Spintronics, also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems; the analogous effects in insulators fall into the field of multiferroics.
A perovskite is any material with a crystal structure following the formula ABX3, which was first discovered as the mineral called perovskite, which consists of calcium titanium oxide (CaTiO3). The mineral was first discovered in the Ural mountains of Russia by Gustav Rose in 1839 and named after Russian mineralogist L. A. Perovski (1792–1856). 'A' and 'B' are two positively charged ions (i.e. cations), often of very different sizes, and X is a negatively charged ion (an anion, frequently oxide) that bonds to both cations. The 'A' atoms are generally larger than the 'B' atoms. The ideal cubic structure has the B cation in 6-fold coordination, surrounded by an octahedron of anions, and the A cation in 12-fold cuboctahedral coordination. Additional perovskite forms may exist where either/both the A and B sites have a configuration of A1x-1A2x and/or B1y-1B2y and the X may deviate from the ideal coordination configuration as ions within the A and B sites undergo changes in their oxidation states.
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlattice structures.
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs at microwave frequencies, and to manufacture the lasers used to read optical discs.
Gallium nitride is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.
Pulsed laser deposition (PLD) is a physical vapor deposition (PVD) technique where a high-power pulsed laser beam is focused inside a vacuum chamber to strike a target of the material that is to be deposited. This material is vaporized from the target which deposits it as a thin film on a substrate. This process can occur in ultra high vacuum or in the presence of a background gas, such as oxygen which is commonly used when depositing oxides to fully oxygenate the deposited films.
Indium nitride is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.
Indium gallium arsenide (InGaAs) is a ternary alloy of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.
Indium gallium nitride is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy. InxGa1−xN has a direct bandgap span from the infrared for InN to the ultraviolet of GaN. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7.
Gallium(III) oxide is an inorganic compound and ultra-wide bandgap semiconductor with the formula Ga2O3. It is actively studied for applications in power electronics, phosphors, and gas sensing. The compound has several polymorphs, of which the monoclinic β-phase is the most stable. The β-phase’s bandgap of 4.7–4.9 eV and large-area, native substrates make it a promising competitor to GaN and SiC-based power electronics applications and solar-blind UV photodetectors. Ga2O3 exhibits reduced thermal conductivity and electron mobility by an order of magnitude compared to GaN and SiC, but is predicted to be significantly more cost-effective due to being the only wide-bandgap material capable of being grown from melt. β-Ga2O3 is thought to be radiation hard which makes it promising for military and space applications.
Tantalum(IV) sulfide is an inorganic compound with the formula TaS2. It is a layered compound with three-coordinate sulfide centres and trigonal prismatic or octahedral metal centres. It is structurally similar to molybdenum disulfide MoS2, and numerous other transition metal dichalcogenide materials. The 1T-TaS2 polytype exhibits some unusual properties. In common with many other transition metal dichalcogenide (TMD) compounds, which are metallic at high temperatures, it exhibits a series of charge-density-wave (CDW) phase transitions from 550 K to 50 K. It is unusual amongst them in showing a low-temperature insulating state below 200 K, which is believed to arise from electron correlations, similar to many oxides. The insulating state is commonly attributed to a Mott state. It is also superconducting under pressure or upon doping, with a familiar dome-like phase diagram as a function of dopant, or substituted isovalent element concentration.
A quantum well laser is a laser diode in which the active region of the device is so narrow that quantum confinement occurs. Laser diodes are formed in compound semiconductor materials that are able to emit light efficiently. The wavelength of the light emitted by a quantum well laser is determined by the width of the active region rather than just the bandgap of the materials from which it is constructed. This means that much shorter wavelengths can be obtained from quantum well lasers than from conventional laser diodes using a particular semiconductor material. The efficiency of a quantum well laser is also greater than a conventional laser diode due to the stepwise form of its density of states function.
Superconducting wires are electrical wires made of superconductive material. When cooled below their transition temperatures, they have zero electrical resistance. Most commonly, conventional superconductors such as niobium–titanium are used, but high-temperature superconductors such as YBCO are entering the market.
Morton B. Panish is an American physical chemist who, with Izuo Hayashi, developed a room-temperature continuous wave semiconductor laser in 1970. For this achievement he shared the Kyoto Prize in Advanced Technology in 2001.
Niobium diselenide or niobium(IV) selenide is a layered transition metal dichalcogenide with formula NbSe2. Niobium diselenide is a lubricant, and a superconductor at temperatures below 7.2 K that exhibit a charge density wave (CDW). NbSe2 crystallizes in several related forms, and can be mechanically exfoliated into monatomic layers, similar to other transition metal dichalcogenide monolayers. Monolayer NbSe2 exhibits very different properties from the bulk material, such as of Ising superconductivity, quantum metallic state, and strong enhancement of the CDW.
Jagdish Narayan is an Indian-born American engineer. Since 2001, he has been the John C. C. Fan Family Distinguished Chair Professor in the Materials Science and Engineering Department at North Carolina State University. He is also the distinguished visiting scientist at Oak Ridge National Laboratory. Narayan has published above 500 high-impact journal articles, with his discoveries covered in over 40 US and international patents. His body of work can be segregated into highly non-equilibrium laser processing of novel nanomaterials, including Q-carbon, Q-BN, diamond and c-BN related materials. These research articles have received over 31,000 Google citations with h-index >85. Narayan and his students discovered Q-carbon asa new allotrope, thereby finding a new route to fabricate diamond and related materials in ambient conditions, resulting in properties and applications ranging from high-temperature superconductivity in boron-doped Q-carbon to hardness than diamond in Q-carbon to enhanced field-emission in Q-carbon to nitrogen-doped nanodiamonds for quantum computing, nanosensing and solid-state devices.
Selenogallates are chemical compounds which contain anionic units of selenium connected to gallium. They can be considered as gallates where selenium substitutes for oxygen. Similar compounds include the thiogallates and selenostannates. They are in the category of chalcogenotrielates or more broadly chalcogenometallates.
Thulium phosphide is an inorganic compound of thulium and phosphorus with the chemical formula TmP.
Tellurogallates are chemical compounds which contain anionic units of tellurium connected to gallium. They can be considered as gallates where tellurium substitutes for oxygen. Similar compounds include the thiogallates, selenogallates, telluroaluminates, telluroindates and thiostannates. They are in the category of chalcogenotrielates or more broadly tellurometallates or chalcogenometallates.
