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A laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. The word laser is an anacronym that originated as an acronym for light amplification by stimulated emission of radiation. The first laser was built in 1960 by Theodore Maiman at Hughes Research Laboratories, based on theoretical work by Charles H. Townes and Arthur Leonard Schawlow.
In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there is no generated current due to no net charge carrier mobility. However, if some electrons transfer from the valence band to the conduction band, then current can flow. Therefore, the band gap is a major factor determining the electrical conductivity of a solid. Substances having large band gaps are generally insulators, those with small band gaps are semiconductor, and conductors either have very small band gaps or none, because the valence and conduction bands overlap to form a continuous band.
A laser diode is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction.
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.
The vertical-cavity surface-emitting laser is a type of semiconductor laser diode with laser beam emission perpendicular from the top surface, contrary to conventional edge-emitting semiconductor lasers which emit from surfaces formed by cleaving the individual chip out of a wafer. VCSELs are used in various laser products, including computer mice, fiber optic communications, laser printers, Face ID, and smartglasses.
A diode-pumped solid-state laser (DPSSL) is a solid-state laser made by pumping a solid gain medium, for example, a ruby or a neodymium-doped YAG crystal, with a laser diode.
In physics, terahertz time-domain spectroscopy (THz-TDS) is a spectroscopic technique in which the properties of matter are probed with short pulses of terahertz radiation. The generation and detection scheme is sensitive to the sample's effect on both the amplitude and the phase of the terahertz radiation.
Yttrium aluminium garnet (YAG, Y3Al5O12) is a synthetic crystalline material of the garnet group. It is a cubic yttrium aluminium oxide phase, with other examples being YAlO3 (YAP) in a hexagonal or an orthorhombic, perovskite-like form, and the monoclinic Y4Al2O9 (YAM).
Zinc selenide is the inorganic compound with the formula ZnSe. It is a lemon-yellow solid although most samples have a duller color due to the effects of oxidation. It is an intrinsic semiconductor with a band gap of about 2.70 eV at 25 °C (77 °F). ZnSe occurs as the rare mineral stilleite, named after Hans Stille.
Quantum-cascade lasers (QCLs) are semiconductor lasers that emit in the mid- to far-infrared portion of the electromagnetic spectrum and were first demonstrated by Jérôme Faist, Federico Capasso, Deborah Sivco, Carlo Sirtori, Albert Hutchinson, and Alfred Cho at Bell Laboratories in 1994.
Thermophotovoltaic (TPV) energy conversion is a direct conversion process from heat to electricity via photons. A basic thermophotovoltaic system consists of a hot object emitting thermal radiation and a photovoltaic cell similar to a solar cell but tuned to the spectrum being emitted from the hot object.
Aluminium gallium indium phosphide is a semiconductor material that provides a platform for the development of multi-junction photovoltaics and optoelectronic devices. It spans a direct bandgap ranging from ultraviolet to infrared photon energies.
A distributed-feedback laser (DFB) is a type of laser diode, quantum-cascade laser or optical-fiber laser where the active region of the device contains a periodically structured element or diffraction grating. The structure builds a one-dimensional interference grating, and the grating provides optical feedback for the laser. This longitudinal diffraction grating has periodic changes in refractive index that cause reflection back into the cavity. The periodic change can be either in the real part of the refractive index or in the imaginary part. The strongest grating operates in the first order, where the periodicity is one-half wave, and the light is reflected backwards. DFB lasers tend to be much more stable than Fabry–Perot or DBR lasers and are used frequently when clean single-mode operation is needed, especially in high-speed fiber-optic telecommunications. Semiconductor DFB lasers in the lowest loss window of optical fibers at about 1.55 μm wavelength, amplified by erbium-doped fiber amplifiers (EDFAs), dominate the long-distance communication market, while DFB lasers in the lowest dispersion window at 1.3 μm are used at shorter distances.
In semiconductor physics, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are different, the material has an "indirect gap". The band gap is called "direct" if the crystal momentum of electrons and holes is the same in both the conduction band and the valence band; an electron can directly emit a photon. In an "indirect" gap, a photon cannot be emitted because the electron must pass through an intermediate state and transfer momentum to the crystal lattice.
An optical rectenna is a rectenna that works with visible or infrared light. A rectenna is a circuit containing an antenna and a diode, which turns electromagnetic waves into direct current electricity. While rectennas have long been used for radio waves or microwaves, an optical rectenna would operate the same way but with infrared or visible light, turning it into electricity.
A superluminescent diode is an edge-emitting semiconductor light source based on superluminescence. It combines the high power and brightness of laser diodes with the low coherence of conventional light-emitting diodes. Its emission optical bandwidth, also described as full-width at half maximum, can range from 5 up to 750 nm.
Interband cascade lasers (ICLs) are a type of laser diode that can produce coherent radiation over a large part of the mid-infrared region of the electromagnetic spectrum. They are fabricated from epitaxially-grown semiconductor heterostructures composed of layers of indium arsenide (InAs), gallium antimonide (GaSb), aluminum antimonide (AlSb), and related alloys. These lasers are similar to quantum cascade lasers (QCLs) in several ways. Like QCLs, ICLs employ the concept of bandstructure engineering to achieve an optimized laser design and reuse injected electrons to emit multiple photons. However, in ICLs, photons are generated with interband transitions, rather than the intersubband transitions used in QCLs. Consequently, the rate at which the carriers injected into the upper laser subband thermally relax to the lower subband is determined by interband Auger, radiative, and Shockley-Read carrier recombination. These processes typically occur on a much slower time scale than the longitudinal optical phonon interactions that mediates the intersubband relaxation of injected electrons in mid-IR QCLs. The use of interband transitions allows laser action in ICLs to be achieved at lower electrical input powers than is possible with QCLs.
An Edge Emitting LED (ELED) fulfills the requirement of high brightness LED, which provides high-efficiency coupling to optical fibers.
Light-emitting diodes (LEDs) produce light by the recombination of electrons and electron holes in a semiconductor, a process called "electroluminescence". The wavelength of the light produced depends on the energy band gap of the semiconductors used. Since these materials have a high index of refraction, design features of the devices such as special optical coatings and die shape are required to efficiently emit light. A LED is a long-lived light source, but certain mechanisms can cause slow loss of efficiency of the device or sudden failure. The wavelength of the light emitted is a function of the band gap of the semiconductor material used; materials such as gallium arsenide, and others, with various trace doping elements, are used to produce different colors of light. Another type of LED uses a quantum dot which can have its properties and wavelength adjusted by its size. Light-emitting diodes are widely used in indicator and display functions, and white LEDs are displacing other technologies for general illumination purposes.
References
- ↑ Archived February 13, 2006, at the Wayback Machine
- 1 2 3 4 5 6 7 Roland Diehl (2000). High-power diode lasers: fundamentals, technology, applications. Springer. p. 195. ISBN 3-540-66693-1.
- ↑ Dan Botez, Don R. Scifres (1994). Diode laser arrays. Cambridge University Press. p. 314. ISBN 0-521-41975-1.
- ↑ Kamiyama, Satoshi; Mori, Yoshihiro; Takahashi, Yasuhito; Ohnaka, Kiyoshi (1991). "Improvement of catastrophic optical damage level of AlGaInP visible laser diodes". Applied Physics Letters. 58 (23): 2595. Bibcode:1991ApPhL..58.2595K. doi:10.1063/1.104833.