Electronics is a scientific and engineering discipline that studies and applies the principles of physics to design, create, and operate devices that manipulate electrons and other electrically charged particles. Electronics is a subfield of electrical engineering, but it differs from it in that it focuses on using active devices such as transistors, diodes, and integrated circuits to control and amplify the flow of electric current and to convert it from one form to another, such as from alternating current (AC) to direct current (DC) or from analog to digital. Electronics also encompasses the fields of microelectronics, nanoelectronics, optoelectronics, and quantum electronics, which deal with the fabrication and application of electronic devices at microscopic, nanoscopic, optical, and quantum scales.
An integrated circuit is a set of electronic circuits on one small flat piece of semiconductor material, usually silicon. In an IC, a large numbers of miniaturized transistors and other electronic components are integrated together on the chip. This results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete components, allowing a large transistor count.
MEMS is the technology of microscopic devices incorporating both electronic and moving parts. MEMS are made up of components between 1 and 100 micrometres in size, and MEMS devices generally range in size from 20 micrometres to a millimetre, although components arranged in arrays can be more than 1000 mm2. They usually consist of a central unit that processes data and several components that interact with the surroundings.
Wire bonding is the method of making interconnections between an integrated circuit (IC) or other semiconductor device and its packaging during semiconductor device fabrication. Although less common, wire bonding can be used to connect an IC to other electronics or to connect from one printed circuit board (PCB) to another. Wire bonding is generally considered the most cost-effective and flexible interconnect technology and is used to assemble the vast majority of semiconductor packages. Wire bonding can be used at frequencies above 100 GHz.
Ball bonding is a type of wire bonding, and is the most common way to make the electrical interconnections between a bare silicon die and the lead frame of the package it is placed in during semiconductor device fabrication.
Flip chip, also known as controlled collapse chip connection or its abbreviation, C4, is a method for interconnecting dies such as semiconductor devices, IC chips, integrated passive devices and microelectromechanical systems (MEMS), to external circuitry with solder bumps that have been deposited onto the chip pads. The technique was developed by General Electric's Light Military Electronics Department, Utica, New York. The solder bumps are deposited on the chip pads on the top side of the wafer during the final wafer processing step. In order to mount the chip to external circuitry, it is flipped over so that its top side faces down, and aligned so that its pads align with matching pads on the external circuit, and then the solder is reflowed to complete the interconnect. This is in contrast to wire bonding, in which the chip is mounted upright and fine wires are welded onto the chip pads and lead frame contacts to interconnect the chip pads to external circuitry.
Tape-automated bonding (TAB) is a process that places bare semiconductor chips (dies) like integrated circuits onto a flexible circuit board (FPC) by attaching them to fine conductors in a polyamide or polyimide film carrier. This FPC with the die(s) can be mounted on the system or module board or assembled inside a package. Typically the FPC includes from one to three conductive layers and all inputs and outputs of the semiconductor die are connected simultaneously during the TAB bonding. Tape automated bonding is one of the methods needed for achieving chip-on-flex (COF) assembly and it is one of the first roll-to-roll processing type methods in the electronics manufacturing.
In electronic engineering, a through-silicon via (TSV) or through-chip via is a vertical electrical connection (via) that passes completely through a silicon wafer or die. TSVs are high-performance interconnect techniques used as an alternative to wire-bond and flip chips to create 3D packages and 3D integrated circuits. Compared to alternatives such as package-on-package, the interconnect and device density is substantially higher, and the length of the connections becomes shorter.
A three-dimensional integrated circuit is a MOS integrated circuit (IC) manufactured by stacking as many as 16 or more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu connections, so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint than conventional two dimensional processes. The 3D IC is one of several 3D integration schemes that exploit the z-direction to achieve electrical performance benefits in microelectronics and nanoelectronics.
Beam lead technology is a method of fabricating a semiconductor device. Its initial application was for high-frequency silicon switching transistors and high-speed integrated circuits. This technology eliminated the labor-intensive wire-bonding process that was commonly used for integrated circuits at the time. It also enabled the automated assembly of semiconductor chips onto larger substrates, facilitating the production of hybrid integrated circuits.
