|Working principle||Zener breakdown|
|Invented||Clarence Melvin Zener|
|Pin configuration||anode and cathode|
A Zener diode is a particular type of diode that, unlike a normal one, allows current to flow not only from its anode to its cathode, but also in the reverse direction, when the Zener voltage is reached.
A diode is a two-terminal electronic component that conducts current primarily in one direction ; it has low resistance in one direction, and high resistance in the other. A diode vacuum tube or thermionic diode is a vacuum tube with two electrodes, a heated cathode and a plate, in which electrons can flow in only one direction, from cathode to plate. A semiconductor diode, the most common type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. Semiconductor diodes were the first semiconductor electronic devices. The discovery of asymmetric electrical conduction across the contact between a crystalline mineral and a metal was made by German physicist Ferdinand Braun in 1874. Today, most diodes are made of silicon, but other materials such as gallium arsenide and germanium are used.
Zener diodes have a highly doped p-n junction. Normal diodes will also break down with a reverse voltage but the voltage and sharpness of the knee are not as well defined as for a Zener diode. Also normal diodes are not designed to operate in the breakdown region, but Zener diodes can reliably operate in this region.
The breakdown voltage of an insulator is the minimum voltage that causes a portion of an insulator to become electrically conductive.
The device was named after Clarence Melvin Zener, who discovered the Zener effect. Zener reverse breakdown is due to electron quantum tunnelling caused by a high-strength electric field. However, many diodes described as "Zener" diodes rely instead on avalanche breakdown. Both breakdown types are used in Zener diodes with the Zener effect predominating under 5.6 V and avalanche breakdown above.
Clarence Melvin Zener was the American physicist who first (1934) described the property concerning the breakdown of electrical insulators. These findings were later exploited by Bell Labs in the development of the Zener diode, which was duly named after him. Zener was a theoretical physicist with a background in mathematics who conducted research in a wide range of subjects including: superconductivity, metallurgy, ferromagnetism, elasticity, fracture mechanics, diffusion, and geometric programming.
In electronics, the Zener effect is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor, leading to a large number of free minority carriers which suddenly increase the reverse current.
Quantum tunnelling or tunneling is the quantum mechanical phenomenon where a subatomic particle passes through a potential barrier that it cannot surmount under the provision of classical mechanics.
Zener diodes are widely used in electronic equipment of all kinds and are one of the basic building blocks of electronic circuits. They are used to generate low power stabilized supply rails from a higher voltage and to provide reference voltages for circuits, especially stabilized power supplies. They are also used to protect circuits from overvoltage, especially electrostatic discharge (ESD).
When the voltage in a circuit or part of it is raised above its upper design limit, this is known as overvoltage. The conditions may be hazardous. Depending on its duration, the overvoltage event can be transient—a voltage spike—or permanent, leading to a power surge.
Electrostatic discharge (ESD) is the sudden flow of electricity between two electrically charged objects caused by contact, an electrical short, or dielectric breakdown. A buildup of static electricity can be caused by tribocharging or by electrostatic induction. The ESD occurs when differently-charged objects are brought close together or when the dielectric between them breaks down, often creating a visible spark.
A conventional solid-state diode allows significant current if it is reverse-biased above its reverse breakdown voltage. When the reverse bias breakdown voltage is exceeded, a conventional diode is subject to high current due to avalanche breakdown. Unless this current is limited by circuitry, the diode may be permanently damaged due to overheating. A Zener diode exhibits almost the same properties, except the device is specially designed so as to have a reduced breakdown voltage, the so-called Zener voltage. By contrast with the conventional device, a reverse-biased Zener diode exhibits a controlled breakdown and allows the current to keep the voltage across the Zener diode close to the Zener breakdown voltage. For example, a diode with a Zener breakdown voltage of 3.2 V exhibits a voltage drop of very nearly 3.2 V across a wide range of reverse currents. The Zener diode is therefore ideal for applications such as the generation of a reference voltage (e.g. for an amplifier stage), or as a voltage stabilizer for low-current applications.
