A crystallographic defect is an interruption of the regular patterns of arrangement of atoms or molecules in crystalline solids. The positions and orientations of particles, which are repeating at fixed distances determined by the unit cell parameters in crystals, exhibit a periodic crystal structure, but this is usually imperfect. Several types of defects are often characterized: point defects, line defects, planar defects, bulk defects. Topological homotopy establishes a mathematical method of characterization.
Germanium is a chemical element; it has symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid in the carbon group that is chemically similar to its group neighbors silicon and tin. Like silicon, germanium naturally reacts and forms complexes with oxygen in nature.
Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target if they stop and remain in the target. Ion implantation also causes chemical and physical changes when the ions impinge on the target at high energy. The crystal structure of the target can be damaged or even destroyed by the energetic collision cascades, and ions of sufficiently high energy can cause nuclear transmutation.
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single-domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlattice structures.
SiGe, or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture. SiGe is also used as a thermoelectric material for high-temperature applications (>700 K).
Imperfections in the crystal lattice of diamond are common. Such defects may be the result of lattice irregularities or extrinsic substitutional or interstitial impurities, introduced during or after the diamond growth. The defects affect the material properties of diamond and determine to which type a diamond is assigned; the most dramatic effects are on the diamond color and electrical conductivity, as explained by the electronic band structure.
Heusler compounds are magnetic intermetallics with face-centered cubic crystal structure and a composition of XYZ (half-Heuslers) or X2YZ (full-Heuslers), where X and Y are transition metals and Z is in the p-block. The term derives from the name of German mining engineer and chemist Friedrich Heusler, who studied such a compound (Cu2MnAl) in 1903. Many of these compounds exhibit properties relevant to spintronics, such as magnetoresistance, variations of the Hall effect, ferro-, antiferro-, and ferrimagnetism, half- and semimetallicity, semiconductivity with spin filter ability, superconductivity, topological band structure and are actively studied as thermoelectric materials. Their magnetism results from a double-exchange mechanism between neighboring magnetic ions. Manganese, which sits at the body centers of the cubic structure, was the magnetic ion in the first Heusler compound discovered. (See the Bethe–Slater curve for details of why this happens.)
GeSbTe (germanium-antimony-tellurium or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change memory applications. Its recrystallization time is 20 nanoseconds, allowing bitrates of up to 35 Mbit/s to be written and direct overwrite capability up to 106 cycles. It is suitable for land-groove recording formats. It is often used in rewritable DVDs. New phase-change memories are possible using n-doped GeSbTe semiconductor. The melting point of the alloy is about 600 °C (900 K) and the crystallization temperature is between 100 and 150 °C.
Tungsten disulfide is an inorganic chemical compound composed of tungsten and sulfur with the chemical formula WS2. This compound is part of the group of materials called the transition metal dichalcogenides. It occurs naturally as the rare mineral tungstenite. This material is a component of certain catalysts used for hydrodesulfurization and hydrodenitrification.
The nitrogen-vacancy center is one of numerous photoluminescent point defects in diamond. Its most explored and useful properties include its spin-dependent photoluminescence, and its relatively long (millisecond) spin coherence at room temperature. The NV center energy levels are modified by magnetic fields, electric fields, temperature, and strain, which allow it to serve as a sensor of a variety of physical phenomena. Its atomic size and spin properties can form the basis for useful quantum sensors. It has also been explored for applications in quantum computing, quantum simulation, and spintronics.
Covalent superconductors are superconducting materials where the atoms are linked by covalent bonds. The first such material was boron-doped synthetic diamond grown by the high-pressure high-temperature (HPHT) method. The discovery had no practical importance, but surprised most scientists as superconductivity had not been observed in covalent semiconductors, including diamond and silicon.
Nanodiamonds, or diamond nanoparticles, are diamonds with a size below 100 nanometers. They can be produced by impact events such as an explosion or meteoritic impacts. Because of their inexpensive, large-scale synthesis, potential for surface functionalization, and high biocompatibility, nanodiamonds are widely investigated as a potential material in biological and electronic applications and quantum engineering.
A Tauc plot is used to determine the optical bandgap, or Tauc bandgap, of either disordered or amorphous semiconductors.
A single-photon source is a light source that emits light as single particles or photons. Single-photon sources are distinct from coherent light sources (lasers) and thermal light sources such as incandescent light bulbs. The Heisenberg uncertainty principle dictates that a state with an exact number of photons of a single frequency cannot be created. However, Fock states can be studied for a system where the electric field amplitude is distributed over a narrow bandwidth. In this context, a single-photon source gives rise to an effectively one-photon number state.
NASICON is an acronym for sodium (Na) super ionic conductor, which usually refers to a family of solids with the chemical formula Na1+xZr2SixP3−xO12, 0 < x < 3. In a broader sense, it is also used for similar compounds where Na, Zr and/or Si are replaced by isovalent elements. NASICON compounds have high ionic conductivities, on the order of 10−3 S/cm, which rival those of liquid electrolytes. They are caused by hopping of Na ions among interstitial sites of the NASICON crystal lattice.
Germanene is a material made up of a single layer of germanium atoms. The material is created in a process similar to that of silicene and graphene, in which high vacuum and high temperature are used to deposit a layer of germanium atoms on a substrate. High-quality thin films of germanene have revealed unusual two-dimensional structures with novel electronic properties suitable for semiconductor device applications and materials science research.
The silicon-vacancy center (Si-V) is an optically active defect in diamond that is receiving an increasing amount of interest in the diamond research community. This interest is driven primarily by the coherent optical properties of the Si-V, especially compared to the well-known and extensively-studied nitrogen-vacancy center (N-V).
In physics, optically detected magnetic resonance (ODMR) is a double resonance technique by which the electron spin state of a crystal defect may be optically pumped for spin initialisation and readout.
Iron germanide (FeGe) is an intermetallic compound, a germanide of iron. At ambient conditions it crystallizes in three polymorphs with monoclinic, hexagonal and cubic structures. The cubic polymorph has no inversion center, it is therefore helical, with right-hand and left-handed chiralities.
Silicon carbide color centers are point defects in the crystal lattice of silicon carbide, which are known as color centers. These color centers have multiple uses, some of which are in photonics, semiconductors, and quantum applications like metrology and quantum communication. Defects in materials have a plethora of applications, but the reason defects, or color centers in silicon carbide are significant is due to many important properties of these color centers. Silicon carbide as a material has second-order nonlinearity, as well as optical transparency and low two-photon absorption. This makes silicon carbide viable to be an alternate platform for many things, including but not limited to nanofabrication, integrated quantum photonics, and quantum systems in large-scale wafers.
