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Type | Passive |
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Working principle | Photoconductivity |
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![]() The symbol for a photoresistor |
A photoresistor (also known as a light-dependent resistor, LDR, or photo-conductive cell) is a passive component that decreases in resistance as a result of increasing luminosity (light) on its sensitive surface, in other words, it exhibits photoconductivity. A photoresistor can be used in light-sensitive detector circuits and light-activated and dark-activated switching circuits acting as a semiconductor resistance. In the dark, a photoresistor can have a resistance as high as several megaohms (MΩ), while in the light, it can have a resistance as low as a few hundred ohms. If incident light on a photoresistor exceeds a certain frequency, photons absorbed by the semiconductor give bound electrons enough energy to jump into the conduction band. The resulting free electrons (and their hole partners) conduct electricity, thereby lowering resistance. The resistance range and sensitivity of a photoresistor can substantially differ among dissimilar devices. Moreover, unique photoresistors may react substantially differently to photons within certain wavelength bands.
A photoelectric device can be either intrinsic or extrinsic. An intrinsic semiconductor has its own charge carriers and is not an efficient semiconductor (such as silicon is). In intrinsic devices, most of the available electrons are in the valence band, and hence the photon must have enough energy to excite the electron across the entire bandgap. Extrinsic devices have impurities, also called dopants, added whose ground state energy is closer to the conduction band; since the electrons do not have as far to jump, lower energy photons (that is, longer wavelengths and lower frequencies) are sufficient to trigger the device. If a sample of silicon has some of its atoms replaced by phosphorus atoms (impurities), there will be extra electrons available for conduction. This is an example of an extrinsic semiconductor. [1]
A photoresistor is less light-sensitive than a photodiode or a phototransistor. The latter two components are true semiconductor devices, while a photoresistor is a passive component that does not have a PN-junction. The photoresistivity of any photoresistor may vary widely depending on ambient temperature, making them unsuitable for applications requiring precise measurement of or sensitivity to light photons.
Photoresistors also exhibit a certain degree of latency between exposure to light and the subsequent decrease in resistance, usually around 10 milliseconds. The lag time when going from lit to dark environments is even greater, often as long as one second. This property makes them unsuitable for sensing rapidly flashing lights, but is sometimes used to smooth the response of audio signal compression. [2]
Photoresistors come in many types. Inexpensive cadmium sulfide (CdS) cells can be found in many consumer items such as camera light meters, clock radios, alarm devices (as the detector for a light beam), nightlights, outdoor clocks, solar street lamps, and solar road studs, etc.
Photoresistors can be placed in streetlights to control when the light is on. Ambient light falling on the photoresistor causes the streetlight to turn off. Thus energy is saved by ensuring the light is only on during hours of darkness.
Photoresistors or LDRs are also used in laser-based security systems to detect the change in the light intensity when a person/object passes through the laser beam.
They are also used in some dynamic compressors together with a small incandescent or neon lamp, or light-emitting diode to control gain reduction. A common usage of this application can be found in many guitar amplifiers that incorporate an onboard tremolo effect, as the oscillating light patterns control the level of signal running through the amplifier circuit.
The use of CdS and CdSe [3] photoresistors is severely restricted in Europe due to the RoHS ban on cadmium.
Lead sulfide (PbS) and indium antimonide (InSb) LDRs (light-dependent resistors) are used for the mid-infrared spectral region. Ge:Cu photoconductors are among the best far-infrared detectors available, and are used for infrared astronomy and infrared spectroscopy.
A diode is a two-terminal electronic component that conducts current primarily in one direction. It has low resistance in one direction and high resistance in the other.
A semiconductor is a material that has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity generally falls as its temperature rises; metals behave in the opposite way. In many cases their conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits.
A photodiode is a semiconductor diode sensitive to photon radiation, such as visible light, infrared or ultraviolet radiation, X-rays and gamma rays. It produces an electrical current when it absorbs photons. This can be used for detection and measurement applications, or for the generation of electrical power in solar cells. Photodiodes are used in a wide range of applications throughout the electromagnetic spectrum from visible light photocells to gamma ray spectrometers.
Photoconductivity is an optical and electrical phenomenon in which a material becomes more electrically conductive due to the absorption of electromagnetic radiation such as visible light, ultraviolet light, infrared light, or gamma radiation.
A bolometer is a device for measuring radiant heat by means of a material having a temperature-dependent electrical resistance. It was invented in 1878 by the American astronomer Samuel Pierpont Langley.
In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there is no generated current due to no net charge carrier mobility. However, if some electrons transfer from the valence band to the conduction band, then current can flow. Therefore, the band gap is a major factor determining the electrical conductivity of a solid. Substances having large band gaps are generally insulators, those with small band gaps are semiconductor, and conductors either have very small band gaps or none, because the valence and conduction bands overlap to form a continuous band.
