Narrow-gap semiconductors are semiconducting materials with a magnitude of bandgap that is smaller than 0.5 eV, which corresponds to an infrared absorption cut-off wavelength over 2.5 micron. A more extended definition includes all semiconductors with bandgaps smaller than silicon (1.1 eV). [1] [2] Modern terahertz, [3] infrared, [4] and thermographic [5] technologies are all based on this class of semiconductors.
Narrow-gap materials made it possible to realize satellite remote sensing, [6] photonic integrated circuits for telecommunications, [7] [8] [9] and unmanned vehicle Li-Fi systems, [10] in the regime of Infrared detector and infrared vision. [11] [12] They are also the materials basis for terahertz technology, including security surveillance of concealed weapon uncovering, [13] [14] [15] safe medical and industrial imaging with terahertz tomography, [16] [17] [18] as well as dielectric wakefield accelerators. [19] [20] [21] Besides, thermophotovoltaics embedded with narrow-gap semiconductors can potentially use the traditionally wasted portion of solar energy that takes up ~49% of the sun light spectrum. [22] [23] Space crafts, deep ocean instruments, and vacuum physics setups use narrow-gap semiconductors to achieve cryogenic cooling. [24] [25]
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Name | Chemical formula | Groups | Band gap (300 K) |
---|---|---|---|
Mercury cadmium telluride | Hg1−xCdxTe | II-VI | 0 to 1.5 eV |
Mercury zinc telluride | Hg1−xZnxTe | II-VI | 0.15 to 2.25 eV |
Lead selenide | PbSe | IV-VI | 0.27 eV |
Lead(II) sulfide | PbS | IV-VI | 0.37 eV |
Lead telluride | PbTe | IV-VI | 0.32 eV |
Indium arsenide | InAs | III-V | 0.354 eV |
Indium antimonide | InSb | III-V | 0.17 eV |
Gallium antimonide | GaSb | III-V | 0.67 eV |
Cadmium arsenide | Cd3As2 | II-V | 0.5 to 0.6 eV |
Bismuth telluride | Bi2Te3 | 0.21 eV | |
Tin telluride | SnTe | IV-VI | 0.18 eV |
Tin selenide | SnSe | IV-VI | 0.9 eV |
Silver(I) selenide | Ag2Se | 0.07 eV | |
Magnesium silicide | Mg2Si | II-IV | 0.79 eV [26] |
In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there is no generated current due to no net charge carrier mobility. However, if some electrons transfer from the valence band to the conduction band, then current can flow. Therefore, the band gap is a major factor determining the electrical conductivity of a solid. Substances having large band gaps are generally insulators, those with small band gaps are semiconductor, and conductors either have very small band gaps or none, because the valence and conduction bands overlap to form a continuous band.
A photonic crystal is an optical nanostructure in which the refractive index changes periodically. This affects the propagation of light in the same way that the structure of natural crystals gives rise to X-ray diffraction and that the atomic lattices of semiconductors affect their conductivity of electrons. Photonic crystals occur in nature in the form of structural coloration and animal reflectors, and, as artificially produced, promise to be useful in a range of applications.
Terahertz radiation – also known as submillimeter radiation, terahertz waves, tremendously high frequency (THF), T-rays, T-waves, T-light, T-lux or THz – consists of electromagnetic waves within the ITU-designated band of frequencies from 0.3 to 3 terahertz (THz), although the upper boundary is somewhat arbitrary and is considered by some sources as 30 THz. One terahertz is 1012 Hz or 1000 GHz. Wavelengths of radiation in the terahertz band correspondingly range from 1 mm to 0.1 mm = 100 µm. Because terahertz radiation begins at a wavelength of around 1 millimeter and proceeds into shorter wavelengths, it is sometimes known as the submillimeter band, and its radiation as submillimeter waves, especially in astronomy. This band of electromagnetic radiation lies within the transition region between microwave and far infrared, and can be regarded as either.
Wide-bandgap semiconductors are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators.
Polaritonics is an intermediate regime between photonics and sub-microwave electronics. In this regime, signals are carried by an admixture of electromagnetic and lattice vibrational waves known as phonon-polaritons, rather than currents or photons. Since phonon-polaritons propagate with frequencies in the range of hundreds of gigahertz to several terahertz, polaritonics bridges the gap between electronics and photonics. A compelling motivation for polaritonics is the demand for high speed signal processing and linear and nonlinear terahertz spectroscopy. Polaritonics has distinct advantages over electronics, photonics, and traditional terahertz spectroscopy in that it offers the potential for a fully integrated platform that supports terahertz wave generation, guidance, manipulation, and readout in a single patterned material.
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. Indium antimonide detectors are sensitive to infrared wavelengths between 1 and 5 μm.