Avalanche breakdown is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents within materials which are otherwise good insulators. It is a type of electron avalanche. The avalanche process occurs when carriers in the transition region are accelerated by the electric field to energies sufficient to create mobile or free electron-hole pairs via collisions with bound electrons.
A voltage reference is an electronic device that ideally produces a fixed (constant) voltage irrespective of the loading on the device, power supply variations, temperature changes, and the passage of time. Voltage references are used in power supplies, analog-to-digital converters, digital-to-analog converters, and other measurement and control systems. Voltage references vary widely in performance; a regulator for a computer power supply may only hold its value to within a few percent of the nominal value, whereas laboratory voltage standards have precisions and stability measured in parts per million.
An amplifier, electronic amplifier or (informally) amp is an electronic device that can increase the power of a signal. It is a two-port electronic circuit that uses electric power from a power supply to increase the amplitude of a signal applied to its input terminals, producing a proportionally greater amplitude signal at its output. The amount of amplification provided by an amplifier is measured by its gain: the ratio of output voltage, current, or power to input. An amplifier is a circuit that has a power gain greater than one.
Another mechanism that produces a similar effect is the avalanche effect as in the avalanche diode. volts, the Zener effect is the predominant effect and shows a marked negative temperature coefficient. Above 5.6 volts, the avalanche effect becomes predominant and exhibits a positive temperature coefficient.The two types of diode are in fact constructed the same way and both effects are present in diodes of this type. In silicon diodes up to about 5.6
In electronics, an avalanche diode is a diode that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown. The avalanche breakdown is due to minority carriers accelerated enough to create ionization in the crystal lattice, producing more carriers which in turn create more ionization. Because the avalanche breakdown is uniform across the whole junction, the breakdown voltage is nearly constant with changing current when compared to a non-avalanche diode.
A temperature coefficient describes the relative change of a physical property that is associated with a given change in temperature. For a property R that changes by dR when the temperature changes by dT, the temperature coefficient α is defined by the following equation:
In a 5.6 V diode, the two effects occur together, and their temperature coefficients nearly cancel each other out, thus the 5.6 V diode is useful in temperature-critical applications. An alternative, which is used for voltage references that need to be highly stable over long periods of time, is to use a Zener diode with a temperature coefficient (TC) of +2 mV/°C (breakdown voltage 6.2–6.3 V) connected in series with a forward-biased silicon diode (or a transistor B-E junction) manufactured on the same chip. The forward-biased diode has a temperature coefficient of −2 mV/°C, causing the TCs to cancel out.
Modern manufacturing techniques have produced devices with voltages lower than 5.6 V with negligible temperature coefficients,[ citation needed ] but as higher-voltage devices are encountered, the temperature coefficient rises dramatically. A 75 V diode has 10 times the coefficient of a 12 V diode.[ citation needed ]
Zener and avalanche diodes, regardless of breakdown voltage, are usually marketed under the umbrella term of "Zener diode".
Under 5.6 V, where the Zener effect dominates, the IV curve near breakdown is much more rounded, which calls for more care in targeting its biasing conditions. The IV curve for Zeners above 5.6 V (being dominated by Avalanche), is much sharper at breakdown.
The Zener diode's operation depends on the heavy doping of its p-n junction. The depletion region formed in the diode is very thin (<1 µm) and the electric field is consequently very high (about 500 kV/m) even for a small reverse bias voltage of about 5 V, allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material.
At the atomic scale, this tunnelling corresponds to the transport of valence band electrons into the empty conduction band states; as a result of the reduced barrier between these bands and high electric fields that are induced due to the relatively high levels of doping on both sides. volts to 200 volts.The breakdown voltage can be controlled quite accurately in the doping process. While tolerances within 0.07% are available, the most widely used tolerances are 5% and 10%. Breakdown voltage for commonly available Zener diodes can vary widely from 1.2
For diodes that are lightly doped the breakdown is dominated by the avalanche effect rather than the Zener effect. Consequently, the breakdown voltage is higher (over 5.6 V) for these devices.