Integrated passive devices (IPDs), also known as integrated passive components (IPCs) or embedded passive components (EPC), are electronic components where resistors (R), capacitors (C), inductors (L)/coils/chokes, microstriplines, impedance matching elements, baluns or any combinations of them are integrated in the same package or on the same substrate. Sometimes integrated passives can also be called as embedded passives, and still the difference between integrated and embedded passives is technically unclear. In both cases passives are realized in between dielectric layers or on the same substrate.
Thick-film technology is used to produce electronic devices/modules such as surface mount devices modules, hybrid integrated circuits, heating elements, integrated passive devices and sensors. Main manufacturing technique is screen printing (stenciling), which in addition to use in manufacturing electronic devices can also be used for various graphic reproduction targets. It became one of the key manufacturing/miniaturisation techniques of electronic devices/modules during 1950s. Typical film thickness – manufactured with thick film manufacturing processes for electronic devices – is 0.0001 to 0.1 mm.
Thermosonic bonding is widely used to wire bond silicon integrated circuits into computers. Alexander Coucoulas was named "Father of Thermosonic Bonding" by George Harman, the world's foremost authority on wire bonding, where he referenced Coucoulas's leading edge publications in his book, Wire Bonding In Microelectronics. Owing to the well proven reliability of thermosonic bonds, it is extensively used to connect the central processing units (CPUs), which are encapsulated silicon integrated circuits that serve as the "brains" of today's computers.
Thermocompression bonding describes a wafer bonding technique and is also referred to as diffusion bonding, pressure joining, thermocompression welding or solid-state welding. Two metals, e.g. gold-gold (Au), are brought into atomic contact applying force and heat simultaneously. The diffusion requires atomic contact between the surfaces due to the atomic motion. The atoms migrate from one crystal lattice to the other one based on crystal lattice vibration. This atomic interaction sticks the interface together. The diffusion process is described by the following three processes:
Cladding is the bonding together of dissimilar metals. It is different from fusion welding or gluing as a method to fasten the metals together. Cladding is often achieved by extruding two metals through a die as well as pressing or rolling sheets together under high pressure.
Eutectic bonding, also referred to as eutectic soldering, describes a wafer bonding technique with an intermediate metal layer that can produce a eutectic system. Those eutectic metals are alloys that transform directly from solid to liquid state, or vice versa from liquid to solid state, at a specific composition and temperature without passing a two-phase equilibrium, i.e. liquid and solid state. The fact that the eutectic temperature can be much lower than the melting temperature of the two or more pure elements can be important in eutectic bonding.
The first planar monolithic integrated circuit (IC) chip was demonstrated in 1960. The idea of integrating electronic circuits into a single device was born when the German physicist and engineer Werner Jacobi developed and patented the first known integrated transistor amplifier in 1949 and the British radio engineer Geoffrey Dummer proposed to integrate a variety of standard electronic components in a monolithic semiconductor crystal in 1952. A year later, Harwick Johnson filed a patent for a prototype IC. Between 1953 and 1957, Sidney Darlington and Yasuo Tarui proposed similar chip designs where several transistors could share a common active area, but there was no electrical isolation to separate them from each other.
Compliant bonding is used to connect gold wires to electrical components such as integrated circuit "chips". It was invented by Alexander Coucoulas in the 1960s. The bond is formed well below the melting point of the mating gold surfaces and is therefore referred to as a solid-state type bond. The compliant bond is formed by transmitting heat and pressure to the bond region through a relatively thick indentable or compliant medium, generally an aluminum tape.
Chip on board (COB) is a method of circuit board manufacturing in which the integrated circuits (e.g. microprocessors) are attached (wired, bonded directly) to a printed circuit board, and covered by a blob of epoxy. By eliminating the packaging of individual semiconductor devices, the completed product can be more compact, lighter, and less costly. In some cases, COB construction improves the operation of radio frequency systems by reducing the inductance and capacitance of integrated circuit leads.
Glossary of microelectronics manufacturing terms
