.
↑ Gorbachuk, Nikolai P.; Bolgar, Alexander S. (2002). "The Enthalpies of DySi2 and HoSi1.67 at 298.15-2007 K". Powder Metallurgy and Metal Ceramics. 41 (3/4). Springer Science and Business Media LLC: 173–176. doi:10.1023/a:1019891128273. ISSN1068-1302. S2CID91215617.
↑ Okamoto, H. (1997). "Er-Si (erbium-silicon)". Journal of Phase Equilibria. 18 (4). Springer Science and Business Media LLC: 403. doi:10.1007/s11669-997-0073-z. ISSN1054-9714.
↑ Topor, L.; Kleppa, O.J. (1990). "Standard enthalpies of formation of Me5Si3 (Me - Y, Lu, Zr) and of Hf3Si2". Journal of the Less Common Metals. 167 (1). Elsevier BV: 91–99. doi:10.1016/0022-5088(90)90292-r. ISSN0022-5088.
↑ Gokhale, A. B.; Abbaschian, G. J. (1989). "The Hf-Si (hafnium-silicon) system". Bulletin of Alloy Phase Diagrams. 10 (4). Springer Science and Business Media LLC: 390–393. doi:10.1007/bf02877595. ISSN0197-0216.
↑ Tungsten: Properties, Chemistry, Technology of the Element, Alloys, and Chemical Compounds Lassner, Erik, Schubert, Wolf-Dieter 1999
↑ Gokhale, A. B.; Abbaschian, R. (1996). "The Re-Si system (rhenium-silicon)". Journal of Phase Equilibria. 17 (5). Springer Science and Business Media LLC: 451–454. doi:10.1007/bf02667640. ISSN1054-9714. S2CID95014982.
↑ Allevato, C.E.; Vining, Cronin B. (1993). "Phase diagram and electrical behavior of silicon-rich iridium silicide compounds". Journal of Alloys and Compounds. 200 (1–2). Elsevier BV: 99–105. doi:10.1016/0925-8388(93)90478-6. ISSN0925-8388.
↑ Jeitschko, W.; Parthé, E. (1967-03-10). "The crystal structure of Rh17Ga22, an example of a new kind of electron compound". Acta Crystallographica. 22 (3). International Union of Crystallography (IUCr): 417–430. Bibcode:1967AcCry..22..417J. doi:10.1107/s0365110x67000799. ISSN0365-110X.
↑ Okamoto, H.; Massalski, T. B. (1983). "The Au−Si (Gold-Silicon) system". Bulletin of Alloy Phase Diagrams. 4 (2). Springer Science and Business Media LLC: 190–198. doi:10.1007/bf02884878. ISSN0197-0216.
↑ Guminski, C. (2001). "The Hg-Si system (mercury-silicon)". Journal of Phase Equilibria. 22 (6). Springer Science and Business Media LLC: 682–683. doi:10.1007/s11669-001-0041-y. ISSN1054-9714.
↑ as summarized in Constitution of Binary Alloys, Second Supplement, Francis A. Shunk, McGraw-Hill Book Inc., (NY NY 1969) p. 681-82.
↑ Weigel, F.; Wittmann, F.D.; Marquart, R. (1977). "Americium monosilicide and "disilicide"". Journal of the Less Common Metals. 56 (1). Elsevier BV: 47–53. doi:10.1016/0022-5088(77)90217-x. ISSN0022-5088.
↑ Weigel, F.; Marquart, R. (1983). "Preparation and properties of some curium silicides". Journal of the Less Common Metals. 90 (2). Elsevier BV: 283–290. doi:10.1016/0022-5088(83)90077-2. ISSN0022-5088.
↑ Olesinski, R. W.; Abbaschian, G. J. (1984). "The B−Si (Boron-Silicon) system". Bulletin of Alloy Phase Diagrams. 5 (5). Springer Science and Business Media LLC: 478–484. doi:10.1007/bf02872900. ISSN0197-0216.
↑ Murray, J. L.; McAlister, A. J. (1984). "The Al-Si (Aluminum-Silicon) system". Bulletin of Alloy Phase Diagrams. 5 (1). Springer Science and Business Media LLC: 74–84. doi:10.1007/bf02868729. ISSN0197-0216.
↑ Olesinski, R. W.; Kanani, N.; Abbaschian, G. J. (1985). "The Ga−Si (Gallium-Silicon) system". Bulletin of Alloy Phase Diagrams. 6 (4). Springer Science and Business Media LLC: 362–364. doi:10.1007/bf02880523. ISSN0197-0216.
↑ Olesinski, R. W.; Kanani, N.; Abbaschian, G. J. (1985). "The In−Si (Indium-Silicon) system". Bulletin of Alloy Phase Diagrams. 6 (2). Springer Science and Business Media LLC: 128–130. doi:10.1007/bf02869223. ISSN0197-0216.
