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Type | Passive |
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Pin configuration | anode 1, anode 2 |
Electronic symbol | |
The DIAC (diode for alternating current) is a diode that conducts electrical current only after its breakover voltage, VBO, has been reached momentarily. Three, four, and five layer structures may be used. [1] Behavior is similar to the voltage breakdown of a triac without a gate terminal.
When breakdown occurs, internal positive feedback (impact ionization or two transistor feedback) ensures that the diode enters a region of negative dynamic resistance, leading to a sharp increase in current through the diode and a decrease in the voltage drop across it (typically full switch-on takes a few hundred nanoseconds to microseconds). The diode remains in conduction until the current through it drops below a value characteristic for the device, called the holding current, IH. Below this threshold, the diode switches back to its high-resistance, non-conducting state. This behavior is bi-directional, meaning typically the same for both directions of current.
Most DIACs have a three-layer structure with breakover voltage of approximately 30 V and an on voltage of less than 3 V. Their behavior is analogous to the striking and extinction voltages of a neon lamp, but it can be more repeatable and takes place at lower voltages.
DIACs have no gate or trigger electrode, unlike some other thyristors that they are commonly used to trigger, such as TRIACs. Some TRIACs, like Quadrac, contain a built-in DIAC in series with the TRIAC's gate terminal for this purpose.
DIACs are also called "symmetrical trigger diodes" due to the symmetry of their characteristic curve. Because DIACs are bidirectional devices, their terminals are not labeled as anode and cathode but as A1 and A2 or main terminal MT1 and MT2.
A silicon diode for alternating current (SIDAC) is a less commonly used device, electrically similar to the DIAC, but having, in general, a higher breakover voltage and greater current handling capacity.[ citation needed ]
The SIDAC is another member of the thyristor family. Also referred to as a SYDAC (silicon thyristor for alternating current), bi-directional thyristor breakover diode, or more simply a bi-directional thyristor diode, it is technically specified as a bilateral voltage triggered switch. Its operation is similar to that of the DIAC, but a SIDAC is always a five-layer device with low-voltage drop in latched conducting state, more like a voltage triggered TRIAC without a gate. In general, SIDACs have higher breakover voltages and current handling capacities than DIACs, so they can be directly used for switching and not just for triggering of another switching device.
The operation of the SIDAC is functionally similar to that of a spark gap, but is unable to reach its higher temperature ratings. The SIDAC remains nonconducting until the applied voltage meets or exceeds its rated breakover voltage. Once entering this conductive state going through the negative dynamic resistance region, the SIDAC continues to conduct, regardless of voltage, until the applied current falls below its rated holding current. At this point, the SIDAC returns to its initial nonconductive state to begin the cycle once again.
Somewhat uncommon in most electronics, the SIDAC is relegated to the status of a special purpose device. However, where part-counts are to be kept low, simple relaxation oscillators are needed, and when the voltages are too low for practical operation of a spark gap, the SIDAC is an indispensable component.
Similar devices, though usually not functionally interchangeable with SIDACs, are the thyristor surge protection device (TSPD) sold under trademarks like Trisil by STMicroelectronics and SIDACtor and its predecessor Surgector by Littelfuse. These are designed to tolerate large surge currents for the suppression of overvoltage transients. In many applications this function is now served by metal oxide varistors (MOVs), particularly for trapping voltage transients on the power mains.
DIACs and SIDACs are often used to deliver a pulse once a capacitor has charged to the breakdown voltage, giving both controlled delay set by the charging resistor and a fixed pulse energy set by the capacitor and breakdown voltage. This is common in simple phase angle controls for AC lamp dimmers and motor speed controls. They may also be used to sense over-voltage fault conditions to provide a 'crowbar' function to operate a fuse or a latching alarm that can only be reset by removing the supply.
A diode is a two-terminal electronic component that conducts current primarily in one direction. It has low resistance in one direction and high resistance in the other.
A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction. It acts exclusively as an electrically controlled switch.
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
A thyristor is a solid-state semiconductor device which can be thought of as being a highly robust and switchable diode, allowing the passage of current in one direction but not the other, often under control of a gate electrode, that is used in high power applications like inverters and radar generators. It usually consists of four layers of alternating P- and N-type materials. It acts as a bistable switch. There are two designs, differing in what triggers the conducting state. In a three-lead thyristor, a small current on its gate lead controls the larger current of the anode-to-cathode path. In a two-lead thyristor, conduction begins when the potential difference between the anode and cathode themselves is sufficiently large. The thyristor continues conducting until the voltage across the device is reverse-biased or the voltage is removed, or through the control gate signal on newer types.
