Mixed-signal integrated circuit

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Mixed signal integrated circuit: the metal areas on the right-hand side are capacitors, on top of which are large output transistors; the left-hand side is occupied by the digital logic Mixed signal IC.jpg
Mixed signal integrated circuit: the metal areas on the right-hand side are capacitors, on top of which are large output transistors; the left-hand side is occupied by the digital logic

A mixed-signal integrated circuit is any integrated circuit that has both analog circuits and digital circuits on a single semiconductor die. [1] [2] [3] [4] Their usage has grown dramatically with the increased use of cell phones, telecommunications, portable electronics, and automobiles with electronics and digital sensors.

Contents

Overview

Integrated circuits (ICs) are generally classified as digital (e.g. a microprocessor) or analog (e.g. an operational amplifier). Mixed-signal ICs contain both digital and analog circuitry on the same chip, and sometimes embedded software. Mixed-signal ICs process both analog and digital signals together. For example, an analog-to-digital converter (ADC) is a typical mixed-signal circuit.

Mixed-signal ICs are often used to convert analog signals to digital signals so that digital devices can process them. For example, mixed-signal ICs are essential components for FM tuners in digital products such as media players, which have digital amplifiers. Any analog signal can be digitized using a very basic ADC, and the smallest and most energy efficient of these are mixed-signal ICs.

Mixed-signal ICs are more difficult to design and manufacture than analog-only or digital-only integrated circuits. For example, an efficient mixed-signal IC may have its digital and analog components share a common power supply. However, analog and digital components have very different power needs and consumption characteristics, which makes this a non-trivial goal in chip design.

Mixed-signal functionality involves both traditional active elements (like transistors) and well-performing passive elements (like coils, capacitors, and resistors) on the same chip. This requires additional modelling understanding and options from manufacturing technologies. High voltage transistors might be needed in the power management functions on a chip with digital functionality, possibly with a low-power CMOS processor system. Some advanced mixed-signal technologies may enable combining analog sensor elements (like pressure sensors or imaging diodes) on the same chip with an ADC.

Typically, mixed-signal ICs do not necessarily need the fastest digital performance. Instead, they need more mature models of active and passive elements for more accurate simulations and verification, such as for testability planning and reliability estimations. Therefore, mixed-signal circuits are typically realized with larger line widths than the highest speed and densest digital logic, and the implementation technologies can be two to four generations behind the latest digital-only implementation technologies. Additionally, mixed signal processing may need passive elements like resistors, capacitors, and coils, which may require specialized metal, dielectric layers, or similar adaptations of standard fabrication processes. Because of these specific requirements, mixed-signal ICs and digital ICs can have different manufacturers (known as foundries).

Applications

There are numerous applications of mixed-signal integrated circuits, such as in mobile phones, modern radio and telecommunication systems, sensor systems with on-chip standardized digital interfaces (including I2C, UART, SPI, or CAN), voice-related signal processing, aerospace and space electronics, the Internet of things (IoT), unmanned aerial vehicles (UAVs), and automotive and other electrical vehicles. Mixed-signal circuits or systems are typically cost-effective solutions, such as for building modern consumer electronics and in industrial, medical, measurement, and space applications.

Examples of mixed-signal integrated circuits include data converters using delta-sigma modulation, analog-to-digital converters and digital-to-analog converters using error detection and correction, and digital radio chips. Digitally controlled sound chips are also mixed-signal circuits. With the advent of cellular and network technology, this category now includes cellular telephone, software radio, and LAN and WAN router integrated circuits.

Design and development

Typically, mixed-signal chips perform some whole function or sub-function in a larger assembly, such as the radio subsystem of a cell phone, or the read data path and laser SLED control logic of a DVD player. Mixed-signal ICs often contain an entire system-on-a-chip. They may also contain on-chip memory blocks (like OTP), which complicates the manufacturing compared to analog ICs. A mixed-signal IC minimizes off-chip interconnects between digital and analog functionality in the system—typically reducing size and weight due to minimized packaging and a smaller module substrate—and therefore increases the reliability of the system.

Because of the use of both digital signal processing and analog circuitry, mixed-signal ICs are usually designed for a very specific purpose. Their design requires a high level of expertise and careful use of computer aided design (CAD) tools. There also exists specific design tools (like mixed-signal simulators) or description languages (like VHDL-AMS). Automated testing of the finished chips can also be challenging. Teradyne, Keysight, and Advantest are the major suppliers of the test equipment for mixed-signal chips.

