Spin engineering

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Spin engineering describes the control and manipulation of quantum spin systems to develop devices and materials. This includes the use of the spin degrees of freedom as a probe for spin based phenomena. Because of the basic importance of quantum spin for physical and chemical processes, spin engineering is relevant for a wide range of scientific and technological applications. Current examples range from Bose–Einstein condensation to spin-based data storage and reading in state-of-the-art hard disk drives, as well as from powerful analytical tools like nuclear magnetic resonance spectroscopy and electron paramagnetic resonance spectroscopy to the development of magnetic molecules as qubits and magnetic nanoparticles. In addition, spin engineering exploits the functionality of spin to design materials with novel properties as well as to provide a better understanding and advanced applications of conventional material systems. Many chemical reactions are devised to create bulk materials or single molecules with well defined spin properties, such as a single-molecule magnet. The aim of this article is to provide an outline of fields of research and development where the focus is on the properties and applications of quantum spin.

Contents

Introduction

As spin is one of the fundamental quantum properties of elementary particles it is relevant for a large range of physical and chemical phenomena. For instance, the spin of the electron plays a key role in the electron configuration of atoms which is the basis of the periodic table of elements. The origin of ferromagnetism is also closely related to the magnetic moment associated with the spin and the spin-dependent Pauli exclusion principle. Thus, the engineering of ferromagnetic materials like mu-metals or Alnico at the beginning of the last century can be considered as early examples of spin engineering, although the concept of spin was not yet known at that time. Spin engineering in its generic sense became possible only after the first experimental characterization of spin in the Stern–Gerlach experiment in 1922 followed by the development of relativistic quantum mechanics by Paul Dirac. This theory was the first to accommodate the spin of the electron and its magnetic moment.

Whereas the physics of spin engineering dates back to the groundbreaking findings of quantum chemistry and physics within the first decades of the 20th century, the chemical aspects of spin engineering have received attention especially within the last twenty years. Today, researchers focus on specialized topics, such as the design and synthesis of molecular magnets or other model systems in order to understand and harness the fundamental principles behind phenomena such as the relation between magnetism and chemical reactivity as well as microstructure related mechanical properties of metals and the biochemical impact of spin (e. g. photoreceptor proteins) and spin transport.

Research fields of spin engineering

Spintronics

Spintronics is the exploitation of both the intrinsic spin of the electron and its fundamental electronic charge in solid-state devices and is thus a part of spin engineering. Spintronics is probably one of the most advanced fields of spin engineering with many important inventions which can be found in end-user devices like the reading heads for magnetic hard disk drives. This section is divided in basic spintronic phenomena and their applications.

Basic spintronic phenomena

Applications of spintronics

this section is devoted to current and possible future applications of spintronics which make use of one or the combination of several basic spintronic phenomena:

Spin materials

Materials which properties are determined or strongly influenced by quantum spin:

Spin based detection

methods to characterize materials and physical or chemical processes via spin based phenomena:

Related Research Articles

<span class="mw-page-title-main">Condensed matter physics</span> Branch of physics

Condensed matter physics is the field of physics that deals with the macroscopic and microscopic physical properties of matter, especially the solid and liquid phases, that arise from electromagnetic forces between atoms and electrons. More generally, the subject deals with condensed phases of matter: systems of many constituents with strong interactions among them. More exotic condensed phases include the superconducting phase exhibited by certain materials at extremely low cryogenic temperatures, the ferromagnetic and antiferromagnetic phases of spins on crystal lattices of atoms, the Bose–Einstein condensates found in ultracold atomic systems, and liquid crystals. Condensed matter physicists seek to understand the behavior of these phases by experiments to measure various material properties, and by applying the physical laws of quantum mechanics, electromagnetism, statistical mechanics, and other physics theories to develop mathematical models and predict the properties of extremely large groups of atoms.

