This article needs additional citations for verification .(February 2022) |
Company type | Public |
---|---|
TASE: TSEM TA-35 Index component | |
Industry | Semiconductor |
Founded | 1993 |
Headquarters | , |
Key people | Russell Ellwanger (CEO) Amir Elstein (Chairman) |
Revenue | US$ 1.42 billion (2023) [1] |
Subsidiaries | Tower Semiconductor Newport Beach, Inc (previously Jazz Semiconductor) |
Website | www |
Tower Semiconductor Ltd. is an Israeli company that manufactures integrated circuits using specialty process technologies, including SiGe, BiCMOS, Silicon Photonics, SOI, [2] mixed-signal and RFCMOS, CMOS image sensors, [3] [4] non-imaging sensors, power management (BCD), and non-volatile memory (NVM) as well as MEMS capabilities. Tower Semiconductor also owns 51% of TPSCo, [5] an enterprise with Nuvoton Technology Corporation Japan (NTCJ).
The company manufactures specialty analog integrated circuits for semiconductor companies such as: On Semiconductor, Intel, [6] Broadcom, Panasonic, Teledyne, Samsung, Skyworks Solutions, Semtech and Vishay Siliconix. Moreover, the company also has Qualified open foundry Silicon Photonics platform which is used by companies such as Inphi Corporation. [7] Tower Semiconductor operates seven manufacturing facilities: Fab 1 and Fab 2 (150mm and 200mm) located in Migdal Haemek, Israel, Fab 3 and Fab 9 (200 mm) located in Newport Beach, California and in San Antonio, Texas, two additional fabs (200 mm and 300 mm) through TPSCo located in the Hokuriku region of Japan, and is sharing a 300 mm manufacturing facility being established in Italy with ST Microelectronics. In addition, Tower Semiconductor operates a worldwide design center in Netanya, Israel.
Tower Semiconductor is an Israeli public company that is traded on NASDAQ and the Tel Aviv Stock Exchange, both under the ticker TSEM, and is included in the TA-35 Index and the TA BlueTech Index. In 2010, Tower Semiconductor became the #1 specialty foundry by revenue, with 70% revenue growth year-over-year. [8]
Tower Semiconductor was founded in 1993, with the acquisition of National Semiconductor’s 150mm wafer fabrication facility in Migdal Haemek, Israel. Tower became a public company in 1994 and shares are traded on NASDAQ (TSEM) and Tel Aviv Stock Exchange (TSEM). In January 2001, an adjacent facility (Fab 2) was constructed.
In September 2008, Tower acquired Jazz Semiconductor in a stock for stock transaction. In November 2009, the combined companies officially launched as TowerJazz.[ citation needed ]
In June 2011, TowerJazz acquired Micron Technology's fabrication facility in Nishiwaki City, Hyogo, Japan. The acquisition nearly doubled TowerJazz's 2010 internal manufacturing capacity and cost-effectively increased production by 60,000 wafers per month.
In April 2014, TowerJazz announced the successful transaction with Panasonic Corporation (First Section of TSE and NSE ticker: 6752) to form a newly established Japanese company, TowerJazz Panasonic Semiconductor Co. (TPSCo) for the manufacture of Panasonic and additional third-party products. TowerJazz announced cessation of its Nishiwaki facility operations in the course of rationalizing and restructuring its manufacturing and business activities in Japan. This enables the company to reduce its annual fixed costs by approximately $130 million per annum.[ citation needed ]
In February 2016, TowerJazz announced the successful acquisition of an 8-inch wafer fabrication facility in San Antonio, Texas, United States from Maxim Integrated Products, Inc., the consideration, of $40 million was paid by approximately 3.3 million ordinary TowerJazz shares. This acquisition increased TowerJazz's production by 28,000 wafers per month.
On 21 August 2017, TowerJazz, and Tacoma (Nanjing) Semiconductor Technology Co., Ltd announced that TowerJazz received a first payment from Tacoma (Nanjing) according to their agreement for establishing a partnership to build a wafer fab in China. TowerJazz would provide its technical knowledge and project management skills, meanwhile Tacoma (Nanjing), and a Chinese regional authorities named Nanjing Economic and Technology Development Zone, would fully support and fund the project. [9] [10] On 22 June 2020, the Chinese court announced that Tacoma (Nanjing) Semiconductor Technology Co., Ltd was in bankruptcy proceedings. [11]
On March 1, 2020, TowerJazz announced a new brand identity. As of March 2020, the company's official brand name is Tower Semiconductor and includes all of the company's worldwide subsidiaries. [12]
On February 15, 2022, Intel announced an agreement to acquire Tower Semiconductor for $5.4 billion. [13] [14] On August 16, 2023, Intel terminated the acquisition as it failed to obtain approval from Chinese regulators within the 18-month transaction deadline period and will pay a termination fee of $353 million to Tower. [15] [16]
Fab 1, located in Migdal Haemek, Israel is a 150 mm (wafer diameter) facility which was acquired from National Semiconductor in 1993 at the time of Tower Semiconductor's founding. Since that time, Fab 1 has been significantly modernized and offers process geometries ranging from 1.0-micron to 0.35-micron including CMOS image sensors, embedded flash and mixed-signal technologies.