There are several particular challenges of mixed-signal circuit manufacturing:

Variations

Mixed-signal devices are available as standard parts, but sometimes custom-designed application-specific integrated circuits (ASICs) are necessary. ASICs are designed for new applications, when new standards emerge, or when new energy source(s)[ clarification needed ] are implemented in the system. Due to their specialization, ASICs are usually only developed when production volumes are estimated to be high. The availability of ready-and-tested analog- and mixed-signal IP blocks from foundries or dedicated design houses has lowered the gap to realize mixed-signal ASICs.

There also exist mixed-signal field-programmable gate arrays (FPGAs) and microcontrollers. [note 1] In these, the same chip that handles digital logic may contain mixed-signal structures like analog-to-digital and digital-to-analog converter(s), operational amplifiers, or wireless connectivity blocks. [8] These mixed-signal FPGAs and microcontrollers are bridging the gap between standard mixed-signal devices, full-custom ASICs, and embedded software; they offer a solution during product development or when product volume is too low to justify an ASIC. However, they can have performance limitations, such as the resolution of the analog-to-digital converters, the speed of digital-to-analog conversion, or a limited number of inputs and outputs. Nevertheless, they can speed up the system architecture design, prototyping, and even production (at small and medium scales). Their usage also can be supported with development boards, development community, and possibly software support.

History

MOS switched-capacitor circuits

The MOSFET was invented at Bell Labs between 1955 and 1960, after Frosch and Derick discovered and used surface passivation by silicon dioxide to create the first planar transistors, the first in which drain and source were adjacent at the same surface. [9] [10] [11] [12] [13] Robert Noyce and Jack Kilby invention of the silicon integrated cicruit was enabled by the planar process developed by Jean Hoerni. [14] In turn, Hoerni's planar process was inspired by the surface passivation method developed at Bell Labs by Carl Frosch and Lincoln Derick in 1955 and 1957. [15] [16] [17] [18] [19] [20] [21]

MOS technology eventually became practical for telephony applications with the MOS mixed-signal integrated circuit, which combines analog and digital signal processing on a single chip, developed by former Bell engineer David A. Hodges with Paul R. Gray at UC Berkeley in the early 1970s. [22] In 1974, Hodges and Gray worked with R.E. Suarez to develop MOS switched capacitor (SC) circuit technology, which they used to develop a digital-to-analog converter (DAC) chip, using MOS capacitors and MOSFET switches for data conversion. [22] MOS analog-to-digital converter (ADC) and DAC chips were commercialized by 1974. [23]

MOS SC circuits led to the development of pulse-code modulation (PCM) codec-filter chips in the late 1970s. [22] [24] The silicon-gate CMOS (complementary MOS) PCM codec-filter chip, developed by Hodges and W.C. Black in 1980, [22] has since been the industry standard for digital telephony. [22] [24] By the 1990s, telecommunication networks such as the public switched telephone network (PSTN) had been largely digitized with very-large-scale integration (VLSI) CMOS PCM codec-filters, widely used in electronic switching systems for telephone exchanges, private branch exchanges (PBX), and key telephone systems (KTS); user-end modems; data transmission applications such as digital loop carriers, pair gain multiplexers, telephone loop extenders, integrated services digital network (ISDN) terminals, digital cordless telephones, and digital cell phones; and applications such as speech recognition equipment, voice data storage, voice mail, and digital tapeless answering machines. [24] The bandwidth of digital telecommunication networks has been rapidly increasing at an exponential rate, as observed by Edholm's law, [25] largely driven by the rapid scaling and miniaturization of MOS technology. [26] [22]

RF CMOS circuits

While working at Bell Labs in the early 1980s, Pakistani engineer Asad Abidi worked on the development of sub-micron MOSFET (metal–oxide–semiconductor field-effect transistor) VLSI (very large-scale integration) technology at the Advanced LSI Development Lab, along with Marty Lepselter, George E. Smith, and Harry Bol. As one of the few circuit designers at the lab, Abidi demonstrated the potential of sub-micron NMOS integrated circuit technology in high-speed communication circuits, and developed the first MOS amplifiers for Gb/s data rates in optical fiber receivers. Abidi's work was initially met with skepticism from proponents of gallium arsenide and bipolar junction transistors, the dominant technologies for high-speed circuits at the time. In 1985, he joined UCLA, where he pioneered RF CMOS technology in the late 1980s. His work changed the way in which radio-frequency (RF) circuits would be designed, away from discrete bipolar transistors and towards CMOS integrated circuits. [27]

