Boron phosphide

Boron phosphide

Identifiers
CAS Number	20205-91-8  Y
3D model (JSmol)	Interactive image Interactive image
ChemSpider	79763
ECHA InfoCard	100.039.616
EC Number	243-593-3
PubChem CID	88409
CompTox Dashboard (EPA)	DTXSID1066570
InChI InChI=1S/BP/c1-2 Key: FFBGYFUYJVKRNV-UHFFFAOYSA-N
SMILES [B+3].[P-3] B#P
Properties
Chemical formula	BP
Molar mass	41.7855 g/mol
Appearance	maroon powder
Density	2.90 g/cm3
Melting point	1,100 °C (2,010 °F; 1,370 K) (decomposes)
Band gap	2.1 eV (indirect, 300 K) [1]
Thermal conductivity	4.6 W/(cm·K) (300 K) [2]
Refractive index (nD)	3.0 (0.63 μm) [1]
Structure
Crystal structure	Zinc blende
Space group	F43m
Coordination geometry	Tetrahedral
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). Y  verify  (what is  YN ?) Infobox references

Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B₁₂P₂) is a chemical compound of boron and phosphorus. It is a semiconductor. ^[3]

History

Crystals of boron phosphide were synthesized by Henri Moissan as early as 1891. ^[4]

Appearance

Pure BP is almost transparent, n-type crystals are orange-red whereas p-type ones are dark red. ^[5]

Chemical properties

BP is not attacked by acids or boiling aqueous alkali water solutions. It is only attacked by molten alkalis. ^[5]

Physical properties

BP is known to be chemically inert and exhibit very high thermal conductivity. ^[2] Some properties of BP are listed below:

• lattice constant 0.45383 nm
• coefficient of thermal expansion 3.65×10⁻⁶ /°C (400 K)
• heat capacity C_P ~ 0.8 J/(g·K) (300 K)
• Debye temperature = 985 K
• Bulk modulus 152 GPa
• relatively high microhardness of 32 GPa (100 g load).
• electron and hole mobilities of a few hundred cm²/(V·s) (up to 500 for holes at 300 K)
• high thermal conductivity of ~ 460 W/(m·K) at room temperature ^[2]

See also

• Boron arsenide
• Boron nitride
• Aluminium phosphide
• Gallium phosphide

References

1. Madelung, O. (2004). Semiconductors: Data Handbook. Birkhäuser. pp. 84–86. ISBN   978-3-540-40488-0.
2. Kang, J.; Wu, H.; Hu, Y. (2017). "Thermal Properties and Phonon Spectral Characterization of Synthetic Boron Phosphide for High Thermal Conductivity Applications". Nano Letters. 17 (12): 7507–7514. Bibcode:2017NanoL..17.7507K. doi:10.1021/acs.nanolett.7b03437. PMID   29115845.
3. Popper, P.; Ingles, T. A. (1957). "Boron Phosphide, a III–V Compound of Zinc-Blende Structure". Nature. 179 (4569): 1075. Bibcode:1957Natur.179.1075P. doi: 10.1038/1791075a0 .
4. Moissan, H. (1891). "Préparation et Propriétés des Phosphures de Bore". Comptes Rendus. 113: 726–729. Archived from the original on 2016-05-16. Retrieved 2012-04-28.
5. Berger, L. I. (1996). Semiconductor Materials . CRC Press. p.  116. ISBN   978-0-8493-8912-2.

Further reading

• King, R. B., ed. (1999). Boron Chemistry at the Millennium. Elsevier Science & Technology. ISBN   0-444-72006-5.
• USpatent 6831304,Takashi, U.,"P-N Junction Type Boron Phosphide-Based Semiconductor Light-Emitting Device and Production Method thereof",issued 2004-12-14, assigned to Showa Denko 
• Stone, B.; Hill, D. (1960). "Semiconducting Properties of Cubic Boron Phosphide". Physical Review Letters. 4 (6): 282–284. Bibcode:1960PhRvL...4..282S. doi:10.1103/PhysRevLett.4.282.