Pentode transistor

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A pentode transistor is any transistor having five active terminals.

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Early pentode transistors

One early pentode transistor was developed in the early 1950s as an improvement over the point-contact transistor.

Pentode field-effect transistors having 3 gates, similar to vacuum tube pentodes have also been described [1]

Modern pentode transistors

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Electronics Technical field

Electronics comprises the physics, engineering, technology and applications that deal with the emission, flow and control of electrons in vacuum and matter.

A logic gate is an idealized or physical electronic device implementing a Boolean function, a logical operation performed on one or more binary inputs that produces a single binary output. Depending on the context, the term may refer to an ideal logic gate, one that has for instance zero rise time and unlimited fan-out, or it may refer to a non-ideal physical device.

A semiconductor material has an electrical conductivity value falling between that of a conductor, such as metallic copper, and an insulator, such as glass. Its resistance falls as its temperature rises; metals are the opposite. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently-doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions and electron holes, at these junctions is the basis of diodes, transistors and all modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits and others. Silicon is a critical element for fabricating most electronic circuits.

Transistor Solid-state electrically operated switch also used as an amplifier

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.

A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material for its function. Semiconductor devices have replaced vacuum tubes in most applications. They use electrical conduction in the solid state rather than the gaseous state or thermionic emission in a vacuum.

JFET type of field-effect transistor

The junction gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically-controlled switches, amplifiers, or voltage-controlled resistors.

Bipolar junction transistor transistor that uses both electrons and holes as charge carriers

A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and holes as charge carriers. Unipolar transistors, such as field-effect transistors, use only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between two other terminals, making the device capable of amplification or switching.

CMOS Technology for constructing integrated circuits

Complementary metal–oxide–semiconductor (CMOS), also known as complementary-symmetry metal–oxide–semiconductor (COS-MOS), is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips, and other digital logic circuits, and replaced earlier transistor-transistor logic (TTL) technology.

Gallium arsenide chemical compound

Gallium arsenide (GaAs) It is a III-V direct band gap semiconductor with a zinc blende crystal structure.

Organic field-effect transistor

An organic field-effect transistor (OFET) is a field-effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum evaporation of small molecules, by solution-casting of polymers or small molecules, or by mechanical transfer of a peeled single-crystalline organic layer onto a substrate. These devices have been developed to realize low-cost, large-area electronic products and biodegradable electronics. OFETs have been fabricated with various device geometries. The most commonly used device geometry is bottom gate with top drain and source electrodes, because this geometry is similar to the thin-film silicon transistor (TFT) using thermally grown SiO2 as gate dielectric. Organic polymers, such as poly(methyl-methacrylate) (PMMA), can also be used as dielectric.. One of the benefits of OFETs, especially compared with inorganic TFTs, is their unprecedented physical flexibility, which leads to biocompatible applications, for instance in the future health care industry of personalized biomedicines and bioelectronics.

IC power-supply pin

Almost all integrated circuits (ICs) have at least two pins that connect to the power rails of the circuit in which they are installed. These are known as the power-supply pins. However, the labeling of the pins varies by IC family and manufacturer.

Pentode electronic device having five active electrodes; the term most commonly applies to a three-grid amplifying vacuum tube

A pentode is an electronic device having five active electrodes. The term most commonly applies to a three-grid amplifying vacuum tube, which was invented by Gilles Holst and Bernhard D.H. Tellegen in 1926. The pentode consists of an evacuated glass envelope containing five electrodes in this order: a cathode heated by a filament, a control grid, a screen grid, a suppressor grid, and a plate (anode). The pentode was developed from the tetrode tube by the addition of a third grid, the suppressor grid. This served to prevent secondary emission electrons emitted by the plate from reaching the screen grid, which caused instability and parasitic oscillations in the tetrode. The pentode is closely related to the beam tetrode. Pentodes were widely used in industrial and consumer electronic equipment such as radios and televisions until the 1960s, when they were replaced by transistors. Their main use now is in high power industrial applications such as radio transmitters. The obsolete consumer tubes are still used in a few legacy and specialty vacuum tube audio devices.

NAND gate inverse of the AND gate, outputs if both inputs are not on simultaneously

In digital electronics, a NAND gate (NOT-AND) is a logic gate which produces an output which is false only if all its inputs are true; thus its output is complement to that of an AND gate. A LOW (0) output results only if all the inputs to the gate are HIGH (1); if any input is LOW (0), a HIGH (1) output results. A NAND gate is made using transistors and junction diodes. By De Morgan's theorem, a two-input NAND gate's logic may be expressed as AB=A+B, making a NAND gate equivalent to inverters followed by an OR gate.

Electronic symbol pictogram used to represent various electrical and electronic devices in a schematic diagram of an electrical or electronic circuit

An electronic symbol is a pictogram used to represent various electrical and electronic devices or functions, such as wires, batteries, resistors, and transistors, in a schematic diagram of an electrical or electronic circuit. These symbols are largely standardized internationally today, but may vary from country to country, or engineering discipline, based on traditional conventions.

Multigate device MOS field-effect transistor with more than one gate

A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a MOSFET that incorporates more than one gate into a single device. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET and the GAAFET, which are non-planar transistors, or 3D transistors.

A tetrode transistor is any transistor having four active terminals.

PMOS logic p-type MOSFETs to implement logic gates

P-type metal-oxide-semiconductor logic, PMOS or pMOS, is a type of digital circuit constructed using metal-oxide-semiconductor field effect transistors (MOSFET) with a p-type semiconductor source and drain printed on a bulk n-type "well". When activated, by lowering the voltage on the gate, the resulting circuit allows the conduction of electron holes between the source and drain, turning the circuit "on".

A transistor is a semiconductor device with at least three terminals for connection to an electric circuit. The vacuum-tube triode, also called a (thermionic) valve, was the transistor's precursor, introduced in 1907. The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925.

Dawon Kahng South Korean engineer

Dawon Kahng was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET, also known as the MOS transistor, with Mohamed Atalla in 1959. Atalla and Kahng developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment.

Field-effect transistor transistor that uses an electric field to control its electrical behaviour

The field-effect transistor (FET) is a type of transistor which uses an electric field to control the flow of current. FETs are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.

References

  1. US Patent 4,104,673 August 1,1978