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The bit is the most basic unit of information in computing and digital communications. The bit also means binary storage in computing or a binary symbol (data) in digital communications into which a bit, as a unit, of information may be stored or encoded.
Computer data storage is a technology consisting of computer components and recording media that are used to retain digital data. It is a core function and fundamental component of computers.
In computing, memory is a device or system that is used to store information for immediate use in a computer or related computer hardware and digital electronic devices. The term memory is often synonymous with the term primary storage or main memory. An archaic synonym for memory is store.
The Williams tube, or the Williams–Kilburn tube named after inventors Freddie Williams and Tom Kilburn, is an early form of computer memory. It was the first random-access digital storage device, and was used successfully in several early computers.
Dynamic random-access memory is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory, since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.
Delay-line memory is a form of computer memory, now obsolete, that was used on some of the earliest digital computers. Like many modern forms of electronic computer memory, delay-line memory was a refreshable memory, but as opposed to modern random-access memory, delay-line memory was sequential-access.
The Selectron was an early form of digital computer memory developed by Jan A. Rajchman and his group at the Radio Corporation of America (RCA) under the direction of Vladimir K. Zworykin. It was a vacuum tube that stored digital data as electrostatic charges using technology similar to the Williams tube storage device. The team was never able to produce a commercially viable form of Selectron before magnetic-core memory became almost universal.
The Manchester Baby, also called the Small-Scale Experimental Machine (SSEM), was the first electronic stored-program computer. It was built at the University of Manchester by Frederic C. Williams, Tom Kilburn, and Geoff Tootill, and ran its first program on 21 June 1948.
Tom Kilburn was an English mathematician and computer scientist. Over the course of a productive 30-year career, he was involved in the development of five computers of great historical significance. With Freddie Williams he worked on the Williams–Kilburn tube and the world's first electronic stored-program computer, the Manchester Baby, while working at the University of Manchester. His work propelled Manchester and Britain into the forefront of the emerging field of computer science.
Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data.
Reading is an action performed by computers, to acquire data from a source and place it into their volatile memory for processing. Computers may read information from a variety of sources, such as magnetic storage, the Internet, or audio and video input ports. Reading is one of the core functions of a Turing machine.
Storage tubes are a class of cathode-ray tubes (CRTs) that are designed to hold an image for a long period of time, typically as long as power is supplied to the tube.
Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory uses floating-gate memory cells, which consist of a single floating-gate transistor per cell.
Ferroelectric RAM is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. An FeRAM chip contains a thin film of ferroelectric material, often lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT layer change polarity in an electric field, thereby producing a power-efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption or magnetic interference, making FeRAM a reliable nonvolatile memory.
Memory refresh is the process of periodically reading information from an area of computer memory and immediately rewriting the read information to the same area without modification, for the purpose of preserving the information. Memory refresh is a background maintenance process required during the operation of semiconductor dynamic random-access memory (DRAM), the most widely used type of computer memory, and in fact is the defining characteristic of this class of memory.
Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing software that is rarely changed during the life of the system, also known as firmware. Software applications for programmable devices can be distributed as plug-in cartridges containing ROM.
Random-access memory is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media, where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
The Manchester Mark 1 was one of the earliest stored-program computers, developed at the Victoria University of Manchester, England from the Manchester Baby. Work began in August 1948, and the first version was operational by April 1949; a program written to search for Mersenne primes ran error-free for nine hours on the night of 16/17 June 1949.
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 and reset to store a logic 0. Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.
A vacuum-tube computer, now termed a first-generation computer, is a computer that uses vacuum tubes for logic circuitry. Although superseded by second-generation transistorized computers, vacuum-tube computers continued to be built into the 1960s. These computers were mostly one-of-a-kind designs.
References
- ↑ "Selectron tube". Virtual Exhibitions in Informatics. University of Klagenfurt. Retrieved 16 January 2018.
- ↑ Rajchman, Jan (23 August 1946). "Lecture 43 - The Selectron". The 1946 Moore School Lectures. RCA Laboratories, Princeton: Moore School of Electrical Engineering. Archived from the original on 6 June 2013.
- ↑ "The Manchester Mark 1", University of Manchester, archived from the original on 21 November 2008, retrieved 2020-06-09,
The Manchester Mark 1 Intermediary Version was based on two double-density Williams-Kilburn Tubes as main store, each with the capacity of two "page"s. A page was an array of 32 * 40 bits, the capacity of a basic Williams-Kilburn Tube
- ↑ Klein, Dean A. "A History and Future of Memory Innovation". Semicon China. Micron Technology, Inc. Retrieved 16 January 2018.