Quantum-cascade lasers (QCLs) are semiconductor lasers that emit in the mid- to far-infrared portion of the electromagnetic spectrum and were first demonstrated by Jérôme Faist, Federico Capasso, Deborah Sivco, Carlo Sirtori, Albert Hutchinson, and Alfred Cho at Bell Laboratories in 1994.
Thermophotovoltaic (TPV) energy conversion is a direct conversion process from heat to electricity via photons. A basic thermophotovoltaic system consists of a hot object emitting thermal radiation and a photovoltaic cell similar to a solar cell but tuned to the spectrum being emitted from the hot object.
An infrared detector is a detector that reacts to infrared (IR) radiation. The two main types of detectors are thermal and photonic (photodetectors).
Sound amplification by stimulated emission of radiation (SASER) refers to a device that emits acoustic radiation. It focuses sound waves in a way that they can serve as accurate and high-speed carriers of information in many kinds of applications—similar to uses of laser light.
A quantum dot solar cell (QDSC) is a solar cell design that uses quantum dots as the captivating photovoltaic material. It attempts to replace bulk materials such as silicon, copper indium gallium selenide (CIGS) or cadmium telluride (CdTe). Quantum dots have bandgaps that are adjustable across a wide range of energy levels by changing their size. In bulk materials, the bandgap is fixed by the choice of material(s). This property makes quantum dots attractive for multi-junction solar cells, where a variety of materials are used to improve efficiency by harvesting multiple portions of the solar spectrum.
Terahertz tomography is a class of tomography where sectional imaging is done by terahertz radiation. Terahertz radiation is electromagnetic radiation with a frequency between 0.1 and 10 THz; it falls between radio waves and light waves on the spectrum; it encompasses portions of the millimeter waves and infrared wavelengths. Because of its high frequency and short wavelength, terahertz wave has a high signal-to-noise ratio in the time domain spectrum. Tomography using terahertz radiation can image samples that are opaque in the visible and near-infrared regions of the spectrum. Terahertz wave three-dimensional (3D) imaging technology has developed rapidly since its first successful application in 1997, and a series of new 3D imaging technologies have been proposed successively.
A terahertz metamaterial is a class of composite metamaterials designed to interact at terahertz (THz) frequencies. The terahertz frequency range used in materials research is usually defined as 0.1 to 10 THz.
A tunable metamaterial is a metamaterial with a variable response to an incident electromagnetic wave. This includes remotely controlling how an incident electromagnetic wave interacts with a metamaterial. This translates into the capability to determine whether the EM wave is transmitted, reflected, or absorbed. In general, the lattice structure of the tunable metamaterial is adjustable in real time, making it possible to reconfigure a metamaterial device during operation. It encompasses developments beyond the bandwidth limitations in left-handed materials by constructing various types of metamaterials. The ongoing research in this domain includes electromagnetic materials that are very meta which mean good and has a band gap metamaterials (EBG), also known as photonic band gap (PBG), and negative refractive index material (NIM).
A photonic metamaterial (PM), also known as an optical metamaterial, is a type of electromagnetic metamaterial, that interacts with light, covering terahertz (THz), infrared (IR) or visible wavelengths. The materials employ a periodic, cellular structure.
A metamaterial absorber is a type of metamaterial intended to efficiently absorb electromagnetic radiation such as light. Furthermore, metamaterials are an advance in materials science. Hence, those metamaterials that are designed to be absorbers offer benefits over conventional absorbers such as further miniaturization, wider adaptability, and increased effectiveness. Intended applications for the metamaterial absorber include emitters, photodetectors, sensors, spatial light modulators, infrared camouflage, wireless communication, and use in solar photovoltaics and thermophotovoltaics.
The superconducting nanowire single-photon detector is a type of optical and near-infrared single-photon detector based on a current-biased superconducting nanowire. It was first developed by scientists at Moscow State Pedagogical University and at the University of Rochester in 2001. The first fully operational prototype was demonstrated in 2005 by the National Institute of Standards and Technology (Boulder), and BBN Technologies as part of the DARPA Quantum Network.
TeraView Limited, or TeraView, is a company that designs terahertz imaging and spectroscopy instruments and equipment for measurement and evaluation of pharmaceutical tablets, nanomaterials, ceramics and composites, integrated circuit chips and more.
Band-gap engineering is the process of controlling or altering the band gap of a material. This is typically done to semiconductors by controlling the composition of alloys, constructing layered materials with alternating compositions, or by inducing strain either epitaxially or topologically. A band gap is the range in a solid where no electron state can exist. The band gap of insulators is much larger than in semiconductors. Conductors or metals have a much smaller or nonexistent band gap than semiconductors since the valence and conduction bands overlap. Controlling the band gap allows for the creation of desirable electrical properties.