A scintillator is a material that exhibits scintillation, the property of luminescence, when excited by ionizing radiation. Luminescent materials, when struck by an incoming particle, absorb its energy and scintillate. Sometimes, the excited state is metastable, so the relaxation back down from the excited state to lower states is delayed. The process then corresponds to one of two phenomena: delayed fluorescence or phosphorescence. The correspondence depends on the type of transition and hence the wavelength of the emitted optical photon.
An opto-isolator is an electronic component that transfers electrical signals between two isolated circuits by using light. Opto-isolators prevent high voltages from affecting the system receiving the signal. Commercially available opto-isolators withstand input-to-output voltages up to 10 kV and voltage transients with speeds up to 25 kV/μs.
A semiconductor detector in ionizing radiation detection physics is a device that uses a semiconductor to measure the effect of incident charged particles or photons.
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor.
Cadmium sulfide is the inorganic compound with the formula CdS. Cadmium sulfide is a yellow salt. It occurs in nature with two different crystal structures as the rare minerals greenockite and hawleyite, but is more prevalent as an impurity substituent in the similarly structured zinc ores sphalerite and wurtzite, which are the major economic sources of cadmium. As a compound that is easy to isolate and purify, it is the principal source of cadmium for all commercial applications. Its vivid yellow color led to its adoption as a pigment for the yellow paint "cadmium yellow" in the 18th century.
Photodetectors, also called photosensors, are sensors of light or other electromagnetic radiation. There are a wide variety of photodetectors which may be classified by mechanism of detection, such as photoelectric or photochemical effects, or by various performance metrics, such as spectral response. Semiconductor-based photodetectors typically use a p–n junction that converts photons into charge. The absorbed photons make electron–hole pairs in the depletion region. Photodiodes and photo transistors are a few examples of photo detectors. Solar cells convert some of the light energy absorbed into electrical energy.
Gamma-ray spectroscopy is the qualitative study of the energy spectra of gamma-ray sources, such as in the nuclear industry, geochemical investigation, and astrophysics. Gamma-ray spectrometry, on the other hand, is the method used to acquire a quantitative spectrum measurement.
An electronic component is any basic discrete electronic device or physical entity part of an electronic system used to affect electrons or their associated fields. Electronic components are mostly industrial products, available in a singular form and are not to be confused with electrical elements, which are conceptual abstractions representing idealized electronic components and elements. A datasheet for an electronic component is a technical document that provides detailed information about the component's specifications, characteristics, and performance.
Hg1−xCdxTe or mercury cadmium telluride is a chemical compound of cadmium telluride (CdTe) and mercury telluride (HgTe) with a tunable bandgap spanning the shortwave infrared to the very long wave infrared regions. The amount of cadmium (Cd) in the alloy can be chosen so as to tune the optical absorption of the material to the desired infrared wavelength. CdTe is a semiconductor with a bandgap of approximately 1.5 electronvolts (eV) at room temperature. HgTe is a semimetal, which means that its bandgap energy is zero. Mixing these two substances allows one to obtain any bandgap between 0 and 1.5 eV.
An intrinsic semiconductor, also called a pure semiconductor, undoped semiconductor or i-type semiconductor, is a semiconductor without any significant dopant species present. The number of charge carriers is therefore determined by the properties of the material itself instead of the amount of impurities. In intrinsic semiconductors the number of excited electrons and the number of holes are equal: n = p. This may be the case even after doping the semiconductor, though only if it is doped with both donors and acceptors equally. In this case, n = p still holds, and the semiconductor remains intrinsic, though doped. This means that some conductors are both intrinsic as well as extrinsic but only if n is equal to p.
An infrared detector is a detector that reacts to infrared (IR) radiation. The two main types of detectors are thermal and photonic (photodetectors).
An extrinsic semiconductor is one that has been doped; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an intrinsic semiconductor. In an extrinsic semiconductor it is these foreign dopant atoms in the crystal lattice that mainly provide the charge carriers which carry electric current through the crystal. The doping agents used are of two types, resulting in two types of extrinsic semiconductor. An electron donor dopant is an atom which, when incorporated in the crystal, releases a mobile conduction electron into the crystal lattice. An extrinsic semiconductor that has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An electron acceptor dopant is an atom which accepts an electron from the lattice, creating a vacancy where an electron should be called a hole which can move through the crystal like a positively charged particle. An extrinsic semiconductor which has been doped with electron acceptor atoms is called a p-type semiconductor, because the majority of charge carriers in the crystal are positive holes.
A transition-edge sensor (TES) is a type of cryogenic energy sensor or cryogenic particle detector that exploits the strongly temperature-dependent resistance of the superconducting phase transition.
Resistive opto-isolator (RO), also called photoresistive opto-isolator, vactrol, analog opto-isolator or lamp-coupled photocell, is an optoelectronic device consisting of a source and detector of light, which are optically coupled and electrically isolated from each other. The light source is usually a light-emitting diode (LED), a miniature incandescent lamp, or sometimes a neon lamp, whereas the detector is a semiconductor-based photoresistor made of cadmium selenide (CdSe) or cadmium sulfide (CdS). The source and detector are coupled through a transparent glue or through the air.