Magnetoresistance is the tendency of a material to change the value of its electrical resistance in an externally-applied magnetic field. There are a variety of effects that can be called magnetoresistance. Some occur in bulk non-magnetic metals and semiconductors, such as geometrical magnetoresistance, Shubnikov–de Haas oscillations, or the common positive magnetoresistance in metals. Other effects occur in magnetic metals, such as negative magnetoresistance in ferromagnets or anisotropic magnetoresistance (AMR). Finally, in multicomponent or multilayer systems, giant magnetoresistance (GMR), tunnel magnetoresistance (TMR), colossal magnetoresistance (CMR), and extraordinary magnetoresistance (EMR) can be observed.

Spintronics, also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems; the analogous effects in insulators fall into the field of multiferroics.

<span class="mw-page-title-main">Tunnel magnetoresistance</span> Magnetic effect in insulators between ferromagnets

Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough, electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon, and lies in the study of spintronics.

Colossal magnetoresistance (CMR) is a property of some materials, mostly manganese-based perovskite oxides, that enables them to dramatically change their electrical resistance in the presence of a magnetic field. The magnetoresistance of conventional materials enables changes in resistance of up to 5%, but materials featuring CMR may demonstrate resistance changes by orders of magnitude.

<span class="mw-page-title-main">Giant magnetoresistance</span> Phenomenom involving the change of conductivity in metallic layers

Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in multilayers composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR, which also sets the foundation for the study of spintronics.

<span class="mw-page-title-main">Magnon</span> Spin 1 quasiparticle; quantum of a spin wave

A magnon is a quasiparticle, a collective excitation of the spin structure of an electron in a crystal lattice. In the equivalent wave picture of quantum mechanics, a magnon can be viewed as a quantized spin wave. Magnons carry a fixed amount of energy and lattice momentum, and are spin-1, indicating they obey boson behavior.

<span class="mw-page-title-main">RKKY interaction</span>

In the physical theory of spin glass magnetization, the Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction models the coupling of nuclear magnetic moments or localized inner d- or f-shell electron spins through conduction electrons. It is named after Malvin Ruderman, Charles Kittel, Tadao Kasuya, and Kei Yosida, the physicists who first proposed and developed the model.

<span class="mw-page-title-main">Albert Fert</span> French physicist (born 1938)

Albert Fert is a French physicist and one of the discoverers of giant magnetoresistance which brought about a breakthrough in gigabyte hard disks. Currently, he is an emeritus professor at Paris-Saclay University in Orsay, scientific director of a joint laboratory between the Centre national de la recherche scientifique and Thales Group, and adjunct professor at Michigan State University. He was awarded the 2007 Nobel Prize in Physics together with Peter Grünberg.

Multiferroics are defined as materials that exhibit more than one of the primary ferroic properties in the same phase:

Spin pumping is the dynamical generation of pure spin current by the coherent precession of magnetic moments, which can efficiently inject spin from a magnetic material into an adjacent non-magnetic material. The non-magnetic material usually hosts the spin Hall effect that can convert the injected spin current into a charge voltage easy to detect. A spin pumping experiment typically requires electromagnetic irradiation to induce magnetic resonance, which converts energy and angular momenta from electromagnetic waves to magnetic dynamics and then to electrons, enabling the electronic detection of electromagnetic waves. The device operation of spin pumping can be regarded as the spintronic analog of a battery.

Gallium manganese arsenide, chemical formula (Ga,Mn)As is a magnetic semiconductor. It is based on the world's second most commonly used semiconductor, gallium arsenide,, and readily compatible with existing semiconductor technologies. Differently from other dilute magnetic semiconductors, such as the majority of those based on II-VI semiconductors, it is not paramagnetic but ferromagnetic, and hence exhibits hysteretic magnetization behavior. This memory effect is of importance for the creation of persistent devices. In (Ga,Mn)As, the manganese atoms provide a magnetic moment, and each also acts as an acceptor, making it a p-type material. The presence of carriers allows the material to be used for spin-polarized currents. In contrast, many other ferromagnetic magnetic semiconductors are strongly insulating and so do not possess free carriers. (Ga,Mn)As is therefore a candidate material for spintronic devices but it is likely to remain only a testbed for basic research as its Curie temperature could only be raised up to approximately 200 K.

