Infrared spectroscopy is the measurement of the interaction of infrared radiation with matter by absorption, emission, or reflection. It is used to study and identify chemical substances or functional groups in solid, liquid, or gaseous forms. It can be used to characterize new materials or identify and verify known and unknown samples. The method or technique of infrared spectroscopy is conducted with an instrument called an infrared spectrometer which produces an infrared spectrum. An IR spectrum can be visualized in a graph of infrared light absorbance on the vertical axis vs. frequency, wavenumber or wavelength on the horizontal axis. Typical units of wavenumber used in IR spectra are reciprocal centimeters, with the symbol cm−1. Units of IR wavelength are commonly given in micrometers, symbol μm, which are related to the wavenumber in a reciprocal way. A common laboratory instrument that uses this technique is a Fourier transform infrared (FTIR) spectrometer. Two-dimensional IR is also possible as discussed below.
An electro-optic modulator (EOM) is an optical device in which a signal-controlled element exhibiting an electro-optic effect is used to modulate a beam of light. The modulation may be imposed on the phase, frequency, amplitude, or polarization of the beam. Modulation bandwidths extending into the gigahertz range are possible with the use of laser-controlled modulators.
Ultraviolet (UV) spectroscopy or ultraviolet–visible (UV–VIS) spectrophotometry refers to absorption spectroscopy or reflectance spectroscopy in part of the ultraviolet and the full, adjacent visible regions of the electromagnetic spectrum. Being relatively inexpensive and easily implemented, this methodology is widely used in diverse applied and fundamental applications. The only requirement is that the sample absorb in the UV-Vis region, i.e. be a chromophore. Absorption spectroscopy is complementary to fluorescence spectroscopy. Parameters of interest, besides the wavelength of measurement, are absorbance (A) or transmittance (%T) or reflectance (%R), and its change with time.
In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there is no generated current due to no net charge carrier mobility. However, if some electrons transfer from the valence band to the conduction band, then current can flow. Therefore, the band gap is a major factor determining the electrical conductivity of a solid. Substances having large band gaps are generally insulators, those with small band gaps are semiconductor, and conductors either have very small band gaps or none, because the valence and conduction bands overlap to form a continuous band.
Photonics is a branch of optics that involves the application of generation, detection, and manipulation of light in the form of photons through emission, transmission, modulation, signal processing, switching, amplification, and sensing. Photonics is closely related to quantum electronics, where quantum electronics deals with the theoretical part of it while photonics deal with its engineering applications. Though covering all light's technical applications over the whole spectrum, most photonic applications are in the range of visible and near-infrared light. The term photonics developed as an outgrowth of the first practical semiconductor light emitters invented in the early 1960s and optical fibers developed in the 1970s.
In physics, a plasmon is a quantum of plasma oscillation. Just as light consists of photons, the plasma oscillation consists of plasmons. The plasmon can be considered as a quasiparticle since it arises from the quantization of plasma oscillations, just like phonons are quantizations of mechanical vibrations. Thus, plasmons are collective oscillations of the free electron gas density. For example, at optical frequencies, plasmons can couple with a photon to create another quasiparticle called a plasmon polariton.
Time of flight (ToF) is the measurement of the time taken by an object, particle or wave to travel a distance through a medium. This information can then be used to measure velocity or path length, or as a way to learn about the particle or medium's properties. The traveling object may be detected directly or indirectly. Time of flight technology has found valuable applications in the monitoring and characterization of material and biomaterials, hydrogels included.
In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pushed or pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility.
Organic semiconductors are solids whose building blocks are pi-bonded molecules or polymers made up by carbon and hydrogen atoms and – at times – heteroatoms such as nitrogen, sulfur and oxygen. They exist in the form of molecular crystals or amorphous thin films. In general, they are electrical insulators, but become semiconducting when charges are either injected from appropriate electrodes, upon doping or by photoexcitation.
An organic field-effect transistor (OFET) is a field-effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum evaporation of small molecules, by solution-casting of polymers or small molecules, or by mechanical transfer of a peeled single-crystalline organic layer onto a substrate. These devices have been developed to realize low-cost, large-area electronic products and biodegradable electronics. OFETs have been fabricated with various device geometries. The most commonly used device geometry is bottom gate with top drain and source electrodes, because this geometry is similar to the thin-film silicon transistor (TFT) using thermally grown SiO2 as gate dielectric. Organic polymers, such as poly(methyl-methacrylate) (PMMA), can also be used as dielectric. One of the benefits of OFETs, especially compared with inorganic TFTs, is their unprecedented physical flexibility, which leads to biocompatible applications, for instance in the future health care industry of personalized biomedicines and bioelectronics.
In atomic physics, two-photon absorption (TPA or 2PA), also called two-photon excitation or non-linear absorption, is the simultaneous absorption of two photons of identical or different frequencies in order to excite an atom or a molecule from one state (usually the ground state), via a virtual energy level, to a higher energy, most commonly an excited electronic state. Absorption of two photons with different frequencies is called non-degenerate two-photon absorption. Since TPA depends on the simultaneous absorption of two photons, the probability of TPA is proportional to the photon dose (D), which is proportional to the square of the light intensity (D ∝ I2); thus it is a nonlinear optical process. The energy difference between the involved lower and upper states of the molecule is equal or smaller than the sum of the photon energies of the two photons absorbed. Two-photon absorption is a third-order process, with absorption cross section typically several orders of magnitude smaller than one-photon absorption cross section.