The emitter-base junction of a bipolar NPN transistor behaves as a Zener diode, with breakdown voltage at about 6.8 V for common bipolar processes and about 10 V for lightly doped base regions in BiCMOS processes. Older processes with poor control of doping characteristics had the variation of Zener voltage up to ±1 V, newer processes using ion implantation can achieve no more than ±0.25 V. The NPN transistor structure can be employed as a surface Zener diode, with collector and emitter connected together as its cathode and base region as anode. In this approach the base doping profile usually narrows towards the surface, creating a region with intensified electric field where the avalanche breakdown occurs. The hot carriers produced by acceleration in the intense field sometime shoot into the oxide layer above the junction and become trapped there. The accumulation of trapped charges can then cause 'Zener walkout', a corresponding change of the Zener voltage of the junction. The same effect can be achieved by radiation damage.
The emitter-base Zener diodes can handle only smaller currents as the energy is dissipated in the base depletion region which is very small. Higher amount of dissipated energy (higher current for longer time, or a short very high current spike) causes thermal damage to the junction and/or its contacts. Partial damage of the junction can shift its Zener voltage. Total destruction of the Zener junction by overheating it and causing migration of metallization across the junction ("spiking") can be used intentionally as a 'Zener zap' antifuse.
A subsurface Zener diode, also called 'buried Zener', is a device similar to the Surface Zener, but with the avalanche region located deeper in the structure, typically several micrometers below the oxide. The hot carriers then lose energy by collisions with the semiconductor lattice before reaching the oxide layer and cannot be trapped there. The Zener walkout phenomenon therefore does not occur here, and the buried Zeners have voltage constant over their entire lifetime. Most buried Zeners have breakdown voltage of 5–7 volts. Several different junction structures are used.
Zener diodes are widely used as voltage references and as shunt regulators to regulate the voltage across small circuits. When connected in parallel with a variable voltage source so that it is reverse biased, a Zener diode conducts when the voltage reaches the diode's reverse breakdown voltage. From that point on, the relatively low impedance of the diode keeps the voltage across the diode at that value.
In this circuit, a typical voltage reference or regulator, an input voltage, Uin, is regulated down to a stable output voltage Uout. The breakdown voltage of diode D is stable over a wide current range and holds Uout relatively constant even though the input voltage may fluctuate over a fairly wide range. Because of the low impedance of the diode when operated like this, resistor R is used to limit current through the circuit.
In the case of this simple reference, the current flowing in the diode is determined using Ohm's law and the known voltage drop across the resistor R;
The value of R must satisfy two conditions:
A load may be placed across the diode in this reference circuit, and as long as the Zener stays in reverse breakdown, the diode provides a stable voltage source to the load. Zener diodes in this configuration are often used as stable references for more advanced voltage regulator circuits.
Shunt regulators are simple, but the requirements that the ballast resistor be small enough to avoid excessive voltage drop during worst-case operation (low input voltage concurrent with high load current) tends to leave a lot of current flowing in the diode much of the time, making for a fairly wasteful regulator with high quiescent power dissipation, only suitable for smaller loads.
These devices are also encountered, typically in series with a base-emitter junction, in transistor stages where selective choice of a device centered on the avalanche or Zener point can be used to introduce compensating temperature co-efficient balancing of the transistor p–n junction. An example of this kind of use would be a DC error amplifier used in a regulated power supply circuit feedback loop system.
Zener diodes are also used in surge protectors to limit transient voltage spikes.
Another application of the Zener diode is the use of noise caused by its avalanche breakdown in a random number generator.
Two Zener diodes facing each other in series will act to clip both halves of an input signal. Waveform clippers can be used not only to reshape a signal, but also to prevent voltage spikes from affecting circuits that are connected to the power supply.
A Zener diode can be applied to a circuit with a resistor to act as a voltage shifter. This circuit lowers the output voltage by a quantity that is equal to the Zener diode's breakdown voltage.
A Zener diode can be applied in a voltage regulator circuit to regulate the voltage applied to a load, such as in a linear regulator.
