|Pin configuration||anode, cathode|
The DIAC is a diode that conducts electrical current only after its breakover voltage, VBO, has been reached momentarily. The term is an acronym of "diode for alternating current".
A diode is a two-terminal electronic component that conducts current primarily in one direction ; it has low resistance in one direction, and high resistance in the other. A diode vacuum tube or thermionic diode is a vacuum tube with two electrodes, a heated cathode and a plate, in which electrons can flow in only one direction, from cathode to plate. A semiconductor diode, the most common type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. Semiconductor diodes were the first semiconductor electronic devices. The discovery of asymmetric electrical conduction across the contact between a crystalline mineral and a metal was made by German physicist Ferdinand Braun in 1874. Today, most diodes are made of silicon, but other materials such as gallium arsenide and germanium are used.
Voltage, electric potential difference, electric pressure or electric tension is the difference in electric potential between two points. The difference in electric potential between two points in a static electric field is defined as the work needed per unit of charge to move a test charge between the two points. In the International System of Units, the derived unit for voltage is named volt. In SI units, work per unit charge is expressed as joules per coulomb, where 1 volt = 1 joule per 1 coulomb. The official SI definition for volt uses power and current, where 1 volt = 1 watt per 1 ampere. This definition is equivalent to the more commonly used 'joules per coulomb'. Voltage or electric potential difference is denoted symbolically by ∆V, but more often simply as V, for instance in the context of Ohm's or Kirchhoff's circuit laws.
When breakdown occurs, the diode enters a region of negative dynamic resistance, leading to a decrease in the voltage drop across the diode and, usually, a sharp increase in current through the diode. The diode remains in conduction until the current through it drops below a value characteristic for the device, called the holding current, IH. Below this value, the diode switches back to its high-resistance, non-conducting state. This behavior is bidirectional, meaning typically the same for both directions of current.
Most DIACs have a three-layer structure with breakover voltage of approximately 30 V. Their behavior is similar to that of a neon lamp, but it can be more precisely controlled and takes place at a lower voltage.
A neon lamp is a miniature gas discharge lamp. The lamp typically consists of a small glass capsule that contains a mixture of neon and other gases at a low pressure and two electrodes. When sufficient voltage is applied and sufficient current is supplied between the electrodes, the lamp produces an orange glow discharge. The glowing portion in the lamp is a thin region near the cathode; the larger and much longer neon signs are also glow discharges, but they use the positive column which is not present in the ordinary neon lamp. Neon glow lamps are widely used as indicator lamps in the displays of electronic instruments and appliances.
DIACs have no gate electrode, unlike some other thyristors that they are commonly used to trigger, such as TRIACs. Some TRIACs, like Quadrac, contain a built-in DIAC in series with the TRIAC's gate terminal for this purpose.
An electrode is an electrical conductor used to make contact with a nonmetallic part of a circuit. The word was coined by William Whewell at the request of the scientist Michael Faraday from two Greek words: elektron, meaning amber, and hodos, a way.
A thyristor is a solid-state semiconductor device with four layers of alternating P- and N-type materials. It acts exclusively as a bistable switch, conducting when the gate receives a current trigger, and continuing to conduct until the voltage across the device is reversed biased, or until the voltage is removed. A three-lead thyristor is designed to control the larger current of the Anode to Cathode path by controlling that current with the smaller current of its other lead, known as its Gate. In contrast, a two-lead thyristor is designed to switch on if the potential difference between its leads is sufficiently large.
TRIAC, from triode for alternating current, is a generic trademark for a three terminal electronic component that conducts current in either direction when triggered. Its formal name is bidirectional triode thyristor or bilateral triode thyristor. A thyristor is analogous to a relay in that a small voltage induced current can control a much larger voltage and current. The illustration on the right shows the circuit symbol for a TRIAC where A1 is Anode 1, A2 is Anode 2, and G is Gate. Anode 1 and Anode 2 are normally termed Main Terminal 1 (MT1) and Main Terminal 2 (MT2) respectively.
DIACs are also called "symmetrical trigger diodes" due to the symmetry of their characteristic curve. Because DIACs are bidirectional devices, their terminals are not labeled as anode and cathode but as A1 and A2 or main terminal MT1 and MT2.
A Silicon Diode for Alternating Current (SIDAC) is a less commonly used device, electrically similar to the DIAC, but having, in general, a higher breakover voltage and greater current handling capacity.
The SIDAC is another member of the thyristor family. Also referred to as a SYDAC (Silicon thYristor for Alternating Current), bi-directional thyristor breakover diode, or more simply a bi-directional thyristor diode, it is technically specified as a bilateral voltage triggered switch. Its operation is similar to that of the DIAC, but SIDAC is always a five-layer device with low-voltage drop in latched conducting state, more like a voltage triggered TRIAC without a gate. In general, SIDACs have higher breakover voltages and current handling capacities than DIACs, so they can be directly used for switching and not just for triggering of another switching device.
The operation of the SIDAC is functionally similar to that of a spark gap, but is unable to reach its higher temperature ratings. The SIDAC remains nonconducting until the applied voltage meets or exceeds its rated breakover voltage. Once entering this conductive state going through the negative dynamic resistance region, the SIDAC continues to conduct, regardless of voltage, until the applied current falls below its rated holding current. At this point, the SIDAC returns to its initial nonconductive state to begin the cycle once again.
