A diode is a two-terminal electronic component that conducts current primarily in one direction. It has low resistance in one direction and high resistance in the other.
An electronic oscillator is an electronic circuit that produces a periodic, oscillating or alternating current (AC) signal, usually a sine wave, square wave or a triangle wave, powered by a direct current (DC) source. Oscillators are found in many electronic devices, such as radio receivers, television sets, radio and television broadcast transmitters, computers, computer peripherals, cellphones, radar, and many other devices.
Microwave is a form of electromagnetic radiation with wavelengths shorter than other radio waves but longer than infrared waves. Its wavelength ranges from about one meter to one millimeter, corresponding to frequencies between 300 MHz and 300 GHz, broadly construed. A more common definition in radio-frequency engineering is the range between 1 and 100 GHz, or between 1 and 3000 GHz . The prefix micro- in microwave is not meant to suggest a wavelength in the micrometer range; rather, it indicates that microwaves are small, compared to the radio waves used in prior radio technology.
The cavity magnetron is a high-power vacuum tube used in early radar systems and subsequently in microwave ovens and in linear particle accelerators. A cavity magnetron generates microwaves using the interaction of a stream of electrons with a magnetic field, while moving past a series of cavity resonators, which are small, open cavities in a metal block. Electrons pass by the cavities and cause microwaves to oscillate within, similar to the functioning of a whistle producing a tone when excited by an air stream blown past its opening. The resonant frequency of the arrangement is determined by the cavities' physical dimensions. Unlike other vacuum tubes, such as a klystron or a traveling-wave tube (TWT), the magnetron cannot function as an amplifier for increasing the intensity of an applied microwave signal; the magnetron serves solely as an electronic oscillator generating a microwave signal from direct current electricity supplied to the vacuum tube.
A semiconductor is a material that has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity generally falls as its temperature rises; metals behave in the opposite way. In many cases their conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits.
A laser diode is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction.
In electronics, a varicap diode, varactor diode, variable capacitance diode, variable reactance diode or tuning diode is a type of diode designed to exploit the voltage-dependent capacitance of a reverse-biased p–n junction.
A klystron is a specialized linear-beam vacuum tube, invented in 1937 by American electrical engineers Russell and Sigurd Varian, which is used as an amplifier for high radio frequencies, from UHF up into the microwave range. Low-power klystrons are used as oscillators in terrestrial microwave relay communications links, while high-power klystrons are used as output tubes in UHF television transmitters, satellite communication, radar transmitters, and to generate the drive power for modern particle accelerators.
In electronics, negative resistance (NR) is a property of some electrical circuits and devices in which an increase in voltage across the device's terminals results in a decrease in electric current through it.
In electronics, the dynatron oscillator, invented in 1918 by Albert Hull at General Electric, is an obsolete vacuum tube electronic oscillator circuit which uses a negative resistance characteristic in early tetrode vacuum tubes, caused by a process called secondary emission. It was the first negative resistance vacuum tube oscillator. The dynatron oscillator circuit was used to a limited extent as beat frequency oscillators (BFOs), and local oscillators in vacuum tube radio receivers as well as in scientific and test equipment from the 1920s to the 1940s but became obsolete around World War 2 due to the variability of secondary emission in tubes.
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony. In 1973, Esaki received the Nobel Prize in Physics for experimental demonstration of the electron tunneling effect in semiconductors. Robert Noyce independently devised the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it. Tunnel diodes were first manufactured by Sony in 1957, followed by General Electric and other companies from about 1960, and are still made in low volume today.
A MESFET is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a p–n junction for a gate.
A high-electron-mobility transistor, also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps as the channel instead of a doped region. A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device. Devices incorporating more indium generally show better high-frequency performance, while in recent years, gallium nitride HEMTs have attracted attention due to their high-power performance.
An IMPATT diode is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. They operate at frequencies of about 3 and 100 GHz, or higher. The main advantage is their high-power capability; single IMPATT diodes can produce continuous microwave outputs of up to 3 kilowatts, and pulsed outputs of much higher power. These diodes are used in a variety of applications from low-power radar systems to proximity alarms. A major drawback of IMPATT diodes is the high level of phase noise they generate. This results from the statistical nature of the avalanche process.
An electronic component is any basic discrete electronic device or physical entity part of an electronic system used to affect electrons or their associated fields. Electronic components are mostly industrial products, available in a singular form and are not to be confused with electrical elements, which are conceptual abstractions representing idealized electronic components and elements. A datasheet for an electronic component is a technical document that provides detailed information about the component's specifications, characteristics, and performance. Discrete circuits are made of individual electronic components that only perform one function each as packaged, which are known as discrete components, although strictly the term discrete component refers to such a component with semiconductor material such as individual transistors.
A backward wave oscillator (BWO), also called carcinotron or backward wave tube, is a vacuum tube that is used to generate microwaves up to the terahertz range. Belonging to the traveling-wave tube family, it is an oscillator with a wide electronic tuning range.
A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions.
In electronics, a step recovery diode is a semiconductor junction diode with the ability to generate extremely short pulses. It has a variety of uses in microwave electronics as pulse generator or parametric amplifier.
A vircator is a microwave generator that is capable of generating brief pulses of tunable, narrow band microwaves at very high power levels. Its application is mainly in the area of electronic warfare, by way of interfering with electronic equipment such as radars or radio equipment.
In solid state physics the Ridley–Watkins–Hilsum theory (RWH) explains the mechanism by which differential negative resistance is developed in a bulk solid state semiconductor material when a voltage is applied to the terminals of the sample. It is the theory behind the operation of the Gunn diode as well as several other microwave semiconductor devices, which are used practically in electronic oscillators to produce microwave power. It is named for British physicists Brian Ridley, Tom Watkins and Cyril Hilsum who wrote theoretical papers on the effect in 1961.
