A charge-coupled device (CCD) is an integrated circuit containing an array of linked, or coupled, capacitors. Under the control of an external circuit, each capacitor can transfer its electric charge to a neighboring capacitor. CCD sensors are a major technology used in digital imaging.
A diode is a two-terminal electronic component that conducts current primarily in one direction. It has low resistance in one direction and high resistance in the other.
A PIN diode is a diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region. The p-type and n-type regions are typically heavily doped because they are used for ohmic contacts.
A photodiode is a semiconductor diode sensitive to photon radiation, such as visible light, infrared or ultraviolet radiation, X-rays and gamma rays. It produces an electrical current when it absorbs photons. This can be used for detection and measurement applications, or for the generation of electrical power in solar cells. Photodiodes are used in a wide range of applications throughout the electromagnetic spectrum from visible light photocells to gamma ray spectrometers.
Photoconductivity is an optical and electrical phenomenon in which a material becomes more electrically conductive due to the absorption of electromagnetic radiation such as visible light, ultraviolet light, infrared light, or gamma radiation.
A photoresistor is a passive component that decreases in resistance as a result of increasing luminosity (light) on its sensitive surface, in other words, it exhibits photoconductivity. A photoresistor can be used in light-sensitive detector circuits and light-activated and dark-activated switching circuits acting as a semiconductor resistance. In the dark, a photoresistor can have a resistance as high as several megaohms (MΩ), while in the light, it can have a resistance as low as a few hundred ohms. If incident light on a photoresistor exceeds a certain frequency, photons absorbed by the semiconductor give bound electrons enough energy to jump into the conduction band. The resulting free electrons conduct electricity, thereby lowering resistance. The resistance range and sensitivity of a photoresistor can substantially differ among dissimilar devices. Moreover, unique photoresistors may react substantially differently to photons within certain wavelength bands.
A scintillation counter is an instrument for detecting and measuring ionizing radiation by using the excitation effect of incident radiation on a scintillating material, and detecting the resultant light pulses.
An avalanche photodiode (APD) is a highly sensitive type of photodiode, which in general are semiconductor diodes that convert light into electricity via interband excitation coupled with impact ionization. APDs use materials and a structure optimised for operating with high reverse bias, approaching the reverse breakdown voltage, such that charge carriers generated by the photoelectric effect are multiplied by an avalanche breakdown; thus they can be used to detect relatively small amounts of light.
An opto-isolator is an electronic component that transfers electrical signals between two isolated circuits by using light. Opto-isolators prevent high voltages from affecting the system receiving the signal. Commercially available opto-isolators withstand input-to-output voltages up to 10 kV and voltage transients with speeds up to 25 kV/μs.
A single-photon avalanche diode (SPAD), also called Geiger-mode avalanche photodiode is a solid-state photodetector within the same family as photodiodes and avalanche photodiodes (APDs), while also being fundamentally linked with basic diode behaviours. As with photodiodes and APDs, a SPAD is based around a semi-conductor p-n junction that can be illuminated with ionizing radiation such as gamma, x-rays, beta and alpha particles along with a wide portion of the electromagnetic spectrum from ultraviolet (UV) through the visible wavelengths and into the infrared (IR).
The term quantum efficiency (QE) may apply to incident photon to converted electron (IPCE) ratio of a photosensitive device, or it may refer to the TMR effect of a magnetic tunnel junction.
A phototube or photoelectric cell is a type of gas-filled or vacuum tube that is sensitive to light. Such a tube is more correctly called a 'photoemissive cell' to distinguish it from photovoltaic or photoconductive cells. Phototubes were previously more widely used but are now replaced in many applications by solid state photodetectors. The photomultiplier tube is one of the most sensitive light detectors, and is still widely used in physics research.
Indium gallium arsenide (InGaAs) is a ternary alloy of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.
An infrared detector is a detector that reacts to infrared (IR) radiation. The two main types of detectors are thermal and photonic (photodetectors).
An image sensor or imager is a sensor that detects and conveys information used to form an image. It does so by converting the variable attenuation of light waves into signals, small bursts of current that convey the information. The waves can be light or other electromagnetic radiation. Image sensors are used in electronic imaging devices of both analog and digital types, which include digital cameras, camera modules, camera phones, optical mouse devices, medical imaging equipment, night vision equipment such as thermal imaging devices, radar, sonar, and others. As technology changes, electronic and digital imaging tends to replace chemical and analog imaging.
An active-pixel sensor (APS) is an image sensor, which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the now much more common complementary MOS (CMOS) APS, also known as the CMOS sensor. CMOS sensors are used in digital camera technologies such as cell phone cameras, web cameras, most modern digital pocket cameras, most digital single-lens reflex cameras (DSLRs), mirrorless interchangeable-lens cameras (MILCs), and lensless imaging for cells.
A back-illuminated sensor, also known as backside illumination (BI) sensor, is a type of digital image sensor that uses a novel arrangement of the imaging elements to increase the amount of light captured and thereby improve low-light performance.
James Robert Biard was an American electrical engineer and inventor who held 73 U.S. patents. Some of his more significant patents include the first infrared light-emitting diode (LED), the optical isolator, Schottky clamped logic circuits, silicon Metal Oxide Semiconductor Read Only Memory, a low bulk leakage current avalanche photodetector, and fiber-optic data links. In 1980, Biard became a member of the staff of Texas A&M University as an adjunct professor of electrical engineering. In 1991, he was elected as a member into the National Academy of Engineering for contributions to semiconductor light-emitting diodes and lasers, Schottky-clamped logic, and read-only memories.
A solaristor is a compact two-terminal self-powered phototransistor. The two-in-one transistor plus solar cell achieves the high-low current modulation by a memresistive effect in the flow of photogenerated carriers. The term was coined by Dr Amador Perez-Tomas working in collaboration with other ICN2 researchers in 2018 when they demonstrated the concept in a ferroelectric-oxide/organic bulk heterojunction solar cell.