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell Laboratories in January 1958. The SCR was developed by a team of power engineers led by Gordon Hall and commercialized by Frank W. "Bill" Gutzwiller in 1957.
A TRIAC is a three-terminal electronic component that conducts current in either direction when triggered. The term TRIAC is a genericised trademark.
A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics. Such a device is also called a power device or, when used in an integrated circuit, a power IC.
A snubber is a device used to suppress a phenomenon such as voltage transients in electrical systems, pressure transients in fluid systems or excess force or rapid movement in mechanical systems.
An electronic component is any basic discrete electronic device or physical entity part of an electronic system used to affect electrons or their associated fields. Electronic components are mostly industrial products, available in a singular form and are not to be confused with electrical elements, which are conceptual abstractions representing idealized electronic components and elements. A datasheet for an electronic component is a technical document that provides detailed information about the component's specifications, characteristics, and performance. Discrete circuits are made of individual electronic components that only perform one function each as packaged, which are known as discrete components, although strictly the term discrete component refers to such a component with semiconductor material such as individual transistors.
A crowbar circuit is an electrical circuit used for preventing an overvoltage or surge condition of a power supply unit from damaging the circuits attached to the power supply. It operates by putting a short circuit or low resistance path across the voltage output (Vo), like dropping a crowbar across the output terminals of the power supply. Crowbar circuits are frequently implemented using a thyristor, TRIAC, trisil or thyratron as the shorting device. Once triggered, they depend on the current-limiting circuitry of the power supply or, if that fails, the blowing of the line fuse or tripping the circuit breaker.
Trisil is a trade name for a thyristor surge protection device, an electronic component designed to protect electronic circuits against overvoltage. Unlike a transient voltage suppression diodes, such as Transil, a Trisil acts as a crowbar device, switching ON when the voltage on it exceeds its breakover voltage.
A current–voltage characteristic or I–V curve is a relationship, typically represented as a chart or graph, between the electric current through a circuit, device, or material, and the corresponding voltage, or potential difference, across it.
A curve tracer is a specialised piece of electronic test equipment used to analyze the characteristics of discrete electronic components, such as diodes, transistors, thyristors, and vacuum tubes. The device contains voltage and current sources that can be used to stimulate the device under test (DUT).
A solid state relay (SSR) is an electronic switching device that switches on or off when an external voltage is applied across its control terminals. They serve the same function as an electromechanical relay, but solid-state electronics contain no moving parts and have a longer operational lifetime. Solid state relays were invented in 1971 by the Crydom Controls division of International Rectifiers.
A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power semiconductor device. It was invented by General Electric. GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.
The Shockley diode is a four-layer semiconductor diode, which was one of the first semiconductor devices invented. It is a PNPN diode with alternating layers of P-type and N-type material. It is equivalent to a thyristor with a disconnected gate. Shockley diodes were manufactured and marketed by Shockley Semiconductor Laboratory in the late 1950s. The Shockley diode has a negative resistance characteristic. It was largely superseded by the diac.
A QUADRAC is a special type of thyristor which combines a DIAC and a TRIAC in a single package. The DIAC is the triggering device for the TRIAC. Thyristors are four-layer (PNPN) semiconductor devices that act as switches, rectifiers or voltage regulators in a variety of applications. When triggered, thyristors turn on and become low-resistance current paths. They remain so even after the trigger is removed, and until the current is reduced to a certain level. Diacs are bi-directional diodes that switch AC voltages and trigger triacs or silicon-controlled rectifiers (SCRs). Except for a small leakage current, diacs do not conduct until the breakover voltage is reached. Triacs are three-terminal, silicon devices that function as two SCRs configured in an inverse, parallel arrangement. They provide load current during both halves of the AC supply voltage. By combining the functions of diacs and triacs, QUADRACs eliminate the need to buy and assemble discrete parts.
A Triggering device is an electronic circuit, such as a Schmitt trigger, which is used to control another electronic circuit.
An HVDC converter converts electric power from high voltage alternating current (AC) to high-voltage direct current (HVDC), or vice versa. HVDC is used as an alternative to AC for transmitting electrical energy over long distances or between AC power systems of different frequencies. HVDC converters capable of converting up to two gigawatts (GW) and with voltage ratings of up to 900 kilovolts (kV) have been built, and even higher ratings are technically feasible. A complete converter station may contain several such converters in series and/or parallel to achieve total system DC voltage ratings of up to 1,100 kV.
This glossary of power electronics is a list of definitions of terms and concepts related to power electronics in general and power electronic capacitors in particular. For more definitions in electric engineering, see Glossary of electrical and electronics engineering. For terms related to engineering in general, see Glossary of engineering.