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A bipolar junction transistor is a type of transistor that uses both electron and hole charge carriers. In contrast, unipolar transistors, such as field-effect transistors, only use one kind of charge carrier. For their operation, BJTs use two junctions between two semiconductor types, n-type and p-type.
In electronics, a linear regulator is a system used to maintain a steady voltage. The resistance of the regulator varies in accordance with the load resulting in a constant output voltage. The regulating device is made to act like a variable resistor, continuously adjusting a voltage divider network to maintain a constant output voltage and continually dissipating the difference between the input and regulated voltages as waste heat. By contrast, a switching regulator uses an active device that switches on and off to maintain an average value of output. Because the regulated voltage of a linear regulator must always be lower than input voltage, efficiency is limited and the input voltage must be high enough to always allow the active device to drop some voltage.
The Schottky diode, also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.
In electronics, a varicap diode, varactor diode, variable capacitance diode, variable reactance diode or tuning diode is a type of diode designed to exploit the voltage-dependent capacitance of a reverse-biased p–n junction.
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell Laboratories in January 1958. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The SCR was developed by a team of power engineers led by Gordon Hall and commercialized by Frank W. "Bill" Gutzwiller in 1957.
A tunnel diode or Esaki diode is a type of semiconductor diode that has negative resistance due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki, Yuriko Kurose, and Takashi Suzuki when they were working at Tokyo Tsushin Kogyo, now known as Sony. In 1973, Esaki received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes. Robert Noyce independently devised the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it. Tunnel diodes were first manufactured by Sony in 1957, followed by General Electric and other companies from about 1960, and are still made in low volume today.
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electrical current to pass through the junction only in one direction. The p-n junction is created by doping, for example by ion implantation, diffusion of dopants, or by epitaxy. If two separate pieces of material were used, this would introduce a grain boundary between the semiconductors that would severely inhibit its utility by scattering the electrons and holes.
A voltage regulator is a system designed to automatically maintain a constant voltage level. A voltage regulator may use a simple feed-forward design or may include negative feedback. It may use an electromechanical mechanism, or electronic components. Depending on the design, it may be used to regulate one or more AC or DC voltages.
A current source is an electronic circuit that delivers or absorbs an electric current which is independent of the voltage across it.
An avalanche transistor is a bipolar junction transistor designed for operation in the region of its collector-current/collector-to-emitter voltage characteristics beyond the collector-to-emitter breakdown voltage, called avalanche breakdown region. This region is characterized by avalanche breakdown, which is a phenomenon similar to Townsend discharge for gases, and negative differential resistance. Operation in the avalanche breakdown region is called avalanche-mode operation: it gives avalanche transistors the ability to switch very high currents with less than a nanosecond rise and fall times. Transistors not specifically designed for the purpose can have reasonably consistent avalanche properties; for example 82% of samples of the 15V high-speed switch 2N2369, manufactured over a 12-year period, were capable of generating avalanche breakdown pulses with rise time of 350 ps or less, using a 90V power supply as Jim Williams writes.
In electronics, a clipper is a circuit designed to prevent the output from exceeding a predetermined reference voltage level. A clipper does not distort the remaining part of the applied waveform. Clipping circuits are used to select, for purposes of transmission, that part of a signal waveform which lies above or below the predetermined reference voltage level.
Diode logic (DL), or diode-resistor logic (DRL), is the construction of Boolean logic gates from diodes. Diode logic was used extensively in the construction of early computers, where semiconductor diodes could replace bulky and costly active vacuum tube elements. The most common use for diode logic is in diode–transistor logic (DTL) integrated circuits that, in addition to diodes, include inverter logic for power gain and signal restoration.
A joule thief is a minimalist self-oscillating voltage booster that is small, low-cost, and easy to build, typically used for driving small loads. This circuit is also known by other names such as blocking oscillator, joule ringer, vampire torch.
A noise figure meter is an instrument for measuring the noise figure of an amplifier, mixer, or similar device. An example instrument is the 1983-era Agilent 8970A.
A noise generator is a circuit that produces electrical noise. Noise generators are used to test signals for measuring noise figure, frequency response, and other parameters. Noise generators are also used for generating random numbers.