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A diode is a two-terminal electronic component that conducts current primarily in one direction. It has low resistance in one direction and high resistance in the other.
A Zener diode is a special type of diode designed to reliably allow current to flow "backwards" when a certain set reverse voltage, known as the Zener voltage, is reached.
A thyristor is a solid-state semiconductor device with four layers of alternating P- and N-type materials used for high-power applications. It acts as a bistable switch. There are two designs, differing in what triggers the conducting state. In a three-lead thyristor, a small current on its gate lead controls the larger current of the anode-to-cathode path. In a two-lead thyristor, conduction begins when the potential difference between the anode and cathode themselves is sufficiently large. The thyristor continues conducting until the voltage across the device is reverse-biased or the voltage is removed, or through the control gate signal on newer types.
The Schottky diode, also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.
In electronics, an avalanche diode is a diode that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown. The avalanche breakdown is due to minority carriers accelerated enough to create ionization in the crystal lattice, producing more carriers, which in turn create more ionization. Because the avalanche breakdown is uniform across the whole junction, the breakdown voltage is nearly constant with changing current when compared to a non-avalanche diode.
An avalanche photodiode (APD) is a highly sensitive semiconductor photodiode detector that exploits the photoelectric effect to convert light into electricity. From a functional standpoint, they can be regarded as the semiconductor analog of photomultiplier tubes. The avalanche photodiode was invented by Japanese engineer Jun-ichi Nishizawa in 1952. However, study of avalanche breakdown, microplasma defects in silicon and germanium and the investigation of optical detection using p-n junctions predate this patent. Typical applications for APDs are laser rangefinders, long-range fiber-optic telecommunication, and quantum sensing for control algorithms. New applications include positron emission tomography and particle physics.
A transient-voltage-suppression (TVS) diode, also transil, transorb or thyrector, is an electronic component used to protect electronics from voltage spikes induced on connected wires.
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell Laboratories in January 1958. The SCR was developed by a team of power engineers led by Gordon Hall and commercialized by Frank W. "Bill" Gutzwiller in 1957.
A TRIAC is a three-terminal electronic component that conducts current in either direction when triggered. The term TRIAC is a genericised trademark.
Pro Electron or EECA is the European type designation and registration system for active components.
The 555 timer IC is an integrated circuit used in a variety of timer, delay, pulse generation, and oscillator applications. It is one of the most popular timing ICs due to its flexibility and price. Derivatives provide two or four timing circuits in one package. The design was first marketed in 1972 by Signetics and used bipolar junction transistors. Since then, numerous companies have made the original timers and later similar low-power CMOS timers. In 2017, it was said that over a billion 555 timers are produced annually by some estimates, and that the design was "probably the most popular integrated circuit ever made".
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki when working at Tokyo Tsushin Kogyo, now known as Sony. In 1973, Esaki received the Nobel Prize in Physics for experimental demonstration of the electron tunneling effect in semiconductors. Robert Noyce independently devised the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it. Tunnel diodes were first manufactured by Sony in 1957, followed by General Electric and other companies from about 1960, and are still made in low volume today.
A voltage reference is an electronic device that ideally produces a fixed (constant) voltage irrespective of the loading on the device, power supply variations, temperature changes, and the passage of time. Voltage references are used in power supplies, analog-to-digital converters, digital-to-analog converters, and other measurement and control systems. Voltage references vary widely in performance; a regulator for a computer power supply may only hold its value to within a few percent of the nominal value, whereas laboratory voltage standards have precisions and stability measured in parts per million.
The 1N4148 is a standard silicon switching signal diode. It is one of the most popular and long-lived switching diodes because of its dependable specifications and low cost. Its name follows the JEDEC nomenclature. The 1N4148 is useful in switching applications up to about 100 MHz with a reverse-recovery time of no more than 4 ns.
A constant-current diode is an electronic device that limits current to a maximal specified value for the device. It is known as a current-limiting diode (CLD) or current-regulating diode (CRD).
The 1N400x series is a family of popular one-ampere general-purpose silicon rectifier diodes commonly used in AC adapters for common household appliances. Its blocking voltage varies from 50 volts (1N4001) to 1000 volts (1N4007). This JEDEC device number series is available in the DO-41 axial package. Diodes with similar ratings are available in SMA and MELF surface mount packages.
The BZX79 series is a family of low voltage regulator diode. The diode is made in axial-lead DO-35 glass package. Regulating voltages varies from 2.4V to 75V with a total power dissipation maximum of 500 mW.
The TL431 integrated circuit (IC) is a three-terminal adjustable precise shunt voltage regulator. With the use of an external voltage divider, a TL431 can regulate voltages ranging from 2.495 to 36 V, at currents up 100 mA. The typical initial deviation of reference voltage from the nominal 2.495 V level is measured in millivolts, the maximum worst-case deviation is measured in tens of millivolts. The circuit can control power transistors directly; combinations of the TL431 with power MOS transistors are used in high efficiency, very low dropout linear regulators. The TL431 is the de facto industry standard error amplifier circuit for switched-mode power supplies with optoelectronic coupling of the input and output networks.
References
- ↑ "Stabistor information at Central Semiconductor web site". Archived from the original on 2016-03-05. Retrieved 2014-06-13.
- 1 2 "MPD100 Datasheet by Microsemi Corp" (PDF). Retrieved 2012-02-06.
- 1 2 "BAS17 product page at NXP Semiconductors". Archived from the original on 2013-07-22. Retrieved 2012-02-04.
- ↑ "BAS17 Datasheet by NXP Semiconductors" (PDF). 2003-03-25. Archived from the original (PDF) on 2012-05-12. Retrieved 2012-02-04.
- ↑ "CBAS17 Datasheet by Central Semiconductor" (PDF). 2009-11-20. Retrieved 2012-02-04.
- ↑ "CMXSTB200 Series datasheet by Central Semiconductor" (PDF). 2010-02-12. Retrieved 2012-02-04.