A spark gap consists of an arrangement of two conducting electrodes separated by a gap usually filled with a gas such as air, designed to allow an electric spark to pass between the conductors. When the potential difference between the conductors exceeds the breakdown voltage of the gas within the gap, a spark forms, ionizing the gas and drastically reducing its electrical resistance. An electric current then flows until the path of ionized gas is broken or the current reduces below a minimum value called the "holding current". This usually happens when the voltage drops, but in some cases occurs when the heated gas rises, stretching out and then breaking the filament of ionized gas. Usually, the action of ionizing the gas is violent and disruptive, often leading to sound, light and heat.
Somewhat uncommon in most electronics, the SIDAC is relegated to the status of a special purpose device. However, where part-counts are to be kept low, simple relaxation oscillators are needed, and when the voltages are too low for practical operation of a spark gap, the SIDAC is an indispensable component.
Similar devices, though usually not functionally interchangeable with SIDACs, are the Thyristor Surge Protection Devices (TSPD) sold under trademarks like Trisil by STMicroelectronics and SIDACtor® and its predecessor Surgector by Littelfuse. These are designed to tolerate large surge currents for the suppression of overvoltage transients. In many applications this function is now served by metal oxide varistors (MOVs), particularly for trapping voltage transients on the power mains.
A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction that acts exclusively as an electrically controlled switch.
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action. Although the structure of the IGBT is topologically the same as a thyristor with a 'MOS' gate, the thyristor action is completely suppressed and only the transistor action is permitted in the entire device operation range. It switches electric power in many applications: variable-frequency drives (VFDs), electric cars, trains, variable speed refrigerators, lamp ballasts, air-conditioners and even stereo systems with switching amplifiers.
A varistor is an electronic component with an electrical resistance that varies with the applied voltage. Also known as a voltage-dependent resistor (VDR), it has a nonlinear, non-ohmic current–voltage characteristic that is similar to that of a diode. In contrast to a diode however, it has the same characteristic for both directions of traversing current. Traditionally, varistors were indeed constructed by connecting two rectifiers, such as the copper-oxide or germanium-oxide rectifier in anti-parallel configuration. At low voltage the varistor has a high electrical resistance which decreases as the voltage is raised. Modern varistors are primarily based on sintered ceramic metal-oxide materials which exhibit directional behavior only on a microscopic scale. This type is commonly known as the metal-oxide varistor (MOV).
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell Laboratories in January 1958. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The SCR was developed by a team of power engineers led by Gordon Hall and commercialized by Frank W. "Bill" Gutzwiller in 1957.
A surge protector is an appliance or device designed to protect electrical devices from voltage spikes.
The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor.
A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics. Such a device is also called a power device or, when used in an integrated circuit, a power IC.
A snubber is a device used to suppress ("snub") a phenomenon such as voltage transients in electrical systems, pressure transients in fluid systems or excess force or rapid movement in mechanical systems.
An electronic component is any basic discrete device or physical entity in an electronic system used to affect electrons or their associated fields. Electronic components are mostly industrial products, available in a singular form and are not to be confused with electrical elements, which are conceptual abstractions representing idealized electronic components.
A crowbar circuit is an electrical circuit used for preventing an overvoltage condition of a power supply unit from damaging the circuits attached to the power supply. It operates by putting a short circuit or low resistance path across the voltage output (Vo), quite like were one to drop a crowbar across the output terminals of the power supply. Crowbar circuits are frequently implemented using a thyristor, TRIAC, trisil or thyratron as the shorting device. Once triggered, they depend on the current-limiting circuitry of the power supply or, if that fails, the blowing of the line fuse or tripping the circuit breaker.
Trisil is a trade name for a thyristor surge protection device, an electronic component designed to protect electronic circuits against overvoltage. Unlike a transient voltage suppression diodes, such as Transil, a Trisil acts as a crowbar device, switching ON when the voltage on it exceeds its breakover voltage.
A current–voltage characteristic or I–V curve is a relationship, typically represented as a chart or graph, between the electric current through a circuit, device, or material, and the corresponding voltage, or potential difference across it.
A semiconductor curve tracer is a specialised piece of electronic test equipment used to analyze the characteristics of discrete semiconductor devices such as diodes, transistors, and thyristors. Based on an oscilloscope, the device also contains voltage and current sources that can be used to stimulate the device under test (DUT).
A solid-state relay (SSR) is an electronic switching device that switches on or off when a small external voltage is applied across its control terminals. SSRs consist of a sensor which responds to an appropriate input, a solid-state electronic switching device which switches power to the load circuitry, and a coupling mechanism to enable the control signal to activate this switch without mechanical parts. The relay may be designed to switch either AC or DC to the load. It serves the same function as an electromechanical relay, but has no moving parts.
A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power semiconductor device. It was invented at General Electric. GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their third lead, the gate lead.
Quadracs are a special type of thyristor which combines a "diac" and a "triac" in a single package. The diac is the triggering device for the triac. Thyristors are four-layer (PNPN) semiconductor devices that act as switches, rectifiers or voltage regulators in a variety of applications. When triggered, thyristors turn on and become low-resistance current paths. They remain so even after the trigger is removed, and until the current is reduced to a certain level. Diacs are bi-directional diodes that switch AC voltages and trigger triacs or silicon-controlled rectifiers (SCRs). Except for a small leakage current, diacs do not conduct until the breakover voltage is reached. Triacs are three-terminal, silicon devices that function as two SCRs configured in an inverse, parallel arrangement. They provide load current during both halves of the AC supply voltage. By combining the functions of diacs and triacs, quadracs eliminate the need to buy and assemble discrete parts.
A Triggering device is an electronic circuit, such as a Schmitt trigger, which is used to control another electronic circuit.
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