Abidi was researching analog CMOS circuits for signal processing and communications during the late 1980s to early 1990s. In the mid-1990s, the RF CMOS technology that he pioneered was widely adopted in wireless networking, as mobile phones began entering widespread use. As of 2008, the radio transceivers in all wireless networking devices and modern mobile phones are mass-produced as RF CMOS devices. [27]

The baseband processors [28] [29] and radio transceivers in all modern wireless networking devices and mobile phones are mass-produced using RF CMOS devices. [27] RF CMOS circuits are widely used to transmit and receive wireless signals in a variety of applications, such as satellite technology (such as GPS), Bluetooth, Wi-Fi, near-field communication (NFC), mobile networks (such as 3G, 4G, and 5G), terrestrial broadcast, and automotive radar applications, among other uses. [30] RF CMOS technology is crucial to modern wireless communications, including wireless networks and mobile communication devices. [31]

Commercial examples

See also

Notes

  1. Mixed-signal FPGAs are an extension of field-programmable analog arrays.
  2. Some foundries may also have design service or list of partners capable for mixed signal design services for their technologies.

Related Research Articles

<span class="mw-page-title-main">Electronics</span> Branch of physics and electrical engineering

Electronics is a scientific and engineering discipline that studies and applies the principles of physics to design, create, and operate devices that manipulate electrons and other electrically charged particles. It is a subfield of physics and electrical engineering which uses active devices such as transistors, diodes, and integrated circuits to control and amplify the flow of electric current and to convert it from one form to another, such as from alternating current (AC) to direct current (DC) or from analog signals to digital signals.

<span class="mw-page-title-main">Integrated circuit</span> Electronic circuit formed on a small, flat piece of semiconductor material

An integrated circuit (IC), also known as a microchip, computer chip, or simply chip, is a small electronic device made up of multiple interconnected electronic components such as transistors, resistors, and capacitors. These components are etched onto a small piece of semiconductor material, usually silicon. Integrated circuits are used in a wide range of electronic devices, including computers, smartphones, and televisions, to perform various functions such as processing and storing information. They have greatly impacted the field of electronics by enabling device miniaturization and enhanced functionality.

<span class="mw-page-title-main">Digital electronics</span> Electronic circuits that utilize digital signals

Digital electronics is a field of electronics involving the study of digital signals and the engineering of devices that use or produce them. This is in contrast to analog electronics which work primarily with analog signals. Despite the name, digital electronics designs includes important analog design considerations.

<span class="mw-page-title-main">Semiconductor device</span> Electronic component that exploits the electronic properties of semiconductor materials

A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum or as free electrons and ions through an ionized gas.

<span class="mw-page-title-main">MOSFET</span> Type of field-effect transistor

In electronics, the metal–oxide–semiconductor field-effect transistor is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term metal–insulator–semiconductor field-effect transistor (MISFET) is almost synonymous with MOSFET. Another near-synonym is insulated-gate field-effect transistor (IGFET).

<span class="mw-page-title-main">CMOS</span> Technology for constructing integrated circuits

Complementary metal–oxide–semiconductor is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips, and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors, data converters, RF circuits, and highly integrated transceivers for many types of communication.

<span class="mw-page-title-main">Application-specific integrated circuit</span> Integrated circuit customized for a specific task

An application-specific integrated circuit is an integrated circuit (IC) chip customized for a particular use, rather than intended for general-purpose use, such as a chip designed to run in a digital voice recorder or a high-efficiency video codec. Application-specific standard product chips are intermediate between ASICs and industry standard integrated circuits like the 7400 series or the 4000 series. ASIC chips are typically fabricated using metal–oxide–semiconductor (MOS) technology, as MOS integrated circuit chips.

Bipolar CMOS (BiCMOS) is a semiconductor technology that integrates two semiconductor technologies, those of the bipolar junction transistor and the CMOS logic gate, into a single integrated circuit. In more recent times the bipolar processes have been extended to include high mobility devices using silicon–germanium junctions.

<span class="mw-page-title-main">Gate array</span> Type of integrated circuit

A gate array is an approach to the design and manufacture of application-specific integrated circuits (ASICs) using a prefabricated chip with components that are later interconnected into logic devices according to custom order by adding metal interconnect layers in the factory. It was popular during the upheaval in the semiconductor industry in the 1980s, and its usage declined by the end of the 1990s.

In computer engineering, a logic family is one of two related concepts:

Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory uses floating-gate memory cells, which consist of a single floating-gate transistor per cell.

