George Perlegos

Last updated
George Perlegos
Γεώργιος Πυρλήκος
Perlegos George 250px.png
Born1950
NationalityAmerican, Greek
Alma mater San Jose State University (BS)
Stanford University (MS)
Known forInvention of the N-channel EPROM, EEPROM, founder and CEO of Atmel
Scientific career
Fields
Website https://www.georgeperlegos.com/

George Perlegos (born 1950) is a Greek-American computer scientist and engineer, best known for pioneering the use of EEPROM and founding Atmel.

Contents

Early life and education

Perlegos was born in 1950 to parents Eleni and Pete Perlegos in Arcadia, Greece. Perlegos and his two brothers came to the United States in 1962 and he began working as a grape farmer. He finished high school in Lodi, California, and graduated from San Jose State University in 1972 with a Bachelor of Science in Electrical Engineering. [1] He later completed a Master of Science in Electrical Engineering at Stanford University in 1975, and from 1975–1978 attended courses there in pursuit of a PhD.

Career

In 1972, his first job after San Jose State was at American Micro Systems Inc (AMI), [1] then a leading supplier of application specific integrated circuits (ASICs). His first assignment there was to design a single-chip calculator using MOS (Metal Oxide Semiconductor) integrated circuits technology. He simultaneously enrolled in Stanford University to learn more about MOS processing and circuit design. [2] He stayed with AMI through 1974.

Intel

While attending Stanford, Perlegos interviewed at Intel Corporation. At this time Intel had a new project to develop nonvolatile memory technologies and a new semiconductor chip. After learning about the opportunities to work on these new technologies during the interview, he left AMI for Intel in 1974. While at Intel, he became an expert in semiconductor device physics, circuit design, and semiconductor fabrication processes. His first task, to design and develop an N-channel EPROM [3] [4] different from its predecessor the P-channel EPROM, that would work with the microprocessors Intel was developing at the time. [5] The project known as the 2708, was introduced by Intel in 1975. [6] His invention of the N-channel EPROM was important, as it was the first time a positive voltage and channel injection was used for a nonvolatile memory device, thus requiring significantly lower voltage than its P-channel predecessor. [2] [3] The 2708 was a revolutionary chip, particularly for use with microprocessors. [5] In 1978, Perlegos designed and developed the Intel 2816, an Electrically Erasable PROM (EEPROM) [3] that eliminated the lengthy UV exposure cycle using tunneling to both program and erase the memory. [5]

SEEQ Technology

Leaving Intel with other Intel employees in 1981, he founded SEEQ Technology. He developed an improved version of EEPROM. [7] that could be programmed and erased on the system board for the first time. [3] [8] The improved version of EEPROM "A 5V-only 16K EEPROM utilizing oxynitride dielectrics" could be programmed and erased on the system board for the first time. It used an on-chip charge pump to generate required programming voltages. [9] It was this ability to program and erase at system levels that allowed EEPROM/FLASH devices to be incorporated in all computers, laptops, cellphones etc [6] [8]

ATMEL

In 1984, Perlegos founded Atmel corporation [10] and was CEO of Atmel from 1984 to 2006. The firm created many embedded EEPROM and flash memory devices, was a pioneer in NVM, as well as the world’s first microcontroller with on-chip flash. [11] [12] [13]

Honors and awards

Select publications and patents

Publications

Patents

Related Research Articles

<span class="mw-page-title-main">Computer memory</span> Computer component that stores information for immediate use

Computer memory stores information, such as data and programs, for immediate use in the computer. The term memory is often synonymous with the terms RAM,main memory, or primary storage. Archaic synonyms for main memory include core and store.

<span class="mw-page-title-main">Microcontroller</span> Small computer on a single integrated circuit

A microcontroller or microcontroller unit (MCU) is a small computer on a single integrated circuit. A microcontroller contains one or more CPUs along with memory and programmable input/output peripherals. Program memory in the form of NOR flash, OTP ROM, or ferroelectric RAM is also often included on the chip, as well as a small amount of RAM. Microcontrollers are designed for embedded applications, in contrast to the microprocessors used in personal computers or other general-purpose applications consisting of various discrete chips.