Electrical contact resistance is resistance to the flow of electric current caused by incomplete contact of the surfaces through which the current is flowing, and by films or oxide layers on the contacting surfaces. It occurs at electrical connections such as switches, connectors, breakers, contacts, and measurement probes. Contact resistance values are typically small.
An optical modulator is an optical device which is used to modulate a beam of light with a perturbation device. It is a kind of transmitter to convert information to optical binary signal through optical fiber or transmission medium of optical frequency in fiber optic communication. There are several methods to manipulate this device depending on the parameter of a light beam like amplitude modulator (majority), phase modulator, polarization modulator etc. The easiest way to obtain modulation is modulation of intensity of a light by the current driving the light source. This sort of modulation is called direct modulation, as opposed to the external modulation performed by a light modulator. For this reason, light modulators are called external light modulators. According to manipulation of the properties of material modulators are divided into two groups, absorptive modulators and refractive modulators. Absorption coefficient can be manipulated by Franz-Keldysh effect, Quantum-Confined Stark Effect, excitonic absorption, or changes of free carrier concentration. Usually, if several such effects appear together, the modulator is called electro-absorptive modulator. Refractive modulators most often make use of electro-optic effect, other modulators are made with acousto-optic effect, magneto-optic effect such as Faraday and Cotton-Mouton effects. The other case of modulators is spatial light modulator (SLM) which is modified two dimensional distribution of amplitude & phase of an optical wave.
Semiconductor characterization techniques are used to characterize a semiconductor material or device. Some examples of semiconductor properties that could be characterized include the depletion width, carrier concentration, carrier generation and recombination rates, carrier lifetimes, defect concentration, and trap states.
Organic photorefractive materials are materials that exhibit a temporary change in refractive index when exposed to light. The changing refractive index causes light to change speed throughout the material and produce light and dark regions in the crystal. The buildup can be controlled to produce holographic images for use in biomedical scans and optical computing. The ease with which the chemical composition can be changed in organic materials makes the photorefractive effect more controllable.
Henning Sirringhaus is Hitachi Professor of Electron Device Physics, Head of the Microelectronics Group and a member of the Optoelectronics Group at the Cavendish Laboratory. He is also a Fellow of Churchill College at the University of Cambridge.
Photo-reflectance is an optical technique for investigating the material and electronic properties of thin films. Photo-reflectance measures the change in reflectivity of a sample in response to the application of an amplitude modulated light beam. In general, a photo-reflectometer consists of an intensity modulated "pump" light beam used to modulate the reflectivity of the sample, a second "probe" light beam used to measure the reflectance of the sample, an optical system for directing the pump and probe beams to the sample, and for directing the reflected probe light onto a photodetector, and a signal processor to record the differential reflectance. The pump light is typically modulated at a known frequency so that a lock-in amplifier may be used to suppress unwanted noise, resulting in the ability to detect reflectance changes at the ppm level.
Nano-FTIR is a scanning probe technique that utilizes as a combination of two techniques: Fourier transform infrared spectroscopy (FTIR) and scattering-type scanning near-field optical microscopy (s-SNOM). As s-SNOM, nano-FTIR is based on atomic-force microscopy (AFM), where a sharp tip is illuminated by an external light source and the tip-scattered light is detected as a function of tip position. A typical nano-FTIR setup thus consists of an atomic force microscope, a broadband infrared light source used for tip illumination, and a Michelson interferometer acting as Fourier-transform spectrometer. In nano-FTIR, the sample stage is placed in one of the interferometer arms, which allows for recording both amplitude and phase of the detected light. Scanning the tip allows for performing hyperspectral imaging with nanoscale spatial resolution determined by the tip apex size. The use of broadband infrared sources enables the acquisition of continuous spectra, which is a distinctive feature of nano-FTIR compared to s-SNOM. Nano-FTIR is capable of performing infrared (IR) spectroscopy of materials in ultrasmall quantities and with nanoscale spatial resolution. The detection of a single molecular complex and the sensitivity to a single monolayer has been shown. Recording infrared spectra as a function of position can be used for nanoscale mapping of the sample chemical composition, performing a local ultrafast IR spectroscopy and analyzing the nanoscale intermolecular coupling, among others. A spatial resolution of 10 nm to 20 nm is routinely achieved.
Time resolved microwave conductivity (TRMC) is an experimental technique used to evaluate the electronic properties of semiconductors. Specifically, it is used to evaluate a proxy for charge carrier mobility and a representative carrier lifetime from light-induced changes in conductance. The technique works by photo-generating electrons and holes in a semiconductor, allowing these charge carriers to move under a microwave field, and detecting the resulting changes in the electric field. TRMC systems cannot be purchased as a single unit, and are generally "home-built" from individual components. One advantage of TRMC over alternative techniques is that it does not require direct physical contact to the material.
Electroreflectance is the change of reflectivity of a solid due to the influence of an electric field close to, or at the interface of the solid with a liquid. The change in reflectivity is most noticeable at very specific ranges of photon energy, corresponding to the band gaps at critical points of the Brillouin zone.
