A diode is a two-terminal electronic component that conducts current primarily in one direction. It has low resistance in one direction and high resistance in the other.
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current between the remaining two terminals, making the device capable of amplification or switching.
A thyristor is a solid-state semiconductor device which can be thought of as being a highly robust and switchable diode, allowing the passage of current in one direction but not the other, often under control of a gate electrode, that is used in high power applications like inverters and radar generators. It usually consists of four layers of alternating P- and N-type materials. It acts as a bistable switch. There are two designs, differing in what triggers the conducting state. In a three-lead thyristor, a small current on its gate lead controls the larger current of the anode-to-cathode path. In a two-lead thyristor, conduction begins when the potential difference between the anode and cathode themselves is sufficiently large. The thyristor continues conducting until the voltage across the device is reverse-biased or the voltage is removed, or through the control gate signal on newer types.
In electronics, a linear regulator is a voltage regulator used to maintain a steady voltage. The resistance of the regulator varies in accordance with both the input voltage and the load, resulting in a constant voltage output. The regulating circuit varies its resistance, continuously adjusting a voltage divider network to maintain a constant output voltage and continually dissipating the difference between the input and regulated voltages as waste heat. By contrast, a switching regulator uses an active device that switches on and off to maintain an average value of output. Because the regulated voltage of a linear regulator must always be lower than input voltage, efficiency is limited and the input voltage must be high enough to always allow the active device to reduce the voltage by some amount.
The Schottky diode, also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.
In electronics, a varicap diode, varactor diode, variable capacitance diode, variable reactance diode or tuning diode is a type of diode designed to exploit the voltage-dependent capacitance of a reverse-biased p–n junction.
In electronics, an avalanche diode is a diode that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown. The avalanche breakdown is due to minority carriers accelerated enough to create ionization in the crystal lattice, producing more carriers, which in turn create more ionization. Because the avalanche breakdown is uniform across the whole junction, the breakdown voltage is nearly constant with changing current when compared to a non-avalanche diode.
An avalanche photodiode (APD) is a highly sensitive type of photodiode, which in general are semiconductor diodes that convert light into electricity via interband excitation coupled with impact ionization. APDs use materials and a structure optimised for operating with high reverse bias, approaching the reverse breakdown voltage, such that charge carriers generated by the photoelectric effect are multiplied by an avalanche breakdown; thus they can be used to detect relatively small amounts of light.
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell Laboratories in January 1958. The SCR was developed by a team of power engineers led by Gordon Hall and commercialized by Frank W. "Bill" Gutzwiller in 1957.
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony. In 1973, Esaki received the Nobel Prize in Physics for experimental demonstration of the electron tunneling effect in semiconductors. Robert Noyce independently devised the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it. Tunnel diodes were first manufactured by Sony in 1957, followed by General Electric and other companies from about 1960, and are still made in low volume today.
A p–n junction is a combination of two types of semiconductor materials, p-type and n-type, in a single crystal. The "n" (negative) side contains freely-moving electrons, while the "p" (positive) side contains freely-moving electron holes. Connecting the two materials causes creation of a depletion region near the boundary, as the free electrons fill the available holes, which in turn allows electric current to pass through the junction only in one direction.
A voltage regulator is a system designed to automatically maintain a constant voltage. It may use a simple feed-forward design or may include negative feedback. It may use an electromechanical mechanism, or electronic components. Depending on the design, it may be used to regulate one or more AC or DC voltages.
A current source is an electronic circuit that delivers or absorbs an electric current which is independent of the voltage across it.
A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics. Such a device is also called a power device or, when used in an integrated circuit, a power IC.
An electronic component is any basic discrete electronic device or physical entity part of an electronic system used to affect electrons or their associated fields. Electronic components are mostly industrial products, available in a singular form and are not to be confused with electrical elements, which are conceptual abstractions representing idealized electronic components and elements. A datasheet for an electronic component is a technical document that provides detailed information about the component's specifications, characteristics, and performance. Discrete circuits are made of individual electronic components that only perform one function each as packaged, which are known as discrete components, although strictly the term discrete component refers to such a component with semiconductor material such as individual transistors.
A voltage reference is an electronic device that ideally produces a fixed (constant) voltage irrespective of the loading on the device, power supply variations, temperature changes, and the passage of time. Voltage references are used in power supplies, analog-to-digital converters, digital-to-analog converters, and other measurement and control systems. Voltage references vary widely in performance; a regulator for a computer power supply may only hold its value to within a few percent of the nominal value, whereas laboratory voltage standards have precisions and stability measured in parts per million.
An avalanche transistor is a bipolar junction transistor designed for operation in the region of its collector-current/collector-to-emitter voltage characteristics beyond the collector-to-emitter breakdown voltage, called avalanche breakdown region. This region is characterized by avalanche breakdown, which is a phenomenon similar to Townsend discharge for gases, and negative differential resistance. Operation in the avalanche breakdown region is called avalanche-mode operation: it gives avalanche transistors the ability to switch very high currents with less than a nanosecond rise and fall times. Transistors not specifically designed for the purpose can have reasonably consistent avalanche properties; for example 82% of samples of the 15V high-speed switch 2N2369, manufactured over a 12-year period, were capable of generating avalanche breakdown pulses with rise time of 350 ps or less, using a 90V power supply as Jim Williams writes.
A noise-figure meter is an instrument for measuring the noise figure of an amplifier, mixer, or similar device. An example instrument is the 1983-era Agilent 8970A. The 8970A Noise Figure Meter is a Keysight product numbers that were formerly part of Agilent.
A noise generator is a circuit that produces electrical noise. Noise generators are used to test signals for measuring noise figure, frequency response, and other parameters. Noise generators are also used for generating random numbers.
In electronics, the Zener effect is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor, leading to numerous free minority carriers which suddenly increase the reverse current.
