Johnson's figure of merit

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Johnson's figure of merit is a measure of suitability of a semiconductor material for high frequency power transistor applications and requirements. More specifically, it is the product of the charge carrier saturation velocity in the material and the electric breakdown field under same conditions, first proposed by Edward O. Johnson of RCA in 1965. [1]

Contents

Note that this figure of merit (FoM) is applicable to both field-effect transistors (FETs), and with proper interpretation of the parameters, also to bipolar junction transistors (BJTs).

Example materials

[2]

MaterialSaturation velocity
× 105 m/s		Vbreakdown
MV/cm		JFM
Si: 1.0		Notes/refs
Silicon 1.00.31.0 [2]
GaAs 1.50.42.7 [2]
SiC 2.03.520 [2]
InP 0.670.50.33 [2]
GaN 2.53.327.5 [2]

JFM figures vary wildly between sources – see external links and talk page.

SiGaAsGaNSiCdiamond
JFM1117904105800

References

  1. ↑ "Physical limitations on frequency and power parameters of transistors", RCA Review, vol. 26, pp. 163–177, June 1965.
  2. 1 2 3 4 5 6 Gallium Nitride as an Electromechanical Material. R-Z. IEEE 2014 Table IV (p 5)
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