Fab 2, a 200 mm wafer facility was constructed in January 2001, adjacent to Fab 1 in Migdal Haemek, Israel and was designed to operate in geometries of 0.18-micron and below, using advanced CMOS technology.
Fab 3, located in Newport Beach, California, United States was acquired by Tower when it merged with Jazz Technologies in 2008. Jazz Semiconductor was formed in 2002 and inherited the 200mm facility that was once operated by Rockwell Semiconductor. At Fab 3, Jazz established SiGe, BiCMOS and MEMS technologies and expanded upon its heritage for on-shore, specialized foundry services focused on the Aerospace and Defense industry.[ citation needed ]
Fab 9, located in San Antonio, Texas, United States was acquired by Tower in 2016 from Maxim Integrated. [17]
TPSCo is 51% owned by Tower Semiconductor Ltd. (NASDAQ: TSEM, TASE: TSEM) and 49% owned by Nuvoton Technology Corporation Japan (NTCJ). TPSCo has three (only two are working [18] ) manufacturing facilities in Hokuriku, Japan (Uozu, Tonami, and not working Arai) which have been producing large scale integrated circuits for over 30 years. Areas of process technology focus include high dynamic range image sensors (CIS and CCD), integrated power devices (BCD, SOI and LDMOS) and high frequency silicon RFCMOS. TPSCo offers both IDMs and fabless companies over 120 qualified silicon process flows on 200mm and 300mm substrates from super micron to 45 nm, as well as internal back end processing, assembly and test services.[ citation needed ]
Tower Semiconductor offers [19] a broad range of advanced analog process technologies. The company's analog technology offerings include: SiGe BiCMOS, Silicon Photonics, and RF CMOS (SOI and bulk) for radio frequency (RF) and high performance analog (HPA) applications; CMOS image sensor (CIS); non-imaging sensors, power management, including 700 V BCD; CMOS; mixed-signal CMOS and MEMS capabilities. Tower Semiconductor's modular and customizable processes are available on either 150 mm, 200 mm or 300 mm wafers in its seven fabrication facilities.
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips. It is a multiple-step photolithographic and physico-chemical process during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.
In electronics, a wafer is a thin slice of semiconductor, such as a crystalline silicon, used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells.
National Semiconductor Corporation was an American semiconductor manufacturer which specialized in analog devices and subsystems, formerly with headquarters in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.
STMicroelectronics NV is a multinational corporation and technology company of French-Italian origin. Incorporated in the Netherlands, its headquarters are in Plan-les-Ouates, Switzerland and it is listed on the New York Stock Exchange, the Euronext Paris and the Borsa Italiana in Milan. ST is the largest European semiconductor contract manufacturing and design company. The company resulted from the merger of two government-owned semiconductor companies in 1987: Thomson Semiconducteurs of France and SGS Microelettronica of Italy.
Taiwan Semiconductor Manufacturing Company Limited is a Taiwanese multinational semiconductor contract manufacturing and design company. It is the world's second-most valuable semiconductor company, the world's largest dedicated independent ("pure-play") semiconductor foundry, and its country's largest company, with headquarters and main operations located in the Hsinchu Science Park in Hsinchu, Taiwan. Although the central government of Taiwan is the largest individual shareholder, the majority of TSMC is owned by foreign investors. In 2023, the company was ranked 44th in the Forbes Global 2000.
Fabless manufacturing is the design and sale of hardware devices and semiconductor chips while outsourcing their fabrication to a specialized manufacturer called a semiconductor foundry. These foundries are typically, but not exclusively, located in the United States, China, and Taiwan. Fabless companies can benefit from lower capital costs while concentrating their research and development resources on the end market. Some fabless companies and pure play foundries may offer integrated-circuit design services to third parties.
In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate, to reduce parasitic capacitance within the device, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire. The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application.
The 90 nm process refers to the technology used in semiconductor manufacturing to create integrated circuits with a minimum feature size of 90 nanometers. It was an advancement over the previous 130 nm process. Eventually, it was succeeded by smaller process nodes, such as the 65 nm, 45 nm, and 32 nm processes.
Wafer fabrication is a procedure composed of many repeated sequential processes to produce complete electrical or photonic circuits on semiconductor wafers in semiconductor device fabrication process. Examples include production of radio frequency (RF) amplifiers, LEDs, optical computer components, and microprocessors for computers. Wafer fabrication is used to build components with the necessary electrical structures.
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In the microelectronics industry, a semiconductor fabrication plant is a factory for semiconductor device fabrication.
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