A programmable read-only memory (PROM) is a form of digital memory where the contents can be changed once after manufacture of the device. The data is then permanent and cannot be changed. It is one type of read-only memory (ROM). PROMs are used in digital electronic devices to store permanent data, usually low level programs such as firmware or microcode. The key difference from a standard ROM is that the data is written into a ROM during manufacture, while with a PROM the data is programmed into them after manufacture. Thus, ROMs tend to be used only for large production runs with well-verified data. PROMs may be used where the volume required does not make a factory-programmed ROM economical, or during development of a system that may ultimately be converted to ROMs in a mass produced version.

<span class="mw-page-title-main">Flash memory</span> Electronic non-volatile computer storage device

Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.

<span class="mw-page-title-main">EEPROM</span> Computer memory used for small quantities of data

EEPROM or E2PROM (electrically erasable programmable read-only memory) is a type of non-volatile memory. It is used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or as a separate chip device, to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed.

<span class="mw-page-title-main">Programmable logic device</span> Reconfigurable digital circuit element

A programmable logic device (PLD) is an electronic component used to build reconfigurable digital circuits. Unlike digital logic constructed using discrete logic gates with fixed functions, the function of a PLD is undefined at the time of manufacture. Before the PLD can be used in a circuit it must be programmed to implement the desired function. Compared to fixed logic devices, programmable logic devices simplify the design of complex logic and may offer superior performance. Unlike for microprocessors, programming a PLD changes the connections made between the gates in the device.

<span class="mw-page-title-main">EPROM</span> Early type of solid state computer memory

An EPROM, or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet (UV) light source. EPROMs are easily recognizable by the transparent fused quartz window on the top of the package, through which the silicon chip is visible, and which permits exposure to ultraviolet light during erasing.

<span class="mw-page-title-main">AVR microcontrollers</span> Family of microcontrollers

AVR is a family of microcontrollers developed since 1996 by Atmel, acquired by Microchip Technology in 2016. These are modified Harvard architecture 8-bit RISC single-chip microcontrollers. AVR was one of the first microcontroller families to use on-chip flash memory for program storage, as opposed to one-time programmable ROM, EPROM, or EEPROM used by other microcontrollers at the time.

Atmel Corporation was a creator and manufacturer of semiconductors before being subsumed by Microchip Technology in 2016. Atmel was founded in 1984. The company focused on embedded systems built around microcontrollers. Its products included microcontrollers radio-frequency (RF) devices including Wi-Fi, EEPROM, and flash memory devices, symmetric and asymmetric security chips, touch sensors and controllers, and application-specific products. Atmel supplies its devices as standard products, application-specific integrated circuits (ASICs), or application-specific standard product (ASSPs) depending on the requirements of its customers.

<span class="mw-page-title-main">Programmable Array Logic</span> Field-programmable semiconductor devices

Programmable Array Logic (PAL) is a family of programmable logic device semiconductors used to implement logic functions in digital circuits that was introduced by Monolithic Memories, Inc. (MMI) in March 1978. MMI obtained a registered trademark on the term PAL for use in "Programmable Semiconductor Logic Circuits". The trademark is currently held by Lattice Semiconductor.

Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data.

Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory uses floating-gate memory cells, which consist of a single floating-gate transistor per cell.

The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, typically longer than 10 years in modern devices. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG.

SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon", is a cross sectional structure of MOSFET (metal–oxide–semiconductor field-effect transistor), realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. This structure is often used for non-volatile memories, such as EEPROM and flash memories. It is sometimes used for TFT LCD displays. It is one of CTF (charge trap flash) variants. It is distinguished from traditional non-volatile memory structures by the use of silicon nitride (Si3N4 or Si9N10) instead of "polysilicon-based FG (floating-gate)" for the charge storage material. A further variant is "SHINOS" ("silicon"—"hi-k"—"nitride"—"oxide"—"silicon"), which is substituted top oxide layer with high-κ material. Another advanced variant is "MONOS" ("metal–oxide–nitride–oxide–silicon"). Companies offering SONOS-based products include Cypress Semiconductor, Macronix, Toshiba, United Microelectronics Corporation and Floadia.

