Jerry G. Fossum | |
---|---|
Born | Phoenix, Arizona, U.S. | July 18, 1943
Academic background | |
Education | University of Arizona (BS, MS, PhD) |
Academic work | |
Discipline | Electrical engineering |
Sub-discipline | Semiconductor device theory Semiconductor device modeling Integrated circuit design |
Institutions | Sandia National Laboratories University of Florida |
Jerry G. Fossum (born July 18,1943) is an American electrical engineer who is a Distinguished Professor Emeritus at the University of Florida College of Engineering.
Fossum is a native of Phoenix,Arizona. He earned a Bachelor of Science,Master of Science,and PhD in electrical engineering from the University of Arizona.
Fossum worked for Sandia National Laboratories before joining the University of Florida faculty in 1978. In 1983,he was elected a fellow of the IEEE. [1] Fossum received the J. J. Ebers Award in 2004. [2] His scholarship focuses on the semiconductor device theory,modeling,and design. [3]
A fin field-effect transistor (FinFET) is a multigate device,a MOSFET built on a substrate where the gate is placed on two,three,or four sides of the channel or wrapped around the channel,forming a double or even multi gate structure. These devices have been given the generic name "FinFETs" because the source/drain region forms fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than planar CMOS technology.
The J. J. Ebers Award was established in 1971 to foster progress in electron devices. It commemorates Jewell James Ebers,whose contributions,particularly to transistors,shaped the understanding and technology of electron devices. It is presented annually to one or more individuals who have made either a single or a series of contributions of recognized scientific,economic,or social significance in the broad field of electron devices. The recipient is awarded a certificate and check for $5,000,presented at the International Electron Devices Meeting.
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