↑ Olesinski, R. W.; Abbaschian, G. J. (1985). "The Si-Zn (Silicon-Thallium) system". Bulletin of Alloy Phase Diagrams. 6 (6). Springer Science and Business Media LLC: 543–544. doi:10.1007/bf02887155. ISSN0197-0216.
↑ Olesinski, R. W.; Abbaschian, G. J. (1984). "The Ge−Si (Germanium-Silicon) system". Bulletin of Alloy Phase Diagrams. 5 (2). Springer Science and Business Media LLC: 180–183. doi:10.1007/bf02868957. ISSN0197-0216.
↑ Olesinski, R. W.; Abbaschian, G. J. (1984). "The Si−Sn (Silicon−Tin) system". Bulletin of Alloy Phase Diagrams. 5 (3). Springer Science and Business Media LLC: 273–276. doi:10.1007/bf02868552. ISSN0197-0216.
↑ Olesinski, R. W.; Abbaschian, G. J. (1984). "The Pb−Si (Lead−Silicon) system". Bulletin of Alloy Phase Diagrams. 5 (3). Springer Science and Business Media LLC: 271–273. doi:10.1007/bf02868551. ISSN0197-0216.
↑ Carlson, O. N. (1990). "The N-Si (Nitrogen-Silicon) system". Bulletin of Alloy Phase Diagrams. 11 (6). Springer Science and Business Media LLC: 569–573. doi:10.1007/bf02841719. ISSN0197-0216.
↑ Maier, Günther; Reisenauer, Hans Peter; Glatthaar, Jörg (2000-10-21). "Reactions of Silicon Atoms with Nitrogen: A Combined Matrix Spectroscopic and Density Functional Theory Study1". Organometallics. 19 (23). American Chemical Society (ACS): 4775–4783. doi:10.1021/om000234r. ISSN0276-7333.
↑ Olesinski, R. W.; Kanani, N.; Abbaschian, G. J. (1985). "The P−Si (Phosphorus-Silicon) system". Bulletin of Alloy Phase Diagrams. 6 (2). Springer Science and Business Media LLC: 130–133. doi:10.1007/bf02869224. ISSN0197-0216.
↑ Carlsson, J. R. A.; Madsen, L. D.; Johansson, M. P.; Hultman, L.; Li, X.-H.; Hentzell, H. T. G.; Wallenberg, L. R. (1997). "A new silicon phosphide, Si12P5: Formation conditions, structure, and properties". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15 (2). American Vacuum Society: 394–401. Bibcode:1997JVSTA..15..394C. doi:10.1116/1.580497. ISSN0734-2101.
↑ Huang, M.; Feng, Y.P. (2004). "Further study on structural and electronic properties of silicon phosphide compounds with 3:4 stoichiometry". Computational Materials Science. 30 (3–4). Elsevier BV: 371–375. doi:10.1016/j.commatsci.2004.02.031. ISSN0927-0256.
↑ Olesinski, R. W.; Abbaschian, G. J. (1985). "The As−Si (Arsenic-Silicon) system". Bulletin of Alloy Phase Diagrams. 6 (3). Springer Science and Business Media LLC: 254–258. doi:10.1007/bf02880410. ISSN0197-0216.
↑ Olesinski, R. W.; Abbaschian, G. J. (1985). "The Sb-Si (Antimony-Silicon) system". Bulletin of Alloy Phase Diagrams. 6 (5). Springer Science and Business Media LLC: 445–448. doi:10.1007/bf02869508. ISSN0197-0216.
↑ Olesinski, R. W.; Abbaschian, G. J. (1985). "The Bi−Si (Bismuth-Silicon) system". Bulletin of Alloy Phase Diagrams. 6 (4). Springer Science and Business Media LLC: 359–361. doi:10.1007/bf02880522. ISSN0197-0216.
↑ Wrledt, H. A. (1990). "The O-Si (Oxygen-Silicon) system". Bulletin of Alloy Phase Diagrams. 11 (1). Springer Science and Business Media LLC: 43–61. doi:10.1007/bf02841583. ISSN0197-0216.
↑ Mück, Leonie Anna; Lattanzi, Valerio; Thorwirth, Sven; McCarthy, Michael C.; Gauss, Jürgen (2012-02-28). "Cyclic SiS2: A New Perspective on the Walsh Rules". Angewandte Chemie International Edition. 51 (15). Wiley: 3695–3698. doi:10.1002/anie.201108982. ISSN1433-7851. PMID22374622.
↑ Okamoto, H. (2000). "Se-Si (Selenium-Silicon)". Journal of Phase Equilibria. 21 (5). Springer Science and Business Media LLC: 499. doi:10.1361/105497100770339815. ISSN1054-9714.
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