<span class="mw-page-title-main">Depletion-load NMOS logic</span> Form of digital logic family in integrated circuits

In integrated circuits, depletion-load NMOS is a form of digital logic family that uses only a single power supply voltage, unlike earlier NMOS logic families that needed more than one different power supply voltage. Although manufacturing these integrated circuits required additional processing steps, improved switching speed and the elimination of the extra power supply made this logic family the preferred choice for many microprocessors and other logic elements.

<span class="mw-page-title-main">Integrated circuit design</span> Engineering process for electronic hardware

Integrated circuit design, semiconductor design, chip design or IC design, is a sub-field of electronics engineering, encompassing the particular logic and circuit design techniques required to design integrated circuits, or ICs. ICs consist of miniaturized electronic components built into an electrical network on a monolithic semiconductor substrate by photolithography.

A linear integrated circuit or analog chip is a set of miniature electronic analog circuits formed on a single piece of semiconductor material.

The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, typically longer than 10 years in modern devices. Usually Fowler-Nordheim tunneling or hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG.

<span class="mw-page-title-main">Electronic circuit</span> Electrical circuit with active components

An electronic circuit is composed of individual electronic components, such as resistors, transistors, capacitors, inductors and diodes, connected by conductive wires or traces through which electric current can flow. It is a type of electrical circuit. For a circuit to be referred to as electronic, rather than electrical, generally at least one active component must be present. The combination of components and wires allows various simple and complex operations to be performed: signals can be amplified, computations can be performed, and data can be moved from one place to another.

A transistor is a semiconductor device with at least three terminals for connection to an electric circuit. In the common case, the third terminal controls the flow of current between the other two terminals. This can be used for amplification, as in the case of a radio receiver, or for rapid switching, as in the case of digital circuits. The transistor replaced the vacuum-tube triode, also called a (thermionic) valve, which was much larger in size and used significantly more power to operate. The first transistor was successfully demonstrated on December 23, 1947, at Bell Laboratories in Murray Hill, New Jersey. Bell Labs was the research arm of American Telephone and Telegraph (AT&T). The three individuals credited with the invention of the transistor were William Shockley, John Bardeen and Walter Brattain. The introduction of the transistor is often considered one of the most important inventions in history.

Edholm's law, proposed by and named after Phil Edholm, refers to the observation that the three categories of telecommunication, namely wireless (mobile), nomadic and wired networks (fixed), are in lockstep and gradually converging. Edholm's law also holds that data rates for these telecommunications categories increase on similar exponential curves, with the slower rates trailing the faster ones by a predictable time lag. Edholm's law predicts that the bandwidth and data rates double every 18 months, which has proven to be true since the 1970s. The trend is evident in the cases of Internet, cellular (mobile), wireless LAN and wireless personal area networks.

<span class="mw-page-title-main">RF CMOS</span> Integrated circuit technology that integrates radio-frequency, analog and digital electronics

RF CMOS is a metal–oxide–semiconductor (MOS) integrated circuit (IC) technology that integrates radio-frequency (RF), analog and digital electronics on a mixed-signal CMOS RF circuit chip. It is widely used in modern wireless telecommunications, such as cellular networks, Bluetooth, Wi-Fi, GPS receivers, broadcasting, vehicular communication systems, and the radio transceivers in all modern mobile phones and wireless networking devices. RF CMOS technology was pioneered by Pakistani engineer Asad Ali Abidi at UCLA during the late 1980s to early 1990s, and helped bring about the wireless revolution with the introduction of digital signal processing in wireless communications. The development and design of RF CMOS devices was enabled by van der Ziel's FET RF noise model, which was published in the early 1960s and remained largely forgotten until the 1990s.

