Light-emitting transistor

Light-emitting transistor (LET)

Working principle‍	Electroluminescence
Inventor	Milton Feng Nick Holonyak

A light-emitting transistor or LET is a form of transistor that emits light. Higher efficiency than light-emitting diode (LED) is possible.

History

Reported in the January 5, 2004 issue of the journal Applied Physics Letters , Milton Feng and Nick Holonyak, ^[1] the inventor of the first practical light-emitting diode (LED) and the first semiconductor laser to operate in the visible spectrum, made the world's first light-emitting transistor. This hybrid device, fabricated by Feng's graduate student Walid Hafez, had one electrical input and two outputs (electrical output and optical output) and operated at a frequency of 1 MHz. The device was made of indium gallium phosphide, indium gallium arsenide, and gallium arsenide, and emitted infrared photons from the base layer. ^{[2] [3]}

See also

• Organic light-emitting transistor

References

1. Feng, M.; Holonyak, N.; Hafez, W. (2004). "Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors". Applied Physics Letters. 84 (1): 151–153. Bibcode:2004ApPhL..84..151F. doi: 10.1063/1.1637950 .
2. "First Light-Emitting Transistor". IEEE Spectrum.
3. New light-emitting transistor could revolutionize electronics industry