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Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.
The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz. It is commonly used in modern ultrafast circuits, mostly radio frequency (RF) systems, and in applications requiring a high power efficiency, such as RF power amplifiers in cellular phones. The idea of employing a heterojunction is as old as the conventional BJT, dating back to a patent from 1951. Detailed theory of heterojunction bipolar transistor was developed by Herbert Kroemer in 1957.
An epitaxial wafer is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. The epi layer may be the same material as the substrate, typically monocrystaline silicon, or it may be a silicon dioxide (SoI) or a more exotic material with specific desirable qualities. The purpose of epitaxy is to perfect the crystal structure over the bare substrate below and improve the wafer surface's electrical characteristics, making it suitable for highly complex microprocessors and memory devices.
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
Indium gallium arsenide (InGaAs) is a ternary alloy of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.
Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide. It has a chemical formula of CuIn1−xGaxSe2, where the value of x can vary from 0 (pure copper indium selenide) to 1 (pure copper gallium selenide). CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with x from about 1.0 eV (for copper indium selenide) to about 1.7 eV (for copper gallium selenide).
Indium gallium nitride is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy. InxGa1−xN has a direct bandgap span from the infrared for InN to the ultraviolet of GaN. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7.
Aluminium gallium indium phosphide is a semiconductor material that provides a platform for the development of novel multi-junction photovoltaics and optoelectronic devices, as it spans a direct bandgap from deep ultraviolet to infrared.
Gallium arsenide phosphide is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition ratios indicated in its formula by the fraction x.
Spacecraft operating in the inner Solar System usually rely on the use of power electronics-managed photovoltaic solar panels to derive electricity from sunlight. Outside the orbit of Jupiter, solar radiation is too weak to produce sufficient power within current solar technology and spacecraft mass limitations, so radioisotope thermoelectric generators (RTGs) are instead used as a power source.
Multi-junction (MJ) solar cells are solar cells with multiple p–n junctions made of different semiconductor materials. Each material's p-n junction will produce electric current in response to different wavelengths of light. The use of multiple semiconducting materials allows the absorbance of a broader range of wavelengths, improving the cell's sunlight to electrical energy conversion efficiency.
Gallium indium arsenide antimonide phosphide is a semiconductor material.
A copper indium gallium selenide solar cell is a thin-film solar cell used to convert sunlight into electric power. It is manufactured by depositing a thin layer of copper indium gallium selenide solid solution on glass or plastic backing, along with electrodes on the front and back to collect current. Because the material has a high absorption coefficient and strongly absorbs sunlight, a much thinner film is required than of other semiconductor materials.
Indium arsenide antimonide phosphide is a semiconductor material.
Two-photon photovoltaic effect is an energy collection method based on two-photon absorption (TPA). The TPP effect can be thought of as the nonlinear equivalent of the traditional photovoltaic effect involving high optical intensities. This effect occurs when two photons are absorbed at the same time resulting in an electron-hole pair.
The Fraunhofer Institute for Solar Energy Systems ISE is an institute of the Fraunhofer-Gesellschaft. Located in Freiburg, Germany, The Institute performs applied scientific and engineering research and development for all areas of solar energy. Fraunhofer ISE has three external branches in Germany which carry out work on solar cell and semiconductor material development: the Laboratory and Service Center (LSC) in Gelsenkirchen, the Technology Center of Semiconductor Materials (THM) in Freiberg, and the Fraunhofer Center for Silicon Photovoltaics (CSP) in Halle. From 2006 to 2016 Eicke Weber was the director of Fraunhofer ISE. With over 1,100 employees, Fraunhofer ISE is the largest institute for applied solar energy research in Europe. The 2012 Operational Budget including investments was 74.3 million euro.
Alta Devices was a US-based specialty gallium arsenide (GaAs) PV manufacturer, which claimed to have achieved a solar cell conversion efficiency record of 29.1%, as certified by Germany's Fraunhofer ISE CalLab.
Aluminium indium antimonide, also known as indium aluminium antimonide or AlInSb (AlxIn1-xSb), is a ternary III-V semiconductor compound. The alloy can contain any ratio between aluminium and indium; that is, x in the formula can continuously take on any value between 0 and 1. AlInSb refers generally to any composition of the alloy.
References
- ↑ "Fraunhofer ISE achieves 35.9% efficiency for III-V triple-junction solar cell based on silicon". pv magazine group GmbH & Co. KG. April 23, 2021.
{{cite journal}}: Cite journal requires|journal=(help) - ↑ "Tandem Photovoltaics Enables New Heights in Solar Cell Efficiencies – 35.9 % for III-V//Silicon Solar Cell". Fraunhofer Institute for Solar Energy Systems ISE. April 23, 2021.