<span class="mw-page-title-main">Fujio Masuoka</span> Japanese engineer (born 1943)

Fujio Masuoka is a Japanese engineer, who has worked for Toshiba and Tohoku University, and is currently chief technical officer (CTO) of Unisantis Electronics. He is best known as the inventor of flash memory, including the development of both the NOR flash and NAND flash types in the 1980s. He also invented the first gate-all-around (GAA) MOSFET (GAAFET) transistor, an early non-planar 3D transistor, in 1988.

<span class="mw-page-title-main">Read-only memory</span> Electronic memory that cannot be changed

Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing software that is rarely changed during the life of the system, also known as firmware. Software applications, such as video games, for programmable devices can be distributed as plug-in cartridges containing ROM.

<span class="mw-page-title-main">Single-board microcontroller</span> Microcontroller built onto a single printed circuit board

A single-board microcontroller is a microcontroller built onto a single printed circuit board. This board provides all of the circuitry necessary for a useful control task: a microprocessor, I/O circuits, a clock generator, RAM, stored program memory and any necessary support ICs. The intention is that the board is immediately useful to an application developer, without requiring them to spend time and effort to develop controller hardware.

Dawon Kahng was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET, along with his colleague Mohamed Atalla, in 1959. Kahng and Atalla developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment.

The following outline is provided as an overview of and topical guide to electronics:

<span class="mw-page-title-main">Memory cell (computing)</span> Part of computer memory

The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 and reset to store a logic 0. Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.

References

  1. 1 2 "George Perlegos – Charles W. Davidson College of Engineering at SJSU". engineering.sjsu.edu. Retrieved 2020-06-05.
  2. 1 2 "Perlegos, George oral history | 102746703 | Computer History Museum". www.computerhistory.org. Computer History Museum. 8 July 2013. Retrieved 2020-06-05.
  3. 1 2 3 4 "George Perlegos Inventions, Patents and Patent Applications – Justia Patents Search". patents.justia.com. Retrieved 2020-06-15.
  4. 1 2 "US Patent for Erasable programmable read-only memory Patent (Patent # 3,938,108 issued February 10, 1976) – Justia Patents Search". patents.justia.com. Retrieved 2020-06-15.
  5. 1 2 3 Rostky, George. "Remembering the PROM knights of Intel". EE|TIMES.
  6. 1 2 3 "Flash Memory Lifetime Achievement Award 2017 – George Perlegos". flashmemorysummit.com. Retrieved 2020-06-05.
  7. "US Patent for Electrically-programmable and electrically-erasable MOS memory device Patent (Patent # 4,558,344 issued December 10, 1985) – Justia Patents Search". patents.justia.com. Retrieved 2020-06-15.
  8. 1 2 "EEPROM (Electrically Erasable Programmable Read-Only Memory)". 6 April 2019. Retrieved 2020-06-05.
  9. Gupta, A.; Te-Long Chiu; Chang, M.; Renninger, A.; Perlegos, G. (1982). "A 5V-only 16K EEPROM utilizing oxynitride dielectrics and EPROM redundancy". 1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. Vol. XXV. pp. 184–185. doi:10.1109/ISSCC.1982.1156369. S2CID   26572964.
  10. Ristelheuber, Robert (1998-08-01). "EDN – The Quiet Man". EDN. Retrieved 2020-06-05.
  11. "Atmel 1999 Flash-Based Microcontroller Strategy" (PDF).
  12. "Atmel 2004 Flash-Based Microcontroller Chip Product Sheet" (PDF).
  13. "Atmel History". Silicon Valley Historical Association. Retrieved 2020-06-05.
  14. "Electronics Industry's Movers & Shakers of 2003" (PDF).
  15. "30 Who Made a Difference" (PDF). Electronic Engineering Times.
  16. "US Patent for Electrically-programmable and electrically-erasable MOS memory device Patent (Patent # 4,558,344 issued December 10, 1985) – Justia Patents Search". patents.justia.com. Retrieved 2020-06-15.
  17. "US Patent for Method of making EPROM cell with reduced programming voltage Patent (Patent # 4,519,849 issued May 28, 1985) – Justia Patents Search". patents.justia.com. Retrieved 2020-06-15.