Molecule-based magnets (MBMs) or molecular magnets are a class of materials capable of displaying ferromagnetism and other more complex magnetic phenomena. This class expands the materials properties typically associated with magnets to include low density, transparency, electrical insulation, and low-temperature fabrication, as well as combine magnetic ordering with other properties such as photoresponsiveness. Essentially all of the common magnetic phenomena associated with conventional transition-metal magnets and rare-earth magnets can be found in molecule-based magnets. Prior to 2011, MBMs were seen to exhibit "magnetic ordering with Curie temperature (Tc) exceeding room temperature".

Spinmechatronics is neologism referring to an emerging field of research concerned with the exploitation of spin-dependent phenomena and established spintronic methodologies and technologies in conjunction with electro-mechanical, magno-mechanical, acousto-mechanical and opto-mechanical systems. Most especially, spinmechatronics concerns the integration of micro- and nano- mechatronic systems with spin physics and spintronics.

Magnonics is an emerging field of modern magnetism, which can be considered a sub-field of modern solid state physics. Magnonics combines the study of waves and magnetism. Its main aim is to investigate the behaviour of spin waves in nano-structure elements. In essence, spin waves are a propagating re-ordering of the magnetisation in a material and arise from the precession of magnetic moments. Magnetic moments arise from the orbital and spin moments of the electron, most often it is this spin moment that contributes to the net magnetic moment.

Spin Hall magnetoresistance (SMR) is a transport phenomenon that is found in some electrical conductors that have at least one surface in direct contact with another magnetic material due to changes in the spin current that are present in metals and semiconductors with a large spin Hall angle. It is most easily detected when the magnetic material is an insulator which eliminates other magnetically sensitive transport effects arising from conduction in the magnetic material.

<span class="mw-page-title-main">Spinterface</span>

Spinterface is a term coined to indicate an interface between a ferromagnet and an organic semiconductor. This is a widely investigated topic in molecular spintronics, since the role of interfaces plays a huge part in the functioning of a device. In particular, spinterfaces are widely studied in the scientific community because of their hybrid organic/inorganic composition. In fact, the hybridization between the metal and the organic material can be controlled by acting on the molecules, which are more responsive to electrical and optical stimuli than metals. This gives rise to the possibility of efficiently tuning the magnetic properties of the interface at the atomic scale.

Professor Lan Wang is a Chinese-Australian material scientist known for expertise in materials synthesis and advanced materials characterisation.

<span class="mw-page-title-main">Joseph P. Heremans</span> Condensed matter experimental physicist

Joseph P. Heremans is a condensed matter experimental physicist at The Ohio State University where he holds titles as Ohio Eminent Scholar and Professor in the Department of Mechanical and Aerospace Engineering, with courtesy appointments in the Department of Physics and Department of Materials Science and Engineering. He is a member of the National Academy of Engineering and fellow of the American Physical Society and the American Association for the Advancement of Science. His research focuses on magneto-transport, thermal, and thermoelectric properties of electrons, phonons, and spin in narrow-gap semiconductors, semimetals, and nanostructures. Prior to OSU, Heremans worked as a research scientist and research manager at GM Research Lab from 1984-1998 and the Delphi Research Labs (1999-2005), where he developed tunable IR diode lasers and magnetic sensors.

<span class="mw-page-title-main">Jean-Philippe Ansermet</span> Swiss physicist

Jean-Philippe Ansermet is a Swiss physicist and engineer and a professor at École Polytechnique Fédérale de Lausanne. His research focuses on the fabrication and properties of nanostructured materials as well as spintronics.

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