References

  1. Saraju Mohanty, Nanoelectronic Mixed-Signal System Design, McGraw-Hill, 2015, ISBN   978-0071825719 and 0071825711.
  2. "Mixed-Signal IC Design". quote: "mixed-signal (IC's with mixed analog and digital circuits on a single chip)"
  3. Mark Burns and Gordon W. Roberts, "An Introduction to Mixed-Signal IC Test and Measurement", 2001.
  4. "ESS Mixed Signal Circuits" Archived 2010-10-11 at the Wayback Machine
  5. Chang, J.J.; Myunghee Lee; Sungyong Jung; Brooke, M.A.; Jokerst, N.M.; Wills, D.S. (1999). "Fully differential current-input CMOS amplifier front-end suppressing mixed signal substrate noise for optoelectronic applications". ISCAS'99. Proceedings of the 1999 IEEE International Symposium on Circuits and Systems VLSI (Cat. No.99CH36349). Vol. 1. pp. 327–330. doi:10.1109/ISCAS.1999.777869. ISBN   0-7803-5471-0. S2CID   206955680.
  6. Singh, R. (1997). "Substrate noise issues in mixed-signal chip designs using Spice". International Conference on Electromagnetic Compatibility. Vol. 1997. pp. 108–112. doi:10.1049/cp:19971128. ISBN   0-85296-695-4.
  7. "Mixed-Signal IC Merges 14-Bit ADC With DSP In 0.18-μm CMOS"
  8. "Microsemi Fusion mixed-signal FPGA"
  9. US2802760A,Lincoln, Derick&Frosch, Carl J.,"Oxidation of semiconductive surfaces for controlled diffusion",issued 1957-08-13
  10. Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
  11. Lojek, Bo (2007). History of Semiconductor Engineering. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg. p. 321. ISBN   978-3-540-34258-8.
  12. Ligenza, J.R.; Spitzer, W.G. (1960). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. doi:10.1016/0022-3697(60)90219-5.
  13. Lojek, Bo (2007). History of Semiconductor Engineering. Springer Science & Business Media. p. 120. ISBN   9783540342588.
  14. Christophe Lécuyer (2006). Making Silicon Valley: Innovation and the Growth of High Tech, 1930-1970 . MIT Press. pp.  214–252. ISBN   978-0-262-12281-8. fairchild planar Making Silicon Valley.
  15. US2802760A,Lincoln, Derick&Frosch, Carl J.,"Oxidation of semiconductive surfaces for controlled diffusion",issued 1957-08-13
  16. Huff, Howard; Riordan, Michael (2007-09-01). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN   1064-8208.
  17. Lojek, Bo (2007). History of Semiconductor Engineering. Springer Science & Business Media. p. 120. ISBN   9783540342588.
  18. Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
  19. Moskowitz, Sanford L. (2016). Advanced Materials Innovation: Managing Global Technology in the 21st century. John Wiley & Sons. p. 168. ISBN   978-0-470-50892-3.
  20. Christophe Lécuyer; David C. Brook; Jay Last (2010). Makers of the Microchip: A Documentary History of Fairchild Semiconductor. MIT Press. pp. 62–63. ISBN   978-0-262-01424-3.
  21. Claeys, Cor L. (2003). ULSI Process Integration III: Proceedings of the International Symposium. The Electrochemical Society. pp. 27–30. ISBN   978-1-56677-376-8.
  22. 1 2 3 4 5 6 Allstot, David J. (2016). "Switched Capacitor Filters" (PDF). In Maloberti, Franco; Davies, Anthony C. (eds.). A Short History of Circuits and Systems: From Green, Mobile, Pervasive Networking to Big Data Computing. IEEE Circuits and Systems Society. pp. 105–110. ISBN   9788793609860.
  23. Electronic Components. U.S. Government Printing Office. 1974. p. 46.
  24. 1 2 3 Floyd, Michael D.; Hillman, Garth D. (8 October 2018) [1st pub. 2000]. "Pulse-Code Modulation Codec-Filters". The Communications Handbook (2nd ed.). CRC Press. pp. 26–1, 26–2, 26–3. ISBN   9781420041163.
  25. Cherry, Steven (2004). "Edholm's law of bandwidth". IEEE Spectrum. 41 (7): 58–60. doi:10.1109/MSPEC.2004.1309810. S2CID   27580722.
  26. Jindal, Renuka P. (2009). "From millibits to terabits per second and beyond - over 60 years of innovation". 2009 2nd International Workshop on Electron Devices and Semiconductor Technology. pp. 1–6. doi:10.1109/EDST.2009.5166093. ISBN   978-1-4244-3831-0. S2CID   25112828.
  27. 1 2 3 O'Neill, A. (2008). "Asad Abidi Recognized for Work in RF-CMOS". IEEE Solid-State Circuits Society Newsletter. 13 (1): 57–58. doi:10.1109/N-SSC.2008.4785694. ISSN   1098-4232.
  28. Chen, Wai-Kai (2018). The VLSI Handbook. CRC Press. pp. 60–2. ISBN   9781420005967.
  29. Morgado, Alonso; Río, Rocío del; Rosa, José M. de la (2011). Nanometer CMOS Sigma-Delta Modulators for Software Defined Radio. Springer Science & Business Media. p. 1. ISBN   9781461400370.
  30. Veendrick, Harry J. M. (2017). Nanometer CMOS ICs: From Basics to ASICs. Springer. p. 243. ISBN   9783319475974.
  31. "Infineon Hits Bulk-CMOS RF Switch Milestone". EE Times . 20 November 2018. Retrieved 26 October 2019.

Further reading